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    BFP640 Price and Stock

    Infineon Technologies AG BFP640H6327XTSA1

    RF TRANS NPN 4.5V 40GHZ SOT343-4
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BFP640H6327XTSA1 Reel 27,000 3,000
    • 1 -
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    • 10000 $0.17662
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    BFP640H6327XTSA1 Cut Tape 1,049 1
    • 1 $0.53
    • 10 $0.457
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    Avnet Americas BFP640H6327XTSA1 Ammo Pack 14 Weeks, 5 Days 1
    • 1 $0.551
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    Mouser Electronics BFP640H6327XTSA1 52,347
    • 1 $0.53
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    Verical BFP640H6327XTSA1 39,000 3,000
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    BFP640H6327XTSA1 1,812 197
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    Arrow Electronics BFP640H6327XTSA1 39,000 6 Weeks 3,000
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    Quest Components BFP640H6327XTSA1 1,400
    • 1 $0.36
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    BFP640H6327XTSA1 1,400
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    • 1000 $0.168
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    BFP640H6327XTSA1 6,269
    • 1 $0.6
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    BFP640H6327XTSA1 6,269
    • 1 $0.6
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    Rochester Electronics BFP640H6327XTSA1 14,848 1
    • 1 $0.1759
    • 10 $0.1759
    • 100 $0.1653
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    TME BFP640H6327XTSA1 2,930 1
    • 1 $0.472
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    Chip1Stop BFP640H6327XTSA1 Cut Tape 1,812
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    New Advantage Corporation BFP640H6327XTSA1 60,000 1
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    Rochester Electronics LLC BFP640E6327

    RF BIPOLAR TRANSISTOR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BFP640E6327 Bulk 26,583 866
    • 1 -
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    Infineon Technologies AG BFP640ESDH6327XTSA1

    RF TRANS NPN 4.7V 46GHZ SOT343
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BFP640ESDH6327XTSA1 Reel 24,000 3,000
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    • 10000 $0.18363
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    BFP640ESDH6327XTSA1 Cut Tape 2,555 1
    • 1 $0.46
    • 10 $0.391
    • 100 $0.292
    • 1000 $0.18362
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    BFP640ESDH6327XTSA1 Digi-Reel 1
    • 1 $0.46
    • 10 $0.391
    • 100 $0.292
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    Mouser Electronics BFP640ESDH6327XTSA1 5,126
    • 1 $0.44
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    Verical BFP640ESDH6327XTSA1 2,136 32
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    BFP640ESDH6327XTSA1 2,130 165
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    BFP640ESDH6327XTSA1 1,660 34
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    Arrow Electronics BFP640ESDH6327XTSA1 Cut Strips 2,136 6 Weeks 1
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    BFP640ESDH6327XTSA1 1,660 1
    • 1 $0.278
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    Chip1Stop BFP640ESDH6327XTSA1 Cut Tape 2,130
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    Infineon Technologies AG BFP640FH6327XTSA1

    RF TRANS NPN 4.5V 40GHZ 4TSFP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BFP640FH6327XTSA1 Cut Tape 2,846 1
    • 1 $0.52
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    BFP640FH6327XTSA1 Reel 3,000
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    BFP640FH6327XTSA1 Digi-Reel 1
    • 1 $0.52
    • 10 $0.443
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    Avnet Americas BFP640FH6327XTSA1 Reel 10 Weeks 3,000
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    Mouser Electronics BFP640FH6327XTSA1 4,375
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    • 10 $0.414
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    Verical BFP640FH6327XTSA1 5,283,000 3,000
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    BFP640FH6327XTSA1 6,000 3,000
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    BFP640FH6327XTSA1 2,346 263
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    Arrow Electronics BFP640FH6327XTSA1 6,000 10 Weeks 3,000
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    • 10000 $0.1558
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    Rochester Electronics BFP640FH6327XTSA1 248,970 1
    • 1 $0.1706
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    Chip1Stop BFP640FH6327XTSA1 Cut Tape 2,346
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    Infineon Technologies AG BFP640FESDH6327XTSA1

