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    BC847W Price and Stock

    Rochester Electronics LLC BC847W,135

    NOW NEXPERIA BC847W - SMALL SIGN
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    DigiKey BC847W,135 Bulk 650,000 13,172
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    Nexperia BC847W,115

    TRANS NPN 45V 0.1A SOT323
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    Rochester Electronics BC847W,115 388,000 1
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    Nexperia BC847W,135

    TRANS NPN 45V 0.1A SOT323
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    DigiKey BC847W,135 Cut Tape 7,798 1
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    Nexperia BC847W-QX

    TRANS NPN 45V 0.1A SOT323
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    Nexperia BC847W-QF

    BC847W-Q/SOT323/SC-70
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    Rochester Electronics BC847W-QF 600,000 1
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    BC847W Datasheets (26)

    Part ECAD Model Manufacturer Description Curated Type PDF
    BC847W Diotec Surface mount Si-Epitaxial PlanarTransistors Original PDF
    BC847W Galaxy Semi-Conductor Holdings NPN Silicon Epitaxial Planar Transistor Original PDF
    BC847W Infineon Technologies PNP Silicon AF Transistors Original PDF
    BC847W Kexin NPN General Purpose Transistor Original PDF
    BC847W Korea Electronics General Purpose Transistor Original PDF
    BC847W NXP Semiconductors 45 V, 100 mA NPN general-purpose transistors Original PDF
    BC847W NXP Semiconductors BC847W - 45 V, 100 mA NPN general-purpose transistors - Complement: BC857W ; fT min: 100 MHz; hFE max: 800 ; hFE min: 110 ; IC max: 100 mA; Polarity: NPN ; Ptot max: 200 mW; VCEO max: 45 V Original PDF
    BC847W Philips Semiconductors NPN General Purpose Transistor Original PDF
    BC847W Philips Semiconductors NPN general purpose transistors Original PDF
    BC847W Philips Semiconductors NPN GENERAL PURPOSE LOW-POWER TRANSISTORS Original PDF
    BC847W Philips Semiconductors NPN General Purpose Transistor Original PDF
    BC847W Siemens Cross Reference Guide 1998 Original PDF
    BC847W Siemens RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide Original PDF
    BC847W Sinyork Mini size of Discrete semiconductor elements Original PDF
    BC847W TY Semiconductor NPN General Purpose Transistor - SOT-323 Original PDF
    BC847W Korea Electronics General Purpose Transistor Scan PDF
    BC847W Korea Electronics EPITAXIAL PLANAR NPN TRANSISTOR Scan PDF
    BC847W,115 NXP Semiconductors 45 V, 100 mA NPN general-purpose transistors - Complement: BC857W ; fT min: 100 MHz; hFE max: 800 ; hFE min: 110 ; IC max: 100 mA; Polarity: NPN ; Ptot max: 200 mW; VCEO max: 45 V; Package: SOT323 (SC-70); Container: Tape reel smd Original PDF
    BC847W,115 NXP Semiconductors Transistors (BJT) - Single, Discrete Semiconductor Products, TRANSISTOR NPN 45V 100MA SOT323 Original PDF
    BC847W,135 NXP Semiconductors 45 V, 100 mA NPN general-purpose transistors - Complement: BC857W ; fT min: 100 MHz; hFE max: 800 ; hFE min: 110 ; IC max: 100 mA; Polarity: NPN ; Ptot max: 200 mW; VCEO max: 45 V; Package: SOT323 (SC-70); Container: Tape reel smd Original PDF

    BC847W Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    smd transistor marking 1B

    Abstract: SMD TRANSISTOR MARKING 1F smd TRANSISTOR 1D SMD TRANSISTOR MARKING 1M smd transistor marking 1E SMD Transistor 1f SMD TRANSISTOR MARKING 1D smd 1G SMD transistor MARKING 65 smd transistor 1g
    Text: Transistors IC SMD Type NPN General Purpose Transistor BC846W,BC847W,BC848W Features Low current max. 100 mA . Low voltage (max. 65 V). 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Symbol BC846W BC847W BC848W Unit Collector-base voltage Parameter


    Original     		PDF BC846W BC847W BC848W BC846W BC847W BC846AW BC846BW BC847AW smd transistor marking 1B SMD TRANSISTOR MARKING 1F smd TRANSISTOR 1D SMD TRANSISTOR MARKING 1M smd transistor marking 1E SMD Transistor 1f SMD TRANSISTOR MARKING 1D smd 1G SMD transistor MARKING 65 smd transistor 1g

