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    BCW 25 TRANSISTOR Search Results

    BCW 25 TRANSISTOR Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    BCW 25 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    C1681

    Abstract: c1555 c1893 Q62702-C1322 Q62702-C1480 Q62702-C1555 Q62702-C1560 Q62702-C1681 Q62702-C1893 BCW67C
    Text: PNP Silicon AF Transistors BCW 67 BCW 68 For general AF applications ● High current gain ● Low collector-emitter saturation voltage ● Complementary types: BCW 65, BCW 66 NPN ● Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 3 Package1)


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    PDF Q62702-C1560 Q62702-C1480 Q62702-C1681 Q62702-C1893 Q62702-C1322 Q62702-C1555 OT-23 C1681 c1555 c1893 Q62702-C1322 Q62702-C1480 Q62702-C1555 Q62702-C1560 Q62702-C1681 Q62702-C1893 BCW67C

    Untitled

    Abstract: No abstract text available
    Text: BCW 60 General Purpose Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage NPN Power dissipation – Verlustleistung 1.3 ±0.1 2.5 max 3 Type Code 2 1 250 mW Plastic case Kunststoffgehäuse


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    PDF OT-23 O-236) UL94V-0

    BCW61FF

    Abstract: BCs sot23
    Text: BCW 61, BCX 71 PNP Silicon AF Transistor • For AF input stages and driver applications 3 • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BCW 60, BCX 70 NPN 2 1 Type Marking


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    PDF OT-23 120Hz BCW61FF BCs sot23

    2BCW

    Abstract: No abstract text available
    Text: BCW 71, BCW 72 General Purpose Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage NPN NPN Power dissipation – Verlustleistung Plastic case Kunststoffgehäuse 1.1 2.9 ±0.1 0.4 1.3 ±0.1 2.5 max


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    PDF OT-23 O-236) UL94V-0 2BCW

    Q62702-C1478

    Abstract: C1890 ic c1891 datasheet Q62702-C1482 Q62702-C1554 Q62702-C1556 Q62702-C1585 Q62702-C1586 Q62702-C1654 Q62702-C1890
    Text: PNP Silicon AF Transistors ● ● ● ● ● BCW 61 BCX 71 For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BCW 60, BCX 70 NPN Type Marking Ordering Code


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    PDF Q62702-C452 Q62702-C1585 Q62702-C1478 Q62702-C1556 Q62702-C1890 Q62702-C1891 Q62702-C1482 Q62702-C1586 Q62702-C1554 Q62702-C1654 Q62702-C1478 C1890 ic c1891 datasheet Q62702-C1482 Q62702-C1554 Q62702-C1556 Q62702-C1585 Q62702-C1586 Q62702-C1654 Q62702-C1890

    marking 65B

    Abstract: No abstract text available
    Text: BCW 65, BCW 66 General Purpose Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage NPN NPN Power dissipation – Verlustleistung Plastic case Kunststoffgehäuse 1.1 2.9 ±0.1 0.4 1.3 ±0.1 2.5 max


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    PDF OT-23 O-236) UL94V-0 marking 65B

    BCV71

    Abstract: BCV72 BCX70G FMMT3903 FMMT3904 FMMT3905 FMMT3906 BCW61D 215
    Text: SOT-23 TRANSISTORS NPN GENERAL PURPOSE RATINGS A N D CHARACTERISTICS at 25°C ambient temperature. Type BCV71 BCV72 FM MT3903 FMMT3904 BCW 71/71R BCW 72/72R BCX70G BCX70H BCX70J BGX70K BCW 60A BCW60B BCW60C BCW 60D BCW 31/31R BCW 32/32R BCW 33/33R FM M T-A 20


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    PDF OT-23 BCV71 BCV72 FMMT3903 FMMT3905 FMMT3904 FMMT3906 BCW71/71R BCW69/69R BCW72/72R BCX70G FMMT3905 FMMT3906 BCW61D 215

    transistor BD 540

    Abstract: Transistor BFT 99 Transistor BFR 39 BFW 10 fet Transistor BFR 80 Transistor BFT 10 transistor BFT 41 371b Transistor BFT 42 TRANSISTOR bd 108
    Text: 6 0 9 y e a MICRO ELECTRONICS CORF D E | b [ m 7 f i a DOGObS? D | 02 82D 00657 D *7^ 12.5?“ N O. B C W 94 BCW 95 BCW 96 BCW 97 B C X 25 BCX26 B C X 40 B C X 45 BCX 46 ' ' M AXIM UM R A T IN G S V C E S A T Ul u. TYPE X P O L A R IT Y Medium Kower Am plifiers and Switches


