BUK555-50A
Abstract: BUK555-50B T0220AB
Text: N AMER PH IL I PS /D IS CR ET E SSE J> m bfciS3ci31 0D20t3S G • PowerMOS transìstor Logic Level FET BUK555-50A BUK555-50B T “- 3 ? - y 3 QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope.
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OCR Scan
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bfaS3T31
0D20t3S
BUK555-50A
BUK555-50B
BUK555
Dra20
BUK555-50A
BUK555-50B
T0220AB
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BUK555-50A
Abstract: BUK555-50B T0220AB 418 NDS
Text: N AMER PHILIPS/DISCRETE SSE J> bfciS3ci31 0 D 2 0 t 3 S m G • PowerMOS transìstor Logic Level FET BUK555-50A BUK555-50B N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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OCR Scan
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bfaS3T31
0D20t3S
BUK555-50A
BUK555-50B
BUK555
BUK555-50B
T0220AB
418 NDS
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CNX82A
Abstract: philips cnx82a
Text: P h ilip s S em ico n d u cto rs Product specification CNX82A/CNX83A High-voltage optocouplers FEATURES • High current transfer ratio and low saturation voltage, making the devices suitable tor use with TTL integrated circuits • High degree of A C and DC
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OCR Scan
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CNX82A/CNX83A
CNX82A
CNX83Aare
OT231
CNX83A.
E90700
philips cnx82a
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