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    BCW 85 TRANSISTOR Search Results

    BCW 85 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    BCW 85 TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    transistor c331

    Abstract: scw 61 ST CD C331 BCX70 C331 c331 transistor ZES1 za sot23 ST CD C333 st c332
    Text: BCW 60 BCX 70 IMPN-Transistoren für NF-Vorstufen und Schalteranwendung BCW 60 und BCX 70 sind epitaktische NPN-Silizium-Planar-Transistoren mit Plastikum­ hüllung 23 A 3 DIN 41 869 SO T-23 für NF-Vorstufen und Schalteranwendungen. Sie eignen sich besonders für Dick- und Dünnfilmschaltungen. Beide Typen BCW 60 und


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    OT-23) Q62702- -C331 -C332 -C333 -C334 61v-4 transistor c331 scw 61 ST CD C331 BCX70 C331 c331 transistor ZES1 za sot23 ST CD C333 st c332 PDF

    BCW61DR

    Abstract: No abstract text available
    Text: plessey "ÏÏB s e m i c o n d /d i s c r e t e » F|7 SS05 33 DOOtitiBO = r ~T' PNP silicon planar small signal transistor BCW 61 A B S O L U T E M A X IM U M R A T IN G S Parameter Collector-Emitter Voltage Collector-Emitter Voltage Sym bol Emitter-Base Voltage


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: PLESSEY SEfllCOND/DISCRETE 03 DE | 72S0533 QODbba? S ^9-/£ NPN silicon planar small signal transistor BCW 60 ABSOLUTE MAXIMUM RATINGS Parameter Symbol Unit BCW60 V 32 Collector-Emitter Voltage V ces Collector-Emitter Voltage V CEO 32 V Emitter-Base Voltage


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    72S0533 BCW60 PDF

    BCW60

    Abstract: transistor ad 1v hFE Group ferranti BCW60A BCW60B BCW60C BCW60D FERRANTI ZS Scans-0010382
    Text: FERRANTI k semiconductors BCW60 N P N Silicon Planar Small Signal Transistor DESCRIPTION These devices are intended fo r use in low level a m plifica ­ tion, low level sw itching and low noise applications. Encapsulated in the popular SOT-23 package these devices


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    BCW60 OT-23 BCW60 BCW60, BCW60A BCW60B BCW60C transistor ad 1v hFE Group ferranti BCW60D FERRANTI ZS Scans-0010382 PDF

    transistor c429

    Abstract: zo 103 ma c336 transistors C338 c428 transistor Q62702-C338 WS450 16-BIS
    Text: BCW 61 BCX 71 PN P -Transistoren fü r IM F-Vorstufen und S chalteran w en dung BCW 61 und BCX 71 sind epitaktische PNP-Silizium-Planar-Transistoren mit Plastikum­ hüllung 23 A 3 DIN 41 869 SOT-23 für NF-Vorstufen und Schalteranwendungen. Sie eignen sich besonders für Dick- und Dünnfilmschaltungen. Beide Typen BCW 61 und


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    OT-23) Q62702-C335 Q62702-C336 Q62702-C337 Q62702-C338 transistor c429 zo 103 ma c336 transistors C338 c428 transistor Q62702-C338 WS450 16-BIS PDF

    C337 W 61

    Abstract: c337 pnp c336 transistors c337 pnp transistor C338 5101B KBR bk 06 BCX70 BCX71 C336
    Text: BCW 61, BCX71 PNP Transistors for A F prestages and switching applications BCW 61 and BCX71 are epitaxial PNP silicon planar transistors in a plastic case 23 A 3 DIN 41869 SO T-23 for AF prestages and switching applications. They are particularly designed for use in thick and thin film circuits. Both types BCW 61


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    BCW61 BCX71 OT-23) BCX71) BCX70. Q62702- C337 W 61 c337 pnp c336 transistors c337 pnp transistor C338 5101B KBR bk 06 BCX70 C336 PDF

    sot-23 MARKING CODE G1

    Abstract: C5 MARKING TRANSISTOR sot 23 marking code 2t BFS20 sot-23 Marking G1 MARKING CODE DH SOT 23 marking code C5 sot23 marking H6 sot 23 marking code CB sot23 marking of m7 diodes
    Text: FERRANTI semiconductors BFS20 NPN Silicon Planar VHF Transistor DESCRIPTION These devices are intended fo r IF and V H F applications w here lo w feedback capacitance is required. Encapsulated in the popular SOT-23 package these devices are designed specifically fo r use in thin and thick film


