BF998R |
|
Infineon Technologies
|
Single Non Biased; Package: PG-SOT143-4; ID (max): 30.0 mA; Ptot (max): 200.0 mW; gfs (typ): 24.0 mS; Gp (typ): 20.0 dB; F (typ): 1.8 dB; |
|
Original |
PDF
|
BF998R |
|
Infineon Technologies
|
Silicon N-Channel MOSFET Tetrode |
|
Original |
PDF
|
BF998R |
|
Infineon Technologies
|
Silicon N-Channel MOSFET Tetrode |
|
Original |
PDF
|
BF998R |
|
NXP Semiconductors
|
BF998R - Silicon N-channel dual-gate MOS-FETs - CIS TYP: 2.1 pF; COS: 1.05 pF; ID: 30 mA; IDSS: 2 to 18 mA; IDSS min.: 1.05 mA; Noise figure: 1@800MHz dB; Note: With external bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 2 V; VDSmax: 12 V; YFS min.: 21 mS |
|
Original |
PDF
|
BF998R |
|
Philips Semiconductors
|
Silicon N-channel dual-gate MOS-FETs |
|
Original |
PDF
|
BF998R |
|
Philips Semiconductors
|
Silicon N-Channel Dual Gate MOS-FET |
|
Original |
PDF
|
BF998R |
|
Siemens
|
Silicon N-Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor) |
|
Original |
PDF
|
BF 998R |
|
Siemens
|
MOSFET, Silicon N-Channel MOSFET Tetrode |
|
Original |
PDF
|
BF998R |
|
Vishay Telefunken
|
TRANS MOSFET N-CH 12V 0.03A 4SOT-143R |
|
Original |
PDF
|
BF998R |
|
Vishay Telefunken
|
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode |
|
Original |
PDF
|
BF998R |
|
Philips Semiconductors
|
Silicon N-Channel Dual Gate MOS-FET |
|
Scan |
PDF
|
BF998R,215 |
|
NXP Semiconductors
|
BF998 - TRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, MICRO MINIATURE, PLASTIC PACKAGE-4, FET RF Small Signal |
|
Original |
PDF
|
BF998R,215 |
|
NXP Semiconductors
|
Silicon N-channel dual-gate MOS-FETs - CIS TYP: 2.1 pF; COS: 1.05 pF; ID: 30 mA; IDSS: 2 to 18 mA; IDSS min.: 1.05 mA; Noise figure: 1@800MHz dB; Note: With external bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 2 V; VDSmax: 12 V; YFS min.: 21 mS; Package: SOT143R (SC-61B); Container: Tape reel smd |
|
Original |
PDF
|
BF998R,235 |
|
NXP Semiconductors
|
BF998R - Silicon N-channel dual-gate MOS-FETs, SOT143R Package, Standard Marking, Reel Pack, SMD, Low Profile, Large |
|
Original |
PDF
|
|
BF998R,235 |
|
NXP Semiconductors
|
Silicon N-channel dual-gate MOS-FETs - CIS TYP: 2.1 pF; COS: 1.05 pF; ID: 30 mA; IDSS: 2 to 18 mA; IDSS min.: 1.05 mA; Noise figure: 1@800MHz dB; Note: With external bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 2 V; VDSmax: 12 V; YFS min.: 21 mS; Package: SOT143R (SC-61B); Container: Tape reel smd |
|
Original |
PDF
|
BF998RA |
|
Vishay Telefunken
|
TRANS MOSFET N-CH 12V 0.03A 4SOT-143R |
|
Original |
PDF
|
BF998RA |
|
Vishay Telefunken
|
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode |
|
Original |
PDF
|
BF998RA-GS08 |
|
Vishay Telefunken
|
TRANS MOSFET N-CH 12V 0.03A 4SOT-143R |
|
Original |
PDF
|
BF998RAW |
|
Vishay Telefunken
|
TRANS MOSFET N-CH 12V 0.03A 4SOT-343R |
|
Original |
PDF
|
BF998RAW |
|
Vishay Telefunken
|
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode |
|
Original |
PDF
|