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    BC850C EQUIVALENT Search Results

    BC850C EQUIVALENT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMP89FS60AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP64-P-1010-0.50E Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP52-P-1010-0.65 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS60BFG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1414-0.80-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP52-1010-0.65-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS62AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP44-P-1010-0.80A Visit Toshiba Electronic Devices & Storage Corporation

    BC850C EQUIVALENT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BC849

    Abstract: BC849B BC849C BC850 BC850B BC850C
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package BC849 BC850 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transistors Marking BC849 = 2D BC849B = 2B BC849C = 2C BC850 = 2H BC850B = 2F 8C850C = 2G PACKAGE OUTLINE DETAILS


    Original     		PDF ISO/TS16949 OT-23 BC849 BC850 BC849B BC849C BC850B 8C850C BC849 BC849B BC849C BC850 BC850B BC850C

    2f bc850

    Abstract: BC849 BC849B BC849C BC850 BC850B BC850C
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BC849 BC850 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transistors Marking BC849 = 2D BC849B = 2B BC849C = 2C BC850 = 2H BC850B = 2F 8C850C = 2G


    Original     		PDF OT-23 BC849 BC850 BC849B BC849C BC850B 8C850C 2f bc850 BC849 BC849B BC849C BC850 BC850B BC850C

    MARKING CODE 21E SOT23

    Abstract: BC847C E6433 NPN BC846B SOT23 BC846B E6327 power 22E 1FS SOT23 marking CODE 1BS 1Gs SOT23 DIN 6784 MV SOT23
    Text: BC846.BC850 NPN Silicon AF Transistors • For AF input stages and driver applications • High current gain 3 • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BC856, BC857, BC858 BC859, BC860 PNP


    Original     		PDF BC846. BC850 BC856, BC857, BC858 BC859, BC860 VPS05161 BC846A BC846B MARKING CODE 21E SOT23 BC847C E6433 NPN BC846B SOT23 BC846B E6327 power 22E 1FS SOT23 marking CODE 1BS 1Gs SOT23 DIN 6784 MV SOT23

    BC8488

    Abstract: BC846 BC846A BC846B BC847A BC850 BC856 BC857 BC858 BC859
    Text: BC846.BC850 NPN Silicon AF Transistors  For AF input stages and driver applications  High current gain 3  Low collector-emitter saturation voltage  Low noise between 30 Hz and 15 kHz  Complementary types: BC856, BC857, BC858 BC859, BC860 PNP 2 1 Type


    Original     		PDF BC846. BC850 BC856, BC857, BC858 BC859, BC860 BC846A BC846B BC847A BC8488 BC846 BC846A BC846B BC847A BC850 BC856 BC857 BC858 BC859

    BC8488

    Abstract: BC846 BC846A BC846B BC847A BC850 BC856 BC857 BC858 BC859
    Text: BC846.BC850 NPN Silicon AF Transistors  For AF input stages and driver applications  High current gain 3  Low collector-emitter saturation voltage  Low noise between 30 Hz and 15 kHz  Complementary types: BC856, BC857, BC858 BC859, BC860 PNP 2 1 Type


    Original     		PDF BC846. BC850 BC856, BC857, BC858 BC859, BC860 BC846A BC846B BC847A BC8488 BC846 BC846A BC846B BC847A BC850 BC856 BC857 BC858 BC859

    BC8488

    Abstract: BC846 Infineon BC850C INFINEON
    Text: BC846.BC850 NPN Silicon AF Transistors  For AF input stages and driver applications  High current gain 3  Low collector-emitter saturation voltage  Low noise between 30 Hz and 15 kHz  Complementary types: BC856, BC857, BC858 BC859, BC860 PNP 2 1 Type


    Original     		PDF BC846. BC850 BC856, BC857, BC858 BC859, BC860 VPS05161 BC846A BC846B BC8488 BC846 Infineon BC850C INFINEON

    BC857

    Abstract: BC858 BC859 BC860 BC846 BC846A BC846B BC847A BC850 BC856
    Text: BC846.BC850 NPN Silicon AF Transistors  For AF input stages and driver applications  High current gain 3  Low collector-emitter saturation voltage  Low noise between 30 Hz and 15 kHz  Complementary types: BC856, BC857, BC858 BC859, BC860 PNP 2 1 Type


    Original     		PDF BC846. BC850 BC856, BC857, BC858 BC859, BC860 BC846A BC846B BC847A BC857 BC858 BC859 BC860 BC846 BC846A BC846B BC847A BC850 BC856

    marking CODE 1BS

    Abstract: BC846 Infineon BC846-BC850 NA MARKING SOT23 NPN BC846B SOT23 BC846B E6327 BC857 st MV SOT23 BC857 BC858
    Text: BC846.BC850 NPN Silicon AF Transistors  For AF input stages and driver applications  High current gain 3  Low collector-emitter saturation voltage  Low noise between 30 Hz and 15 kHz  Complementary types: BC856, BC857, BC858 BC859, BC860 PNP 2 1 Type


