TRANSISTOR 187
Abstract: transistor b 1655 transistor on 4673 D 1062 transistor on BE 187 TRANSISTOR BE 187 TRANSISTOR ON 4673 187 transistor configuration+bel+187+transistor TRANSISTOR d 718
Text: TRANSISTOR MICA INSULATORS ke ye lco .com • RAPID HEAT DISSIPATION • HIGH DIELECTRIC STRENGTH • NON-TOXIC • LOW COST • FROM STOCK These precision stamped mica insulators provide good thermal conductivity .009 watts per square inch per degree celsius per inch in
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Untitled
Abstract: No abstract text available
Text: M60 Section 6 FREV2 11/23/11 12:09 PM Page 110 SOCKETS FOR T0-5 & TO-100 “MINI” HALOGEN LAMP SOCKETS Fully molded compact construction. Speeds transistor assembly. Incorporates ultra high quality, closed entry, sleeve type contacts. Accepts .016 .41 to .020 (.51) diameter
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O-100
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transistor p86
Abstract: No abstract text available
Text: M55 Sect 6 p86-103 m 10/13/06 7:27 PM Page 101 SOCKETS FOR T0-5 & TO-100 “MINI” HALOGEN LAMP SOCKETS Fully molded compact construction. Speeds transistor assembly. Incorporates ultra high quality, closed entry, sleeve type contacts. Accepts .016 .41 to .020 (.51) diameter leads or .010 (.25) x
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p86-103
O-100
O-100
transistor p86
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CIL TRANSISTOR 188
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS CIL 187 TO-92 Plastic Package Intended For Low Voltage , High Current Output Pair Application Complementary CIL 188 ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise
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C-120
CIL187
Rev060901
CIL TRANSISTOR 188
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CIL TRANSISTOR 188
Abstract: CIL TRANSISTOR 187 CIL TRANSISTOR 331 CIL187 CIL188
Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR EPITAXIAL TRANSISTORS CIL 187 TO-92 Plastic Package Intended For Low Voltage , High Current Output Pair Application Complementary CIL 188
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C-120
CIL187
Rev060901
CIL TRANSISTOR 188
CIL TRANSISTOR 187
CIL TRANSISTOR 331
CIL188
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CIL TRANSISTOR 188
Abstract: CIL TRANSISTOR 187 CIL188 CIL TRANSISTOR 331 CIL187 CIL TRANSISTOR CIL 331 transistor a 92 a 331
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS CIL 187 TO-92 Plastic Package Intended For Low Voltage , High Current Output Pair Application Complementary CIL 188 ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise
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C-120
CIL187
Rev060901
CIL TRANSISTOR 188
CIL TRANSISTOR 187
CIL188
CIL TRANSISTOR 331
CIL TRANSISTOR
CIL 331
transistor a 92 a 331
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NEC JAPAN 282 110 01
Abstract: NEC 2561 TYP 513 309 2SC4570 2SC4570-T1 2SC4570-T2 date sheet ic 7483 marking 929 922 nec 5261
Text: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC4570 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC4570 is a low supply voltage transistor designed for UHF OSC/MIX. 2.1±0.1 It is suitable for a high density surface mount assembly since the
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2SC4570
2SC4570
SC-70)
2SC4570-T1
NEC JAPAN 282 110 01
NEC 2561
TYP 513 309
2SC4570-T1
2SC4570-T2
date sheet ic 7483
marking 929 922
nec 5261
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ic 7483 pin configuration
Abstract: T 427 transistor TYP 513 309 2SC4570 ts 1683 nec 5261
Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR µPA803T NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD µPA803T has built-in 2 transistors which were developed for UHF. PACKAGE DRAWINGS (Unit: mm) FEATURES 2.1±0.1 • High fT 1.25±0.1 6
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PA803T
PA803T
PA803T-T1
2SC4570)
ic 7483 pin configuration
T 427 transistor
TYP 513 309
2SC4570
ts 1683
nec 5261
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MM54C32
Abstract: No abstract text available
Text: MICROCIRCUIT DATA SHEET Original Creation Date: 10/19/95 Last Update Date: 05/19/97 Last Major Revision Date: 04/02/97 MNMM54C32-X REV 1A0 QUAD 2-INPUT OR GATE General Description Employing complementary MOS CMOS transistors to achieve low power and high noise margin,
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MNMM54C32-X
MM54C32
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BUK7628-100A
Abstract: BUK7528-100A
Text: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope available in TO220AB and SOT404 . Using ’trench’ technology which
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O220AB
OT404
BUK7528-100A
BUK7628-100A
O220AB
BUK7628-100A
BUK7528-100A
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8060 transistor
Abstract: 104 csk 8060-1G6 M8058-1G18 8060-1G12 1G22 d 317 transistor transistor 373 transistor c 373 1g45
Text: Data downloaded from http://www.anglia.com - the website of Anglia - tel: 01945 474747 Catalogue 1654741 Specialty Sockets Revised 1-04 Transistor Sockets 8058 & 8060 Series 8060-1G11 8060-1G6 FEATURES: PERFORMANCE SPECIFICATIONS: The 8058/8060 family of teflon sockets, with beryllium copper contacts,
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8060-1G11
8060-1G6
MIL-S-83502/2
MIL-S-83502/5.