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    PDF 609yea BCW94 O-92F BCW96 BCW95 BCW97 BCW94 transistor BD 540 Transistor BFT 99 Transistor BFR 39 BFW 10 fet Transistor BFR 80 Transistor BFT 10 transistor BFT 41 371b Transistor BFT 42 TRANSISTOR bd 108

    KSC815

    Abstract: No abstract text available
    Text: TRANSISTORS FUNCTION GUIDE SOT-23 Transistors Continued Device and Polarit(Marking) Condition NPN PNP KST1009F2(F2) KST1009F3(F3) KST1009F4(F4) KST1009F5(F5) KST4124(ZC) BCW 29(Ct) BCW31(D1) 1.1.2 (V) 25 25 25 25 25 20 20 V ce lc (A) (V) 3 3 3 3 1 (mA) MIN


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    PDF OT-23 KST1009F2 KST1009F3 KST1009F4 KST1009F5 KST4124 BCW31 O-92S KSA1150 KSA1378 KSC815

    Untitled

    Abstract: No abstract text available
    Text: BCW71 BCW 72 IL SILICON PLANAR EPITAXIAL TRANSISTORS N -P-N transistors M arking BCW71 = Kl BCW72 = K2 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 3.0 0.14 Pin configuration 1 « BASE 2= EMITTER 3= COLLECTOR 0.90 ABSOLUTE MAXIMUM RATINGS D.C. current gain at Tj = 25 °C


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    PDF BCW71 BCW72

    Untitled

    Abstract: No abstract text available
    Text: SEM ICONDUCTOR TECHNICAL DATA BCW29/30 EPITAXIAL PLANAR PNP TRANSISTOR G E N E R A L PU R PO SE APPLIC A TIO N . SW IT C H IN G APPLIC A TIO N . FEA TU R ES • Complementary to BCW 3I/32 M A X IM U M R A TIN G Ta=25°C SYMBOL CHARACTERISTIC RATING Collector-Base Voltage


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    PDF 3I/32 BCW29/30 BCW29 BCW30 -10/i -10/iA -10mA

    marking da

    Abstract: BCW67 MARKING CODE 67
    Text: PNP Silicon AF Transistors • • • • BCW 67 BCW 68 For general AF applications High current gain Low collector-em itter saturation voltage Complementary types: BCW 65, BCW 66 NPN Type 0 BCW 67 A 0 BCW 67 B 0 BCW 67 C Marking DA DB DC Type 0 BCW 68 F


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    PDF BCW67 marking da MARKING CODE 67

    marking code E3t

    Abstract: No abstract text available
    Text: SIEMENS NPN Silicon AF Transistors BCW 65 BCW 66 • For general AF applications • High current gain • Low collector-emitter saturation voltage • Complementary types: BCW 67, BCW 68 PNP Type BCW BCW BCW BCW BCW BCW 65 65 65 66 66 66 A B C F G H Marking


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    PDF Q62702-C1516 Q62702-C1612 Q62702-C1479 Q62702-C1892 Q62702-C1526 Q62702-C1632 OT-23 fl535b05 BCW65 BCW66 marking code E3t

    Untitled

    Abstract: No abstract text available
    Text: PNP Silicon AF Transistors 32E D m Û23b320 OOlbbfiS 4 « S I P T 'M - IJ SIEMENS/ SPCL-. SEMICONDS • • • • • a a a a BCW61 BCX71 For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz


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    PDF 23b320 BCW61 BCX71 653b350

    c380 NPN transistor

    Abstract: transistor c380 c380 transistor c380 C379 BCW73 Q62702-C383-V1 48v to 24v buck c380 pnp Q62702-C383
    Text: NPIM-Silizium-Transistoren BCW BCW - BCW BCW 73 74 77 78 BCW 73, BCW 74, BCW 77 und BCW 78 sind epitaktische NPN -Silizium -Planar-Transistoren. Der Kollektor ist m it dem Gehäuse elektrisch verbunden. Die Transistoren eignen sich als


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    PDF Q62702- -C379- Q62702-C383-V1 BCW73- BCW77- Q62702-C383â c380 NPN transistor transistor c380 c380 transistor c380 C379 BCW73 Q62702-C383-V1 48v to 24v buck c380 pnp Q62702-C383

    SOT-23 marking AFE

    Abstract: 65 b S
    Text: NPN Silicon AF Transistors • • • • B CW 65 B CW 66 For general AF applications High cu rre n t gain Lo w co lle c to r-e m itte r saturation voltage C om plem entary types'. BCW 67, BCW 68 PNP Type □ BCW 65 A □ BCW 65 B S BCW 65 C Marking EA


