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    BD242 TRANSISTOR Search Results

    BD242 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    BD242 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BD242

    Abstract: No abstract text available
    Text: BD242/A/B/C BD242/A/B/C Medium Power Linear and Switching Applications • Complement to BD241/A/B/C respectively 1 TO-220 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCEO VCER


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    PDF BD242/A/B/C BD241/A/B/C O-220 BD242 BD242A BD242B BD242C BD242

    BD242

    Abstract: bd242 TRANSISTOR equivalent BD242A BD242B BD242C
    Text: BD242/A/B/C BD242/A/B/C Medium Power Linear and Switching Applications • Complement to BD241/A/B/C respectively TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCEO VCER


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    PDF BD242/A/B/C BD241/A/B/C O-220 BD242 BD242A BD242B BD242C BD242 bd242 TRANSISTOR equivalent BD242A BD242B BD242C

    fast switching pnp transistor 3A 60V

    Abstract: bd241 BD242
    Text: BD242/A/B/C BD242/A/B/C Medium Power Linear and Switching Applications • Complement to BD241/A/B/C respectively TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCEO VCER


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    PDF BD242/A/B/C BD241/A/B/C O-220 BD242 BD242A BD242B BD242C fast switching pnp transistor 3A 60V bd241 BD242

    BD241

    Abstract: BD241C BD242 BD242C BD242A BD241A BD241B BD242/A/B/C
    Text: NPN BD241, A, B, C, PNP BD242, A, B, C, MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS. The BD241, A, B, C are the NPN transistors, the complementary PNP are BD242, A, B, C. They are the silicon epitaxial-base Power Transistors for use in medium power linear and


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    PDF BD241, BD242, O-220 BD241/BD242 BD241A/BD242A BD241B/BD242B BD241C/BD242C BD241 BD241C BD242 BD242C BD242A BD241A BD241B BD242/A/B/C

    BD242

    Abstract: BD242C BD242B BD242A vbe0 30v
    Text: SavantIC Semiconductor Product Specification BD242/A/B/C Silicon PNP Power Transistors DESCRIPTION •With TO-220C package ·Complement to type BD241/A/B/C APPLICATIONS ·For medium power linear and switching applications PINNING PIN DESCRIPTION 1 Emitter 2


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    PDF BD242/A/B/C O-220C BD241/A/B/C BD242 BD242A BD242B BD242C BD242 BD242C BD242B BD242A vbe0 30v

    BD241

    Abstract: BD241C BD241A BD241B
    Text: SavantIC Semiconductor Product Specification BD241/A/B/C Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·Complement to type BD242/A/B/C APPLICATIONS ·For medium power linear and switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to


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    PDF BD241/A/B/C O-220C BD242/A/B/C BD241 BD241A BD241B BD241C BD241 BD241C BD241A BD241B

    BD241

    Abstract: BD242/A/B/C BD241B BD241C BD241A
    Text: Inchange Semiconductor Product Specification BD241/A/B/C Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type BD242/A/B/C APPLICATIONS ・For medium power linear and switching applications PINNING PIN DESCRIPTION 1 Base


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    PDF BD241/A/B/C O-220C BD242/A/B/C BD241 BD241B BD241C BD241A BD241 BD242/A/B/C BD241B BD241C BD241A

    bd242 TRANSISTOR equivalent

    Abstract: BD242 BD242A BD241 BD242B BD242C
    Text: BD242, BD242A, BD242B, BD242C PNP SILICON POWER TRANSISTORS Copyright 1997, Power Innovations Limited, UK ● JUNE 1973 - REVISED MARCH 1997 Designed for Complementary Use with the BD241 Series TO-220 PACKAGE TOP VIEW ● 40 W at 25°C Case Temperature


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    PDF BD242, BD242A, BD242B, BD242C BD241 O-220 BD242 BD242A BD242B bd242 TRANSISTOR equivalent BD242 BD242A BD242B BD242C

