gummel
Abstract: oscilators BFP650
Text: BFP650 NPN Silicon Germanium RF Transistor 3 Preliminary data 4 • For high power amplifiers • Ideal for low phase noise oscilators • Maxim. available Gain Gma = 21 dB at 1.8 GHz 2 Noise figure F = 0.9 dB at 1.8 GHz • Gold metallization for high reliability
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BFP650
VPS05605
OT343
Oct-13-2003
gummel
oscilators
BFP650
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80mAF
Abstract: 6069 marking
Text: BFP650 NPN Silicon Germanium RF Transistor 3 Preliminary data 4 • For high power amplifiers • Ideal for low phase noise oscilators • Maxim. available Gain Gma = 21 dB at 1.8 GHz 2 Noise figure F = 0.8 dB at 1.8 GHz • Gold metallization for high reliability
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BFP650
VPS05605
OT343
Aug-16-2004
80mAF
6069 marking
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transistor 1T
Abstract: BFP650 equivalent
Text: BFP650 NPN Silicon Germanium RF Transistor 3 Preliminary data 4 For high power amplifiers Ideal for low phase noise oscilators Maxim. available Gain Gma = 21 dB at 1.8 GHz 2 Noise figure F = 0.9 dB at 1.8 GHz Gold metallization for high reliability
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BFP650
VPS05605
OT343
Jul-01-2003
transistor 1T
BFP650 equivalent
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BFP650 noise figure
Abstract: data sheet germanium diode germanium transistors NPN npn germanium BFP650
Text: BFP650 NPN Silicon Germanium RF Transistor 3 Preliminary data 4 For high power amplifiers Ideal for low phase noise oscilators Maxim. available Gain Gma = 21 dB at 1.8 GHz 2 Noise figure F = 0.9 dB at 1.8 GHz Gold metallization for high reliability
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BFP650
VPS05605
OT343
curr26
Mar-27-2003
BFP650 noise figure
data sheet germanium diode
germanium transistors NPN
npn germanium
BFP650
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BFP650
Abstract: No abstract text available
Text: BFP650 NPN Silicon Germanium RF Transistor 3 Preliminary data 4 • For high power amplifiers • Ideal for low phase noise oscilators • Maxim. available Gain Gma = 21 dB at 1.8 GHz 2 Noise figure F = 0.9 dB at 1.8 GHz • Gold metallization for high reliability
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BFP650
VPS05605
OT343
Jan-08-2004
BFP650
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PH marking code
Abstract: No abstract text available
Text: BFP650 NPN Silicon Germanium RF Transistor 3 Preliminary data 4 • For high power amplifiers • Ideal for low phase noise oscilators • Maxim. available Gain Gma = 21 dB at 1.8 GHz 2 Noise figure F = 0.8 dB at 1.8 GHz • Gold metallization for high reliability
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BFP650
VPS05605
OT343
PH marking code
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Untitled
Abstract: No abstract text available
Text: BFP650 NPN Silicon Germanium RF Transistor 3 Preliminary data 4 • For high power amplifiers • Ideal for low phase noise oscilators • Maxim. available Gain Gma = 21 dB at 1.8 GHz 2 Noise figure F = 0.8 dB at 1.8 GHz • Gold metallization for high reliability
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BFP650
VPS05605
OT343
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marking r5s
Abstract: No abstract text available
Text: BFP650 NPN Silicon Germanium RF Transistor 3 Preliminary data 4 For high power amplifiers Ideal for low phase noise oscilators Maxim. available Gain Gma = 21 dB at 1.8 GHz 2 Noise figure F = 0.9 dB at 1.8 GHz Gold metallization for high reliability
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BFP650
VPS05605
OT343
Oct-22-2002
marking r5s
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BFP650
Abstract: BGA420 T-25
Text: BFP650 NPN Silicon Germanium RF Transistor* • For high power amplifiers 3 • Ideal for low phase noise oscilators 2 4 • Maxim. available Gain Gma = 21 dB at 1.8 GHz 1 Noise figure F = 0.8 dB at 1.8 GHz • Gold metallization for high reliability • 70 GHz fT- Silicon Germanium technology
