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    NXP Semiconductors BF998WR,115

    RF MOSFET 8V CMPAK-4
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    BF998W Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BF998W Infineon Technologies Silicon N-Channel MOSFET Tetrode Original PDF
    BF998W Siemens RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide Original PDF
    BF998W Siemens Silicon N-Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor) Original PDF
    BF998WR NXP Semiconductors BF998WR - N-channel dual-gate MOS-FET - CIS TYP: 2.1 pF; COS: 1.05 pF; ID: 30 mA; IDSS: 2 to 18 mA; IDSS min.: 1.05 mA; Noise figure: 1@800MHz dB; Note: With external bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 2 V; VDSmax: 12 V; YFS min.: 22 mS Original PDF
    BF998WR Philips Semiconductors N-channel dual-gate MOS-FET Original PDF
    BF998WR,115 NXP Semiconductors BF998 - TRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, PLASTIC, SOT-343R, 4 PIN, FET RF Small Signal Original PDF
    BF998WR,115 NXP Semiconductors N-channel dual-gate MOS-FET - CIS TYP: 2.1 pF; COS: 1.05 pF; ID: 30 mA; IDSS: 2 to 18 mA; IDSS min.: 1.05 mA; Noise figure: 1@800MHz dB; Note: With external bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 2 V; VDSmax: 12 V; YFS min.: 22 mS; Package: SOT343R (CMPAK-4); Container: Tape reel smd Original PDF
    BF998WRT/R NXP Semiconductors N-channel dual-gate MOS-FET - CIS TYP: 2.1 pF; COS: 1.05 pF; ID: 30 mA; IDSS: 2 to 18 mA; IDSS min.: 1.05 mA; Noise figure: 1@800MHz dB; Note: With external bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 2 V; VDSmax: 12 V; YFS min.: 22 mS Original PDF
    BF998WRTR Philips Semiconductors N-channel dual-gate MOS-FET Original PDF

    BF998W Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BB405

    Abstract: BF998WR 4814 mosfet dual-gate MGC480
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BF998WR N-channel dual-gate MOS-FET Product specification Supersedes data of 1995 Apr 25 File under Discrete Semiconductors, SC07 1997 Sep 05 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF998WR


    Original     		PDF BF998WR SCA55 117067/00/02/pp12 BB405 BF998WR 4814 mosfet dual-gate MGC480

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT BF998WR N-channel dual-gate MOS-FET Product specification Supersedes data of 1995 Apr 25 1997 Sep 05 NXP Semiconductors Product specification N-channel dual-gate MOS-FET BF998WR FEATURES PINNING • High forward transfer admittance


    Original     		PDF BF998WR R77/02/pp13

    BF998W

    Abstract: SOT 343 MARKING BF BF998
    Text: BF998W Silicon N-Channel MOSFET Tetrode 3  Short-channel transistor 4 with high S/C quality factor  For low-noise, gain-controlled input stages up to 1 GHz 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking


    Original     		PDF BF998W VPS05605 OT-343 Cha00 EHT07305 EHT07306 May-05-1999 BF998W SOT 343 MARKING BF BF998

    Untitled

    Abstract: No abstract text available
    Text: BF998WR Transistors N-Channel; Dual-Gate Tetrode MOSFET V BR DSS (V)12 V(BR)GSS (V)20 I(D) Max. (A)30m I(DM) Max. (A) Pulsed I(D) @Temp (øC) Absolute Max. Power Diss. (W)300m’ Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Amb.350


    Original     		PDF BF998WR

    BF998W

    Abstract: 998 transistor bf998 102001 transistor BF 998
    Text: BF998W Silicon N-Channel MOSFET Tetrode 3  Short-channel transistor 4 with high S/C quality factor  For low-noise, gain-controlled input stages up to 1 GHz 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking


    Original     		PDF BF998W VPS05605 OT343 EHT07305 EHT07306 Aug-10-2001 BF998W 998 transistor bf998 102001 transistor BF 998