    RF TRANS NPN 4.7V 46GHZ 4TSFP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BFP640FESDH6327XTSA1 Cut Tape 1,982 1
    • 1 $0.63
    • 10 $0.54
    • 100 $0.4033
    • 1000 $0.24484
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    Verical BFP640FESDH6327XTSA1 96,000 3,000
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    Rochester Electronics BFP640FESDH6327XTSA1 117,538 1
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    Find more BFP640 price and stock on Findchips.com

    BFP640 Datasheets (26)

    Part ECAD Model Manufacturer Description Curated Type PDF
    BFP640 Infineon Technologies Oscillator, Dielectric Resonator Oscillator at 11.92GHz utilizing BFP640 Original PDF
    BFP640 Infineon Technologies NPN Silicon Germanium RF Transistor Original PDF
    BFP640 Infineon Technologies NPN Silicon Germanium RF Transistor Original PDF
    BFP640 Infineon Technologies Si, SiGe RF Transistors, fT = 24 to 70 GHz; Package: PG-SOT343-4; VCEO (max): 4.0 V; IC(max): 50.0 mA; Ptot (max): 200.0 mW; fT (typ): 40.0 GHz; F (typ): 0.65 dB; Original PDF
    BFP640E6327 Infineon Technologies Controlled Oscillator, Dielectric Resonator Oscillator at 11.92GHz utilizing BFP640, Tape And Reel Original PDF
    BFP640E6327 Infineon Technologies RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR NPN SIGE RF SOT-343 Original PDF
    BFP640E6327BTSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - TRANSISTOR NPN SIGE RF SOT-343 Original PDF
    BFP640E6359 Infineon Technologies IC DIELECTRIC RESONATOR OSCILLATOR AT 4 Original PDF
    BFP640E7764 Infineon Technologies IC DIELECTRIC RESONATOR OSCILLATOR AT 4 Original PDF
    BFP640ESDH6327 Infineon Technologies RF Transistors (BJT), Discrete Semiconductor Products, TRANS RF NPN 46GHZ 4.7V SOT343 Original PDF
    BFP640ESDH6327XTSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - TRANS RF NPN 46GHZ 4.7V SOT343 Original PDF
    BFP640F Infineon Technologies SiGe RF-Bipolar NPN Transistors in standard SOT343 and flatlead TSFP-4 Original PDF
    BFP640F Infineon Technologies NPN Silicon Germanium RF Transistor Original PDF
    BFP640F Infineon Technologies Si, SiGe RF Transistors, fT = 24 to 70 GHz; Package: PG-TSFP-4; VCEO (max): 4.0 V; IC(max): 50.0 mA; Ptot (max): 200.0 mW; fT (typ): 40.0 GHz; F (typ): 0.65 dB; Original PDF
    BFP 640F Infineon Technologies SiGe RF-Bipolar NPN Transistors in standard SOT343 and flatlead TSFP-4 Original PDF
    BFP640FE6327 Infineon Technologies TRANS GP BJT NPN 4V 0.05 Original PDF
    BFP640FESDE6327 Infineon Technologies RF Transistors (BJT), Discrete Semiconductor Products, TRANS RF NPN 46GHZ 4.7V TSFP-4-1 Original PDF
    BFP640FESDH6327 Infineon Technologies RF Transistors (BJT), Discrete Semiconductor Products, TRANS RF NPN 4.5V 50MA 4TSFP Original PDF
    BFP640FESDH6327XTSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - TRANS RF NPN 4.5V 50MA 4TSFP Original PDF
    BFP640FH6327 Infineon Technologies RF Transistors (BJT), Discrete Semiconductor Products, TRANS RF NPN 4.5V 50MA 4TSFP Original PDF

    BFP640 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    XPOSYS

    Abstract: gummel poon model parameter HBT X-GOLD colossus diodes transistor marking k2 dual Trimble Germanium Transistor agilent ads SENSONOR 2.4ghz lnb
    Text: BFP640ESD Robust High Performance Low Noise Bipolar RF Transistor Data Sheet Revision 1.0, 2010-06-29 RF & Protection Devices Edition 2010-06-29 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved.


