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    BC637 Price and Stock

    onsemi BC637

    TRANS NPN 60V 1A TO92
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    Avnet Americas BC637 Bulk 4 Weeks 6,411
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    Rochester Electronics BC637 2,000 1
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    onsemi BC637G

    TRANS NPN 60V 1A TO92
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    Rochester Electronics BC637G 4,525 1
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    ComSIT USA BC637G 5,000
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    onsemi BC637RL1G

    TRANS NPN 60V 1A TO92
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    Rochester Electronics BC637RL1G 182,750 1
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    onsemi BC637_D26Z

    TRANS NPN 60V 1A TO92-3
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    DigiKey BC637_D26Z Reel 2,000
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    onsemi BC637_L34Z

    TRANS NPN 60V 1A TO92-3
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    Find more BC637 price and stock on Findchips.com

    BC637 Datasheets (77)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BC637 Fairchild Semiconductor NPN Epitaxial Silicon Transistor Original PDF
    BC637 Fairchild Semiconductor NPN Epitaxial Silicon Transistor Original PDF
    BC637 Fairchild Semiconductor NPN EPITAXIAL SILICON TRANSISTOR Original PDF
    BC637 Korea Electronics TRANS GP BJT NPN 60V 0.5A 3TO-92 Original PDF
    BC637 Motorola High Current Transistors Original PDF
    BC637 On Semiconductor High Current Transistors Original PDF
    BC637 On Semiconductor High Current Transistor Original PDF
    BC637 Philips Semiconductors Small-signal Transistors Original PDF
    BC637 Philips Semiconductors NPN medium power transistors Original PDF
    BC637 Siemens NPN Silicon AF Transistor Original PDF
    BC637 Siemens Transistor / Diode Selection Guide Original PDF
    BC637 Siemens Cross Reference Guide 1998 Original PDF
    BC637 Siemens NPN Silicon AF Transistors (High current gain High collector current) Original PDF
    BC637 Siemens RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide Original PDF
    BC637 Various Russian Datasheets Transistor Original PDF
    BC637 Bharat Electronics Shortform Transistor Data Short Form PDF
    BC637 Continental Device India Semiconductor Device Data Book 1996 Scan PDF
    BC637 Crimson Semiconductor Transistor Selection Guide Scan PDF
    BC637 Korea Electronics General Purpose Transistor Scan PDF
    BC637 Micro Electronics Silicon Transistors Scan PDF

    BC637 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BC639

    Abstract: BC639-16 BC639G BC63 BC639 pin details BC637G BC639RL1G BC637 BC637RL1G bc637 050
    Text: BC637, BC639, BC639-16 High Current Transistors NPN Silicon Features • These are Pb−Free Devices* http://onsemi.com COLLECTOR 2 MAXIMUM RATINGS Rating Collector - Emitter Voltage Collector - Base Voltage Symbol BC637 BC639 BC637 BC639 Emitter - Base Voltage


    Original     		PDF BC637, BC639, BC639-16 BC637 BC639 BC637/D BC639 BC639-16 BC639G BC63 BC639 pin details BC637G BC639RL1G BC637 BC637RL1G bc637 050

    BC638

    Abstract: transistor bc638 BC637 BC638BU BC638TA BC638TF BC638TFR Bc638 transistor PNP
    Text: BC638 PNP Epitaxial Silicon Transistor BC638 PNP Epitaxial Silicon Transistor Switching and Amplifier Applications • Complement to BC637 TO-92 1 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings T a Symbol = 25°C unless otherwise noted Parameter


    Original     		PDF BC638 BC638 BC637 transistor bc638 BC637 BC638BU BC638TA BC638TF BC638TFR Bc638 transistor PNP

    bc639

    Abstract: BC637 BC635 TRANSISTOR E C B BC635 bc639 equivalent
    Text: ST BC635 / BC637 / BC639 NPN Silicon Epitaxial Planar Transistor Medium Power Transistors for driver stages of audio / video amplifiers 1.Emitter 2.Collector 3.Base TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings Ta = 25 OC Parameter


    Original     		PDF BC635 BC637 BC639 BC635 BC637 bc639 BC635 TRANSISTOR E C B bc639 equivalent

    bc639

    Abstract: BC635 TRANSISTOR E C B BC637 BC635 bc639 equivalent C 14M
    Text: ST BC635 / BC637 / BC639 NPN Silicon Epitaxial Planar Transistor Switching and amplifier application On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings Ta = 25 oC


    Original     		PDF BC635 BC637 BC639 BC635 BC637 bc639 BC635 TRANSISTOR E C B bc639 equivalent C 14M

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR BC638 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT TRANSISTORS. B C FEATURES A ・Complementary to BC637. N E K SYMBOL RATING UNIT Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCEO -60 V Emitter-Base Voltage VEBO


    Original     		PDF BC638 BC637. -10mA, -150mA -500mA, -50mA -500mA -50mA, 100MHz Width300

    bc639

    Abstract: BC63x BC639-16ZL1 BC637
    Text: BC635, BC637, BC639, BC639-16 High Current Transistors NPN Silicon Features http://onsemi.com • Pb−Free Package is Available* COLLECTOR 2 3 BASE MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage BC635 BC637 BC639 Collector-Base Voltage BC635 BC637


    Original     		PDF BC635, BC637, BC639, BC639-16 BC635 BC637 BC639 BC63x BC639-16ZL1

    bc639

    Abstract: BC637 BC635 BC635 TRANSISTOR E C B
    Text: ST BC635 / BC637 / BC639 NPN Silicon Epitaxial Planar Transistor Switching and amplifier application On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings Ta = 25 oC


