BCW65CR
Abstract: bcw66
Text: PART OBSOLETE - USE BCW66H BCW65 BCW66 ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . PARAMETER Collector-Emitter Breakdown Voltage SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. BCW65 BCW66 V(BR)CEO 32 45 V ICEO=10mA ICEO=10mA BCW65 BCW66 V(BR)CES 60
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BCW66H
BCW65A
BCW65B
BCW65C
BCW66F
BCW66G
BCW65
BCW67
BCW66
BCW65CR
bcw66
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BCW65AR
Abstract: BCW65BR BCW66HR BCW66GR BCW65CR BCW65 BCW65A BCW65B BCW65C BCW66F
Text: BCW65 BCW66 ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . PARAMETER Collector-Emitter Breakdown Voltage SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. BCW65 BCW66 V(BR)CEO 32 45 V ICEO=10mA ICEO=10mA BCW65 BCW66 V(BR)CES 60 75 V IC=10µA IC=10µA
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BCW65
BCW66
150oC
BCW65AR
BCW65BR
BCW66HR
BCW66GR
BCW65CR
BCW65
BCW65A
BCW65B
BCW65C
BCW66F
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MARKING CODE EA
Abstract: EA transistor transistor transistor EH sot-23 transistor marking code SOT-23 BCW65A BCW66H DEVICE MARKING CODE table marking code 5 marking EA BCW65
Text: Central BCW65 SERIES BCW66 SERIES TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR BCW65 and BCW66 Series types are NPN Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for general purpose switching and
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BCW65
BCW66
OT-23
100mA
500mA
BCW65A
BCW66F
BCW65B
MARKING CODE EA
EA transistor transistor
transistor EH sot-23
transistor marking code SOT-23
BCW65A
BCW66H
DEVICE MARKING CODE table
marking code 5
marking EA
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BCW65A
Abstract: BCW65B BCW65BR BCW66H BCW65 BCW65C BCW65CR BCW66F BCW66FR BCW66G
Text: BCW65 BCW66 SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 3- AUGUST PARTMARKING 1995 DETAILS EA BCW65A13 - BCW65B - EB BCW65BR - 5V BCW65C - EC BCW65CR - 6V 7P BCW65A - EF BCW66FR - BCW66G - EG BCW66GF - 5T BCW66H - EH BCW66HF - 7M TYPES BCW65 -
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BCW65
BCW66
BCW65A13
BCW65B
BCW65BR
BCW65CR
BCW65C
BCW65A
BCW66F
BCW66FR
BCW66H
BCW65
BCW66G
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BCW65 ec
Abstract: BCW66H BCW65AR
Text: Not Recommended for New Design Please Use BCW66H BCW65 BCW66 ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . PARAMETER Collector-Emitter Breakdown Voltage SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. BCW65 BCW66 V(BR)CEO 32 45 V ICEO=10mA ICEO=10mA
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BCW65A
BCW65B
BCW65C
BCW66F
BCW66G
BCW66H
BCW65
BCW67
BCW66
BCW68
BCW65 ec
BCW66H
BCW65AR
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BCW65A
Abstract: No abstract text available
Text: Central BCW65 SERIES BCW66 SERIES Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR BCW65 and BCW66 Series types are NPN Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for general purpose switching and
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BCW65
BCW66
BCW65A:
BCW65B:
BCW65C:
OT-23
500mA,
20MHz
BCW65A
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MARKING CODE EA
Abstract: "MARKING CODE EA"
Text: BCW65 SERIES BCW66 SERIES SURFACE MOUNT NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BCW65 and BCW66 Series types are NPN Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for
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BCW65
BCW66
OT-23
500mA,
100mA,
20MHz
BCW65B
MARKING CODE EA
"MARKING CODE EA"
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Untitled
Abstract: No abstract text available