    Original     		PDF BC846. BC850 BC856, BC857, BC858 BC859, BC860 BC846A BC846B BC847A marking CODE 1BS BC846 Infineon BC846-BC850 NA MARKING SOT23 NPN BC846B SOT23 BC846B E6327 BC857 st MV SOT23 BC857 BC858

    top marking 1B sot23

    Abstract: top marking 3c sot23 BC847, 215 sot323 marking code A.C 1BC847BL3 2Cs sot23
    Text: BC847.-BC850. NPN Silicon AF Transistors • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BC857.-BC860. PNP • Pb-free (RoHS compliant) package


    Original     		PDF BC847. -BC850. BC857. -BC860. Q1011) 1BC847BL3 BC847A BC847B BC847BL3* BC847BW top marking 1B sot23 top marking 3c sot23 BC847, 215 sot323 marking code A.C 1BC847BL3 2Cs sot23

    1B marking

    Abstract: No abstract text available
    Text: BC846.-BC850. NPN Silicon AF Transistors • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BC856.-BC860. PNP • Pb-free (RoHS compliant) package1)


    Original     		PDF BC846. -BC850. BC856. -BC860. BC846A BC846B BC846BW BC847A 1B marking

    BC846 Infineon

    Abstract: BC847BL3 bc846 base resistance for SOT23 BC 945 BC847BF marking 2Gs 1bs sot323 BC 945 p marking 1F SOT323
    Text: BC846.-BC850. NPN Silicon AF Transistors • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BC856.-BC860. PNP • Pb-free (RoHS compliant) package 1)


    Original     		PDF BC846. -BC850. BC856. -BC860. BC846A BC846B BC846BW OT323 BC846 Infineon BC847BL3 bc846 base resistance for SOT23 BC 945 BC847BF marking 2Gs 1bs sot323 BC 945 p marking 1F SOT323

    BC846 Infineon

    Abstract: 1bs sot323 marking 1F SOT323 BC846 BC846A BC846B BC846BW BC847A BC847B BC850
    Text: BC846.-BC850. NPN Silicon AF Transistors • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BC856.-BC860. PNP • Pb-free (RoHS compliant) package 1)


    Original     		PDF BC846. -BC850. BC856. -BC860. BC846A BC846B BC846BW OT323 BC846 Infineon 1bs sot323 marking 1F SOT323 BC846 BC846A BC846B BC846BW BC847A BC847B BC850

    BC 945

    Abstract: BC847F-BC850F BC847 SOT23 BF850 marking code marking CODE 1BS 1bs sot323 BC849CW G t marking SOT323 marking 1F SOT323
    Text: BC846.-BC850. NPN Silicon AF Transistors • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BC856.-BC860. PNP 1 2006-09-19


    Original     		PDF BC846. -BC850. BC856. -BC860. BC846A BC846B BC846BW OT323 BC 945 BC847F-BC850F BC847 SOT23 BF850 marking code marking CODE 1BS 1bs sot323 BC849CW G t marking SOT323 marking 1F SOT323

    bf850

    Abstract: marking CODE 1BS BC846-BC850 BC847FB marking 1ks 1bs sot323 1Bs sot-23 marking 1F SOT323 BC846 BC846B
    Text: BC846.-BC850. NPN Silicon AF Transistors • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BC856.-BC860. PNP • Pb-free (RoHS compliant) package 1)


    Original     		PDF BC846. -BC850. BC856. -BC860. BC846A BC846B BC846BW OT323 bf850 marking CODE 1BS BC846-BC850 BC847FB marking 1ks 1bs sot323 1Bs sot-23 marking 1F SOT323 BC846 BC846B

    Untitled

    Abstract: No abstract text available
    Text: _ BC849 BC850 / SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in a plastic SOT-23 package. QUICK REFERENCE D A T A BC849 Collector-em itter voltage VgE = 0 Collector-em itter voltage (open base) BC850 V CES max.


    OCR Scan     		PDF BC849 BC850 OT-23 BC849B BC850B BC849C BC850C

    bc850

    Abstract: No abstract text available
    Text: BC849 BC850 SILICON PLANAR EPITAXIAL TRANSISTORS N-P N transistors in a plastic SO T-23 package. Q U IC K R E F E R E N C E D A T A BC849 BC850 V CES max. 30 50 v CEO max. 30 45 C o lle ctor cu rre n t peak value 'CM max. 200 200 T ota l power dissipation up to T am fj = 25 °C


    OCR Scan     		PDF BC849 BC850 BC850 BC849B BC850B

    BC850C

    Abstract: NB SOT-23 NPN BC849 BC849B BC849C BC850 BC850B BC850C equivalent
    Text: 7110ÖPb 00bö42fl 2ST • P H I N BC849 BC850 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in a plastic SOT-23 package. QUICK REFERENCE DATA BC849 BC850 Collector-emitter voltage V gg = 0 V CES max. 30 50 V Collector-emitter voltage (open base)