    BC846AW

    Abstract: BC846BW BC846CW BC846W BC847W BC848W BC849W BC850AW BC850BW BC850W
    Text: BC846W…BC850W NPN Silicon Epitaxial Planar Transistor for general purpose and switching applications Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage BC846W BC847W BC848W BC849W BC850W VCBO 80 50 30 30 50 V Collector Emitter Voltage


    Original     		PDF BC846W. BC850W BC846W BC847W BC848W BC849W BC846AW BC846BW BC846CW BC846W BC847W BC848W BC849W BC850AW BC850BW BC850W

    transistor 1BT

    Abstract: 1Ft SOT323 1Ft TRANSISTOR transistor 1Ht BC847CW1GT transistor 1kt BC846W 1Bt 65 1kt marking code npn 1bt
    Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D102 BC846W; BC847W; BC848W NPN general purpose transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Mar 27 Philips Semiconductors Product specification


    Original     		PDF M3D102 BC846W; BC847W; BC848W OT323 BC856W, BC857W, transistor 1BT 1Ft SOT323 1Ft TRANSISTOR transistor 1Ht BC847CW1GT transistor 1kt BC846W 1Bt 65 1kt marking code npn 1bt

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors BC847PN SOT-363 COMPLEMENTARY TRANSISTOR NPN and PNP FEATURES z Epitaxial Die Construction z Two isolated NPN/PNP(BC847W+BC857W) Transistors in one package MAKING: 7P


    Original     		PDF OT-363 BC847PN OT-363 BC847W BC857W)

    BC846W

    Abstract: BC847W BC848W BC849W BC850W BC856AW BC856BW BC856W BC857AW BC860W
    Text: BC856W.BC860W PNP Silicon AF Transistors  For AF input stages and driver applications 3  High current gain  Low collector-emitter saturation voltage  Low noise between 30 Hz and 15 kHz  Complementary types: 2 BC846W, BC847W, BC848W 1 BC849W, BC850W NPN


    Original     		PDF BC856W. BC860W BC846W, BC847W, BC848W BC849W, BC850W VSO05561 BC856AW OT323 BC846W BC847W BC848W BC849W BC850W BC856AW BC856BW BC856W BC857AW BC860W

    847C

    Abstract: BC846W BC847W BC848W BC849W BC850W
    Text: DATA SHEET BC846W,BC847W,BC848W,BC849W,BC850W SERIES NPN GENERAL PURPOSE TRANSISTORS 30/45/65 Volts VOLTAGE 150 mWatts CURRENT SOT-323 Unit: inch mm FEATURES • NPN epitaxial silicon, planar design .087(2.2) .070(1.8) • Collector current IC = 100mA • Both normal and Pb free product are available :


    Original     		PDF BC846W BC847W BC848W BC849W BC850W OT-323 100mA OT-323, MIL-STD-202, 846AW 847C

    transistor 1bt

    Abstract: 1Ft SOT323 npn 1bt 1Ft TRANSISTOR marking code 1gt 1bt npn 1Bt 65 1Gt transistor marking code 1ft 1GT MARKING
    Text: BC846W SERIES BC847W SERIES SURFACE MOUNT NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BC846W and BC847W Series types are NPN Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a SUPERminiTM surface mount package,


    Original     		PDF BC846W BC847W OT-323 200Hz BC846BW BC847BW BC846AW BC847AW transistor 1bt 1Ft SOT323 npn 1bt 1Ft TRANSISTOR marking code 1gt 1bt npn 1Bt 65 1Gt transistor marking code 1ft 1GT MARKING

    Untitled

    Abstract: No abstract text available
    Text: BC856AW ~ BC859CW PNP GENERAL PURPOSE TRANSISTORS VOLTAGE POWER 30/45/65 Volts 200 mWatts FEATURES • General purpose amplifier applications • PNP epitaxial silicon, planar design • Collector current I C = 100mA • Complimentary NPN Devices:BC846W/BC847W/BC848W/


    Original     		PDF BC856AW BC859CW 100mA BC846W/BC847W/BC848W/ BC849W 2011/65/EU IEC61249 OT-323, MIL-STD-750, BC856AW

    BC846AW

    Abstract: BC846BW BC846CW BC846W BC847W BC848W BC849W BC850AW BC850BW BC850W
    Text: BC846W…BC850W NPN Silicon Epitaxial Planar Transistor for general purpose and switching applications Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage BC846W BC847W BC848W BC849W BC850W VCBO 80 50 30 30 50 V Collector Emitter Voltage


    Original     		PDF BC846W. BC850W BC846W BC847W BC848W BC849W BC846AW BC846BW BC846CW BC846W BC847W BC848W BC849W BC850AW BC850BW BC850W

