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    LM143H/883 Rochester Electronics LLC Operational Amplifier, 1 Func, 6000uV Offset-Max, BIPolar, MBCY8, METAL CAN, BCY-8 Visit Rochester Electronics LLC Buy
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    onsemi NCP1365BABCYDR2G

    Switching Controllers NCP1365 HV CONTROLLER
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    Zetex / Diodes Inc BCY65EBES

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    BCY 65 Datasheets (86)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BCY65 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BCY65 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    BCY65 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    BCY65 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    BCY65 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BCY65 Philips Semiconductors Silicon Planar Epitaxial Transistor Scan PDF
    BCY65E Ferranti Semiconductors Metal Can Transistors (Short Form) Scan PDF
    BCY65E Ferranti Semiconductors Quick Reference Guide 1985 Scan PDF
    BCY65E Micro Electronics Semiconductor Device Data Book Scan PDF
    BCY65E Micro Electronics Low Level and General Purpose Amplifiers Scan PDF
    BCY65E Motorola The European Selection Data Book 1976 Scan PDF
    BCY65E Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BCY65E Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BCY65E Unknown Diode, Transistor, Thyristor Datasheets and more Scan PDF
    BCY65E Unknown Shortform Transistor Datasheet Guide Short Form PDF
    BCY65E Siemens Semiconductor Manual, Discrete Industrial Types 1974 Scan PDF
    BCY65E Siemens NPN silicon planar transistors Scan PDF
    BCY65E Siemens Semiconductor Data Book (German) 1976/77 Scan PDF
    BCY65E Zetex Semiconductors Quick Reference Guide (Discrete Semiconductors) 1991 Scan PDF
    BCY65E7 Unknown Shortform Transistor Datasheet Guide Short Form PDF

    BCY 65 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    65e7

    Abstract: BCY65 BCY 59 bcy58 59VIII BCY58-VIII BCY59 Q60203-Y58-G BCY 65 Q60203-Y59-J
    Text: BCY 58, BCY 59, BCY 65 E ~ 2 N 2483 NPN Transistors fo r AF prestages, driver stages and switching applications BCY 58, BCY 59 and BCY 65 E are silicon planar NPN epitaxial transistors in a case 18 A 3 DIN 41 876 (TO -18). The collector is electrically connected to the case.


    OCR Scan     		Q60203-Y58-G Q60203-Y Q60203-Y58-J Q60203-Y58-K Q60203-Y59-J Q60203-Y59-K 65-E7 65e7 BCY65 BCY 59 bcy58 59VIII BCY58-VIII BCY59 BCY 65 PDF

    BCY71

    Abstract: BCY 107 BCY72 100-C bcy72a bcy70
    Text: BCY 70 BCY 71 BCY 72 SILICON PLANAR PNP GENERAL PURPOSE APPLICATIONS The BCY 70, BCY 71 and BCY 72 are silicon planar epitaxial PNP transistors in Jedec TO-18 metal case. They are intended for general purpose amplifier and switching applica­ tions. ABSOLUTE MAXIMUM RATINGS


    OCR Scan     		PDF

    TRANSISTOR A104

    Abstract: BCY59C BCY 85 A104 BCY58 Transistor BCY58 BCY59D A104 transistor BCY 68 CEB15
    Text: MICRO GENERAL DESCRIPTION : BCY 58 BCY 59 MECHANICAL OUTLINE The BCY 58 and BCY 59 are NFN silicon planar epitaxial transistor. It features low saturation voltage and high gain. It is intended for use as audio frequency amplifier, magnetic core driver and general


    OCR Scan     		BCY58 Ic-10â R2-700ohm TRANSISTOR A104 BCY59C BCY 85 A104 Transistor BCY58 BCY59D A104 transistor BCY 68 CEB15 PDF

    BCY 107

    Abstract: BCY 62 BCY71 BCY72 BCY 12 bcy70
    Text: BCY 70 BCY 71 BCY 72 SILICON PLANAR PNP GENERAL PURPOSE APPLICATIONS The BCY 70, BCY 71 and BCY 72 are silicon planar epitaxial F‘NP transistors in Jedec T O -1 8 metal case. They are intended fo r general purpose am p lifie r and switching applica­ tions.


