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    BC638 TRANSISTOR PNP Search Results

    BC638 TRANSISTOR PNP Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
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    BC638 TRANSISTOR PNP Price and Stock

    onsemi BC638

    Trans GP BJT PNP 60V 0.5A 3-Pin TO-92 Bulk
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com BC638 7,874
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    • 10000 $0.047
    		Buy Now

    BC638 TRANSISTOR PNP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BC638

    Abstract: transistor bc638 BC637 BC638BU BC638TA BC638TF BC638TFR Bc638 transistor PNP
    Text: BC638 PNP Epitaxial Silicon Transistor BC638 PNP Epitaxial Silicon Transistor Switching and Amplifier Applications • Complement to BC637 TO-92 1 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings T a Symbol = 25°C unless otherwise noted Parameter


    Original     		PDF BC638 BC638 BC637 transistor bc638 BC637 BC638BU BC638TA BC638TF BC638TFR Bc638 transistor PNP

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR BC638 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT TRANSISTORS. FEATURES 2000. 10. 2 Revision No : 0 1/1


    Original     		PDF BC638

    BC640

    Abstract: bc636 bc638 bc636 transistor bc640 pnp bc640 transistor Bc638 transistor PNP
    Text: BC636/BC638/BC640 Transistor PNP TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features — High current transistors MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO Parameter Collector-Base Voltage Collector-Emitter Voltage Value Units -45 BC636


    Original     		PDF BC636/BC638/BC640 BC636 BC638 BC640 bc636 transistor bc640 pnp bc640 transistor Bc638 transistor PNP

    BC640

    Abstract: bc636 BC638 transistor bC636 BC636-10 BC636-16 BC638-16 BC640-16 bc638 transistor
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC636,BC638,BC640 TRANSISTOR PNP TO-92 FEATURES High current transistors 1. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted) 2. COLLECTOR Symbol VCBO VCEO Parameter


    Original     		PDF BC636 BC638 BC640 BC636 BC638 150mA BC640 transistor bC636 BC636-10 BC636-16 BC638-16 BC640-16 bc638 transistor

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC636,BC638,BC640 TRANSISTOR PNP TO-92 FEATURES High current transistors 1. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) 2. COLLECTOR Symbol VCBO VCEO Parameter


    Original     		PDF BC636 BC638 BC640 BC636 BC638 150mA

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR BC638 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT TRANSISTORS. B C FEATURES A ・Complementary to BC637. N E K SYMBOL RATING UNIT Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCEO -60 V Emitter-Base Voltage VEBO


    Original     		PDF BC638 BC637. -10mA, -150mA -500mA, -50mA -500mA -50mA, 100MHz Width300

    BC637

    Abstract: BC638
    Text: SEMICONDUCTOR BC638 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT TRANSISTORS. B C FEATURES A ᴌComplementary to BC637. N E K MAXIMUM RATING Ta=25ᴱ J SYMBOL RATING UNIT Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCEO -60


    Original     		PDF BC638 BC637. -150mA -500mA, -50mA -500mA -50mA, 100MHz BC637 BC638

    BC637

    Abstract: BC638
    Text: SEMICONDUCTOR BC638 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT TRANSISTORS. B C FEATURES A Complementary to BC637. N E K J SYMBOL RATING UNIT Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCEO -60 V Emitter-Base Voltage VEBO


    Original     		PDF BC638 BC637. -150mA -500mA, -50mA -500mA -50mA, 100MHz BC637 BC638

    transistor c63816

    Abstract: c63816 c638 transistor c63816 transistor BC638 14046 BC637 BC638-16 BCP52 BCX52
    Text: BC638; BCP52; BCX52 60 V, 1 A PNP medium power transistors Rev. 06 — 29 March 2006 Product data sheet 1. Product profile 1.1 General description PNP medium power transistor series. Table 1: Product overview Type number [1] Package NPN complement Philips


    Original     		PDF BC638; BCP52; BCX52 BC638 SC-43A BC637 BCP52 OT223 SC-73 BCP55 transistor c63816 c63816 c638 transistor c63816 transistor BC638 14046 BC637 BC638-16 BCP52 BCX52

    C63816

    Abstract: transistor c63816 c638 transistor cbc638 sot89 AE pnp c63816 transistor TO-92 plastic package transistors BC637 BC638 BC638-16
    Text: BC638; BCP52; BCX52 60 V, 1 A PNP medium power transistors Rev. 07 — 26 June 2007 Product data sheet 1. Product profile 1.1 General description PNP medium power transistor series. Table 1. Product overview Type number[1] Package NPN complement NXP JEITA


    Original     		PDF BC638; BCP52; BCX52 BC638 SC-43A BC637 BCP52 OT223 SC-73 BCP55 C63816 transistor c63816 c638 transistor cbc638 sot89 AE pnp c63816 transistor TO-92 plastic package transistors BC637 BC638-16

    BC638

    Abstract: BC638TA transistor bc638 BC637 BC638BU BC638TF BC638TFR Transistor Marking C3
    Text: BC638 PNP Epitaxial Silicon Transistor Switching and Amplifier Applications • Complement to BC637 TO-92 1 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings T a Symbol = 25°C unless otherwise noted Parameter Value Units -60 V VCER Collector-Emitter Voltage at RBE=1KΩ


    Original     		PDF BC638 BC637 BC638 BC638TA transistor bc638 BC637 BC638BU BC638TF BC638TFR Transistor Marking C3

    BC635 ECB

    Abstract: BC638
    Text: BC636/638/640 BC636/638/640 Switching and Amplifier Applications • Complement to BC635/637/639 TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCER VCES VCEO Parameter