    BC847W

    Abstract: No abstract text available
    Text: SEMICONDUCTOR BC847W MARKING SPECIFICATION USM PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 1E 1 2 Item Marking Description Device Mark 1 BC847W hFE Grade E A E , B(F), C(G) * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note) * Lot No. marking method


    Original     		PDF BC847W BC847W

    BC850AW

    Abstract: BC847W BC846AW BC846BW BC846W BC848W BC849W BC850BW BC850W
    Text: BC846W~850W NPN Silicon Epitaxial Planar Transistor for general purpose and switching applications SOT-323 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage BC846W BC847W BC848W BC849W BC850W VCBO 80 50


    Original     		PDF BC846W OT-323 BC846W BC847W BC848W BC849W BC850W BC850AW BC847W BC846AW BC846BW BC848W BC849W BC850BW BC850W

    transistor 1BT

    Abstract: transistor 1Ht 1Ft SOT323 1kt marking code BC846BW transistor 1BT 88 marking code 1gt TRANSISTOR 1gt BC846W BC847W
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 BC846W; BC847W; BC848W NPN general purpose transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Mar 27 Philips Semiconductors Product specification


    Original     		PDF M3D102 BC846W; BC847W; BC848W OT323 BC856W, BC857W, transistor 1BT transistor 1Ht 1Ft SOT323 1kt marking code BC846BW transistor 1BT 88 marking code 1gt TRANSISTOR 1gt BC846W BC847W

    BC847AW

    Abstract: BC847BW BC847CW BC847W Transistor MARKING CODE AW
    Text: BC847W NPN General Purpose Transistor FEATURES • Ideally suited for automatic insertion • For Switching and AF Amplifier Applications MECHANICAL DATA • Case: SOT-323 Plastic • Case material: “Green” molding compound, UL flammability classification 94V-0, No Br. Sb. CI


    Original     		PDF BC847W OT-323 2002/95/EC BC847AW BC847BW BC847CW BC847W Transistor MARKING CODE AW

    200mWatts

    Abstract: transistor 56B marking
    Text: BC856AW ~ BC859CW PNP GENERAL PURPOSE TRANSISTORS VOLTAGE CURRENT 30/45/65 Volts 200 mWatts 0.004 0.10 MIN. • General purpose amplifier applications • PNP epitaxial silicon, planar design • Collector current I C = 100mA • Complimentary (NPN) Devices:BC846W/BC847W/BC848W/


    Original     		PDF BC856AW BC859CW 100mA BC846W/BC847W/BC848W/ BC849W 2002/95/EC IEC61249 OT-323, MIL-STD-750, BC856AW 200mWatts transistor 56B marking

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors BC847PN SOT-363 COMPLEMENTARY TRANSISTOR NPN and PNP FEATURES z Epitaxial Die Construction z Two isolated NPN/PNP(BC847W+BC857W) Transistors in one package MAKING: 7P


    Original     		PDF OT-363 BC847PN OT-363 BC847W BC857W) -10mA -100mA -10mA

    Untitled

    Abstract: No abstract text available
    Text: BC847W NPN General Purpose Transistor FEATURES • Ideally suited for automatic insertion • For Switching and AF Amplifier Applications MECHANICAL DATA • Case: SOT-323 Plastic • Lead Free in RoHS 2002/95/EC Compliant Maximum Ratings @ TA = 25℃ Characteristic


    Original     		PDF BC847W OT-323 2002/95/EC 100MHz 200Hz Jun-2009, KSNR07 BC847AW BC847BW

    BC transistor series

    Abstract: BC849W BC856W BC857W BC858W BC859W transistor BC SERIES
    Text: BC856W,BC857W,BC858W,BC859W SERIES PNP GENERAL PURPOSE TRANSISTORS VOLTAGE 200 mWatts CURRENT 30/45/65 Volts SOT-323 Unit: inch mm FEATURES .087(2.2) .070(1.8) • Collector current IC = 100mA • Complimentary (NPN) Devices:BC846W/BC847W/BC848W/ BC849W Series


    Original     		PDF BC856W BC857W BC858W BC859W OT-323 100mA BC846W/BC847W/BC848W/ BC849W 2002/95/EC OT-323, BC transistor series transistor BC SERIES

    Untitled

    Abstract: No abstract text available
    Text: BC856W.BC860W PNP Silicon AF Transistors  For AF input stages and driver applications 3  High current gain  Low collector-emitter saturation voltage  Low noise between 30 Hz and 15 kHz  Complementary types: 2 BC846W, BC847W, BC848W 1 BC849W, BC850W NPN