    BF998WR

    Abstract: dual-gate
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BF998WR N-channel dual-gate MOS-FET Product specification Supersedes data of 1995 Apr 25 1997 Sep 05 NXP Semiconductors Product specification N-channel dual-gate MOS-FET BF998WR FEATURES PINNING • High forward transfer admittance


    Original     		PDF BF998WR R77/02/pp13 BF998WR dual-gate

    MRF581

    Abstract: 2SK163 BFG480W NB b6 smd transistor 2SK508 SMD transistor n36 bf998 TEF6860HL 3SK290 baw 92
    Text: RF᠟‫ݠ‬㄀8⠜ RF RFׂ೗‫ڦ‬ᆌᆩࢅยऺ๮֩ 2006౎6ሆ ݀քන೺ǖ2006౎6ሆ ࿔ॲຩႾࡽǖ9397 750 15589 Henk RoelofsLjޭጺ֋&ጺঢ়૙RFׂ೗ ०঻ ௅ᅃӲԨ࿢்‫ࣷۼ‬ၠጲम༵‫؜‬཈቟ᅜ߀฀࿢்‫ڦ‬RF๮֩ă‫ڼ‬8Ӳᄺփ૩ྔă࿢்ᅙཁेକ߸‫ܠ‬एᇀ


    Original     		PDF

    Motorola transistor smd marking codes

    Abstract: walkie-talkie transceiver diagram BFM505 BF256B spice model 2SK163 UAF3000 BGO807C FET marking code 365 marking code M2 SOT23 SOT56
    Text: RF Manual 8 edition th Application and design manual for RF products June 2006 date of release: June 2006 document order number: 9397 750 15589 Henk Roelofs,Vice President & General Manager RF Products Introduction Every edition we challenge ourselves to improve our RF manual. This 8th edition is no exception.


    Original     		PDF

    LPC2148 i2c

    Abstract: BGB210S lpc2148 interfacing 2.8" TFT LCD DISPLAY BGB210 embedded c code to interface lpc2148 with sensor BGW200 TDA8932T tda8920bj NXP PN531 TDA8947J equivalent
    Text: Building blocks for vibrant media Highlights of the NXP product portfolio Building blocks for vibrant media  At NXP Semiconductors, the new company founded by Philips, we’re driven by a single purpose — to deliver vibrant media technologies that create better sensory experiences.


    Original     		PDF OT363 SC-88) LPC2148 i2c BGB210S lpc2148 interfacing 2.8" TFT LCD DISPLAY BGB210 embedded c code to interface lpc2148 with sensor BGW200 TDA8932T tda8920bj NXP PN531 TDA8947J equivalent

    an10133

    Abstract: capacitor 100nf 16v x7r 10 1005 murata TEA5767/68 Garage Door Opener remote circuit diagrams philips rf manual balanced modulator ic 1496 2.4GHz Cordless Phone circuit diagram A case 10uf (10v) ±20% Chip Tantal TEA5767 working principle scanner block diagram
    Text: Philips RF Manual product & design manual for RF small signal discretes 3rd edition July 2003 APPENDIX / documentation/rf_manual Document number: 4322 252 06385 Date of release: July 2003


    Original     		PDF BB202, BF1107/8 BGA6589 BGA6589. BGA6589 an10133 capacitor 100nf 16v x7r 10 1005 murata TEA5767/68 Garage Door Opener remote circuit diagrams philips rf manual balanced modulator ic 1496 2.4GHz Cordless Phone circuit diagram A case 10uf (10v) ±20% Chip Tantal TEA5767 working principle scanner block diagram

    BC548 TRANSISTOR REPLACEMENT

    Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
    Text: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction


    Original     		PDF BAP1321-02 BAP65-05 BAP65-03 BAP65-05W BAP65-02 BAP63-03 BAP63-02 BAP64-03 BAP64-02 BB143 BC548 TRANSISTOR REPLACEMENT TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587

    uaf4000

    Abstract: toshiba smd marking code transistor smd code marking wl sot23 RF LNB C band chipset M74 marking BFG480W SMD transistor n36 vHF amplifier module 2450Mhz TOSHIBA DIODE CATALOG DIODE RF DETECTOR
    Text: RFマニュアル第9版 RF製品用のアプリケーションおよび設計マニュアル 2006年11月 date of release: November 2006 document order number: 9397 750 15817 Henk RoelofsRF製品担当副社長兼ゼネラル・マネージャー はじめに


    Original     		PDF 20GHz uaf4000 toshiba smd marking code transistor smd code marking wl sot23 RF LNB C band chipset M74 marking BFG480W SMD transistor n36 vHF amplifier module 2450Mhz TOSHIBA DIODE CATALOG DIODE RF DETECTOR

    BF1201A

    Abstract: bf1211 dual gate mosfet bfq34 application note SA636 BFG480W BF862 AM LNA BFR10 SA676 Reliability SA612A SA614A
    Text: RF Products RF Products 241 RF Access Systems CATV RF Hybrid Amplifiers Type Number Description Frequency Range Gain dB Slope (dB) FL S11/S22 CTB XMOD CSO @Ch @Vo (dBmV) F @fmax Itot (mA) BGS67A 65 MHz, 25.5 dB gain Reverse Amplifier, 12 V 5 - 65 25 - 26


    Original     		PDF S11/S22 BGS67A BGY68 BGY66B BGY67 13MHz 900MHz SA8027 TSSOP20) 44MHz BF1201A bf1211 dual gate mosfet bfq34 application note SA636 BFG480W BF862 AM LNA BFR10 SA676 Reliability SA612A SA614A

    smd code book

    Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
    Text: The SMD Code Book 1st character of code 0123456789 ABCDEFGHI JKLMNOPQ R STUVWXYZ Bases The SMD Codebook R P Blackwell, GM4PMK To look up a coded device, click on the first character of the device code in the table on the left. A-F G-K L-P Q-V W-Z AQ-FQ GQ-LQ


    Original     		PDF OD-80 OD123/323 OT-23, OT346 OT-323, OT-416 OT-223, OT-89 OT-143, OT-363 smd code book transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes

    BFG591 amplifier

    Abstract: 5.8GHz Analog RF mmic MRF6Vp3450 nxp Standard Marking BLF6G21-10G FET 2N5459 RF LNB C band chipset radar 77 ghz sige 82 sot363-6 Dect antenna smd code marking ft sot23
    Text: RF手册 第12版 RF产品的应用和设计手册 2009年6月 Experience high-performance analog 体验高性能模拟产品 恩智浦RF手册令设计更简易 恩智浦 RF手册是当今RF设计市场上最重要的参考工具之一，展示了我们恩智浦半导体 (NXP


    Original     		PDF TFF1007HN TFF11070HN TFF11073HN TFF11077HN TFF11080HN TFF11084HN TFF11088HN TFF11092HN TFF11096HN TFF11101HN BFG591 amplifier 5.8GHz Analog RF mmic MRF6Vp3450 nxp Standard Marking BLF6G21-10G FET 2N5459 RF LNB C band chipset radar 77 ghz sige 82 sot363-6 Dect antenna smd code marking ft sot23

    RF1119

    Abstract: TZA3036 lnb ku UAA 1006 BF862 AM LNA BFG480W ic lnb 2SK163-L TFF1003 TFF1003HN
    Text: RF᠟‫ݠ‬㄀11⠜ RFѻકⱘᑨ⫼੠䆒䅵᠟‫ݠ‬ 2008ᑈ9᳜ www.nxp.com 2008 NXP B.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract,


    Original     		PDF PMBFJ177 PMBFJ308 PMBFJ309 PMBFJ310 PMBFJ620 PRF947 PRF949 PRF957 TFF1000HN TFF1003HN RF1119 TZA3036 lnb ku UAA 1006 BF862 AM LNA BFG480W ic lnb 2SK163-L TFF1003 TFF1003HN