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    PDF

    C1554

    Abstract: BKs sot-23 SIEMENS BJS marking BJs
    Text: SIEMENS PNP Silicon AF Transistors BCW 61 BCX 71 • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BCW 60, BCX 70 NPN Type Marking


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    PDF 62702-C452 62702-C1585 62702-C1478 Q62702-C1556 Q62702-C1890 Q62702-C1891 Q62702-C1482 62702-C1586 62702-C1554 62702-C1654 C1554 BKs sot-23 SIEMENS BJS marking BJs

    6CW 73

    Abstract: 6CW pNP 6CW NPN marking 6cw sot-23
    Text: SIEMENS PNP Silicon AF Transistors • • • • BCW 67 BCW 68 For general AF applications High current gain Low collector-emitter saturation voltage Complementary types: BCW 65, BCW 66 NPN Type Marking Ordering Code (tape and reel) PinC¡onfiguration


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    PDF Q62702-C1560 Q62702-C1480 Q62702-C1681 Q62702-C1893 Q62702-C1322 Q62702-C1555 OT-23 D12GT72 Co/68 53Sb05 6CW 73 6CW pNP 6CW NPN marking 6cw sot-23

    BCX61

    Abstract: 71 j BCW61A
    Text: PNP Silicon AF Transistors • • • • • For AF input stages and driver applications High current gain Low collector-em itter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BCW 60, BCX 70 NPN Type BCW 61 BCX 71 BCW 61 BCW 61


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    BCW66

    Abstract: No abstract text available
    Text: SIEMENS NPN Silicon AF Transistors • • • • BCW 65 BCW 66 For general AF applications High current gain Low collector-emitter saturation voltage Complementary types: BCW 67, BCW 68 PNP Type Marking Ordering Code (tape and reel) PinC onfiguration 2


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    PDF Q62702-C1516 Q62702-C1612 Q62702-C1479 Q62702-C1892 Q62702-C1526 Q62702-C1632 OT-23 BCW65 BCW66 EHP00590 BCW66

    BCW91

    Abstract: bcw 91 transistor BCW91B BCW90 BCW90A H21E MA07 bcw 85 transistor BCW90B BCW90C
    Text: BCW 90A, B,C BCW 91 A, B NPN SILICON TRANSISTOR, EPITAXIAL PLANAR TRANSISTOR NPN S ILIC IU M , P LAN A R E P ITAXIAL • LF Amplification A m plifica tio n BF v CEO MOV BCW 90 160 V BCW 91 0,8 V ■c h21E 150 mA-2 V Maximum power dissipation Plastic case


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    PDF BCW90A, BCW91 BCW90 CB-76 bcw 91 transistor BCW91B BCW90 BCW90A H21E MA07 bcw 85 transistor BCW90B BCW90C

    BCW75

    Abstract: C382V BCW79 BCW76 ptoc 6
    Text: BCW BCW - BCW BCW P N P -S iliz iu m -T r a n s is to r e n 75 76 79 80 BCW 75, BCW 76, BCW 79 und BCW 80 sind epitaktische PNP-Silizium -Planar-Transistoren. Der Kollektor ist m it dem Gehäuse elektrisch verbunden. Die Transistoren eignen sich als


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    PDF Q62792- -C381-V1 Q62702-C385-V1 BCW75- Q62702- -C381-V2 BCW79- Q62702-C385-V2 BCW75 C382V BCW79 BCW76 ptoc 6

    BCW61A

    Abstract: No abstract text available
    Text: SIEMENS PNP Silicon AF Transistors BCW 61 BCX 71 • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BCW 60, BCX 70 NPN Type Marking


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    PDF Q62702-C452 Q62702-C1585 Q62702-C1478 Q62702-C1556 Q62702-C1890 Q62702-C1891 62702-C1482 Q62702-C1586 Q62702-C1554 Q62702-C1654 BCW61A

    6CW SOT23

    Abstract: 6CW 36 marking 6cw sot-23 6CW 60 6CW 75 marking 6cw 6CW 71 MARKING 6cw SOT23 6Cw marking code sot 23 6CW pNP
    Text: SIEMENS NPN Silicon AF Transistors BCW 60 BCX 70 • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BCW 61, BCX 71 PNP Type Marking


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    PDF Q62702-C1517 Q62702-C1497 Q62702-C1476 Q62702-C1477 Q62702-C1529 Q62702-C1567 Q62702-C1539 Q62702-C1481 Q62702-C1552 Q62702-C1571 6CW SOT23 6CW 36 marking 6cw sot-23 6CW 60 6CW 75 marking 6cw 6CW 71 MARKING 6cw SOT23 6Cw marking code sot 23 6CW pNP