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    BEL 188 TRANSISTOR Search Results

    BEL 188 TRANSISTOR Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    BEL 188 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    lt 4257

    Abstract: C5750X7R2A225KT CTX02-15242 bel 188 transistor diode bridge LT 402 LTC4255 LTC4257 LTC4257CS8 SMAJ58A fuse Tyco
    Text: Electrical Specifications Subject to Change LTC4257 IEEE 802.3af PD Power-Over-Ethernet Interface Controller U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO The LTC 4257 provides complete signature and power interface functions for a device operating in an IEEE


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    PDF LTC4257 LTC4257 Interfac00V LTC4255 4257f lt 4257 C5750X7R2A225KT CTX02-15242 bel 188 transistor diode bridge LT 402 LTC4255 LTC4257CS8 SMAJ58A fuse Tyco

    CTX02-15242

    Abstract: BAS21H LQLB DF01SA LTC4257 LTC4257CS8 SMAJ58A CTX-02-15242 lt 4257 bel T1A
    Text: LTC4257 IEEE 802.3af PD Power Over Ethernet Interface Controller U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO Complete Power Interface Port for IEEE 802.3af Powered Devices PDs Onboard 100V, 400mA Power MOSFET Precision Inrush Current Limit


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    PDF LTC4257 400mA LTC4257 LTC4255 4257f CTX02-15242 BAS21H LQLB DF01SA LTC4257CS8 SMAJ58A CTX-02-15242 lt 4257 bel T1A

    lt4257

    Abstract: No abstract text available
    Text: LTC4257 IEEE 802.3af PD Power over Ethernet Interface Controller FEATURES • ■ ■ ■ ■ ■ ■ ■ U ■ DESCRIPTIO Complete Power Interface Port for IEEE 802.3af Powered Devices PDs Onboard 100V, 400mA Power MOSFET Precision Input Current Limit


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    PDF LTC4257 400mA 16-Pin 4257fb lt4257

    LT4257

    Abstract: BEL 188 TRANSISTOR PIN CONFIGURATION bel 188 transistor 2N7002 MARKING br1 BRIDGE lt 4257 LTC1737 PIN DIAGRAM on pad for RJ45 1205 SO8 marking D3B
    Text: LTC4257 IEEE 802.3af PD Power over Ethernet Interface Controller U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO Complete Power Interface Port for IEEE 802.3af Powered Devices PDs Onboard 100V, 400mA Power MOSFET Precision Input Current Limit


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    PDF LTC4257 400mA 16-Pin 4257fb LT4257 BEL 188 TRANSISTOR PIN CONFIGURATION bel 188 transistor 2N7002 MARKING br1 BRIDGE lt 4257 LTC1737 PIN DIAGRAM on pad for RJ45 1205 SO8 marking D3B

    bel 188 transistor

    Abstract: tyco transformer DF01SA LTC4257 LTC4257CS8 SMAJ58A lt 4257 H2019 BEL 188 TRANSISTOR PIN CONFIGURATION PB2134
    Text: LTC4257 IEEE 802.3af PD Power over Ethernet Interface Controller U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO Complete Power Interface Port for IEEE 802.3af Powered Devices PDs Onboard 100V, 400mA Power MOSFET Precision Input Current Limit


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    PDF LTC4257 400mA LTC4257 4257fa bel 188 transistor tyco transformer DF01SA LTC4257CS8 SMAJ58A lt 4257 H2019 BEL 188 TRANSISTOR PIN CONFIGURATION PB2134

    nokia mobile jumper setting

    Abstract: star delta wiring diagram Allen-Bradley micrologix cable pin Allen Bradley PLC micrologix 1200 Allen-Bradley 1756 DIGITAL INPUT cards Allen Bradley PLC micrologix 1200 wiring diagram power and battery cabinet ericsson delta plc cable pin diagram RS-485 nokia 1200 circuit diagram Allen-Bradley micrologix 1200
    Text: SNAP PAC SYSTEM SPECIFICATION GUIDE Form 1696-101018—October 2010 43044 Business Park Drive • Temecula • CA 92590-3614 Phone: 800-321-OPTO 6786 or 951-695-3000 Fax: 800-832-OPTO (6786) or 951-695-2712 www.opto22.com Product Support Services 800-TEK-OPTO (835-6786) or 951-695-3080