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    BFS20 OT-23 BFS20 FMMT-A13 FMMT-A14 BCW67A FMMT-A20 BCW67B FMMT-A42 sot-23 MARKING CODE G1 C5 MARKING TRANSISTOR sot 23 marking code 2t sot-23 Marking G1 MARKING CODE DH SOT 23 marking code C5 sot23 marking H6 sot 23 marking code CB sot23 marking of m7 diodes PDF

    transistor C458

    Abstract: NPN C458 c458 NPN transistor TRANSISTOR C460 transistor C461 c458 transistor transistors c458 c460 transistor C458 C459
    Text: BCW 65, BCW66 NPN Transistors for AF driver stages and switching applications B C W 65 and B C W 66 are epitaxial NPN silicon planar transistors in a plastic package 23 A 3 DIN 41 869 SOT-23 for use in driver stages and switching as well as universal applications. They are particularly suitable for thick and thin film circuits. Both types


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    BCW66 OT-23) Q62702 Q62702- Q62702 transistor C458 NPN C458 c458 NPN transistor TRANSISTOR C460 transistor C461 c458 transistor transistors c458 c460 transistor C458 C459 PDF

    c331 npn transistor

    Abstract: transistor c331 c331 transistor BCX70 S3V 83 BCW60 a/9014 transistor c331 C332 C333 C423
    Text: BCW60, BCX70 NPN Transistors for AF prestages and switching applications BCW 60 and BCX 70 are epitaxial NPN silicon planar transistors in a plastic case 23 A 3 DIN 41 869 S O T -2 3 fo r AF prestages and sw itc h in g applications. They are particularly designed fo r use in th ic k and th in film circuits. Both types BCW 60


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    BCW60, BCX70 OT-23) Q62702 Q62702- c331 npn transistor transistor c331 c331 transistor BCX70 S3V 83 BCW60 a/9014 transistor c331 C332 C333 C423 PDF

    BCX71RG

    Abstract: BCW61RA BCW61RD BCW61 BCX71 BCW61R transistor marking bh ra BCW60 BCW61A BCW61B
    Text: ITT SEMICON] / INTERMETALL SOE » 4bfl2711 D002L00 714 BCW 61, BCX71 PNP Silicon Epitaxial Planar Transistor for switching and AF am plifier applications. H Especially suited for automatic insertion in thick- and thin-film circuits. The transistors BCW61 are subdivided into the groups A, B,


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    BCW61, BCX71 D002L00 BCW61 BCX71 BCW60 BCX70 BCW61R BCX71RG BCW61RA BCW61RD transistor marking bh ra BCW61A BCW61B PDF

    2sd 5023

    Abstract: transistor BC 945 2SC 9012 bc 9013 transistor bc 855 9416A Transistor BC345 BFY41 bcx 388 BC 945
    Text: SEMICONDUCTORS INC OTE D | fil3t.t,5Q □D0Q2C12 7 | T TYPE NO. POLARITY Medium Power Transistors MAXIMUM RATINGS CASE Pd mW HFE •c (A) VCEO IV) min 40 35 40 40 40 VCE(SAT) max ■c (A) (VÏ COMPLE­ MENTARY TYPE *T min (MHz) Cob max (pF) 0.15 1 0.3 1


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    -26UNF-2A O-48D 2sd 5023 transistor BC 945 2SC 9012 bc 9013 transistor bc 855 9416A Transistor BC345 BFY41 bcx 388 BC 945 PDF

    2sd 5023

    Abstract: bc 9013 bc 9013 g 2SC 9012 2218A cs9012 BC526 transistor BC 945 BC287 Transistor BC345
    Text: SEMICONDUCTORS INC OTE D | fil3t.t,5Q □D0Q2C12 7 | T TYPE NO. POLARITY Medium Power Transistors MAXIMUM RATINGS CASE Pd mW HFE ic (A) VCEO IV) min max 40 35 40 40 40 120 VCE(SAT) max (A) (Vï COMPLE­ MENTARY TYPE *T min (MHz) Cob max (pF) 0.15 1 0.3 1