    BD242

    Abstract: BD242B BD242C BD241 BD242/A/B/C BD242A
    Text: Inchange Semiconductor Product Specification BD242/A/B/C Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type BD241/A/B/C APPLICATIONS ・For medium power linear and switching applications PINNING PIN DESCRIPTION 1 Emitter


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    PDF BD242/A/B/C O-220C BD241/A/B/C BD242 BD242B BD242C BD242A BD242 BD242B BD242C BD241 BD242/A/B/C BD242A

    tj241

    Abstract: 241B BD241 BD241A BD241B BD241C BD242 BD242A BD242B BD242C
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer TO-220 Plastic Package BD241, BD241A, BD241B, BD241C BD242, BD242A, BD242B, BD242C BD241, 241A, 241B, 241C NPN PLASTIC POWER TRANSISTORS


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    PDF O-220 BD241, BD241A, BD241B, BD241C BD242, BD242A, BD242B, BD242C tj241 241B BD241 BD241A BD241B BD241C BD242 BD242A BD242B BD242C

    Untitled

    Abstract: No abstract text available
    Text: BD242, BD242A, BD242B, BD242C PNP SILICON POWER TRANSISTORS Designed for Complementary Use with the BD241 Series TO-220 PACKAGE TOP VIEW 40 W at 25°C Case Temperature 3 A Continuous Collector Current B 1 5 A Peak Collector Current C 2 Customer-Specified Selections Available


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    PDF BD242, BD242A, BD242B, BD242C BD241 O-220 BD242 BD242A BD242B

    BD241

    Abstract: BD241A BD241B BD241C
    Text: BD241/A/B/C BD241/A/B/C Medium Power Linear and Switching Applications • Complement to BD242/A/B/C respectively TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCEO VCER


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    PDF BD241/A/B/C BD242/A/B/C O-220 BD241 BD241A BD241B BD241C BD241 BD241A BD241B BD241C

    transistor crossreference

    Abstract: transistor cross reference NPN Transistor BD241 TRANSISTOR b 115 fairchild BD241 bd241a
    Text: BD241/A/B/C BD241/A/B/C Medium Power Linear and Switching Applications • Complement to BD242/A/B/C respectively TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCEO VCER


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    PDF BD241/A/B/C BD242/A/B/C O-220 BD241 BD241A BD241B BD241C transistor crossreference transistor cross reference NPN Transistor BD241 TRANSISTOR b 115 fairchild BD241 bd241a

    Untitled

    Abstract: No abstract text available
    Text: BD241, BD241A, BD241B, BD241C NPN SILICON POWER TRANSISTORS Designed for Complementary Use with the BD242 Series TO-220 PACKAGE TOP VIEW 40 W at 25°C Case Temperature 3 A Continuous Collector Current 5 A Peak Collector Current B 1 C 2 Customer-Specified Selections Available


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    PDF BD241, BD241A, BD241B, BD241C BD242 O-220 BD241 BD241A

    bd242c

    Abstract: bd242 BD242A V442 bd242b
    Text: BD242/A/B/C PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POW ER LINEAR AND SWITCHING APPLICATIONS • Complement to BD241/A/B/C respectively A B S O LU T E MAXIMUM RATINGS Characteristic Collector Emitter Voltage : BD242 Symbol Rating : BD242A -45 -60 : BD242B


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    PDF BD242/A/B/C BD241/A/B/C BD242 BD242A BD242B BD242C bd242 BD242A V442 bd242b

    bd242

    Abstract: No abstract text available
    Text: BD242/A/B/C PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • Complement to BD241/A/B/C respectively ABSOLUTE MAXIMUM RATINGS C haracteristic Symbol Collector Emitter Voltage : BD242 Rating VcEO : BD242A U nii -4 5 V - 60


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    PDF BD242/A/B/C BD241/A/B/C BD242 BD242A BD242B BD242C bd242

