BFP540 SPICE Search Results

BFP540 SPICE Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Transistor BFP540 Abstract: No abstract text available Text: BFP540 NPN Silicon RF Transistor • For highest gain low noise amplifier 3 at 1.8 GHz 2 4 • Outstanding Gms = 21.5 dB 1 Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET  45 - Line • Pb-free RoHS compliant package 1)	Original	BFP540 OT343 Transistor BFP540	PDF
bfp540 Abstract: INFINEON ATS BGA420 Text: BFP540 NPN Silicon RF Transistor • For highest gain low noise amplifier 3 at 1.8 GHz 2 4 • Outstanding Gms = 21.5 dB 1 Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET  45 - Line • Pb-free RoHS compliant package 1)	Original	BFP540 OT343 bfp540 INFINEON ATS BGA420	PDF
BFP540 Abstract: No abstract text available Text: BFP540 NPN Silicon RF Transistor 3 4 • For highest gain low noise amplifier at 1.8 GHz • Outstanding G ms = 21 dB Noise Figure F = 0.9 dB 2 • Gold metallization for high reliability • SIEGET 1 VPS05605 45 - Line ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	BFP540 VPS05605 OT343 50Ohm -j100 Jan-28-2004 BFP540	PDF
BFP540 Abstract: INFINEON ATS BGA420 Transistor BFP540 Text: BFP540 NPN Silicon RF Transistor • For highest gain low noise amplifier 3 at 1.8 GHz 2 4 • Outstanding G ms = 21.5 dB 1 Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET  45 - Line ESD Electrostatic discharge sensitive device, observe handling precaution!	Original	BFP540 OT343 BFP540 INFINEON ATS BGA420 Transistor BFP540	PDF
BFP540 Abstract: INFINEON application note Text: SIEGET 45 BFP540 NPN Silicon RF Transistor Preliminary data 3 For highest gain low noise amplifier 4 at 1.8 GHz Outstanding Gms = 21 dB Noise Figure F = 0.9 dB Gold metallization for high reliability 2 SIEGET 45 - Line 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	BFP540 VPS05605 OT343 50Ohm -j100 Aug-09-2001 BFP540 INFINEON application note	PDF
Untitled Abstract: No abstract text available Text: BFP540 Low Noise Silicon Bipolar RF Transistor • For highest gain and low noise amplifier 3 • Outstanding Gms = 21.5 dB at 1.8 GHz Minimum noise figure NFmin = 0.9 dB at 1.8 GHz 2 4 1 • Pb-free RoHS compliant and halogen-free package with visible leads	Original	BFP540 AEC-Q101 OT343	PDF
BFP540 Abstract: 030232 Text: BFP540 NPN Silicon Germanium RF Transistor 3 4 • For highest gain low noise amplifier at 1.8 GHz • Outstanding G ms = 21 dB 2 Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET 1 VPS05605 45 - Line ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	BFP540 VPS05605 OT343 50Ohm -j100 Aug-29-2003 BFP540 030232	PDF
INFINEON ATS Abstract: BFP540 BGA420 Text: BFP540 NPN Silicon RF Transistor • For highest gain low noise amplifier 3 at 1.8 GHz 2 4 • Outstanding Gms = 21.5 dB 1 Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET  45 - Line • Pb-free RoHS compliant package 1)	Original	BFP540 OT343 INFINEON ATS BFP540 BGA420	PDF
Untitled Abstract: No abstract text available Text: BFP540 NPN Silicon RF Transistor • For highest gain low noise amplifier 3 at 1.8 GHz 2 4 • Outstanding Gms = 21.5 dB 1 Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET  45 - Line • Pb-free RoHS compliant package 1)	Original	BFP540 OT343	PDF
Untitled Abstract: No abstract text available Text: BFP540 NPN Silicon RF Transistor 3 4 • For highest gain low noise amplifier at 1.8 GHz • Outstanding Gms = 21.5 dB 2 Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET 1 VPS05605 45 - Line ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	BFP540 VPS05605 OT343 50Ohm Jul-22-2004 -j100	PDF
Untitled Abstract: No abstract text available Text: BFP540 NPN Silicon RF Transistor 3 4 • For highest gain low noise amplifier at 1.8 GHz • Outstanding Gms = 21.5 dB 2 Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET 1 VPS05605 45 - Line ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	BFP540 VPS05605 OT343	PDF
BFP540 Abstract: No abstract text available Text: BFP540 NPN Silicon RF Transistor 3 4 • For highest gain low noise amplifier at 1.8 GHz • Outstanding Gms = 21.5 dB 2 Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET 1 VPS05605 45 - Line ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	BFP540 VPS05605 OT343 BFP540	PDF
Untitled Abstract: No abstract text available Text: BFP540 NPN Silicon Germanium RF Transistor 3 4 For highest gain low noise amplifier at 1.8 GHz Outstanding Gms = 21 dB 2 Noise Figure F = 0.9 dB Gold metallization for high reliability 1 SIEGET 45 - Line VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	BFP540 VPS05605 OT343 50Ohm -j100 Jul-14-2003	PDF
BFP540 Abstract: ma 8920 BGB540 GPS05605 T513 INFINEON transistor marking s-parameter RF POWER TRANSISTOR NPN S11 INFINEON T0559 69c3 Text: Data sheet, BGB540, Sept. 2002 BGB540 Active Biased RF Transistor MMIC Wireless Silicon Discretes N e v e r s t o p t h i n k i n g . Edition 2002-09-11 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München Infineon Technologies AG 2002.	Original	BGB540, BGB540 D-81541 BGB540 BFP540. GPS05605 BFP540 ma 8920 GPS05605 T513 INFINEON transistor marking s-parameter RF POWER TRANSISTOR NPN S11 INFINEON T0559 69c3	PDF

BF547A Abstract: transistor bf 175 BFG65 equivalent BF547B BFG25AXD Text: Philips Sem iconductors RF Wideband Transistors The New Generation Contents page PREFACE 3 SELECTION GUIDE 6 S-PARAMETERS 22 SPICE AND PACKAGE PARAMETERS 44 THERMAL CHARACTERISTICS 48 DEVICE DATA in alpha-num eric sequence 54 OUTLINES 442 INDEX 448 DEFINITIONS	OCR Scan	LCD01 BF547A transistor bf 175 BFG65 equivalent BF547B BFG25AXD	PDF