8060 transistor
104 csk
8060-1G6
M8058-1G18
8060-1G12
1G22
d 317 transistor
transistor 373
transistor c 373
1g45
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DG180-191
Abstract: No abstract text available
Text: DG180-191 fffl HARRIS S E M I C O N D U C T O R High-Speed Driver With JFET Switch GENERAL DESCRIPTION FEATURES The DG180 thru DG191 series of analog gates consist of 2 or 4 N-channel junction-type field-effect transistors JFET designed to function as electronic switches. Level-shifting
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DG180-191
DG182,
150ns
10MHz
DG180
DG191
DG186/187/188
DG189/190/191
DG189/190/191
DG180-191
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Untitled
Abstract: No abstract text available
Text: TRANSISTOR M ICA INSULATORS • RAPID HEAT DISSIPATION • HIGH DIELECTRIC STRENGTH • NON-TOXIC • LOW COST • FROM STOCK These precision stamped mica insulators provide good thermal conductivity .009 watts per square inch per degree Celsius per inch in
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TRANSISTOR 187
Abstract: No abstract text available
Text: TRANSISTOR M ICA INSULATORS • RAPID HEAT DISSIPATION • HIGH DIELECTRIC STRENGTH • NON-TOXIC • LOW COST • FROM STOCK These precision stamped mica insulators provide good thermal conductivity .009 watts per square inch per degree Celsius per inch in
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H28iH
TRANSISTOR 187
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G-184
Abstract: No abstract text available
Text: S E M I C O N D U C T O R High-Speed Driver With JFET Switch GENERAL DESCRIPTION FEATURES The D G 180 thru D G 191 series o f analog gates co nsist of 2 or 4 N -channel junction-type fie ld -e ffe ct transistors JFET designed to function as ele ctro n ic sw itches. Level-shifting
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150ns,
10-PIN
14-PIN
DG186/187/188
DG189/190/191
G-184
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Untitled
Abstract: No abstract text available
Text: Low Saturation Voltage Switching Transistors LSV series E -p a c k IT O -2 2 0 S M D B ip o la r tra n s is to rs A b s o lu te M a x im u m R a tin g s E le c tric a l C h a ra c te ris tic s VcEO Pt Tstg Tj [°C ] PC] flFE (s u s ) V cE V be (s a t) (s a t)
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2SA1795
2SA1876
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Transistor AC 187
Abstract: AC187K ac187 AC 187 npn transistor TO 1 ac188k Transistor AC 187 k valvo valvo transistor valvo germanium valvo transistoren
Text: NICHT FÜR N E U E N T W I C K L U N G E N AC 187 K GERMANIUM - NPN - NF - TRANSISTOR für Endstufen, in Verbindung mit AC 188 K als komplementäres Paar Mechanische D a t e n : GehKuse: Metall JEDEC TO-1 bzw. 1 A 3 nach DIN 41 871 in Kdhlklotz Alle Elektroden sind
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a 4x transistor
Abstract: IGBT modul
Text: SENSITRON SEMICONDUCTOR 1998 • SHORT FORM CATALOG SCP-3511 HALF-BRIDGE IGBT MODUL • • • • HIGHCURENT HIGH RELIABILITY LOW THERMAL RESISTANCE HIGH SURGE CURRENT N-CHANNEL, HALF-BRIDGE INSULATED GATE BIPOLAR TRANSISTOR IGBT ENCLOSED IN HERMETIC PACKAGE.