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BFP650
OT343
BFP650
BGA420
T-25
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RBS 3000
Abstract: BFP650 BFP650 noise figure BGA420 T-25 RBS INFINEON
Text: BFP650 NPN Silicon Germanium RF Transistor* • For high power amplifiers 3 • Ideal for low phase noise oscilators 2 4 • Maxim. available Gain Gma = 21 dB at 1.8 GHz 1 Noise figure F = 0.8 dB at 1.8 GHz • Gold metallization for high reliability • 70 GHz fT - Silicon Germanium technology
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BFP650
OT343
RBS 3000
BFP650
BFP650 noise figure
BGA420
T-25
RBS INFINEON
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BFP650
Abstract: No abstract text available
Text: BFP650 High Linearity Low Noise SiGe:C NPN RF Transistor Data Sheet Revision 1.0, 2010-10-22 RF & Protection Devices Edition 2010-10-22 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer
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BFP650
OT343
OT343-PO
OT343-FP
BFP650:
OT323-TP
BFP650
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RBS 3000
Abstract: 1g28
Text: BFP650 NPN Silicon Germanium RF Transistor* • For high power amplifiers 3 • Ideal for low phase noise oscilators 2 4 • Maxim. available Gain Gma = 21 dB at 1.8 GHz 1 Noise figure F = 0.8 dB at 1.8 GHz • Gold metallization for high reliability • 70 GHz fT - Silicon Germanium technology
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BFP650
OT343
RBS 3000
1g28
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BFP650
Abstract: BFP650 noise figure AN077 infineon AN077 sdars C166 NF50 BFP650 2.4GHz lna
Text: BFP650 High Linearity Low Noise SiGe:C NPN RF Transistor Data Sheet Revision 1.0, 2010-10-22 RF & Protection Devices Edition 2010-10-22 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer
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BFP650
OT343
OT343-PO
OT343-FP
BFP650:
OT323-TP
BFP650
BFP650 noise figure
AN077
infineon AN077
sdars
C166
NF50
BFP650 2.4GHz lna
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Untitled
Abstract: No abstract text available
Text: BFP650 High Linearity Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.1, 2012-09-13 RF & Protection Devices Edition 2012-09-13 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer
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BFP650
OT343
OT343-PO
OT343-FP
BFP650:
OT323-TP
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class h power amplifier schematic
Abstract: class d amplifier schematic diagram SMC-02 BFP650 Miteq network analyzer measure antenna CLASS D amplifier diagram class g power amplifier schematic sdars
Text: A pp li c at i on N ot e , R ev . 1. 2 , S e pt e m be r 2 00 7 A p p li c a t i o n N o t e N o . 1 2 3 L o w C o s t 2. 3 3 G H z C l a s s A S D A R S A c t i v e A n te n n a A m p l i f i e r O ut p u t S ta g e u s i n g t h e I n f i ne o n B FP 6 50 S i G e T ra n s i s t o r
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BFP620F
Abstract: BFP640 schematic diagram CORDLESS DRILL BFP620 applications note TRANSISTOR40GHZ AN082 amplifier TRANSISTOR 12 GHZ BFP650 BFP690 5703 infineon
Text: A pp l ic a t io n N o t e, R e v . 2. 0 , J a n. 2 00 7 A p p li c a t i o n N o t e N o . 0 8 2 A L o w - C o s t, T w o - S t a g e L o w N o i s e A m p l i fi e r f o r 5 - 6 GHz Applications Using the SiliconGermanium BFP640 Transistor R F & P r o t e c ti o n D e v i c e s
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BFP640
BFP620F
schematic diagram CORDLESS DRILL
BFP620 applications note
TRANSISTOR40GHZ
AN082
amplifier TRANSISTOR 12 GHZ
BFP650
BFP690
5703 infineon
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cdma Booster schematic
Abstract: uwb transceiver BGH182M ESDOP8RFL bridge 45 b 50 20 c1v TRANSISTOR SMD CODE PACKAGE SOT89 52 10A DVB-T Schematic set top box BF776 DVB-t receiver schematic diagram microstrip Antenna 5.8ghz
Text: May 2007 Product & Application Guide 2007 Small Signal Discretes www.infineon.com/smallsignaldiscretes Table of Contents Applications Mobile Communication ……………. Consumer …………………………………. Automotive & Industrial.………….
