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    BERYLLIUM OXIDE INTERNATIONAL RECTIFIER CDS Search Results

    BERYLLIUM OXIDE INTERNATIONAL RECTIFIER CDS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    BERYLLIUM OXIDE INTERNATIONAL RECTIFIER CDS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRHY9130CM

    Abstract: IRHY93130CM JANSF2N7382 JANSR2N7382 IRHY9130
    Text: Preliminary Data Sheet No. PD-9.1400A IRHY9130CM IRHY93130CM JANSR2N7382 JANSF2N7382 REPETITIVE AVALANCHE AND dv/dt RATED [REF: MIL-PRF-19500/615] P-CHANNEL HEXFET TRANSISTOR RAD HARD Ω , RAD HARD HEXFET -100Volt, 0.30Ω International Rectifier’s P-Channel RAD HARD technology HEXFETs demonstrate virtual immunity to SEE failure. Additionally, under identical pre- and post-radiation


    Original     		PDF IRHY9130CM IRHY93130CM JANSR2N7382 JANSF2N7382 MIL-PRF-19500/615] -100Volt, IRHY9130CM IRHY93130CM JANSF2N7382 JANSR2N7382 IRHY9130

    IRHM9250

    Abstract: IRHM93250
    Text: Provisional Data Sheet No. PD - 9.1299A IRHM9250 IRHM93250 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR P-CHANNEL RAD HARD Ω, RAD HARD HEXFET -200 Volt, 0.315Ω International Rectifier’s P-Channel RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability


    Original     		PDF IRHM9250 IRHM93250 IRHM9250 IRHM93250

    5050 ir led

    Abstract: IRHM57264SE
    Text: PD-93798B RADIATION HARDENED POWER MOSFET THRU-HOLE TO-254AA IRHM57264SE 250V, N-CHANNEL 5 TECHNOLOGY ™ Product Summary Part Number Radiation Level IRHM57264SE 100K Rads (Si) RDS(on) 0.066Ω ID 35A* TO-254 International Rectifier’s R5TM technology provides


    Original     		PDF PD-93798B O-254AA) IRHM57264SE IRHM57264SE O-254 O-254AA. MIL-PRF-19500 5050 ir led

    MIL-PRF-19500/685

    Abstract: PD-95871 JANSR2N7477T1 IRHMS57264SE IRHMS57264
    Text: PD-95871 RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-254AA IRHMS57264SE JANSR2N7477T1 250V, N-CHANNEL REF: MIL-PRF-19500/685 5 TECHNOLOGY ™ Product Summary Part Number IRHMS57264SE Radiation Level 100K Rads (Si) RDS(on) 0.061Ω ID QPL Part Number


    Original     		PDF PD-95871 O-254AA) IRHMS57264SE JANSR2N7477T1 MIL-PRF-19500/685 O-254AA O-254AA. MIL-PRF-19500 MIL-PRF-19500/685 PD-95871 JANSR2N7477T1 IRHMS57264SE IRHMS57264

    Untitled

    Abstract: No abstract text available
    Text: PD-95871 RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-254AA IRHMS57264SE JANSR2N7477T1 250V, N-CHANNEL REF: MIL-PRF-19500/685 5 TECHNOLOGY ™ Product Summary Part Number IRHMS57264SE Radiation Level 100K Rads (Si) RDS(on) 0.061Ω ID QPL Part Number


    Original     		PDF PD-95871 O-254AA) IRHMS57264SE JANSR2N7477T1 MIL-PRF-19500/685 O-254AA O-254AA. MIL-PRF-19500

    Untitled

    Abstract: No abstract text available
    Text: PD-96916 RADIATION HARDENED POWER MOSFET SURFACE MOUNT TO-254AA Tabless IRHMJ57160 100V, N-CHANNEL 5 TECHNOLOGY ™ Product Summary Part Number Radiation Level IRHMJ57160 100K Rads (Si) RDS(on) 0.018Ω ID 35A* IRHMJ53160 300K Rads (Si) 0.018Ω 35A* IRHMJ54160


    Original     		PDF PD-96916 O-254AA IRHMJ57160 IRHMJ57160 IRHMJ53160 IRHMJ54160 IRHMJ58160 1000K MIL-PRF-19500

    IRHMJ53160

    Abstract: IRHMJ54160 IRHMJ57160 IRHMJ58160
    Text: PD-96916 RADIATION HARDENED POWER MOSFET SURFACE MOUNT TO-254AA Tabless IRHMJ57160 100V, N-CHANNEL 5 TECHNOLOGY ™ Product Summary Part Number Radiation Level IRHMJ57160 100K Rads (Si) RDS(on) 0.018Ω ID 35A* IRHMJ53160 300K Rads (Si) 0.018Ω 35A* IRHMJ54160


    Original     		PDF PD-96916 O-254AA IRHMJ57160 IRHMJ57160 IRHMJ53160 IRHMJ54160 IRHMJ58160 1000K MIL-PRF-19500 IRHMJ53160 IRHMJ54160