    Original     		PDF BC636/638/640 BC635/637/639 BC636 BC638 BC640 BC635 ECB BC638

    24825

    Abstract: BC639 BC635 BC636 BC636-10 BC636-16 BC637 BC638 BC638-16 BC640
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC636; BC638; BC640 PNP medium power transistors Product specification Supersedes data of 1999 Apr 23 2001 Oct 10 Philips Semiconductors Product specification PNP medium power transistors BC636; BC638; BC640


    Original     		PDF M3D186 BC636; BC638; BC640 BC635, BC637 BC639. 24825 BC639 BC635 BC636 BC636-10 BC636-16 BC638 BC638-16 BC640

    BC640

    Abstract: BC636 BC635 BC636-10 BC636-16 BC637 BC638 BC639 SC-43A
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC636; BC638; BC640 PNP medium power transistors Product specification Supersedes data of 2001 Oct 10 2004 Oct 11 Philips Semiconductors Product specification PNP medium power transistors BC636; BC638; BC640


    Original     		PDF M3D186 BC636; BC638; BC640 BC635, BC637 BC639. BC640 BC636 BC635 BC636-10 BC636-16 BC638 BC639 SC-43A

    bc640

    Abstract: st bc638 BC635 application note bc638-10 BC635 BC636 BC636-10 BC637 BC638 BC639
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC636; BC638; BC640 PNP medium power transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Mar 07 Philips Semiconductors Product specification


    Original     		PDF M3D186 BC636; BC638; BC640 BC635, BC637 BC639. bc640 st bc638 BC635 application note bc638-10 BC635 BC636 BC636-10 BC638 BC639

    bc640

    Abstract: BC635 BC636 BC636-10 BC636-16 BC637 BC638 BC638-16 BC639 BC635 TRANSISTOR E C B
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC636; BC638; BC640 PNP medium power transistors Product specification Supersedes data of 1997 Mar 07 1999 Apr 23 Philips Semiconductors Product specification PNP medium power transistors BC636; BC638; BC640


    Original     		PDF M3D186 BC636; BC638; BC640 BC635, BC637 BC639. bc640 BC635 BC636 BC636-10 BC636-16 BC638 BC638-16 BC639 BC635 TRANSISTOR E C B

    BC637

    Abstract: BC638
    Text: SEMICONDUCTOR TECHNICAL DATA BC638 EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT TRANSISTORS. FEATURES • Complementary to BC637. MAXIMUM RATINGS Ta=25°C CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current


    OCR Scan     		PDF BC638 BC637. -10mA, -100juA, -10J/A, 150mA --500mA, -50mA --500mA -50mA, BC637 BC638

    Bc636

    Abstract: BC640 639 TRANSISTOR PNP BC638 pnp bc636 transistor
    Text: BC636/638/640 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • C o m p le m e n t to BC635/637/639 ABSOLUTE MAXIMUM RATINGS Ta= 25°C 1 Sym bol Characteristic C o llecto r Emitter Voltage: BC636 a t R BE = 1Kohm : BC638 V cE R : BC640


    OCR Scan     		PDF BC636/638/640 BC635/637/639 BC636 BC638 BC640 BC640 639 TRANSISTOR PNP BC638 pnp bc636 transistor

    bc638

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PNP medium power transistors BC636; BC638; BC640 FEATURES PINNING • High current max. 1 A PIN • Low voltage (max. 80 V). APPLICATIONS DESCRIPTION 1 base 2 collector 3 emitter • Audio and video amplifiers.


    OCR Scan     		PDF BC636; BC638; BC640 BC635, BC637 BC639. BC636 BC638 BC640

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PNP medium power transistors BC636; BC638; BC640 FEATURES PINNING • High current max. 1 A PIN • Low voltage (max. 80 V). APPLICATIONS DESCRIPTION 1 base 2 collector 3 emitter • Audio and video amplifiers.


    OCR Scan     		PDF BC636; BC638; BC640 BC635, BC637 BC639. BC636 BC638

    Untitled

    Abstract: No abstract text available
    Text: BC636/638/640 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS T O -9 2 • Complement to BC635/637/639 ABSOLUTE MAXIMUM RATINGS T.=25°C Characteristic C ollector Emitter Voltage: at R B E = 1Kohm : : Collector Emitter Voltage: : :


    OCR Scan     		PDF BC636/638/640 BC635/637/639 BC636 BC638 BC640

    Untitled

    Abstract: No abstract text available
    Text: BC636/638/640 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • Complement to BC635/637/639 ABSOLUTE MAXIMUM RATINGS T a = 25 1C Sym bol C h aracte ristic Collector Emitter Voltage at R b e = 1 Kohm Collector Emitter Voltage Collector Emitter Voltage


    OCR Scan     		PDF BC636/638/640 BC635/637/639 BC636 BC638 BC640

    Untitled

    Abstract: No abstract text available
    Text: PNP EPITAXIAL SILICON TRANSISTOR BC636/638/640 SWITCHING AND AMPLIFIER APPLICATIONS • C om plem ent to BC 635/637/639 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic C ollecto r E m itter Voltage atR eE=1Kohm C ollecto r E m itter Voltage C ollecto r E m itter Voltage


    OCR Scan     		PDF BC636/638/640 BC636 BC638 BC640

    Bc636

    Abstract: BC640 639 TRANSISTOR PNP BC635 BC638
    Text: PNP EPITAXIAL SILICON TRANSISTOR BC636/638/640 SWITCHING AND AMPLIFIER APPLICATIONS • C om plem ent to BC 635/637/639 T O -92 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic C ollecto r E m itter Voltage at R b e = 1 Kohm C ollecto r E m itter Voltage


    OCR Scan     		PDF BC636/638/640 BC635/637/639 BC636 BC638 BC640 BC640 639 TRANSISTOR PNP BC635 BC638