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    13LLSD to-39 2sd 5023 bc 9013 bc 9013 g 2SC 9012 2218A cs9012 BC526 transistor BC 945 BC287 Transistor BC345 PDF

    transistors BC 23

    Abstract: 14 SOT-23 sot-23 ce 110 sot 23 SOT-23 BSS sot-23 npn BCW60 BCW65 BCX41 BCX55
    Text: AF transistors M axim um ratings PNP = P NPN = N V Kdeo BC 817 BC 818 BC 846 BC 847 BC 848 BC 849 BC 850 N N N N N N N BC 807 BC 808 BC 856 BC 857 BC 858 BC 859 BC 860 P P P P P P P BCW60 BCW65 BCW 66 BCX41 BCX 54 BCX55 BCX 56 BCX 68 BCX 70 N N N N N N N N


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    P3000 BSS64 BSS79 BSS81 BSS63 transistors BC 23 14 SOT-23 sot-23 ce 110 sot 23 SOT-23 BSS sot-23 npn BCW60 BCW65 BCX41 BCX55 PDF

    sot-23 pinout

    Abstract: PMBT3903 bc818 bcp56 sot 23 1a BC818-16 BC818-25 BC818-40 BC848A BC848B
    Text: 58 N AMER PHILIPS/DISCRETE Surface Mount Devices 2SE D • V-Xl-Ol ^ 5 3 ^ 3 1 Q01bE3b T ■ GENERAL PURPOSE TRANSISTORS, NPN : RATINGS TY PE PACKAG E VcEO V VcBQ V mA . - - hFE VCE sat mìnVmax. at Iq /Vc E . mA/V V max. at Iq /Ib mA/mA PINOUT SEE SECTION


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    BCP68 BC818-16 BC818-25 BC818-40 BCX20 BC848A BC848B BC848C BCV61 PMBT2222 sot-23 pinout PMBT3903 bc818 bcp56 sot 23 1a BC818-40 BC848A BC848B PDF

    Untitled

    Abstract: No abstract text available
    Text: BCW 60 SERIES J \ _ SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N silicon transistors, in a m icrom iniature plastic package, intended for low level, low noise, low frequency purpose applications in hybrid circuits. Q U IC K R E F E R E N C E D A T A


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    OT-23. BCW600 PDF

    Transistoren DDR

    Abstract: vergleichsliste TELEFUNKEN bux 127 aktive elektronische bauelemente ddr BUX 127 SF 127 vergleichsliste DDR "vergleichsliste" bauelemente DDR sf 369
    Text: VT FUNKAMATEUR-Bauelementeinformation Vergleichsliste für Transistoren DDR/international DDR-Typ Vergleichstyp Beschreibung Hinweise SC 237/238/239 SC 307/308/309 SCE 237 SD 335/337/339 BC 237/238/239 BC 307/308/309 BC 847 BCW 71/72 BCX 70 BC 848 BCW 31/32/33/60


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    SCE237 SCE238 SCE239 SCE308 Transistoren DDR vergleichsliste TELEFUNKEN bux 127 aktive elektronische bauelemente ddr BUX 127 SF 127 vergleichsliste DDR "vergleichsliste" bauelemente DDR sf 369 PDF

    transistor marking code 7E SOT-23

    Abstract: transistor dg sot-23 marking 1p transistor sot23 D6 TRANSISTOR MARKING m6 marking transistor sot-23 sot-23 MARKING CODE G1 TRANSISTOR 1P SOT23 transistor sot-23 Marking AR transistor G1 SOT-23 transistor cg sot-23
    Text: FERRANTI semiconductors BSS63 PNP S ilico n Planar High V o lta g e T ra n s is to r D ES C R IPTIO N & This plastic encapsulated transistor is designed fo r any application requiring high vo lta g e capability a t relatively low collector currents. C o m p lem en tary to th e BSS64.