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    PDF 1696-101018--October 800-321-OPTO 800-832-OPTO opto22 800-TEK-OPTO nokia mobile jumper setting star delta wiring diagram Allen-Bradley micrologix cable pin Allen Bradley PLC micrologix 1200 Allen-Bradley 1756 DIGITAL INPUT cards Allen Bradley PLC micrologix 1200 wiring diagram power and battery cabinet ericsson delta plc cable pin diagram RS-485 nokia 1200 circuit diagram Allen-Bradley micrologix 1200

    503 10 010 00 vogt

    Abstract: VOGT 503 05 001 00 503 05 501 40 vogt vogt 503 05 501 40 vogt 503 10 010 00 vogt transformer s3 vogt t2 505 04 VOGT 503 05 010 30 503 20 010 10 vogt smd transistor r4D
    Text: Cologne Chip HFC - S mini ISDN HDLC FIFO controller with S/T interface and integrated FIFOs Data Sheet March 2006 Cologne Chip HFC-S mini Revision History Date Remarks March 2006 The consolidation begun with the previous data sheet revision attains its conclusion with this


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    vogt b3 transformer

    Abstract: 503 20 010 10 vogt transistor SMD R4d
    Text: Cologne Chip HFC - S mini ISDN HDLC FIFO controller with S/T interface and integrated FIFOs Data Sheet March 2006 Cologne Chip HFC-S mini Revision History Date Remarks March 2006 The consolidation begun with the previous data sheet revision attains its conclusion with this


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    PDF Sect29 vogt b3 transformer 503 20 010 10 vogt transistor SMD R4d

    XD 105 94V-0

    Abstract: BFM 41A Zener diode smd marking code 39c transistor 1BW GENERAL SEMICONDUCTOR TVS CJ 53B 30 097 transistor 110 3CG
    Text: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book transient voltage suppressors vishay general semiconductor vse-db0002-1102 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents


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    PDF vse-db0002-1102 XD 105 94V-0 BFM 41A Zener diode smd marking code 39c transistor 1BW GENERAL SEMICONDUCTOR TVS CJ 53B 30 097 transistor 110 3CG

    TRANSISTOR SMD MARKING CODE 1BW

    Abstract: SmD TRANSISTOR 1bw transistor SMD 5BW TRANSISTOR SMD MARKING CODE 1AM 5bw smd smd code marking 5bw KL SN 102 94v-0 smd transistor marking 3bw smd transistor 1AM yx 801
    Text: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book transient voltage suppressors vishay general semiconductor vse-db0002-0710 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents


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    PDF vse-db0002-0710 TRANSISTOR SMD MARKING CODE 1BW SmD TRANSISTOR 1bw transistor SMD 5BW TRANSISTOR SMD MARKING CODE 1AM 5bw smd smd code marking 5bw KL SN 102 94v-0 smd transistor marking 3bw smd transistor 1AM yx 801

    philips ecg master replacement guide

    Abstract: ecg semiconductors master replacement guide ECG transistor replacement guide book free philips ecg semiconductors master replacement guide oz 8602 gn AC digital voltmeter using 7107 smd glass zener diode color codes cd 1619 CP fm radio russian transistor cross-reference yd 7377
    Text: Chapter 7 Component Data and References Component Data None of us has the time or space to collect all the literature available on the many different commercially available manufactured components. Even if we did, the task of keeping track of new and obsolete


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    ECG transistor replacement guide book free

    Abstract: philips ecg master replacement guide one chip tv ic 8873 ecg semiconductors master replacement guide philips ecg semiconductors master replacement guide cd 1619 CP fm radio smd transistor 5AW replacement of bel 187 transistor ecg philips semiconductor master book SUBSTITUTE FOR A bel 187 transistor
    Text: Chapter 7 Component Data and References Component Data None of us has the time or space to collect all the literature available on the many different commercially available manufactured components. Even if we did, the task of keeping track of new and obsolete


