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    SMC Corporation of America AW40-04BD-8-XG

    FILTER REGULATOR, MODULAR, AW SERIES | SMC Corporation AW40-04BD-8-XG
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    RS AW40-04BD-8-XG Bulk 5 Weeks 1
    • 1 $99.1
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    SMC Corporation of America AFM30-02BD-8-XG

    MIST SEPARATOR, MODULAR, AFM SERIES | SMC Corporation AFM30-02BD-8-XG
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS AFM30-02BD-8-XG Bulk 5 Weeks 1
    • 1 $82.3
    • 10 $82.3
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    SMC Corporation of America AW40K-04BD-8-XG

    FILTER REGULATOR, MODULAR, AW SERIES | SMC Corporation AW40K-04BD-8-XG
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS AW40K-04BD-8-XG Bulk 5 Weeks 1
    • 1 $97.35
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    SMC Corporation of America AFM30-03BD-8-XG

    MIST SEPARATOR, MODULAR, AFM SERIES | SMC Corporation AFM30-03BD-8-XG
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS AFM30-03BD-8-XG Bulk 5 Weeks 1
    • 1 $82.3
    • 10 $82.3
    • 100 $82.3
    • 1000 $82.3
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    BD8X Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BD281

    Abstract: BD2810G BD809 BD809G BD810 200 watts audio amp power transistors circuit diagram
    Text: BD809 NPN , BD810 (PNP) Plastic High Power Silicon Transistor These devices are designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. http://onsemi.com Features • DC Current Gain − hFE = 30 (Min) @ IC = 2.0 Adc


    Original     		PDF BD809 BD810 BD809/D BD281 BD2810G BD809 BD809G BD810 200 watts audio amp power transistors circuit diagram

    TC200G02 toshiba

    Abstract: TC200G70 bt816 cnh 743 YMUX24H toshiba TC200 CNH 532 TC200E240 Transistor AC 51 0865 75 834 BT16ODFS
    Text: ASIC DATA BOOK TC200G/E SERIES MACROCELLS Non-liner Delay Models 1997 ASIC Data Book TC200G/E SERIES MACROCELLS (Non-linear Delay Models) Published in July, 1996 Document ID: 451V1CA (C) Copyright 1996 TOSHIBA Corporation All Rights Reserved The information contained herein is subject to change without notice. The


    Original     		PDF TC200G/E 451V1CA TC200G02 toshiba TC200G70 bt816 cnh 743 YMUX24H toshiba TC200 CNH 532 TC200E240 Transistor AC 51 0865 75 834 BT16ODFS

    Untitled

    Abstract: No abstract text available
    Text: BD809 NPN , BD810 (PNP) Plastic High Power Silicon Transistor These devices are designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. http://onsemi.com Features • DC Current Gain − hFE = 30 (Min) @ IC = 2.0 Adc


    Original     		PDF BD809 BD810 BD809/D

    1000 watts power amp circuit diagram

    Abstract: 200 watt audio amplifier 500 watts audio amplifier diagram NPN 200 VOLTS POWER TRANSISTOR power transistor audio amplifier 500 watts AMP contact assembly bd809 BD809G BD810 BD810G
    Text: BD809 NPN , BD810 (PNP) Plastic High Power Silicon Transistor These devices are designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. http://onsemi.com Features • DC Current Gain − hFE = 30 (Min) @ IC = 2.0 Adc


    Original     		PDF BD809 BD810 BD809/D 1000 watts power amp circuit diagram 200 watt audio amplifier 500 watts audio amplifier diagram NPN 200 VOLTS POWER TRANSISTOR power transistor audio amplifier 500 watts AMP contact assembly bd809 BD809G BD810 BD810G

    Untitled

    Abstract: No abstract text available
    Text: BD809 NPN , BD810 (PNP) Plastic High Power Silicon Transistors These devices are designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. Features http://onsemi.com 10 AMPERE POWER TRANSISTORS 80 VOLTS 90 WATTS


    Original     		PDF BD809 BD810 BD809/D

    BD809

    Abstract: No abstract text available
    Text: BD809 NPN , BD810 (PNP) Plastic High Power Silicon Transistor These devices are designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. http://onsemi.com Features • DC Current Gain − hFE = 30 (Min) @ IC = 2.0 Adc


    Original     		PDF BD809 BD810 BD809/D BD809

    BD809G

    Abstract: BD810G BD809 BD810
    Text: BD809 NPN , BD810 (PNP) Plastic High Power Silicon Transistor These devices are designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. http://onsemi.com Features •ăDC Current Gain - hFE = 30 (Min) @ IC = 2.0 Adc


    Original     		PDF BD809 BD810 BD809/D BD809G BD810G BD809 BD810

    Untitled

    Abstract: No abstract text available
    Text: BD809 NPN , BD810 (PNP) Plastic High Power Silicon Transistor These devices are designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. http://onsemi.com Features • DC Current Gain − hFE = 30 (Min) @ IC = 2.0 Adc


    Original     		PDF BD809 BD810 90sale BD809/D

    74ls82

    Abstract: 74245 BIDIRECTIONAL BUFFER IC 74ls150 ph 4531 diode 4583 dual schmitt trigger ic D flip flop 7474 74245 BUFFER IC ic 7483 BCD adder data sheet ic 74139 Quad 2 input nand gate cd 4093
    Text: General Features The SCxD4 series of high perform ance CM O S gate arrays offers the user the ability to realise custom ised VLSI inte­ grated circuits featuring the speed perform ance previously obtainable only with bipo lar tech nolog ies whilst retaining all


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    74LS82

    Abstract: 74245 BIDIRECTIONAL BUFFER IC ic 4583 schmitt trigger core bit excess 3 adder using IC 7483 advantages for ic 7473 4 BIT COUNTER 74669 la 4508 ic schematic diagram XF107 74295 random number generator by using ic 4011 and 4017
    Text: General Features The SCxD4 series of high performance CMOS gate arrays offers the user the ability to realise customised VLSI inte­ grated circuits featuring the speed performance previously obtainable only with bipolar technologies whilst retaining all the advantages of CMOS technology; low power consum p­


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    toshiba tc110g

    Abstract: 74LS82 74ls150 74LS514 toshiba tc140g 74ls150 pin configuration 74LS273 SC11C1 diode sr45 74LS194 internal circuit diagram
    Text: SIEMENS AKTIEN6ESELLSCHAF 47E » • BS3SbOS 0037405 7 » S I E G General Description Our Sea-of-Gates concept is based on a highperformance CMOS technology, in either 1.5 micron or 1.0 micron transistor gate length. This is equivalent to 1.1 or 0.8 micron effective


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