Text: BCW65 SERIES BCW66 SERIES w w w. c e n t r a l s e m i . c o m SURFACE MOUNT NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR BCW65 and BCW66 Series types are NPN Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for
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BCW65
BCW66
OT-23
IC-65
BCW65A
BCW66F
BCW65B
BCW66G
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BCW65
Abstract: EA SOT-23 BCW66 BCW67 BCW68 BCW65 ec EC marking NPN EA SOT-23 PNP
Text: BL Galaxy Electrical Production specification NPN General Purpose Amplifier BCW65/66 FEATURES Pb z For general AF appilications. z High current gain. z Low collector-emitter saturation voltage. z Complementary types:BCW67,BCW68 PNP Lead-free APPLICATIONS
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BCW65/66
BCW67
BCW68
OT-23
BCW65A/B/C
BCW66F/G/H
BCW65
BCW66
BCW65
EA SOT-23
BCW66
BCW65 ec
EC marking NPN
EA SOT-23 PNP
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Untitled
Abstract: No abstract text available
Text: BCW65 BCW66 SMALL SIGNAL NPN TRANSISTORS Type Marking BCW 65A EA BCW 65B EB BCW 65C EC BCW66F EF BCW 66G EG BCW 66H EH 2 3 • ■ ■ ■ SILICON EPITAXIAL PLANAR NPN TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS MEDIUM CURRENT AF AMPLIFICATION
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BCW65
BCW66
BCW66F
BCW67
BCW68
OT-23
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Untitled
Abstract: No abstract text available
Text: Transistors IC SMD Type Product specification BCW65,BCW66 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 0.55 Low collector-emitter saturation voltage. +0.1 1.3-0.1 +0.1 2.4-0.1 High current gain. 0.4 3 For general AF applications. 2 +0.1 0.95-0.1 +0.1
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BCW65
BCW66
OT-23
BCW65
100ge
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Untitled
Abstract: No abstract text available
Text: BCW65, BCW66 NPN Silicon AF Transistor 3 For general AF applications High current gain Low collector-emitter saturation voltage Complementary types: BCW67, BCW68 PNP 2 1 Type Marking Pin Configuration BCW65A EAs 1=B 2=E 3=C SOT23 BCW65B EBs 1=B 2=E
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BCW65,
BCW66
BCW67,
BCW68
VPS05161
BCW65A
BCW65B
BCW65C
BCW66F
BCW66G
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BCW65
Abstract: BCW65A BCW65B BCW65C BCW66 BCW66F BCW66G BCW66H BCW67 BCW68
Text: BCW65, BCW66 NPN Silicon AF Transistor 3 For general AF applications High current gain Low collector-emitter saturation voltage Complementary types: BCW67, BCW68 PNP 2 1 Type Marking Pin Configuration BCW65A EAs 1=B 2=E 3=C SOT23 BCW65B EBs 1=B 2=E
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BCW65,
BCW66
BCW67,
BCW68
BCW65A
BCW65B
BCW65C
BCW66F
BCW66G
BCW66H
BCW65
BCW65A
BCW65B
BCW65C
BCW66
BCW66F
BCW66G
BCW66H
BCW67
BCW68
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BCW66
Abstract: EFs SOT-23 BCW65 egs SOT23
Text: Transistors IC SMD Type NPN General Purpose Transistors BCW65,BCW66 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 0.55 Low collector-emitter saturation voltage. +0.1 1.3-0.1 +0.1 2.4-0.1 High current gain. 0.4 3 For general AF applications. 2 +0.1 0.95-0.1
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BCW65
BCW66
OT-23
BCW65
BCW66
EFs SOT-23
egs SOT23
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BCW66
Abstract: transistor EH sot-23 BCW65 BCW65A BCW65B BCW66F BCW67 BCW68 ferranti BCW66H
Text: * FERRANTI semiconductors BCW65 BCW66 NPN Sil icon Planar Medium Power Transistors DESCRIPTION These devices are intended for use in medium power general purpose, switching and low noise applications. Complementary to the BCW67 and BCW68. Encapsulated in the popular SOT-23 package these devices
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BCW65
BCW66
BCW67
BCW68.