    OCR Scan     		PDF 7110flBb BC849 BC850 OT-23 BC850 110fi2b BC850C NB SOT-23 NPN BC849B BC849C BC850B BC850C equivalent

    CMA102

    Abstract: marking 2gp BC849 BC849B BC849C BC850 BC850B BC850C silicon planar epitaxial transistors
    Text: • ^53*131 00244b2 4SI HIAPX BC849 BC850 b7E T> N AUER PHILIPS/DISCRETE SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in a plastic SOT-23 package. Q U IC K R E F E R E N C E D A T A BC849 C o lle c to r-e m itte r voltage V g E = C o lle c to r-e m itte r voltage (open base)


    OCR Scan     		PDF 00244b2 BC849 BC850 OT-23 OT-23. BC849 35MHz CMA102 marking 2gp BC849B BC849C BC850 BC850B BC850C silicon planar epitaxial transistors

    BCS49C

    Abstract: No abstract text available
    Text: BC849 BC850 SILICON PLANAR EPITAXIAL TRANSISTORS N -P -N transistors M arking BC849 * 2D BC849B = 2B BCS49C = 2C BC850 = 2H BC850B = 2F 8C850C = 2G PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0 2.8 0.14 0.48 •538 ! 3 2.6 Pin configuration 2.4 1 = BASE


    OCR Scan     		PDF BC849 BC850 BC849 BC849B BCS49C BC850B 8C850C BC850 BCS49C

    IC marking jw

    Abstract: BC849 BC849B BC849C BC850 BC850B BC850C
    Text: £ 3 0 3 3 *1 4 DÜÜÜ73T 4^=1 m BC849 BC850 SILICON PLANAR EPITAXIAL TRANSISTORS N -P -N transistors Marking BC849 = 2D BC849B = 2B BC849C = 2C BC850 = 2H BC850B = 2F 8C8S0C = 2G Pin configuration PA CKA GE O UTLIN E D ETAILS ALL D IM EN SIO N S IN mm _3.0_


    OCR Scan     		PDF BC849 BC850 BC849B BC849C BC850B 100frequency IC marking jw BC849 BC849B BC849C BC850 BC850B BC850C

    BC850

    Abstract: BC850B BCS49 BC849 BC849B BC849C BC850C 8C850
    Text: BC849 BC850 SILICON PLANAR EPITAXIAL TRANSISTORS N -P-N transistors Marking BC849 = 2D BC849B = 2B BC849C = 2C BC850 = 2H BC850B = 2F 8C850C = 2G Pin configuration PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm J5.0 2.8 0.14 0.48 0.38 2.6 2.4 1 = BASE 2 = EMITTER


    OCR Scan     		PDF BC849 BC850 BC849B BC849C BC850B 8C850C BC849 BC850 BC850B BCS49 BC849B BC849C BC850C 8C850

    Untitled

    Abstract: No abstract text available
    Text: BC849 BC850 SILICON PLANAR EPITAXIAL TRANSISTORS N - P - N transistors M a rk in g BC849 = 2D BC849B = 2B BC849C = 2C BC850 = 2H BC850B = 2F 8C850C = 2G PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN m m 3.0 2.8 0.48 - — s !^ _ P in c o n fig u ra tio n 2,6


    OCR Scan     		PDF BC849 BC850 BC849B BC849C BC850B 8C850C

    W15NA

    Abstract: No abstract text available
    Text: E3fl33T4 DÜ OÜTBT W BC849 BC850 SILICON PLANAR EPITAXIAL TRANSISTORS N -P-N transistors Marking BC849 = 2D BC849B = 2B BC849C = 2C BC850 = 2H BC850B = 2F 8C850C = 2G Pin configuration PA CKA G E O U TLINE DETAILS A LL D IM ENSIO NS IN m m _3.0_ 2.8 0.14


    OCR Scan     		PDF E3fl33T4 BC849 BC850 BC849B BC849C BC850B 8C850C W15NA

    BAT 13003 D

    Abstract: SMBJ5.OCA bat 13003 em 434 CMHD3595 CMR1U-02M CMSD4448 CMPS5064 CMPSH-3SE CMSH3-40
    Text: index/Cross Reference Industry Part Number Central Part Number CMXD4448 1MN10 10BQ015 CMSH1-20ML CMR1U-02M 10MF2 10MQ040 CMSH1-40M 10MQ060 CMSH1-60M 1N6478 CMR1-02M 1N6479 CMR1-02M 1N6481 CMR1-04M 1N6482 CMR1-06M 1N6483 CMR1-10M CMR1-10M 1N6484 1S2835 CMPD2836


    OCR Scan     		PDF 30WQ03F 30WQ04F 30WQ05F 30WQ06F 50WF10F 50WF20F 50WF30F 50WF40F BAL99 BAR42 BAT 13003 D SMBJ5.OCA bat 13003 em 434 CMHD3595 CMR1U-02M CMSD4448 CMPS5064 CMPSH-3SE CMSH3-40