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SCP-3511
a 4x transistor
IGBT modul
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RU 7511
Abstract: circuit diagram for je 182 g
Text: DG180-191 HARRIS !Z * c ° "r.;.0.,! High-Speed Driver With JFET Switch GENERAL DESCRIPTION FEATURES The OG1SO thru DG191 series of analog gates consist of 2 or 4 N-channel junction-type field-effect transistors JFET designed to function as electronic switches. Level-shifting
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DG180-191
DG182,
150ns,
10MHz
10-PIN
14-PIN
DG191
DPST-DG183/184/185
SPDT-DG186/187/188
DG186/187/188
RU 7511
circuit diagram for je 182 g
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Untitled
Abstract: No abstract text available
Text: Power Transistor Sockets Heavy duty, fully insulated transistor sockets, TO-3 style, are molded of UL approved glass filled polyester and can be supplied with printed circuit or panel mount saddles. Spring brass or phosphor bronze contacts are available with brite tin, electro tin or gold plating. Molded bosses in casting eliminate the need for
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WA919
WA920
WA925
WA917
WA918
WA923
WA962
WA973
WA939
-WA940
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55D8
Abstract: circuit diagram for je 182 g DG181 DG180 DG180-191 DG182 DG183 DG184 DG185 DG186
Text: Intersil Hlgh-Rellabllity Products DG180-191 U High Reltfnnfy High-Speed Driver qV ^ With JFET Switch GENERAL DESCRIPTION FEATURES The DG180 thru DG191 series of analoggates consist of 2 or 4 N-channel junction-type field-effect transistors JFET) designed to function as electronic switches. Level-shifting
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DG180-191
DG180
DG191
10MHz,
SPDT-DG186/187/188
DG186/187/188
DPST-DG183/184/185
DG183/184/185
DG189/190/191
55D8
circuit diagram for je 182 g
DG181
DG180-191
DG182
DG183
DG184
DG185
DG186
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boitier to 126
Abstract: l14oc BF 914 2n 693 2N706 ESM 470
Text: Silicon PNP transistors, video high voltage Tamb = 25 0C Transistors PNP silicium , haute tension vidéo v CËO <V Case V C E sa t V ) fT (MHz/ T S i 76 min Page max <c / I b (m A ) - 10 - 0 ,5 50/5 100 # - 10 - 0 ,5 50/5 100 # 30 - 25 - 0 ,5 -5 /1 70 §
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ESM753
l14oc
boitier to 126
l14oc
BF 914
2n 693
2N706
ESM 470
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CT 1975 sam
Abstract: transistor NEC D 588 NEC 2561 LE 401 zo 607 p 408 NEC 2561 de nec 2561 Q 634 date sheet ic 7483 C4570 CT 1975 - sam T72 marking
Text: DATA SHEET SILICON TRANSISTOR 2SC4570 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION T h e 2S C 4 5 7 0 is a low su p p ly vo lta g e tra n sisto r de sig n e d for UHF PACKAGE DIMENSIONS Units: mm O S C /M IX . 2.1 ±0.1 It is su ita b le fo r a high d e n sity surface m ount asse m bly sin ce the
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2SC4570
2SC4570-T1
CT 1975 sam
transistor NEC D 588
NEC 2561 LE 401
zo 607 p 408
NEC 2561 de
nec 2561 Q 634
date sheet ic 7483
C4570
CT 1975 - sam
T72 marking
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transistor 373
Abstract: 8060 transistor
Text: Catalog 1307612 J & IV IF * Specialty Sockets Revised 7-01 Transistor Sockets 8058 & 8060 Series 8060-1G11 8060-1G6 FEATURES: PERFORMANCE SPECIFICATIONS: The 8058/8060 family of teflon sockets, with beryllium copper contacts, offers many features which allow them to be utilized in the most severe
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8060-1G11
8060-1G6
MIL-S-83502/2
M1L-S-83502/5.
transistor 373
8060 transistor
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