BF 506 Search Results

transistor bf 184

Abstract: pnp vhf transistor TO50 transistor transistor BF 509 BF 914 transistor BF 184 transistor transistor BF 451
Contextual Info: m ils Uli S.A. TYPE NPN PNP BF BF BF BF BF BF BF BF BF BF BF BF BF BF BF BF BF 115 167 173 173S 180 181 184 185 198 199 200 214 215 240 241 254 255 BF BF BF BF BF 6 BF BF BF BF 272A 272B 316A 450 451 479 506 509 914 BFX 89 BFY 90 $ BFW 94 2N 918 2N 4957 2N 4958

transistor BF 509

Abstract: 479S bf diode transistor bf 271 transistors for uhf oscillators bf 107 a transistors bf UHF "AGC Amplifier" BF479 UHF pnp transistor
Contextual Info: CONSUMER TRANSISTORS IF amplifiers @ > o LU U o m and @ ÍD < < O E ai > < I- C3 Q_ @ CL □ a. BF 158 BF 160 BF 167 BF BF BF BF 173 251 271 274 BF 288 BF 454 BF 455 NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN »TO-18 epoxy IF amplifier for T V IF amplifier for A M -F M radio

circuit diagram of ddr ram

Abstract: HYB18M1G16 hy power 38 HYB18M1G161BF-6 HYE18M1G16 HYB18M1G160BF-6
Contextual Info: March 2007 HYB18M1G16[0/1]BF–6 HYE18M1G16[0/1]BF–6 HYB18M1G16[0/1]BF–7.5 HYE18M1G16[0/1]BF–7.5 DRAMs for Mobile Applications 1-Gbit x16 DDR Mobile-RAM RoHS compliant Data S heet Rev.1.0 Data Sheet HY[B/E]18M1G16[0/1]BF 1-Gbit DDR Mobile-RAM HYB18M1G16[0/1]BF–6, HYE18M1G16[0/1]BF–6, HYB18M1G16[0/1]BF–7.5

F245C

Abstract: F245A BC 245 C bf245 BF 245 2bf245 BF 245 B Siemens transistors rf C 245 b bf245c
Contextual Info: 25C D • fl535b05 Q0Q4MS7 2 « S I E Û T - K BF 245 A BF 245 B "BF 245 C N-Channel Junction Field-Effect Transistors SIEMENS AKTIEN6ESELLSCHAF 57 - l ï D - BF 245 A, B, and C are N-channel junction field-effect transistors in plastic package similar

transistor BF 506

Abstract: transistor f 506 BF506 506 k Q62702-F534
Contextual Info: BF 506 PNP Silicon RF Transistor ● BF 506 For VHF mixer and oscillator stages 2 1 Type Marking Ordering Code BF 506 – Q62702-F534 Pin Configuration 1 2 3 C B Package1 TO-92 E Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE0

BF245

Abstract: BF 245 2SC 1885 transistor BF 509 Q62702-F236 bf245b bf245a transistor BF245 A BF 245 C Q62702-F205
Contextual Info: 2SC D • A23SbOS Q0Q44S7 2 « S I E G T-St-Z^ . N-Channel Junction Field-Effect Transistors BF 245 A BF 245 B o - BF245C SIEMENS AKTIEN6ESELLSCHAF 57 BF 24 5 A, B, and C are N-channel junction field-effect transistors in plastic package similar

Transistors BF 324

Abstract: AM-FM TUNER BF252 UHF "AGC Amplifier" AGC Amplifiers radio diode SR 506 "AGC Amplifier" bf 245 fa 506 bf 233
Contextual Info: CONSUMER TRANSISTORS IF amplifiers @ o o m LU U ai > > and @ ÍD < < O < E I- C3 CL Q_ @ □ a . BF 158 NPN IF a m p lifie r fo r T V BF 160 NPN IF a m p lifie r fo r AM -FM radio 12 12 BF 167 NPN AG C-l F a m p lifie r fo r T V 30 BF 173 NPN IF vision am p-output stage

