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    BF12 Search Results

    BF12 Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    9250BF-12LF Renesas Electronics Corporation Frequency Timing Generator for PENTIUM II/III Systems Visit Renesas Electronics Corporation
    9250BF-12LFT Renesas Electronics Corporation Frequency Timing Generator for PENTIUM II/III Systems Visit Renesas Electronics Corporation
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    BF12 Price and Stock

    GCT Semiconductor Inc BF121-18-A-1-L-C

    18POS, 2MM PITCH SOCKET, DIL, SM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BF121-18-A-1-L-C Digi-Reel 3,222 1
    • 1 $1.11
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    • 1000 $0.641
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    BF121-18-A-1-L-C Cut Tape 3,222 1
    • 1 $1.48
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    BF121-18-A-1-L-C Reel 1,200 1,200
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    GCT Semiconductor Inc BF121-08-A-0-L-C

    8POS, 2MM PITCH SOCKET, DIL, SMT
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    DigiKey BF121-08-A-0-L-C Reel 1,200 1,200
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    Newark BF121-08-A-0-L-C Cut Tape 3,590 1
    • 1 $0.915
    • 10 $0.814
    • 100 $0.712
    • 1000 $0.596
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    BF121-08-A-0-L-C Reel 1,200 1,200
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    GCT Semiconductor Inc BF121-06-A-1-L-C

    6POS, 2MM PITCH SOCKET, DIL, SMT
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    DigiKey BF121-06-A-1-L-C Reel 1,200 1,200
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    Infineon Technologies AG CY9BF122LPMC-G-MNE2

    IC MCU 32BIT 96KB FLASH 64LQFP
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    DigiKey CY9BF122LPMC-G-MNE2 Tray 1,190 1
    • 1 $5.97
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    Rochester Electronics CY9BF122LPMC-G-MNE2 1,962 1
    • 1 $4.43
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    • 100 $4.16
    • 1000 $3.77
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    Microchip Technology Inc AT28HC64BF-12JU

    IC EEPROM 64KBIT PARALLEL 32PLCC
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    DigiKey AT28HC64BF-12JU Tube 893 1
    • 1 $6.07
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    Newark AT28HC64BF-12JU Bulk 66 1
    • 1 $6.13
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    Microchip Technology Inc AT28HC64BF-12JU Tube 512 7 Weeks
    • 1 $5.89
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    NAC AT28HC64BF-12JU Tube 416 1
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    Avnet Silica AT28HC64BF-12JU 11 Weeks 32
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    EBV Elektronik AT28HC64BF-12JU 10 Weeks 32
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    BF12 Datasheets (210)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BF12 PEPPERL+FUCHS M12 DIA MOUNTING FLANGE Original PDF
    BF120 Micro Electronics High Voltage Transistors Scan PDF
    BF120 Micro Electronics Semiconductor Device Data Book Scan PDF
    BF120 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    BF120 Unknown Cross Reference Datasheet Scan PDF
    BF120 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BF120 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BF120 Unknown Diode, Transistor, Thyristor Datasheets and more Scan PDF
    BF120 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    BF120 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BF120 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    BF120 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BF120 Semico High Voltage Transistors Scan PDF
    BF120-06-A-0-N-D GCT Semiconductor 6W, 2MM SOCKET, DIL, SMT, VERT, Original PDF
    BF120-08-A-0-N-D GCT Semiconductor 8W, 2MM SOCKET, DIL, SMT, VERT, Original PDF
    BF1200A Seiko Epson Surface Mount Crystal Oscillators Original PDF
    BF1201 NXP Semiconductors BF1201 - TRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, FET RF Small Signal Original PDF
    BF1201 Philips Semiconductors N-channel dual-gate PoLo MOS-FETs Original PDF
    BF120-10-A-0-N-D GCT Semiconductor 10W, 2MM SOCKET, DIL, SMT, VERT, Original PDF
    BF1201,215 NXP Semiconductors BF1201 - N-channel dual-gate PoLo MOS-FETs, SOT143B Package, Standard Marking, Reel Pack, SMD, Low Profile, 7" Reel Original PDF
    ...

    BF12 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Low Capacitance MOS FET 13005

    Abstract: BF1205C
    Text: BF1205C Dual N-channel dual gate MOS-FET Rev. 02 — 15 August 2006 Product data sheet 1. Product profile 1.1 General description The BF1205C is a combination of two dual gate MOS-FET amplifiers with shared source and gate 2 leads and an integrated switch. The integrated switch is operated by the gate 1


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    BF1205C BF1205C OT363 Low Capacitance MOS FET 13005 PDF

    052-101

    Abstract: No abstract text available
    Text: 052-101 7-Port Unmanaged Ethernet Switch 10/100/1000 BASE-T With Series 805 Mighty Mouse Connector REV A B DESCRIPTION Initial Release Per DCN 52458 BF12U2-1671 DATE 8/11/2014 10/7/2014 APPROVED MF RAS THIS COPYRIGHTED DOCUMENT IS THE PROPERTY OF GLENAIR, INC. AND IS FURNISHED ON THE CONDITION THAT IT IS NOT TO


