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    gl 1117 B

    Abstract: gl 1117 ax gs 1117 ax QM 1117 sn 0716 173300 TA 8644
    Text: HWF1681RA HSXAWAVS High Power GaAs FET Rev.B S eptem bet998 Features • H ig h O u tp u t P ow er PidB=34.5dBm typ. @ 2.4G H z • H ig h G ain • H ig h E fficiency O U T L IN E D R A W IN G Gl= 15dB(typ.)@2.4GHz 1.625(0.065) Tjadd =43%(typ.)@2.4GHz •


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    bet998 HWF1681RA 48dBm F1681R gl 1117 B gl 1117 ax gs 1117 ax QM 1117 sn 0716 173300 TA 8644 PDF