bf506

Contextual Info: SIEMENS PNP Silicon RF Transistor • BF 506 For VHF mixer and oscillator stages Type Marking Ordering Code BF 506 - Q62702-F534 Pin Co nfiguraltion 1 2 3 B C Package1 E TO-92 Maximum Ratings Parameter Symbol Values Unit Collector-em itter voltage VCEO 35

transistor BF 506

Abstract: TI 506 transistor transistor f 506 BF506 BF 506
Contextual Info: *BF 506 PNP S IL IC O N T R A N S IS T O R , P L A N A R TRAN SISTO R PNP SILIC IU M , PLA N A R H5 Preferred device Dispositif recommandé The BF 506 is intended for use as mixer and oscil­ lator in V H F •T V tuners. L e B F 506 est destiné eux àteges mélangeur et oscilleteur

BF180

Abstract: s21b BF180 TRANSISTOR s parametres s22b bf 180 CE 470 10V J BF180 MAX S21B est 504
Contextual Info: * B F 180 NPN SILICON TRANSISTOR, PLANAR TRANSISTOR NPN S ILIC IU M , PLAN A R % Preferred device D is p o s itif recom m andé The NPN planar transistor BF 180 is intended for use in UHF amplifier stages of T V receivers AGC controlled stages . Le transistor planar NPN BF 180 est destiné à être u ti­

BF606

Abstract: BF254 BF414 BF763 BF255 BF450 BF 414 BF979 to-92 type BF979S
Contextual Info: Transistors — bipolar RF tran sisto rs P la stic p acka g e T O 92 NPN PNP = = N Vceo P Figure Characteristics TA = 25°C Maximum ratings Type lc P.O. tore /cBO V^CEaat ft mA Vce V nA V MHz lc leu* V mA mW BF 199 N 25 25 500 85 (> 38) 7 10 <100 - 550 BF 240

4036

Abstract: 2SA1812 1.4934 BY 143
Contextual Info: SPICE PARAMETER 2SA1812 by ROHM TR Div. * Q2SA1812 PNP BJT model * Date: 2006/12/18 .MODEL Q2SA1812 PNP + IS=550.00E-15 + BF=118.60 + VAF=24.033 + IKF=.4821 + ISE=550.00E-15 + NE=1.4036 + BR=4.8184 + VAR=100 + IKR=1.4934 + ISC=506.15E-12 + NC=1.5119 + NK=.89675

2SA1727

Contextual Info: SPICE PARAMETER 2SA1727 by ROHM TR Div. * Q2SA1727 PNP BJT model * Date: 2006/12/18 .MODEL Q2SA1727 PNP + IS=550.00E-15 + BF=118.60 + VAF=24.033 + IKF=.4821 + ISE=550.00E-15 + NE=1.4036 + BR=4.8184 + VAR=100 + IKR=1.4934 + ISC=506.15E-12 + NC=1.5119 + NK=.89675

2SA1776

Abstract: 2SA1776 spice model 12709
Contextual Info: SPICE PARAMETER 2SA1776 by ROHM TR Div. * Q2SA1776 PNP BJT model * Date: 2006/12/18 .MODEL Q2SA1776 PNP + IS=550.00E-15 + BF=118.60 + VAF=24.033 + IKF=.4821 + ISE=550.00E-15 + NE=1.4036 + BR=4.8184 + VAR=100 + IKR=1.4934 + ISC=506.15E-12 + NC=1.5119 + NK=.89675

BF506

Contextual Info: leiizu ^E.mi-C-ondu.cko'i O^ioaueti, Una. CX !_/ TELEPHONE: (973 376-2922 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. (212)227-6005 BF506 FAX: (973) 376-8960 SILICON PLANAR PNP VHP OSCILLATOR MIXER The BF 506 is a silicon planar epitaxial PNP transistor in Jedec TO-92 plastic package.

rf9.2v3

Abstract: BF50-BF110 G361 RF95 RFN420 BG12 RFA95 RF38 0160 RF200 1000v contactor
Contextual Info: 04_Capitolo_04_GB.qxd 3-03-2009 10:59 Pagina 1 4 MOTOR PAGE 4-4 PAGE 4-6 FOR BG SERIES MINI-CONTACTORS FOR BF SERIES CONTACTORS FOR B SERIES CONTACTORS • Type RF9, phase failure sensitive, manual resetting • Type RFA9, phase failure sensitive, automatic resetting