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    BF12U2-1671 052-101 PDF

    HD66750

    Abstract: BF128128A HD6675 4R10
    Text: BO LYMIN BF128128A Feature 1. FSTN Transflective LCD, COF package 2. Built-in driver HD66750 3. 1/128 duty cycle 4. +3V single power supply 5. Option: temperature compensation Dimension 0.6Max Symbol Condition Typical Unit Value Input Voltage Vdd Vdd = +3V 3.0


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    BF128128A HD66750 4-R10 HD6675 HD66750 BF128128A HD6675 4R10 PDF

    Untitled

    Abstract: No abstract text available
    Text: BF1205C Dual N-channel dual gate MOS-FET Rev. 3 — 7 September 2011 Product data sheet 1. Product profile 1.1 General description The BF1205C is a combination of two dual gate MOS-FET amplifiers with shared source and gate 2 leads and an integrated switch. The integrated switch is operated by the gate 1


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    BF1205C BF1205C OT363 PDF

    BF1208

    Abstract: transistor BF1208 Dual N-channel dual gate MOSFET MARKING CODE 2l mosfet 7810
    Text: 66 SO T6 BF1208 Dual N-channel dual gate MOSFET Rev. 2 — 7 September 2011 Product data sheet 1. Product profile 1.1 General description The BF1208 is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads and an integrated switch. The integrated switch is operated by the gate1


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    BF1208 BF1208 OT666 transistor BF1208 Dual N-channel dual gate MOSFET MARKING CODE 2l mosfet 7810 PDF

    hg1b

    Abstract: marking 822 sot363
    Text: BF1207 Dual N-channel dual gate MOSFET Rev. 2 — 7 September 2011 Product data sheet 1. Product profile 1.1 General description The BF1207 is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads and an integrated switch. The source and substrate are interconnected. Internal bias circuits enable Direct Current


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    BF1207 BF1207 OT363 hg1b marking 822 sot363 PDF

    BF1202WR

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT BF1202; BF1202R; BF1202WR N-channel dual-gate PoLo MOS-FETs Product specification Supersedes data of 2000 Mar 29 2010 Sep 16 NXP Semiconductors Product specification N-channel dual-gate PoLo MOS-FETs FEATURES BF1202; BF1202R; BF1202WR


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    BF1202; BF1202R; BF1202WR MSB035 BF1202R R77/03/pp15 BF1202WR PDF

    TRANSISTOR BF1204

    Abstract: BF1204
    Text: DISCRETE SEMICONDUCTORS DAT handbook, halfpage MBD128 BF1204 Dual N-channel dual gate MOS-FET Product specification Supersedes data of 2001 Apr 25 2010 Sep 16 NXP Semiconductors Product specification Dual N-channel dual gate MOS-FET FEATURES BF1204 PINNING - SOT363


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    MBD128 BF1204 OT363 R77/03/pp13 TRANSISTOR BF1204 BF1204 PDF

    Untitled

    Abstract: No abstract text available
    Text: BF1205C Dual N-channel dual gate MOS-FET Rev. 3 — 7 September 2011 Product data sheet 1. Product profile 1.1 General description The BF1205C is a combination of two dual gate MOS-FET amplifiers with shared source and gate 2 leads and an integrated switch. The integrated switch is operated by the gate 1


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    BF1205C BF1205C OT363 PDF

    Untitled

    Abstract: No abstract text available
    Text: SO T6 66 BF1206F Dual N-channel dual gate MOSFET Rev. 2 — 7 September 2011 Product data sheet 1. Product profile 1.1 General description The BF1206F is a combination of two different dual gate MOSFET amplifiers with shared source and gate2 leads. The source and substrate are interconnected. Internal bias circuits enable Direct Current


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    BF1206F BF1206F OT666 PDF

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT handbook, halfpage MBD128 BF1205 Dual N-channel dual gate MOS-FET Product specification 2003 Sep 30 NXP Semiconductors Product specification Dual N-channel dual gate MOS-FET FEATURES BF1205 PINNING - SOT363 • Two low noise gain controlled amplifiers in a single


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    MBD128 BF1205 OT363 R77/01/pp25 PDF

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT BF1211; BF1211R; BF1211WR N-channel dual-gate MOS-FETs Product specification 2003 Dec 16 NXP Semiconductors Product specification BF1211; BF1211R; BF1211WR N-channel dual-gate MOS-FETs FEATURES PINNING • Short channel transistor with high forward transfer


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    BF1211; BF1211R; BF1211WR R77/01/pp16 PDF

    br 8764

    Abstract: marking 822 sot363 6710 mosfet sp 9753 BF1214 sc 6700 N-CHANNEL dual gate ultra low noise vhf AMPLIFIER
    Text: BF1214 Dual N-channel dual gate MOSFET Rev. 01 — 30 October 2007 Product data sheet 1. Product profile 1.1 General description The BF1214 is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads. The source and substrate are interconnected. Internal bias circuits enable