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    chn 429

    Abstract: MMC 4067 E UM10503
    Text: UM10503 LPC43xx ARM Cortex-M4/M0 multi-core microcontroller Rev. 1.7 — 17 October 2013 User manual Document information Info Content Keywords LPC43xx, LPC4300, LPC4370, LPC4350, LPC4330, LPC4320, LPC4310, LPC4357, LPC4353, LPC4337, LPC4333, LPC4327, LPC4325, LPC4323,


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    PDF UM10503 LPC43xx LPC43xx, LPC4300, LPC4370, LPC4350, LPC4330, LPC4320, LPC4310, LPC4357, chn 429 MMC 4067 E UM10503

    LF9203

    Abstract: TG1G lem crossovers AKS Ti 78 DP83861 SLA 4051 ely transformers VCC1-B2B-125M000 VCC1-B2B-25M000 DP83820
    Text: Oct 2009 DP83861VQM-3 EN Gig PHYTER 10/100/1000 Ethernet Physical Layer General Description Features The DP83861 is a full featured Physical Layer transceiver • 100BASE-TX and 1000BASE-T compliant with in tegrated PMD sublayers to su pport 1 0BASE-T, ■ Fully compliant to IEEE 802.3u 100BASE-TX and IEEE


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    PDF DP83861VQM-3 DP83861 100BASE-TX 1000BASE-T 10BASE-T LF9203 TG1G lem crossovers AKS Ti 78 SLA 4051 ely transformers VCC1-B2B-125M000 VCC1-B2B-25M000 DP83820

    BEL 100N TRANSISTOR

    Abstract: bel 187 transistor PN3904 bel 188 transistor bel 187 transistor npn bel 187 BEL 100N bel 187 NPN TRANSISTOR bel 188 transistor pnp TRANSISTOR BC 187
    Text: VCE Si Device No VCEO VCBO Volts min V otts mm V eb o Volts min hFE at bias mm /max. Ic mA VcE V o lts 1 CM mA max P lo t mW max ICBO mA typ S at V otts typ pF typ ts ns typ N f <j B typ — — — TO 237 — — — TO 92 250 — — — TO 92 130 —


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    PDF 27min. 37min. 35friin. 50min 50min. 40min 40min. BEL 100N TRANSISTOR bel 187 transistor PN3904 bel 188 transistor bel 187 transistor npn bel 187 BEL 100N bel 187 NPN TRANSISTOR bel 188 transistor pnp TRANSISTOR BC 187

    BEL 100N TRANSISTOR

    Abstract: bel 187 transistor BEL 100p transistor bel 187 NPN TRANSISTOR transistor BEL 187 transistor bf 198 bel 188 transistor bel 100n transistor npn bel 188 transistor pnp BEL187
    Text: VCE Si Device No VCEO VCBO Volts min V otts mm V eb o Volts mm hFE at bias mm ^max. le mA VcE V o lts 1 CM mA max P lo t mW max ICBO mA typ S at V otts typ pF typ ts ns typ N f <j B typ — — — TO 237 — — — TO 92 250 — — — TO 92 130 — —


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    PDF 27min. 37min. 35friin. 50min 50min. 40min 40min. BEL 100N TRANSISTOR bel 187 transistor BEL 100p transistor bel 187 NPN TRANSISTOR transistor BEL 187 transistor bf 198 bel 188 transistor bel 100n transistor npn bel 188 transistor pnp BEL187

    BY236

    Abstract: BY235 d25n12 PBY285 KD202A D237A D223B diode drr204 Diode D25N4 PBY267
    Text: a m a t e u m Lars Grallert Diodenvergleichsliste p e U ie 247 electrónica •Band 247 LA R S G R A L L E R T Diodenvergleichsliste M ILITÄ R V E R L A G D ER D EU TSCH EN D EM OKRATISCH EN R EP U B L IK G r a lle r t, L . : D io d e n v e rg le ic h s liste . B e r lin : M ilitä rv e rla g d e r D D R V E B , 1 9 9 0 . 112 S ., 127 B ild e r - ( e le c tr ó n ic a 2 4 7 )