VOGT n3

Abstract: VOGT N1 50 VOGT 505 VOGT trans VOGT catalogue BU4000 VOGT N1 VOGT N2
Contextual Info: StandardICs 8-bit static shift register BU4021B/BU4021 BF The BU4021B and BU4021BF are 8-bit static shift registers consisting of 8 register cells, each of which has parallel input. Control of the parallel/serial control input P/S enables serial input/serial output with clock synchronization,

transistor BF 506

Abstract: BF 194 transistor BF506 transistor bf 194 transistor bf 193 transistor f 506 9BMS pnp vhf transistor
Contextual Info: BF 506 SILICON PLANAR PNP VH F O SC ILLA T O R M IX E R The B F 506 is a silicon planar epitaxial PN P transistor in Jedec T O -9 2 plastic package. It is intended for use as mixer and oscillator in the V H F range. However, it may also be used as not controlled preamplifier at low noise.

BROWN BOVERI t300

Abstract: t 300-1 tube brown boveri t 130 tube brown boveri T300-1 amplificateur BF amplificateur hf triphase BROWN BOVERI T50-1
Contextual Info: Strahlungsgekühlte Triode Radiation-Cooled Triode Triode refroidie par radiation H auptdaten Q u ick Reference D ata C aractéristiques principales Pa max V a max l a max *P 0 max f max 450 4 550 1580 75 W kV mA W MHz •Klasse C, HF, unmoduliert Class C, BF, unmodulated

00E17

Contextual Info: Standard ICs 8-bit static shift register BU4021B/BU4021BF The B U 4021B and BU4021 BF are 8-b it static shift registers consisting of 8 register cells, each of which has parallel input. Control of the parallel/serial control input P /S e nab les serial input/serial output with clock synchronization,

zq 405-MF

Abstract: siemens 30 090 GP 819 SAA 1006 saa 1070
Contextual Info: BSE D • Ö23b320 QQlb^BO T M S I P NPN Silicon RF Transistor SIEMENS/ SPCLi SEMICONDS T'SI'I? BF P193 • For low-noise, high-gain amplifiers up to 2 GHz. • For linear broadband amplifiers. • ff = 8 GHz. F = 1.2 dB at 800 MHz. ESD: Electrostatic discharge sensitive device, observe handling precautions!

CBC 328

Abstract: 2SC5086FT bf 478
Contextual Info: 2SC5086FT SPICE2G6 model parameters 20010110 NET LIST .SUBCKT 2SC5086F 1 2 3 CB 2 3 LWB 2 5 LWE 4 3 Cpe 4 6 Cpb 5 6 LC 6 1 CC 1 3 CBC 1 2 Q1 6 5 4 + AREA= 1 .MODEL NPN + IS + BF + NF + VAF + IKF + ISE + NE + BR + NR + VAR + IKR + ISC + NC + RB + IRB + RBM

Contextual Info: C88 5E88( 35%/7:0!9@/;0$>:6B ,<DB18897805669395>3I0C,0C9J5 BF F !&010!*0! (# 8/A=01/8/;+=3980:9@/;0<96>=398 %&#$010 !% $0 %2/0 0 0+736B0 900 23120 =/7:/;+=>;/0 :9@/;0 <>:63/<0 :;9?3./<0 >:0 =90 E88(0 380 +8 / /

IEC 384-4

Abstract: PEH506YCD3220M2 transistor Bc 540 BD 140 transistor PEH506 PEH506YCG3330M2 780 AC PEH506Y PEH506VBE3220M2 AD-2
Contextual Info: PEH 506 85°C • • • • • Snap-In Long Life Grade PCB Mounting Low ESR and ESL High ripple current APPLICATION BASIC DESIGN Typical applications for PEH 506 would be SMPS, drives, welding equipment, UPS and other power electronic applications where