    Original     		PDF BFP640ESD OT343 OT343-PO OT343-FP BFP640ESD: OT323-TP 726-BFP640ESDE6327 640ESD E6327 XPOSYS gummel poon model parameter HBT X-GOLD colossus diodes transistor marking k2 dual Trimble Germanium Transistor agilent ads SENSONOR 2.4ghz lnb

    R4S BFP640

    Abstract: BFP640 VPS05605 4ghz s parameters transistor s parameters 4ghz
    Text: BFP640 NPN Silicon Germanium RF Transistor 3 4 • High gain low noise RF transistor • Provides outstanding performance for a wide range of wireless applications 2 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz


    Original     		PDF BFP640 VPS05605 OT343 Apr-21-2004 R4S BFP640 BFP640 VPS05605 4ghz s parameters transistor s parameters 4ghz

    4GHZ TRANSISTOR

    Abstract: R4S BFP640 bfp640 BFP640 noise figure BGA420 T-25 TRANSISTOR NPN 5GHz marking r4s 4ghz s parameters transistor
    Text: BFP640 NPN Silicon Germanium RF Transistor • High gain low noise RF transistor 3 • Provides outstanding performance 2 4 for a wide range of wireless applications 1 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz


    Original     		PDF BFP640 OT343 4GHZ TRANSISTOR R4S BFP640 bfp640 BFP640 noise figure BGA420 T-25 TRANSISTOR NPN 5GHz marking r4s 4ghz s parameters transistor

    bfp640f

    Abstract: SPICE 2G6 transistor BF 298
    Text: BFP640F XYs NPN Silicon Germanium RF Transistor* • High gain low noise RF transistor 3 • Provides outstanding performance 2 4 for a wide range of wireless applications 1 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz


    Original     		PDF BFP640F bfp640f SPICE 2G6 transistor BF 298

    Dielectric Resonator Oscillator at 11.92GHz utilizing BFP640

    Abstract: Dielectric Resonator Oscillator at 11.92GHz BFP640 dielectric resonator VPS05605 BFP640 noise figure fet dro 10 ghz fet dro RF TRANSISTOR 10 GHZ low noise diagram radar circuit
    Text: 11.92 GHz DRO Silicon Discretes Dielectric Resonator Oscillator at 11.92GHz utilizing BFP640 Description 3 Infineon’s BFP640 is a high-performance, low-cost Silicon-Germanium bipolar transistor housed in a 4-lead SOT-343 surface mount package. With a transition


    Original     		PDF 92GHz BFP640 BFP640 OT-343 OT343 Dielectric Resonator Oscillator at 11.92GHz utilizing BFP640 Dielectric Resonator Oscillator at 11.92GHz dielectric resonator VPS05605 BFP640 noise figure fet dro 10 ghz fet dro RF TRANSISTOR 10 GHZ low noise diagram radar circuit

    1575-24

    Abstract: BPF640 bfp640f Texas Instruments 4100 GPS BFP640FESD gsm mobile jammer mobile jammer mobile signal jammer AN194 BPF640FESD
    Text: BFP640FESD LNA BFP640FESD for GPS 1575MHz A pplication A pplication Note AN194 Revision: Rev. 1.0 2010-03-09 RF and Protection Devices Edition 2010-03-09 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved.


    Original     		PDF BFP640FESD BFP640FESD 1575MHz AN194 proper2010-03-09 1575MHz 1575-24 BPF640 bfp640f Texas Instruments 4100 GPS gsm mobile jammer mobile jammer mobile signal jammer AN194 BPF640FESD

    Untitled

    Abstract: No abstract text available
    Text: BFP640F NPN Silicon Germanium RF Transistor* • High gain low noise RF transistor 3 • Provides outstanding performance 2 4 1 for a wide range of wireless applications • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz


    Original     		PDF BFP640F BFP640may

    Untitled

    Abstract: No abstract text available
    Text: BFP640FESD Robust Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.2, 2012-09-19 RF & Protection Devices Edition 2012-09-19 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved.