    BD242A

    Abstract: No abstract text available
    Text: BD242/A/B/C PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD 241/A/B/C respectively ABSOLUTE MAXIMUM RATINGS Characteristic Sym bol C ollector Em itter V oltage : BD242 Rating Unit - 45 V : BD242A - 60


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    PDF BD242/A/B/C 241/A/B/C BD242 BD242A BD242B BD242C BD242A

    BD242C

    Abstract: BD242 BD242A BD242B bd242 TRANSISTOR
    Text: BD242/A/B/C PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD 241/A/B/C respectively ABSOLUTE MAXIMUM RATINGS C haracteristic Sym bol C ollector Em itter Voltage : BD242 Rating Unit - 45 V : BD242A - 60


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    PDF BD242/A/B/C BD241/A/B/C BD242 BD242A BD242B BD242C BD242C BD242 BD242A BD242B bd242 TRANSISTOR

    Untitled

    Abstract: No abstract text available
    Text: BD241/A/B/C NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • Complement to BD242/A/B/C respectively ABSOLUTE MAXIMUM RATINGS Characteristic Sym bol Collector-Emitter Voltage : BD241 : BD241A : BD241B : BD241C Collector Emitter Voltage : BD241


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    PDF BD241/A/B/C BD242/A/B/C BD241 BD241A BD241B BD241C

    D241C

    Abstract: No abstract text available
    Text: BD241/A/B/C NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • Complement to BD242/A/B/C respectively ABSOLUTE MAXIMUM RATINGS C haracteristic Symbol Collector-Emitter Voltage : BD241 : BD241A : BD241B : BD241C Collector Emitter Voltage : BD241


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    PDF BD241/A/B/C BD242/A/B/C BD241 BD241A BD241B BD241C D241C

    BD241B

    Abstract: b0241b BD241 VCS-60V 80241 80241A B0241C BD241A BD241C BD242
    Text: ÆàMOSPEC COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS NPN BD241 BD241A BD241B BD241C . designed for use in general purpose power amplifier and switching applications. FEATURES: * Collector-Emitter Sustaining Voltage V ceo «.»= 45V(Min - BD241.BD242


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    PDF BD241 BD242 BD241A BD242A BD241B BD242B BD241C BD242C 500mA b0241b VCS-60V 80241 80241A B0241C BD242

    b0241b

    Abstract: BD241B VCS-60V B0241C BD241 BD241A BD241C BD242 BD242A BD242B
    Text: COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS . designed for use in general purpose power amplifier and switching applications. FEATURES: Boca Semiconductor Corp. * Collector-Emitter Sustaining Voltage BSC V ceo «.»= 45V(Min - BD241.BD242 60V(Min)- BD241A.BD242A


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    PDF BD241 BD242 BD241A BD242A BD241B BD242B BD241C BD242C 500mA b0241b VCS-60V B0241C BD242

    B0241A

    Abstract: NPN Transistor BD241 BD241 tpm300 BD241C
    Text: BD241, BD241A, BD241B, BD241C NPN SILICON POWER TRANSISTORS Copyright C 1997, Povwf InnovaUone Um itod. 1973 - REVISED MARCH 1997 • Designed for Complementary Use with the BD242 Series • 40 W at 25”C Case Temperature


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    PDF BD241, BD241A, BD241B, BD241C BD242 O-220 BD241 B0241A BD241B NPN Transistor BD241 tpm300

    BD242B

    Abstract: BD242C BD241 BD242 BD242A
    Text: /fiANSYS ELECTRONICS BD242, BD242A, BD242B, BD242C PNP SILICON POWER TRANSISTORS LIMITED Designed for Complementary Use with the BD241 Series TO-220 PACKAGE TOP VIEW 40 W at 25°C Case Temperature 3 A Continuous Collector Current B C 5 A Peak Collector Current


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    PDF BD242, BD242A, BD242B, BD242C BD241 O-220 BD242 BD242A BD242B