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    BSS63 BSS64. OT-23 FMMT-A13 FMMT-A14 BCW67A FMMT-A20 BCW67B transistor marking code 7E SOT-23 transistor dg sot-23 marking 1p transistor sot23 D6 TRANSISTOR MARKING m6 marking transistor sot-23 sot-23 MARKING CODE G1 TRANSISTOR 1P SOT23 transistor sot-23 Marking AR transistor G1 SOT-23 transistor cg sot-23 PDF

    bcx71

    Abstract: No abstract text available
    Text: BCW61 BCX71 SMALL SIGNAL PNP TRANSISTORS Type Marking BCW 61A BA BCW 61B BB BCW 61C BC BCX71G BG BCX71H BH BCX71J BJ 2 3 • ■ ■ ■ SILICON EPITAXIAL PLANAR PNP TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS LOW LEVEL AF AMPLIFICATION AND


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    BCW61 BCX71 BCX71G BCX71H BCX71J BCW60 BCX70 OT-23 BCX71 PDF

    55n60

    Abstract: transistor Bc 949 transistor BC 56 BDP 71 AF-Transistor siemens sot223 Transistor bdp 71 4126P SOT-223 2907 BC 948
    Text: Transistoren Transistors NF-Transistoren Transistoren für allgemeine und Schaltanwendungen AF-Transistors General Purpose and Switching Transistors Type N = NPN P = PNP Maximum Ratings Chara cteristics [Tk - 2>5°C J'CEO V mA ^CBQ Ptot / t mW MHz nA at VQB0 hfE


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    OT-23 BC807W OT-323 BC817W OT-89 55n60 transistor Bc 949 transistor BC 56 BDP 71 AF-Transistor siemens sot223 Transistor bdp 71 4126P SOT-223 2907 BC 948 PDF

    BCW60

    Abstract: BCX70
    Text: BCW60 BCX70 SMALL SIGNAL NPN TRANSISTORS Type Marking BCW 60A AA BCW 60B AB BCW 60C AC BCX70G AG BCX70H AH BCX70J AJ 2 3 • ■ ■ ■ SILICON EPITAXIAL PLANAR NPN TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS LOW LEVEL AF AMPLIFICATION AND


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    BCW60 BCX70 BCX70G BCX70H BCX70J BCW61 BCX71 OT-23 BCX70 PDF

    7FL01

    Abstract: No abstract text available
    Text: r r 7 SGS-THOM SON ^7# BCW61 BCX71 MÊlf^ilLiOTIRMei SMALL SIGNAL PNP TRANSISTORS Type M arking BCW 61A BA BCW 61B BB BCW 61C BC BCX71G BG BCX71H BH BCX71J BJ . SILICON EPITAXIAL PLANAR PNP TRANSISTORS . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING


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    BCW61 BCX71 BCX71G BCX71H BCX71J BCW60 BCX70 OT-23 SC08810 BCW61 7FL01 PDF

    6CS transistor

    Abstract: transistor 6cs
    Text: BC817./ BC818. NPN Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary types: BC807./W, BC808./W PNP Type Marking Pin Configuration


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    BC817. BC818. BC807. BC808. BC817-16 BC817-25 BC817-25W BC817-40 BC817-40W BC818-16W 6CS transistor transistor 6cs PDF

    egs SOT23

    Abstract: BC817K-40 thermal resistance
    Text: BC817./ BC818. NPN Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary types: BC807./W, BC808./W PNP Type Marking Pin Configuration


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    BC817. BC818. BC807. BC808. BC817-16 BC817K-16* BC817-25 BC817K-25* BC817-25W BC817K-25W* egs SOT23 BC817K-40 thermal resistance PDF

    Untitled

    Abstract: No abstract text available
    Text: S 0 T 2 3 NPN SILICON PLANAR SMALL SIGNAL TRANSISTORS BCW 60 PARTMARKING DETAILS:BCW60A - AA BCW60AR - CR BCW60B - AB BCW60BR - DR BCW60C - AC BCW60CR - AR BCW60D - AD BCW60DR - BR ABSOLUTE MAXIMUM RATINGS PARAMETER SYM BO L VALUE UNIT C ollector-B ase V oltag e


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    BCW60A BCW60AR BCW60B BCW60BR BCW60C BCW60CR BCW60D BCW60DR 100MHz 200Hz PDF