BC849BW |
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Diotec
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Surface mount Si-Epitaxial PlanarTransistors |
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Original |
PDF
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BC849BW |
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Infineon Technologies
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SOT323 package |
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Original |
PDF
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BC849BW |
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NXP Semiconductors
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BC849BW - NPN general purpose transistors - Complement: BC859BW ; fT min: 100 MHz; hFE max: 450 ; hFE min: 200 ; IC max: 100 mA; Polarity: NPN ; Ptot max: 200 mW; VCEO max: 30 V |
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Original |
PDF
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BC849BW |
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Philips Semiconductors
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NPN general purpose transistors |
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Original |
PDF
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BC849BW |
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Siemens
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NPN Silicon AF Transistor (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage) |
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Original |
PDF
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BC849BW,115 |
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NXP Semiconductors
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NPN general purpose transistors - Complement: BC859BW ; fT min: 100 MHz; hFE max: 450 ; hFE min: 200 ; IC max: 100 mA; Polarity: NPN ; Ptot max: 200 mW; VCEO max: 30 V; Package: SOT323 (SC-70); Container: Tape reel smd |
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Original |
PDF
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BC849BW,135 |
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NXP Semiconductors
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NPN general purpose transistors - Complement: BC859BW ; fT min: 100 MHz; hFE max: 450 ; hFE min: 200 ; IC max: 100 mA; Polarity: NPN ; Ptot max: 200 mW; VCEO max: 30 V; Package: SOT323 (SC-70); Container: Tape reel smd |
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Original |
PDF
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BC849BW RFG |
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Taiwan Semiconductor
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Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANSISTOR, NPN, 30V, 0.1A, 200A |
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Original |
PDF
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BC849BWT/R |
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NXP Semiconductors
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NPN general purpose transistors - Complement: BC859BW ; fT min: 100 MHz; hFE max: 450 ; hFE min: 200 ; IC max: 100 mA; Polarity: NPN ; Ptot max: 200 mW; VCEO max: 30 V |
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Original |
PDF
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BC849BWTR |
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Philips Semiconductors
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NPN general purpose transistor |
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Original |
PDF
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