    Original     		PDF BC856W. BC860W BC846W, BC847W, BC848W BC849W, BC850W VSO05561 BC856AW BC856BW

    TRANSISTOR SMD MARKING CODE p1

    Abstract: TRANSISTOR SMD CODE PACKAGE SOT323 TRANSISTOR SMD MARKING CODE d2 TRANSISTOR SMD MARKING CODE ce TRANSISTOR SMD MARKING CODE oc smd transistor marking code P MARKING CODE SMD IC TRANSISTOR SMD MARKING CODE 1l SMD TRANSISTOR MARKING 1B SMD TRANSISTOR MARKING 28
    Text: COMCHIP Small Signal Transistor SMD Diodes Specialist BC846AW-G Thru. BC848CW-G NPN RoHS Device Features -Power dissipation O PCM: 0.15W (@TA=25 C) -Collector current ICM: 0.1A -Collector-base voltage VCBO: BC846W=80V BC847W=50V BC848W=30V -Operating and storage junction temperature


    Original     		PDF BC846AW-G BC848CW-G BC846W BC847W BC848W OT-323 OT-323, MIL-STD-750, QW-BTR35 BC846AW-G TRANSISTOR SMD MARKING CODE p1 TRANSISTOR SMD CODE PACKAGE SOT323 TRANSISTOR SMD MARKING CODE d2 TRANSISTOR SMD MARKING CODE ce TRANSISTOR SMD MARKING CODE oc smd transistor marking code P MARKING CODE SMD IC TRANSISTOR SMD MARKING CODE 1l SMD TRANSISTOR MARKING 1B SMD TRANSISTOR MARKING 28

    Untitled

    Abstract: No abstract text available
    Text: BC856AW ~ BC859CW PNP GENERAL PURPOSE TRANSISTORS VOLTAGE CURRENT 30/45/65 Volts 200 mWatts 0.004 0.10 MIN. • General purpose amplifier applications • PNP epitaxial silicon, planar design • Collector current I C = 100mA • Complimentary (NPN) Devices:BC846W/BC847W/BC848W/


    Original     		PDF BC856AW BC859CW 100mA BC846W/BC847W/BC848W/ BC849W 2002/95/EC OT-323, MIL-STD-750, BC856AW BC856BW

    transistor 1BT

    Abstract: 1Gt transistor 1bt npn 1Ft SOT323 npn 1bt 1bt transistor marking code 1gt 1Ft TRANSISTOR 1gt MARKING TRANSISTOR 1gt
    Text: Central BC846W SERIES BC847W SERIES TM Semiconductor Corp. SURFACE MOUNT SUPERminiTM NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR BC846W and BC847W Series types are NPN Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a SUPERminiTM surface


    Original     		PDF BC846W BC847W OT-323 100MHz 200Hz BC846AW BC847AW transistor 1BT 1Gt transistor 1bt npn 1Ft SOT323 npn 1bt 1bt transistor marking code 1gt 1Ft TRANSISTOR 1gt MARKING TRANSISTOR 1gt

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification NPN general purpose transistors BC846W; BC847W FEATURES PINNING • Low current max. 100 mA PIN • Low voltage (max. 65 V). APPLICATIONS DESCRIPTION 1 base 2 emitter 3 collector • General purpose switching and amplification.


    OCR Scan     		PDF BC846W; BC847W OT323 BC856W BC857W. BC846W BC847AW BC846AW BC847BW BC846BW

    marking code 1gt

    Abstract: transistor marking 1Dt transistor 1kt 1Ft SOT323 1Gt transistor BC847CW pin 1Ft TRANSISTOR 1GT MARKING 1Gt 27 marking code
    Text: Philips Semiconductors Product specification NPN general purpose transistors FEATURES BC846W; BC847W; BC848W PINNING • Low current max. 100 mA PIN • Low voltage (max. 65 V). 1 APPLICATIONS DESCRIPTION base 2 emitter 3 collector • General purpose switching and amplification.


    OCR Scan     		PDF BC846W; BC847W; BC848W OT323 BC856W, BC857W, BC858W. BC846W BC846AW BC846BW marking code 1gt transistor marking 1Dt transistor 1kt 1Ft SOT323 1Gt transistor BC847CW pin 1Ft TRANSISTOR 1GT MARKING 1Gt 27 marking code

    bcs47

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification NPN general purpose transistor FEATURES BC846W; BC847W; BC848W PIN CONFIGURATION • S- mini package. DESCRIPTION NPN transistor in a plastic SOT323 package. e M BBOÌ2 PINNING - SOT323 PIN DESCRIPTION 1 base 2


    OCR Scan     		PDF BC846W; BC847W; BC848W OT323 MBC870 BC846W: BC846AW BC846BW BC847W: bcs47