    IRHMK57260SE

    Abstract: No abstract text available
    Text: PD-96915 RADIATION HARDENED IRHMK57260SE POWER MOSFET 200V, N-CHANNEL SURFACE MOUNT Low-Ohmic TO-254AA 5 TECHNOLOGY ™ Product Summary Part Number IRHMK57260SE Radiation Level RDS(on) 100K Rads (Si) 0.044Ω ID 45A Low-Ohmic TO-254AA Tabless International Rectifier’s R5 TM technology provides


    Original     		PDF PD-96915 IRHMK57260SE O-254AA) O-254AA MIL-PRF-19500 IRHMK57260SE

    Untitled

    Abstract: No abstract text available
    Text: PD-93798B RADIATION HARDENED POWER MOSFET THRU-HOLE TO-254AA IRHM57264SE 250V, N-CHANNEL 5 TECHNOLOGY ™ Product Summary Part Number Radiation Level IRHM57264SE 100K Rads (Si) RDS(on) 0.066Ω ID 35A* TO-254 International Rectifier’s R5TM technology provides


    Original     		PDF PD-93798B O-254AA) IRHM57264SE IRHM57264SE O-254 O-254AA. MIL-PRF-19500

    Untitled

    Abstract: No abstract text available
    Text: PD-96915 RADIATION HARDENED IRHMK57260SE POWER MOSFET 200V, N-CHANNEL SURFACE MOUNT Low-Ohmic TO-254AA 5 TECHNOLOGY ™ Product Summary Part Number IRHMK57260SE Radiation Level RDS(on) 100K Rads (Si) 0.044Ω ID 45A Low-Ohmic TO-254AA Tabless International Rectifier’s R5 TM technology provides


    Original     		PDF PD-96915 IRHMK57260SE O-254AA) O-254AA MIL-PRF-19500

    Untitled

    Abstract: No abstract text available
    Text: PD-91224E RADIATION HARDENED POWER MOSFET THRU-HOLE TO-254AA IRHM7360SE JANSR2N7391 400V, N-CHANNEL REF:MIL-PRF-19500/661 RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHM7360SE Radiation Level RDS(on) 100K Rads (Si) 0.20Ω ID QPL Part Number


    Original     		PDF PD-91224E O-254AA) IRHM7360SE JANSR2N7391 MIL-PRF-19500/661 O-254AA applicatio54AA. MIL-PRF-19500

    Untitled

    Abstract: No abstract text available
    Text: PD-96971 RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-254AA IRHMB57260SE 200V, N-CHANNEL 5 TECHNOLOGY ™ Product Summary Part Number IRHMB57260SE Radiation Level RDS(on) 100K Rads (Si) 0.044Ω ID 45A Low-Ohmic TO-254AA International Rectifier’s R5 TM technology provides


    Original     		PDF PD-96971 O-254AA) IRHMB57260SE O-254AA O-254AA. MIL-PRF-19500

    Untitled

    Abstract: No abstract text available
    Text: PD-94605A RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-254AA IRHMS597260 200V, P-CHANNEL 5 TECHNOLOGY ™ Product Summary Part Number Radiation Level IRHMS597260 100K Rads (Si) IRHMS593260 300K Rads (Si) RDS(on) 0.103Ω 0.103Ω ID -32A -32A International Rectifier’s R5TM technology provides


    Original     		PDF PD-94605A O-254AA) IRHMS597260 IRHMS593260 O-254AA O-254AA. MIL-PRF-19500

    Untitled

    Abstract: No abstract text available
    Text: PD-94605B RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-254AA IRHMS597260 200V, P-CHANNEL 5 TECHNOLOGY ™ Product Summary Part Number Radiation Level IRHMS597260 100K Rads (Si) IRHMS593260 300K Rads (Si) RDS(on) 0.103Ω 0.103Ω ID -30A -30A Low-Ohmic


    Original     		PDF PD-94605B O-254AA) IRHMS597260 IRHMS597260 IRHMS593260 O-254AA O-254AA. MIL-PRF-19500

    JANSR2N7476T1

    Abstract: No abstract text available
    Text: PD - 94765 RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-254AA IRHMS57260SE JANSR2N7476T1 200V, N-CHANNEL REF: MIL-PRF-19500/685 5 TECHNOLOGY ™ Product Summary Part Number IRHMS57260SE Radiation Level 100K Rads (Si) RDS(on) 0.044Ω ID QPL Part Number


    Original     		PDF O-254AA) IRHMS57260SE JANSR2N7476T1 MIL-PRF-19500/685 O-254AA O-254AA. MIL-PRF-19500 JANSR2N7476T1

    Untitled

    Abstract: No abstract text available
    Text: PD-91299E IRHM9250 JANSR2N7423 200V, P-CHANNEL REF: MIL-PRF-19500/662 RADIATION HARDENED POWER MOSFET THRU-HOLE T0-254AA RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number IRHM9250 IRHM93250 Radiation Level 100K Rads (Si) 300K Rads (Si) RDS(on)


    Original     		PDF PD-91299E IRHM9250 JANSR2N7423 MIL-PRF-19500/662 T0-254AA) IRHM93250 JANSF2N7423 reduces54AA.