    OCR Scan     		G--18S1 BCY 107 BCY 62 BCY71 BCY72 BCY 12 bcy70 PDF

    BCY 59

    Abstract: BCY 12 BCY58X BCY 85 BCY59 BCY59X BCY58 BCY58-VIII Ucesat BCY 58
    Text: N P N -Transistoren fü r N F -V o r- und T re ib erstu fen sow ie S ch alteran w en dungen - BCY 58 BCY 59 BCY 65 E BCY 58, BCY 59 und BCY 65 E sind epitaktische NPN-Silizium -Planar-Transistoren im Gehäuse 18 A 3 DIN 41 876 T O -1 8 . Der Kollektor ist m it dem Gehäuse elektrisch ver­


    OCR Scan     		Q60203- BCY 59 BCY 12 BCY58X BCY 85 BCY59 BCY59X BCY58 BCY58-VIII Ucesat BCY 58 PDF

    BCY 68

    Abstract: BCY58 BCY59 0431I BCY68 BCY 59 Q60203-Y58 Q60203-Y58-H Q60203-Y58-J Q60203-Y59
    Text: 2SC » • 023SbQS GGQM30b 3 « S I E G NPN Silicon Planar Transistors - BCY 58 BCY59 D - BCY 65 E 2 5C 04306 BCY 58, BCY 59, and BCY 65 E are epitaxial NPN silicon Planartransistors in T 0 18 cases 18 A 3 DIN 41 87 6 . The collector is electrically connected to the case. The transistors


    OCR Scan     		23Sb05 BCY58 BCY59 Q60203-Y58 Q60203-Y58-G Q60203-Y58-H Q60203-Y58-J Q60203-Y58-K Q60203-Y59 Q60203-Y59-G BCY 68 0431I BCY68 BCY 59 PDF

    BCY59

    Abstract: BCY 85 BCY58 Q60203-Y58 Q60203-Y58-G Q60203-Y58-H Q60203-Y58-J Q60203-Y58-K Q60203-Y59 Q60203-Y59-G
    Text: 2SC » • 023SbQS GGQM30b 3 « S I E G NPN Silicon Planar Transistors - 2 5C 0 4 3 0 6 BCY 58 BCY59 D - BCY 65 E BCY 58, BCY 59, and BCY 65 E are epitaxial NPN silicon Planartransistors in T 0 18 cases 18 A 3 DIN 41876 . The collector is electrically connected to the case. The transistors


    OCR Scan     		23Sb05 BCY58 BCY59 Q60203-Y58 Q60203-Y58-G Q60203-Y58-H Q60203-Y58-J Q60203-Y58-K Q60203-Y59 Q60203-Y59-G BCY 85 Q60203-Y58 Q60203-Y58-G Q60203-Y58-H Q60203-Y58-J Q60203-Y58-K Q60203-Y59 Q60203-Y59-G PDF

    BCY79

    Abstract: bcy 78 bcy 79
    Text: BCY 78 BCY 79 PNP SILICON TRANSISTOR TRANSISTOR PNP S ILIC IU M Compì, of BCY 58 and BCY 59 • Switching and amplifier Commutation e t am plification -3 2 V BCY 78 v CEO -4 5 V BCY 79 'c - 2 0 0 mA M a xim u m pow er dissipation Case TO-18 — See outline drawing CB-6 on last pages


    OCR Scan     		i-10mA 990i2, BCY79 bcy 78 bcy 79 PDF

    bcy580

    Abstract: BCY590 transistor h21e SCHEMA BCY59 BCY 59
    Text: *BCY 58 BCY59 NPN SILICON TRANSISTOR TRANSÌSTOR NPN S ILIC IU M Compì, of BCY 78 and BCY 79 Preferred device Dispositif recommandé • For switching and amplifier - Pour com m utation et am plification V CEO 32 V 45 V BCY 58 •c 200 mA BCY 59 Maximum power dissipation


    OCR Scan     		BCY59 lB2ai10mA bcy580 BCY590 transistor h21e SCHEMA BCY59 BCY 59 PDF

    A404

    Abstract: No abstract text available
    Text: BCY 58 BCY 59 GENERAL DESCRIPTION i The BCY 58 and BCY 59 are NPN silic o n planar e p ita x ia l tra n s is to r. I t featu res low satu ratio n voltage and high gain. I t i s intended for use as audio frequency am p lifier, magnetic core d riv er and general


    OCR Scan     		390aW 390mW -65eC 200mA TA-150 A404 PDF

    BCY792

    Abstract: bcy 79 Q62702-C327 BCY78 BCY77 BCY 78 Q62702-C327-V1 Q62702-C327-V2 Q62702-C327-V3 78-IX
    Text: 5SC T> m fi23SbOS D00432S 7 « S I E G r . PNP Silicon Planar Transistors BCY77 D _BCY78 BCY 79 25C 04325 SIEMENS A K T I E N 6 E S E L L SCHAF BCY 77, BCY 78, and BCY 79 are epitaxial PNP silicon planar transistors in TO 18 cases 18 A 3 DIN 41876 . The collector is electrically connected to the case. The transistors are


    OCR Scan     		23Sb05 QQ0432S Q62702-C327 Q62702-C327-V1 Q62702-C327-V2 Q62702-C327-V3 Q60203-Y78 Q60203-Y78-G Q60203-Y78-H Q60203-Y78-J BCY792 bcy 79 BCY78 BCY77 BCY 78 78-IX PDF