OT-23
BCW66
BCW65/66,
BCW65/66
transistor EH sot-23
BCW65A
BCW65B
BCW66F
BCW68
ferranti
BCW66H
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CE 65 M
Abstract: BCW65CR
Text: PLESSEY SEMICOND/DISCRETE □3 DE I 7EEG533 0D0bL,33 □ NPN silicon planar medium power transistors BCW65 BCW66 ABSOLUTE M A X IM U M RATINGS Parameter Symbol B C W 65 B C W 66 Unit Collector-Emltter Voltage V ces 60 75 V Collector-Emitter Voltage V ceo 32
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OCR Scan
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7EEG533
BCW65
BCW66
BCW65BR
CE 65 M
BCW65CR
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PDF
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CW65
Abstract: No abstract text available
Text: BCW65 BCW66 SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 3 - AUGUST 1935_ P A R T M A R K IN G D E T A IL S B C W 65A - EA B CW 65A R - BCW 65B - EB B C W 65B R - 4V 5V B CW 65C - EC B C W 65C R - 6V B CW 66F - EF B CW 66FR -
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BCW65
BCW66
CW65
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pac 007a
Abstract: No abstract text available
Text: rS Z S G S -T H O M S O N Ä T # M iS B m iC T l « ! BCW65 BCW66 SMALL SIGNAL NPN TRANSISTORS Type M arking BCW 65A EA BCW 65B EB BCW 65C EC BCW 66F EF BCW 66G EG BCW 66H EH . SILICO N EPITAXIAL PLANAR NPN T R A N SIST O R S . MINIATURE PLASTIC PAC KAG E FO R
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BCW65
BCW66
BCW67
BCW68
OT-23
SC06960
BCW65/BCW66
OT-23
7TSTE37
pac 007a
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BCW66
Abstract: BCW65 BCW65A BCW67 BCW68 bcw66fr
Text: BCW65 BCW66 SOT23 NPN SILICON PLANAR M EDIUM POWER TRANSISTORS IS S U E 3 - A U G U S T 1995 P A R T M A R K IN G D E T A IL S B C W 6 5 A - EA _ B C W 6 5 A R - 4V B C W 65BR - 5V B C W 6 5 B - EB B C W 6 5 C - EC B C W 6 6 F - EF BC W 65CR - 6V B C W 6 6 G - EG
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BCW65
BCW66
-BCW65A-
BCW65B-
BCW65C-
BCW66F-
BCW66G-
BCW66H-
-BCW65
BCW67
BCW65A
BCW68
bcw66fr
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marking code E3t
Abstract: No abstract text available
Text: SIEMENS NPN Silicon AF Transistors BCW 65 BCW 66 • For general AF applications • High current gain • Low collector-emitter saturation voltage • Complementary types: BCW 67, BCW 68 PNP Type BCW BCW BCW BCW BCW BCW 65 65 65 66 66 66 A B C F G H Marking
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OCR Scan
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Q62702-C1516
Q62702-C1612
Q62702-C1479
Q62702-C1892
Q62702-C1526
Q62702-C1632
OT-23
fl535b05
BCW65
BCW66
marking code E3t
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transistor C458
Abstract: NPN C458 c458 NPN transistor TRANSISTOR C460 transistor C461 c458 transistor transistors c458 c460 transistor C458 C459
Text: BCW 65, BCW66 NPN Transistors for AF driver stages and switching applications B C W 65 and B C W 66 are epitaxial NPN silicon planar transistors in a plastic package 23 A 3 DIN 41 869 SOT-23 for use in driver stages and switching as well as universal applications. They are particularly suitable for thick and thin film circuits. Both types
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OCR Scan
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BCW66
OT-23)
Q62702
Q62702-
Q62702
transistor C458
NPN C458
c458 NPN transistor
TRANSISTOR C460
transistor C461
c458 transistor
transistors c458
c460 transistor
C458
C459
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BCW66
Abstract: No abstract text available
Text: SIEMENS NPN Silicon AF Transistors • • • • BCW 65 BCW 66 For general AF applications High current gain Low collector-emitter saturation voltage Complementary types: BCW 67, BCW 68 PNP Type Marking Ordering Code (tape and reel) PinC onfiguration 2
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OCR Scan
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Q62702-C1516
Q62702-C1612
Q62702-C1479
Q62702-C1892
Q62702-C1526
Q62702-C1632
OT-23
BCW65
BCW66
EHP00590
BCW66
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Untitled
Abstract: No abstract text available
Text: T - w NPN Silicon AF Transistors 32E D SIEMENS/ • 023b32Q SPCLi Q G lb b ^ 1 - n IS I P BCW 65 BCW 66 SE MI CONDS For general A F applications High current gain Low collector-emitter saturation voltage Complementary types: B C W 67, B C W 68 PNP Type Marking
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023b32Q
BCW65
23b320
BCW66
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SOT-23 marking AFE
Abstract: 65 b S
Text: NPN Silicon AF Transistors • • • • B CW 65 B CW 66 For general AF applications High cu rre n t gain Lo w co lle c to r-e m itte r saturation voltage C om plem entary types'. BCW 67, BCW 68 PNP Type □ BCW 65 A □ BCW 65 B S BCW 65 C Marking EA
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