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    BF1214 BF1214 OT363 br 8764 marking 822 sot363 6710 mosfet sp 9753 sc 6700 N-CHANNEL dual gate ultra low noise vhf AMPLIFIER PDF

    BF1212R datasheet

    Abstract: BF121 BF1212 BF1212R BF1212WR dual-gate marking CODE ML
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BF1212; BF1212R; BF1212WR N-channel dual-gate MOS-FETs Product specification 2003 Nov 14 Philips Semiconductors Product specification N-channel dual-gate MOS-FETs BF1212; BF1212R; BF1212WR FEATURES PINNING • Short channel transistor with high forward transfer


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    BF1212; BF1212R; BF1212WR SCA75 R77/02/pp15 BF1212R datasheet BF121 BF1212 BF1212R BF1212WR dual-gate marking CODE ML PDF

    Untitled

    Abstract: No abstract text available
    Text: BF127 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)30 V(BR)CBO (V) I(C) Max. (A)25m Absolute Max. Power Diss. (W)330m Minimum Operating Temp (øC) Maximum Operating Temp (øC)125õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)


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    BF127 Freq350M PDF

    Untitled

    Abstract: No abstract text available
    Text: BF120 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)220 V(BR)CBO (V) I(C) Max. (A)50m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)200nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    BF120 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1 3 2 6 5 4 7 8 Global Connector Technology Ltd. - BF120: 2.0mm PITCH SOCKET, DUAL ROW, SURFACE MOUNT, DUAL ENTRY A A B B C C D D E E SPECIFICATIONS 规格 CURRENT RATING 电流额定值 : 2 AMP Ordering Grid INSULATOR RESISTANCE 绝缘电阻值 : 1000 MEGOHMS MIN.


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    BF120: 20mOHMS 94-V0 PDF

    097.176

    Abstract: bs 3676 BF1208D b4102
    Text: BF1208D Dual N-channel dual gate MOSFET Rev. 01 — 16 May 2007 Product data sheet 1. Product profile 1.1 General description The BF1208D is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads and an integrated switch. The integrated switch is operated by the gate1


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    BF1208D BF1208D OT666 097.176 bs 3676 b4102 PDF

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT handbook, halfpage MBD128 BF1206 Dual N-channel dual-gate MOS-FET Product specification 2003 Nov 17 NXP Semiconductors Product specification Dual N-channel dual-gate MOS-FET FEATURES BF1206 PINNING - SOT363 • Two low noise gain controlled amplifiers in a single


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    MBD128 BF1206 OT363 R77/01/pp22 PDF

    DUAL-GATE

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT BF1212; BF1212R; BF1212WR N-channel dual-gate MOS-FETs Product specification 2003 Nov 14 NXP Semiconductors Product specification BF1212; BF1212R; BF1212WR N-channel dual-gate MOS-FETs FEATURES PINNING • Short channel transistor with high forward transfer


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    BF1212; BF1212R; BF1212WR R77/02/pp16 DUAL-GATE PDF

    00941

    Abstract: BF1205
    Text: DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage MBD128 BF1205 Dual N-channel dual gate MOS-FET Product specification 2003 Sep 30 Philips Semiconductors Product specification Dual N-channel dual gate MOS-FET FEATURES BF1205 PINNING - SOT363 • Two low noise gain controlled amplifiers in a single


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    MBD128 BF1205 OT363 SCA75 R77/01/pp24 00941 BF1205 PDF

    BF1203

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage MBD128 BF1203 Dual N-channel dual gate MOS-FET Preliminary specification 2000 May 29 Philips Semiconductors Preliminary specification Dual N-channel dual gate MOS-FET FEATURES BF1203 PINNING - SOT363 • Two low noise gain controlled amplifiers in a single


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    MBD128 BF1203 125004/00/01/pp8 PDF

    bf1216

    Abstract: Dual Gate MOSFET graphs dual gate mosfet in vhf amplifier SC-88 M5t transistor M5W
    Text: BF1216 Dual N-channel dual gate MOSFET Rev. 01 — 29 April 2010 Product data sheet 1. Product profile 1.1 General description The BF1216 is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads. The source and substrate are interconnected. Internal bias circuits enable DC stabilization


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    BF1216 BF1216 OT363 Dual Gate MOSFET graphs dual gate mosfet in vhf amplifier SC-88 M5t transistor M5W PDF

    K 2611 MOSFET

    Abstract: mosFET K 2611 m4t made K 2611 MOSFET VOLTAGE RATING BF1215 N-CHANNEL dual gate ultra low noise vhf LOW NOISE AMPLIFIER
    Text: BF1215 Dual N-channel dual gate MOSFET Rev. 01 — 6 May 2010 Product data sheet 1. Product profile 1.1 General description The BF1215 is a combination of two dual gate MOSFET amplifiers with shared source lead, shared gate2 lead and an integrated switch.


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    BF1215 BF1215 OT363 K 2611 MOSFET mosFET K 2611 m4t made K 2611 MOSFET VOLTAGE RATING N-CHANNEL dual gate ultra low noise vhf LOW NOISE AMPLIFIER PDF