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B132-H9014-X-X-7600
NB07-1094
cdma Booster schematic
uwb transceiver
BGH182M
ESDOP8RFL
bridge 45 b 50 20 c1v
TRANSISTOR SMD CODE PACKAGE SOT89 52 10A
DVB-T Schematic set top box
BF776
DVB-t receiver schematic diagram
microstrip Antenna 5.8ghz
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Cordless Phone circuit diagram
Abstract: 2.4GHz Cordless Phone circuit diagram BFP750 cordless phone circuit S parameters of 5.8 GHz transistor SCHEMATIC DIAGRAM OF WIFI RF POWER TRANSISTOR RF MODULE CIRCUIT DIAGRAM dect Cordless Phone system block diagram murata wifi saw filter cordless phone ic
Text: BF P750 BF P750 a s a Dri ve r A mpl i fi er for 5.8 G Hz Cor dl es s P hon e A ppl i c a t i ons Appl i c ati o n N ote A N 246 Revision: Rev 1.1 2010-09-24 RF and P r otec ti on D evi c es Edition 2010-09-24 Published by Infineon Technologies AG 81726 Munich, Germany
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limitation111
5000MHz
BFP750
AN246,
BFP750
AN246
Cordless Phone circuit diagram
2.4GHz Cordless Phone circuit diagram
cordless phone circuit
S parameters of 5.8 GHz transistor
SCHEMATIC DIAGRAM OF WIFI RF POWER TRANSISTOR
RF MODULE CIRCUIT DIAGRAM dect
Cordless Phone system block diagram
murata wifi saw filter
cordless phone ic
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IPTV schematic diagram
Abstract: AN245 BFP450 BFP750 saw EPCOS p750 cordless phone Transceiver IC WiMAX RF Transceiver BFP650 BFR380F C166
Text: BF P750 Dri ver f or Wi Ma x 3 3 00 to 37 0 0M Hz applica tio n Applic atio n N ote A N 245 Revision: Rev. 1.0 2010-10-05 RF and P r otecti on D evic es Edition 2010-10-05 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG
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3700MHz
AN245,
BFP750
AN245
IPTV schematic diagram
AN245
BFP450
BFP750
saw EPCOS p750
cordless phone Transceiver IC
WiMAX RF Transceiver
BFP650
BFR380F
C166
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BGT24MTR11
Abstract: AZ1045-04F BAR86-02LRH 24GHz Radar BGA628L7 SMV1705 BFR181W ALPHA&OMEGA DATE CODE marking code onsemi Diode 2SC4586
Text: Selection Guide RF & Protection Devices www.infineon.com/rfandprotectiondevices 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 9 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters
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24GHz
BF517
BF770A
BF771
BF799
BF799W
BFP181
BFP182
BFP182R
BFP182W
BGT24MTR11
AZ1045-04F
BAR86-02LRH
24GHz Radar
BGA628L7
SMV1705
BFR181W
ALPHA&OMEGA DATE CODE
marking code onsemi Diode
2SC4586
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TRANSISTOR 434
Abstract: BFP650 HOME AUTOMATION USING GSM AN196 BFR380F bf 434 BFP450 ag 20 taiyo BFR380 RF MODULE 434Mhz
Text: BF R38 0F Dri v er A m pl i fer fo r 434 M Hz I S MBan d A ppl i c ati ons Appl i c ati o n N ote A N 196 Revision: Rev1.1 2010-09-28 RF and P r otec ti on D evi c es Edition 2010-09-28 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG
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AN196,
BFR380F
AN196
TRANSISTOR 434
BFP650
HOME AUTOMATION USING GSM
AN196
BFR380F
bf 434
BFP450
ag 20 taiyo
BFR380
RF MODULE 434Mhz
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Untitled
Abstract: No abstract text available
Text: RF & Protection Devices Board Name BFP 540ESD Evalboard Products Description Order No. BFP 540ESD A low-cost, low-current broadband UHF low noise amplifier with the ESD-robust BFP 540ESD RF transistor. BFP540ESD board This board shows the ESD-robust BFR 460L3 board in ISM and
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540ESD
540ESD
BFP540ESD
460L3
BFR460L3
434MHz
BFP460
360L3
340L3
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XM0830SJ
Abstract: smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563
Text: Selection Guide RF & Protection Devices [ www.infineon.com/rfandprotectiondevices ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters
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24GHz
BF517
BF770A
BF771
BF775
BF799
BF799W
BFP181
BFP181R
BFP182
XM0830SJ
smd code marking 162 sot23-5
MARKING V14 SOT23-5
RF Transistor Selection
smd code marking rf ft sot23
smd code marking NEC rf transistor
sot-363 inf
smd marking D3 SOT363
XM0860SH
MGA51563
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Wired /12 pin 7 segment display layout -hs-5461BS2
Abstract: mbed LPC1768 OL2300 TEA1522T
Text: Smart Metering Solutions Rolf Hertel – Global Applications Marketing Neal Frager – Smart Metering Applications Engineer October 2010 Smart Metering Selling Guide 2 What is Smart Metering? 3 Stakeholders in Smart Metering Governments rule regulations to reduce CO2 emissions and
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JN5148
JN5148
IEEE802
Wired /12 pin 7 segment display layout -hs-5461BS2
mbed LPC1768
OL2300
TEA1522T
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