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    BCJ SCHOTTKY Search Results

    BCJ SCHOTTKY Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUHS20S60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 2.0 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS20F60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 2.0 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS15S60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 1.5 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS15F60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 1.5 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    TRS8E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 8 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation

    BCJ SCHOTTKY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MARKING BCJ

    Abstract: bcj marking MBRM140 BCJ SCHOTTKY
    Text: MBRM140 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop- reverse current tradeoff. The advanced


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    PDF MBRM140 MBRM140 MARKING BCJ bcj marking BCJ SCHOTTKY

    bcj marking

    Abstract: bcj diode MBRM140 MBRM140T1 MBRM140T3 MARKING BCJ JEDEC DO-216aa
    Text: MBRM140 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop- reverse current tradeoff. The advanced


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    PDF MBRM140 r14525 MBRM140/D bcj marking bcj diode MBRM140 MBRM140T1 MBRM140T3 MARKING BCJ JEDEC DO-216aa

    MBRM140

    Abstract: MBRM140T1 MBRM140T3 POWERMITE
    Text: MBRM140 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced


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    PDF MBRM140 r14525 MBRM140/D MBRM140 MBRM140T1 MBRM140T3 POWERMITE

    MBRM140T1G

    Abstract: MBRM140 MBRM140T1 MBRM140T3 MBRM140T3G
    Text: MBRM140 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite® employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop−reverse current tradeoff. The advanced


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    PDF MBRM140 MBRM140T1G MBRM140 MBRM140T1 MBRM140T3 MBRM140T3G

    bcj marking

    Abstract: MBRM140T3
    Text: MBRM140T3 Advance Information Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package http://onsemi.com The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal


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    PDF MBRM140T3 r14525 MBRM140T3/D bcj marking MBRM140T3

    MBRM140T1G

    Abstract: MBRM140 bcj marking MBRM140T1 MBRM140T3 MBRM140T3G D0-216
    Text: MBRM140 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite® employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop−reverse current tradeoff. The advanced


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    PDF MBRM140 MBRM140/D MBRM140T1G MBRM140 bcj marking MBRM140T1 MBRM140T3 MBRM140T3G D0-216

    Untitled

    Abstract: No abstract text available
    Text: MBRM140 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite® employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop−reverse current tradeoff. The advanced


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    PDF MBRM140 MBRM140/D

    bcj marking

    Abstract: bcj diode UPS120 UPS140
    Text: MCC UPS120 THRU UPS140   omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# Features • • • • • High Power Surface Mount Package Guard Ring Protection Low Forward Voltage Integral Heat Sink/Locking Tabs


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    PDF UPS120 UPS140 UPS130 UPS120 25Vdc 20/100ns/cm bcj marking bcj diode UPS140

    bcj marking

    Abstract: MBRM140T3
    Text: MOTOROLA Order this document by MBRM140T3/D SEMICONDUCTOR TECHNICAL DATA Advance Information Surface Mount Schottky Power Rectifier MBRM140T3 POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal


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    PDF MBRM140T3/D MBRM140T3 RectifierMBRM140T3/D bcj marking MBRM140T3

    Untitled

    Abstract: No abstract text available
    Text: MBRM140T3 Advance Information Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package http://onsemi.com The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal


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    PDF MBRM140T3 r14153 MBRM140T3/D

    MBRM140T1G

    Abstract: No abstract text available
    Text: MBRM140T1G, NRVBM140T1G, MBRM140T3G, NRVBM140T3G Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky POWERMITE employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces


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    PDF MBRM140T1G, NRVBM140T1G, MBRM140T3G, NRVBM140T3G MBRM140/D MBRM140T1G

    Untitled

    Abstract: No abstract text available
    Text: MBRM140T1G, NRVBM140T1G, MBRM140T3G, NRVBM140T3G Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky POWERMITE employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces


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    PDF MBRM140T1G, NRVBM140T1G, MBRM140T3G, NRVBM140T3G MBRM140/D

    MUR420 diode

    Abstract: MUR860 equivalent Diode 31DQ06 mr760 DIODE usd745c equivalent 1N5186GP 1N2069 diode MARKING BCJ P600K SES5001 cross reference
    Text: MBRM140T3 Advance Information Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package http://onsemi.com The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal


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    PDF MBRM140T3 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MUR420 diode MUR860 equivalent Diode 31DQ06 mr760 DIODE usd745c equivalent 1N5186GP 1N2069 diode MARKING BCJ P600K SES5001 cross reference

    U840 diode motorola

    Abstract: motorola u860 diode DIODE u1560 b2045 aka u1560 DIODE u860 diode u1560 diode U3J U820 diode fast recovery diode ses5001
    Text: DL151/D Rev. 3, Nov-2000 Rectifier Device Data Rectifier Device Data DL151/D Rev. 3, Oct–2000  SCILLC, 2000 Previous Edition  1995 “All Rights Reserved’’ This book presents technical data for ON Semiconductor’s broad line of rectifiers. Complete specifications are provided in


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    PDF DL151/D Nov-2000 r14525 U840 diode motorola motorola u860 diode DIODE u1560 b2045 aka u1560 DIODE u860 diode u1560 diode U3J U820 diode fast recovery diode ses5001

    JRC 45600

    Abstract: YD 803 SGS 45600 JRC TDA 7277 TDA 5072 krp power source sps 6360 2904 JRC Sony SHA T90 SA philips HFE 4541
    Text: I SEMICON INDEXES Contents and Introduction Manufacturers' Information V O LU M E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 15th EDITION 1997 Numerical Listing of Integrated Circuits Substitution Guide U D C 621.382.3 Diagram s THE S E M IC O N INTERNATIONAL INDEXES


    OCR Scan
    PDF ZOP033 ZOP035 ZOP036 ZOP037 ZOP038 ZOP039 ZOP045 ZOP042 ZOP041 ZOP043 JRC 45600 YD 803 SGS 45600 JRC TDA 7277 TDA 5072 krp power source sps 6360 2904 JRC Sony SHA T90 SA philips HFE 4541