    BCY77

    Abstract: BCY79 BCY 791x zr 4.7v bcy 78 Q62702-C327 BCY78 Q62702-C327-V1 Transistor 78 L 05 1Zv transistor
    Text: BCY77, BCY 78, BCY79 PNP Transistors for low-noise AF pre- and driver stages BCY 77, BCY 78 and BCY 79 are epitaxial PNP silicon planar transistors in a case 18 A 3 DIN 41876 TO-18 . The collector is electrically connected to the case. The transistors are of particular use in low-noise AF pre- and driver stages as well as in


    OCR Scan     		BCY77, BCY79 BCY78 Q62702-C327-V1 Q62702-C 327-V2 327-V3 Q60203-Y78-G BCY77 BCY79 BCY 791x zr 4.7v bcy 78 Q62702-C327 Q62702-C327-V1 Transistor 78 L 05 1Zv transistor PDF

    BCY77VII

    Abstract: BCY78X BCY79 BCY 791x BCY77VIII BCY77 BCY78 Q62702-C327-V1 1Zv transistor
    Text: BCY77, BCY 78, BCY79 PNP Transistors for low-noise AF pre- and driver stages BCY 77, BCY 78 and BCY 79 are epitaxial PNP silicon planar transistors in a case 18 A 3 DIN 41876 TO-18 . The collector is electrically connected to the case. The transistors are of particular use in low-noise AF pre- and driver stages as well as in


    OCR Scan     		BCY79 BCY77, BCY78 Q62702-C327-V1 Q62702-C 327-V2 327-V3 Q60203-Y78-G Q60203-Y78-H BCY77VII BCY78X BCY79 BCY 791x BCY77VIII BCY77 Q62702-C327-V1 1Zv transistor PDF

    Q62702-C327

    Abstract: Q62702-C327-V2 bcy77 K1754 C327 Q62702-C327-V1 Q62702-C327-V3 78-IX Q60203-Y78-H BCY792
    Text: 5SC D • a23SbQS 0Q0432S 7 « S I E G r PNP Silicon Planar Transistors _ SIEMENS AKTIENGESELLSCHAF . BCY77 25C 04325 D ;_ B£ I ? S BCY79 BCY 77, BCY 78, and BCY 79 are epitaxial PNP silicon planar transistors in TO 18 cases 18 A 3 DIN 41876 . The collector is electrically connected to the case. The transistors are


    OCR Scan     		53SbOS G00432S Q62702-C327 Q62702-C327-V1 Q62702-C327-V2 Q62702-C327-V3 Q60203-Y78 Q60203-Y78-G Q60203-Y78-H Q60203-Y78-J Q62702-C327 Q62702-C327-V2 bcy77 K1754 C327 Q62702-C327-V1 Q62702-C327-V3 78-IX Q60203-Y78-H BCY792 PDF

    tfk 731

    Abstract: N100700 bcy 79 BCY58 BCY 65 BCY 59
    Text: BCY 58 • BCY 59 Silizium-NPN-Epitaxial-Planar-Transistoren Silicon NPN Epitaxial Planar Transistors Anwendungen: Allgem ein und NF-Verstärker Applications: General and AF am plifiers Besondere Merkmale: Features: • Verlustleistung 1 W 0 Power dissipation 1 W


    OCR Scan     		PDF

    BCY69

    Abstract: BCY 69 transistor 468
    Text: BCY 69 NPN SILICON TRANSISTOR, EPITAXIAL PLANAR TRANSISTOR NPN S ILICIUM , PLANAR EPITAXIAL - LF small signal amplification low noise Amplification BP petits signaux (faible bruit) v CEO 20 V 'c 100 mA *216 (2 600 - 900 F (0,2 mA) 5 dB max Maximum power dissipation


    OCR Scan     		PDF

    BCY67

    Abstract: HTI 2E 101S Q62702-C254
    Text: BCY67 PNP Transistor for low-noise AF pre-stages BCY 67 is an epitaxial PNP silicon planar transistor in a case 18 A 3 DIN 41 876 T O -18 . The collector is electrically connected to the case. The transistor has been designed for especially low-noise pre-stages as well as in


    OCR Scan     		BCY67 BCY67 10ZkHz HTI 2E 101S Q62702-C254 PDF

    bcy 79

    Abstract: No abstract text available
    Text: rz 7 ^ 7# SGS-THOMSON R L E M « ! BCY 79 LO W NOISE AU D IO AM PLIFIER S DESCRIPTION The BCY79 is a silicon planar epitaxial PNP transistors in JedecTO-18 metal case. They are designed for use in audio driver and low-noise input stages. The complementary NPN type is the BCY59.