    Untitled

    Abstract: No abstract text available
    Text: PD-94605D RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-254AA IRHMS597260 200V, P-CHANNEL 5 ™ TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D IRHMS597260 100K Rads (Si) 0.103Ω -30A IRHMS593260 300K Rads (Si) 0.103Ω -30A


    Original     		PDF PD-94605D O-254AA) IRHMS597260 IRHMS597260 IRHMS593260 O-254AA O-254AA. MIL-PRF-19500

    IRHMB57260SE

    Abstract: No abstract text available
    Text: PD-96971 RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-254AA IRHMB57260SE 200V, N-CHANNEL 5 TECHNOLOGY ™ Product Summary Part Number IRHMB57260SE Radiation Level RDS(on) 100K Rads (Si) 0.044Ω ID 45A Low-Ohmic TO-254AA International Rectifier’s R5 TM technology provides


    Original     		PDF PD-96971 O-254AA) IRHMB57260SE O-254AA O-254AA. MIL-PRF-19500 IRHMB57260SE

    IRHMK593160

    Abstract: IRHMK597160
    Text: PD-96912 RADIATION HARDENED IRHMK597160 POWER MOSFET 100V, N-CHANNEL SURFACE MOUNT Low-Ohmic TO-254AA 5 TECHNOLOGY ™ Product Summary Part Number Radiation Level RDS(on) IRHMK597160 100K Rads (Si) 0.05Ω IRHMK593160 300K Rads (Si) 0.05Ω ID -45A* -45A*


    Original     		PDF PD-96912 IRHMK597160 O-254AA) IRHMK597160 IRHMK593160 O-254AA MIL-PRF-19500

    Untitled

    Abstract: No abstract text available
    Text: PD-94605E RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-254AA IRHMS597260 200V, P-CHANNEL 5 ™ TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D IRHMS597260 100K Rads (Si) 0.103Ω -30A IRHMS593260 300K Rads (Si) 0.103Ω -30A


    Original     		PDF PD-94605E O-254AA) IRHMS597260 IRHMS597260 IRHMS593260 O-254AA O-254AA. MIL-PRF-19500

    12V 30A diode

    Abstract: AS025
    Text: PD-94605C RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-254AA IRHMS597260 200V, P-CHANNEL 5 TECHNOLOGY ™ Product Summary Part Number Radiation Level RDS(on) IRHMS597260 100K Rads (Si) 0.103Ω IRHMS593260 300K Rads (Si) 0.103Ω ID -30A -30A International Rectifier’s R5TM technology provides


    Original     		PDF PD-94605C O-254AA) IRHMS597260 IRHMS593260 O-254AA O-254AA. MIL-PRF-19500 12V 30A diode AS025

    12v 30A regulator

    Abstract: 365A pin CURRENT REGULATOR 12V 30A vg 96912a IRHMK593160 IRHMK597160
    Text: PD-96912A RADIATION HARDENED IRHMK597160 POWER MOSFET 100V, P-CHANNEL TECHNOLOGY SURFACE MOUNT Low-Ohmic TO-254AA ’™ Product Summary Part Number Radiation Level RDS(on) IRHMK597160 100K Rads (Si) 0.05Ω IRHMK593160 300K Rads (Si) 0.05Ω ID -45A* -45A*


    Original     		PDF PD-96912A IRHMK597160 O-254AA) IRHMK597160 IRHMK593160 O-254AA MIL-PRF-19500 12v 30A regulator 365A pin CURRENT REGULATOR 12V 30A vg 96912a

    Untitled

    Abstract: No abstract text available
    Text: Provisional Data Sheet No. PD - 9.1393C International IGR Rectifier IRHM7264SE R E P E T IT IV E A V A LA N C H E A N D d v / d t R A T E D HEXFET TRANSISTOR N -C H A N N E L S IN G L E E V E N T E F F E C T S E E R A D H A R D 250Volt, 0.11Q, (SEE) RAD HARD HEXFET


    OCR Scan     		PDF 1393C IRHM7264SE 250Volt, 4SS54S2

    Untitled

    Abstract: No abstract text available
    Text: Provisional Data Sheet No. PD - 9.1299A International I R Rectifier IRHM9250 IRHM93250 R E P E T I T I V E A V A L A N C H E A N D d v /d t R A T E D HEXFET TRANSISTOR P -C H A N N E L RAD HARD -200 Volt, 0.315ft, RAD HARD HEXFET International Rectifier’s P-Channel RAD HARD technology


    OCR Scan     		PDF IRHM9250 IRHM93250 315ft,