    2SK43 transistor

    Abstract: smd transistor m29 sot343 UXA23465 Motorola transistor smd marking codes walkie-talkie transceiver diagram UXA23476 diode SMD WL sot23 BF862 AM LNA uaf3000 2SK163
    Text: th 1 ed ition 10 th editio n t h 1 e d th i t i o n RF manual 10 edition 10 Application and design manual for RF products TH September 2007 www.nxp.com 2007 NXP B.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written


    Original     		PDF

    Audio Power Amplifier MOSFET TOSHIBA

    Abstract: P-Channel Depletion Mosfets RF MODULE CIRCUIT DIAGRAM dect gaas fet vhf uhf varicap diode Laser Diode for dvd 500 mW 2SK508 J113 equivalent BGY88/04 MOTOROLA N CHANNEL POWER MOS FET TRANSISTORS
    Text: Semiconductors RF Manual 6th edition Application and design manual for RF products May 2005 date of release: May 2005 document order number: 9397 750 15125 Semiconductors Henk Roelofs,Vice President & General Manager RF Products Introduction The RF Manual covers a broad variety of material and many aspects about RF systems. It shows


    Original     		PDF

    UPC8236

    Abstract: MRFE6VP m74 7 segment display Mounting and Soldering of RF transistors MOBILE jammer GSM 1800 MHZ circuit diagram BLF4G08LS-160A rf Amplifier mhz Doherty 470-860 RF transceiver 802.11AC AN10882 m74 7 segment display input
    Text: RF Manual 16 edition th Application and design manual for High Performance RF products June 2012 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s


    Original     		PDF

    Sony Semiconductor Replacement Handbook 1991

    Abstract: 2sc5088 horizontal transistors tcxo philips 4322 20000w audio amplifier circuit diagram replacement for 2sc5088 horizontal transistors motorola power fet rf databook 2SK170BL Funkamateur transistor 1060 schematic diagram tv sony
    Text: Philips RF Manual product & design manual for RF small signal discretes 3 edition July 2003 rd / discretes/documentation/rf_manual Document number: 4322 252 06384 Date of release: July 2003 3rd edition


    Original     		PDF

    bf998

    Abstract: bf998 mosfet tetrode application note bf998w TRANSISTOR mosfet BF998 BF998R
    Text: BF998. Silicon N_Channel MOSFET Tetrode • Short-channel transistor with high S / C quality factor • For low-noise, gain-controlled input stage up to 1 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Package Pin Configuration


    Original     		PDF BF998. BF998 OT143 BF998R OT143R BF998W OT343 BF998, Feb-13-2004 bf998 bf998 mosfet tetrode application note bf998w TRANSISTOR mosfet BF998 BF998R

    STF12A80

    Abstract: BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B
    Text: Cross Reference For the most up to date cross reference, go to the product portal: Manufacturer type number Manufacturer Philips type number Page number Manufacturer type number Manufacturer


    Original     		PDF 02CZ10 02CZ11 02CZ12 02CZ13 02CZ15 02CZ16 02CZ18 02CZ2 02CZ20 STF12A80 BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B

    Untitled

    Abstract: No abstract text available
    Text: Product specification Philips Semiconductors BF998WR N-channel dual-gate MOS-FET PINNING FEATURES • High forward transfer admittance • Short channel transistor with high forward transfer admittance to input capacitance ratio • Low noise gain controlled amplifier up to 1 GHz.


    OCR Scan     		PDF BF998WR OT343R

    sot23 marking M6p

    Abstract: PMBFJ111 PMBFJ174
    Text: Philips Semiconductors Marking codes Small-signal Field-effect Transistors Types in SOT23, SOT89, SOT143 and SOT343 envelopes are marked with a code as listed in the following tables. TYPE NUM BER M A R K IN G CODE M A R K IN G TYPE NUMBER CODE TYPE NUM BER


    OCR Scan     		PDF OT143 OT343 BF510 BF994S BST120 BF511 BF996S BST122 BF512 BF997 sot23 marking M6p PMBFJ111 PMBFJ174