    OCR Scan     		BCY79 JedecTO-18 BCY59. bcy 79 PDF

    59VIII

    Abstract: 79VIII BCY 62 59IX BCY 68 79-IX BCY57 BCY58VII BCY58VIII T018
    Text: BHARAT ELEK/SEfllCOND DI 47E D • 14353^0 □□□□013 72? ■ B E L l T '"Zf'OÍ VCE Si Device No VCEO VCBO Volts mm Volts mm V ebo Vofts mm hFE at bias min /max Ic mA VCE Volts 1CM mA max Ptol mW max ICBO <A typ (Sat Volts typ fT MHz typ Cob pF typ


    OCR Scan     		BCY57 BCY58VII BCY58VIII 59VIII 100min. 78VII 78VIII 79VII 79VIII BFW10 59VIII 79VIII BCY 62 59IX BCY 68 79-IX BCY58VIII T018 PDF

    59VIII

    Abstract: 79-IX BCY 68 BCY58X BCY 62 BFW10 59vii BHARAT elek BCY58VII BCY58VIII
    Text: BH AR AT E L E K / S E m C O N D DI 47E D • 1 4 3 5 3^ 3 □ □ □□ □1 3 ?B? ■ B E L l T ~ 2 7 '0 t VCE Si V CEO D e vice No VCBO Volts V o lts mm mm V ebo V ofts min hFE Ic V CE i CM at bias min /max mA Volts mA max Ptol mW ICBO »¿A typ max S at


    OCR Scan     		BCY57 BCY58VII BCY58VIII 59VIII 100min. 78VII 78VIII BCY79VII 79VIII BFW10 59VIII 79-IX BCY 68 BCY58X BCY 62 59vii BHARAT elek BCY58VIII PDF

    Q62702-C327

    Abstract: BCY79 BCY 12 C327 78-VIII 79IX 34RR
    Text: PIMP-Transistoren für rauscharm e NF-Vor- und B C Y 77 Treiberstufen B C Y 78 -B C Y 79 BC Y 77; BC Y 78; BC Y 79 sind epitaktische PNP-Silizium-Planar-Transistoren im Gehäuse 18 A3 DIN 41 876 TO -18 . Der Kollektor ist mit dem Gehäuse elektrisch verbunden. Die


    OCR Scan     		Q62702- -C327-V1 -C327-V2 -C327-V3 Q60203- -Y78-G -Y78-H Q62702-C327 BCY79 BCY 12 C327 78-VIII 79IX 34RR PDF

    transistor BC 584

    Abstract: TRANSISTOR BC 456 Transistor BC 585 transistor BC 583 D 92 02 78.P BFW 10 fet Transistor BFX 41 TRANSISTOR BC 416 b BC583 transistor BC 548
    Text: 6091788 MICRO ELECTRONICS C ORP 820 0064 5 05 DE § b D T 1 7 f l a QODGbMS 4 | TYPE NO. POLARITY Low Level and General Purpose Amplifiers H MAXIMUM RATINGS V CE SAT FE Cob N.F. max max (MHz) (pF) (dB) — 200+ 150 150 150 150 2.7+ 4.5 4.5 4.5 6 2 10 10 4


    OCR Scan     		bDT17fla O-92F to-02 melf-002. transistor BC 584 TRANSISTOR BC 456 Transistor BC 585 transistor BC 583 D 92 02 78.P BFW 10 fet Transistor BFX 41 TRANSISTOR BC 416 b BC583 transistor BC 548 PDF

    bc 170

    Abstract: BC108C 173C BC174 bc 170 c transistor Bc 540 BC108A BFY19 BC 109 Transistor specification of transistor bc 107
    Text: NPN Silicon Transistors NPN Silicon Epitaxial Planar Transistors l c = 100mA for general amplifying and switching purposes Common maximum ratings - lc -V e B O 100 mA5 5 V5 Common characteristics (Tamb — 25 C) 300 mW (TO -92)3 300 mW (TO -18)4 Ti P lo t


    OCR Scan     		100mA) BC108B BC108C. bc 170 BC108C 173C BC174 bc 170 c transistor Bc 540 BC108A BFY19 BC 109 Transistor specification of transistor bc 107 PDF

    g16b

    Abstract: D71613 TGWR
    Text: N EC ELECTRONICS INC Tfi D 1b457SS5 0015^3 □ D T ^ S 2 t S 5 -C 3 |iPD71613 CMOS Bus C o n t r o l l e r P r e l im in a r y I n f o r m a t io n Description Pin Configuration The n P D 7 1 6 1 3 is a high performance C M O S bus controller for the nPD70616 V60 microprocessor. The


    OCR Scan     		1b457SS5 uPD71613 nPD70616 iPD70616 b427525 1ST31 T-52-33-03 g16b D71613 TGWR PDF