    Original     		PDF BFP640FESD BFP640FESD:

    BFP620 applications note

    Abstract: 28428 bfp640 BFP640 noise figure transistor l2 ansoft 3RD Rail Engineering RF LNA 10 GHz
    Text: LWR # 00522 LNA P Silicon Discretes - BFP640 Preliminary Eval / 2.4 GHz LNA September 7, 2001 The SiGe BFP640 as a 2.4 GHz Low Noise Amplifier. • Overview: The new BFP640 SiGe Transistor is shown in a 2400 – 2483.5 MHz Low Noise Amplifier Application. The


    Original     		PDF BFP640 BFP620, BFP620. OT-343 BFP620 applications note 28428 BFP640 noise figure transistor l2 ansoft 3RD Rail Engineering RF LNA 10 GHz

    bfp640f

    Abstract: BFP420F
    Text: BFP640F NPN Silicon Germanium RF Transistor* • High gain low noise RF transistor 3 • Provides outstanding performance 2 4 1 for a wide range of wireless applications • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz


    Original     		PDF BFP640F bfp640f BFP420F

    BFP640E6327

    Abstract: BFP640 noise figure bfp640e R4S BFP640
    Text: BFP640 NPN Silicon Germanium RF Transistor • High gain low noise RF transistor 3 • Provides outstanding performance 2 4 for a wide range of wireless applications 1 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz


    Original     		PDF BFP640 OT343 726-BFP640E6327 E6327 BFP640E6327 BFP640 noise figure bfp640e R4S BFP640

    BFP640FESD

    Abstract: MIPI spec C166 JESD22-A114 NF50 X-GOLD RF Bipolar Transistor XPOSYS Germanium Transistor
    Text: BFP640FESD Robust SiGe:C Wideband RF Bipolar Transistor Data Sheet Revision 1.0, 2010-04-08 RF & Protection Devices Edition 2010-04-08 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer


    Original     		PDF BFP640FESD BFP640FESD: BFP640FESD MIPI spec C166 JESD22-A114 NF50 X-GOLD RF Bipolar Transistor XPOSYS Germanium Transistor

    bfp640esd

    Abstract: BFP740FESD WiMAX RF Transceiver AN218 BFP540FESD BFP640FESD C166 LQW15A rf transistor 2.5GHz S11-S22
    Text: BFP640ESD Ultra Low Noise Amplifier for 2.5 - 2.7 GHz WLAN & WiMAX A pplications A pplication Note AN218 Revision: Rev. 1.0 2010-06-30 RF and Protection Devices Edition 2010-06-30 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG


    Original     		PDF BFP640ESD AN218 20dBm AN218, bfp640esd BFP740FESD WiMAX RF Transceiver AN218 BFP540FESD BFP640FESD C166 LQW15A rf transistor 2.5GHz S11-S22

    BFP740

    Abstract: sdars lna BFP640 BFP740FESD MIPI omnivision BFP740 application note sdars xm sirius x-goldtm sdars C166TM
    Text: BFP740FESD/BFP640FESD 2 Stage LNA for 2.330GHz SDARS Combined 2 Stage LNA for SDARS using Infineon's BFP740FESD and BFP640FESD Series A pplication Note AN222 Revision: 1.0 2010-07-02 RF and Protection Devices Edition 2010-07-02 Published by Infineon Technologies AG


    Original     		PDF BFP740FESD/BFP640FESD 330GHz BFP740FESD BFP640FESD AN222 AN222, BFP740/BFP640 BFP740 sdars lna BFP640 MIPI omnivision BFP740 application note sdars xm sirius x-goldtm sdars C166TM

    bfp640f

    Abstract: bfp640 R4S BFP640F BFP420F Infineon Technologies transistor 4 ghz
    Text: BFP640F NPN Silicon Germanium RF Transistor* • High gain low noise RF transistor 3 • Provides outstanding performance 2 4 1 for a wide range of wireless applications • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz


    Original     		PDF BFP640F bfp640f bfp640 R4S BFP640F BFP420F Infineon Technologies transistor 4 ghz

    R4S BFP640

    Abstract: BFP640 transistor ph 45 v marking r4s
    Text: BFP640 NPN Silicon Germanium RF Transistor 3 4 • High gain low noise RF transistor • Provides outstanding performance for a wide range of wireless applications 2 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz


    Original     		PDF BFP640 VPS05605 OT343 Aug-16-2004 R4S BFP640 BFP640 transistor ph 45 v marking r4s

    Untitled

    Abstract: No abstract text available
    Text: BFP640ESD Robust Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.1, 2012-09-17 RF & Protection Devices Edition 2012-09-17 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved.


    Original     		PDF BFP640ESD OT343 OT343-PO OT343-FP BFP640ESD: OT323-TP

    gummel poon model parameter HBT

    Abstract: 726-BFP640FESDH6327 Germanium Transistor
    Text: BFP640FESD Robust High Performance Low Noise Bipolar RF Transistor Data Sheet Revision 1.1, 2010-06-29 RF & Protection Devices Edition 2010-06-29 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved.


    Original     		PDF BFP640FESD BFP640FESD: 726-BFP640FESDH6327 640FESD H6327 gummel poon model parameter HBT Germanium Transistor

    marking r4s

    Abstract: bfp640f BFP640F equivalent ccb 21
    Text: BFP640F XYs NPN Silicon Germanium RF Transistor* • High gain low noise RF transistor 3 • Provides outstanding performance 2 4 for a wide range of wireless applications 1 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz


    Original     		PDF BFP640F Mar-11-2004 marking r4s bfp640f BFP640F equivalent ccb 21

    marking re

    Abstract: BFP640 BGA420 T-25
    Text: BFP640 NPN Silicon Germanium RF Transistor • High gain low noise RF transistor 3 • Provides outstanding performance 2 4 for a wide range of wireless applications 1 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz


    Original     		PDF BFP640 OT343 marking re BFP640 BGA420 T-25

    bfp640

    Abstract: BFP640/F
    Text: BFP640 NPN Silicon Germanium RF Transistor 3 4 • High gain low noise RF transistor • Provides outstanding performance for a wide range of wireless applications 2 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz


    Original     		PDF BFP640 VPS05605 OT343 bfp640 BFP640/F

    Untitled

    Abstract: No abstract text available
    Text: BFP640FESD Robust High Performance Low Noise Bipolar RF Transistor Data Sheet Revision 1.1, 2010-06-29 RF & Protection Devices Edition 2010-06-29 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved.


    Original     		PDF BFP640FESD BFP640FESD:

    BFP640 noise figure

    Abstract: s parameters 4ghz
    Text: BFP640 E/L6327 and E/L7764 NPN Silicon Germanium RF Transistor 3 4 • High gain low noise RF transistor • Provides outstanding performance for a wide range of wireless applications 2 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz


    Original     		PDF BFP640 E/L6327 E/L7764 L6327 L7764 VPS05605 BFP640 Oct-30-2003 BFP640 noise figure s parameters 4ghz

    marking r4s

    Abstract: R4S BFP640 BFP640 BFP640 noise figure
    Text: BFP640 3 NPN Silicon Germanium RF Transistor Preliminary data 4  High gain low noise RF transistor  Provides outstanding performance for a wide range of wireless applications 2  Ideal for CDMA and WLAN applications 1  Outstanding noise figure F = 0.65 dB at 1.8 GHz


    Original     		PDF BFP640 VPS05605 OT343 Jul-25-2002 marking r4s R4S BFP640 BFP640 BFP640 noise figure