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    gc 301

    Abstract: selen-gleichrichter GAZ17 GY125 GD244 VEB M ik ro e le k tro n ik 04A657 ITT transistoren ga106 selen
    Text: Erläuterung der Kurzzeichen von Halbleiterbauelem enten Transistoren B b C 1 15 C 22 b C 1h 2 i ä f h2 1o fT f F 1121 o | Il I2Tj| I E> Im o 11 • i>; o le n s IrKV Io Ic I K Bo In I d l^tot B ung Basisschaltung, Basis E in g an g sk ap azität MOS -FE T )


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    Untitled

    Abstract: No abstract text available
    Text: Æ ic te ! RadTolerant Field Programmable Gate Arrays - m Features • Programming Technology Prevents Reverse Engineering and Design Theft General Characteristics • • TestedTotal Ionizing Dose TID Survivability Level • Packages: 132-Pin, 172-Pin, 196-Pin, and 256-Pin Ceramic


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    PDF 132-Pin, 172-Pin, 196-Pin, 256-Pin CQ172 CQ196 CQ256 CCS08and CQ256,

    Untitled

    Abstract: No abstract text available
    Text: RadTolerant Field Programmable Gate Arrays Features • Programming Technology Prevents Reverse Engineering and Design Theft General Characteristics • • TestedTotal Ionizing Dose TID Survivability Level • Packages: 132-Pin, 172-Pin, 196-Pin, and 256-Pin Ceramic


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    PDF 132-Pin, 172-Pin, 196-Pin, 256-Pin CQ256,

    information applikation

    Abstract: "Mikroelektronik" Heft mikroelektronik Heft CDB4151 mikroelektronik Heft 12 MH8475 MH7442 Mikroelektronik Information Applikation information applikation mikroelektronik CDB4153
    Text: ' 1 o lE h f c p o n ih Information Applikation s o c h a lH ü n o n il- c Information Applikation HEFT 25 I M P O R T - I S T E IL 1 Ivob Halbleiterwerk frankfurt/ader | b e trie b im m b kom binat m ikroelektronik ] KAMMER DER TECH N IK I Bezirksvorstand Frankfurt/O.


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    transistor D883

    Abstract: CQFP 172 PIN vr 201 act 1014 5962-9550801MYA A1020BL mya 111
    Text: HiRel FPG A s Features 3 2 0 0 DX • Highly Predictable Performance with 100 Percent • 100 MHz System Logic Integration Automatic Placement and Routing • Highest Speed FPGA SFIAM, up to 2.5 Kbits Configurable Dual-Port SFIAM • Device Sizes from 1200 to 20,000 gates


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    PDF CQ208 CQ256 CCS08and CQ256, transistor D883 CQFP 172 PIN vr 201 act 1014 5962-9550801MYA A1020BL mya 111

    MP21E

    Abstract: sowjetische transistoren MP21D UdSSR KT904 ASZ16 KT315 OC1072 Transistoren DDR asz1015
    Text: electronic Sowjetische Transistoren I n h a l t s v e r z e i c h n i s V o rw o rt K u rz c h a ra lc te rls tlk - G e rm a n iu n tra n s is to re n - S illz lu m tra n s ito re n S t a a t l i c h e r S ta n d a r d d e s S y ste m s f ü r d i e B e z e ic h n u n g d e r H a l b l e i t e r b a u e l e u e n t e d e r UdSSR


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    Untitled

    Abstract: No abstract text available
    Text: Æ ic te ! RadTolerant RAD-PAK Field Programmable Gate Arrays - m Features Radiation • • Characteristics RAD-PAK® Package Technology from Space Electronics, Inc. Improved Total Ionizing Dose TID Survivability - Can Im prove TI D 2-10x Over Standard Package


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    PDF CQ172