    Original     		PDF BC635 BC637 BC639 BC635 BC637 bc639 BC635 TRANSISTOR E C B

    BC637

    Abstract: BC638
    Text: SEMICONDUCTOR BC638 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT TRANSISTORS. B C FEATURES A ᴌComplementary to BC637. N E K MAXIMUM RATING Ta=25ᴱ J SYMBOL RATING UNIT Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCEO -60


    Original     		PDF BC638 BC637. -150mA -500mA, -50mA -500mA -50mA, 100MHz BC637 BC638

    bc639

    Abstract: BC635 BC637 bc639 equivalent bc635 datasheet BC635 TRANSISTOR E C B BC639 datasheet transistor bc639 driver transistor hfe 60 BC639 collector
    Text: ST BC635 / BC637 / BC639 NPN Silicon Epitaxial Planar Transistor Medium Power Transistors for driver stages of audio / video amplifiers 1.Emitter 2.Base 3.Collector TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings Ta = 25 OC Parameter


    Original     		PDF BC635 BC637 BC639 BC635 BC637 bc639 bc639 equivalent bc635 datasheet BC635 TRANSISTOR E C B BC639 datasheet transistor bc639 driver transistor hfe 60 BC639 collector

    c63716

    Abstract: transistor c63716 C637 C-63716 BC637 BC637-16 BC638 BCP52 BCP55 BCX52
    Text: BC637; BCP55; BCX55 60 V, 1 A NPN medium power transistors Rev. 07 — 25 June 2007 Product data sheet 1. Product profile 1.1 General description NPN medium power transistor series. Table 1. Product overview Type number[1] Package PNP complement NXP JEITA


    Original     		PDF BC637; BCP55; BCX55 BC637 SC-43A BC638 BCP55 OT223 SC-73 BCP52 c63716 transistor c63716 C637 C-63716 BC637-16 BC638 BCP52 BCP55 BCX52

    bc639

    Abstract: BC635 BC637
    Text: ST BC635 / BC637 / BC639 NPN Silicon Epitaxial Planar Transistor Switching and amplifier application On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings Ta = 25 oC


    Original     		PDF BC635 BC637 BC639 BC635 BC637 bc639

    BC635 TRANSISTOR E C B

    Abstract: BC635 BC635-10 BC636 BC637 BC637-10 BC638 BC639 BC640 BC635 application note
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC635; BC637; BC639 NPN medium power transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Mar 12 Philips Semiconductors Product specification


    Original     		PDF M3D186 BC635; BC637; BC639 BC636, BC638 BC640. BC635 TRANSISTOR E C B BC635 BC635-10 BC636 BC637 BC637-10 BC639 BC640 BC635 application note

    BC327 SOT 23

    Abstract: PZT2222AT1 BC639 sot
    Text: Bipolar Transistors High Current Transistors w 500 mA V(BR)CEO IC mA Max Min Max MPSL51 100 600 40 250 BC489 BC490 80 1000 60 400 BC639 BC489A BC489B BC639−16 BC447 MPS8099 MPSA06 − MPS651 BC637 BC487 BC487B MPSA05 − BC640 BC490A BC490B BC640−16


    Original     		PDF BC489 BC639 BC489A BC489B BC639-16 BC447 MPS8099 MPSA06 MPS651 BC637 BC327 SOT 23 PZT2222AT1 BC639 sot

    2N2063A

    Abstract: 2N2082 Emihus 2n2007 esr bc63 2N2019 2N2097A 2n2114 2n2079 2n2102 motorola
    Text: LOW-POWER SILICON NPN Item Number Part Number 10 BC141-S BFW24 BC637 BFS61 2N489S BFX34 C266 C26S 2N1890 2N871 ~~rt:~OS 1S 20 BC44S BC44S-18 BC44S-S 2SC69 MPS-AOS MPS-AOS MPS-AOS PMBTASS ~~:0~~55 -2S 30 2N2060A 2N2060B 2N2SS2 2N2SS2A 2N2980 2N2980 2N2980 BFX99


    Original     		PDF BC141-S BFW24 BC637 BFS61 2N489S BFX34 2N1890 2N871 BC44S BC44S-18 2N2063A 2N2082 Emihus 2n2007 esr bc63 2N2019 2N2097A 2n2114 2n2079 2n2102 motorola

    BC639

    Abstract: BC639 18 BC635 BC635RL1 BC635ZL1 BC637 BC639-16 BC639RL1 BC639ZL1 bc637 050
    Text: BC635, BC637, BC639, BC639-16 High Current Transistors NPN Silicon http://onsemi.com COLLECTOR 2 MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage Value Unit VCEO BC635 BC637 BC639 Collector-Base Voltage 45 60 80 1 EMITTER VCBO BC635 BC637 BC639 Emitter-Base Voltage


    Original     		PDF BC635, BC637, BC639, BC639-16 BC635 BC637 BC639 BC639 BC639 18 BC635 BC635RL1 BC635ZL1 BC637 BC639-16 BC639RL1 BC639ZL1 bc637 050

    BC637

    Abstract: No abstract text available
    Text: SEMICONDUCTOR BC637 MARKING SPECIFICATION TO-92 PACKAGE 1. Marking method Laser Marking 816 1 2 K BC637 2. Marking 3 4 No. 2001. 3. 9 Item Marking Description Device Name BC637 BC637 Lot No. 816 8 Year 0~9 : 1900~1999 16 Week 16 : 16th Week KEC K KEC CORP.


    Original     		PDF BC637 BC637

    BC639

    Abstract: BC637 bc639 equivalent BC639-10 40250 Transistor TRANSISTOR BC639 bc637 transistor BC637-16 BC639 datasheet bc639-16 datasheet
    Text: BC635 / BC637 / BC639 NPN Type Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 FEATURE High current transistor 3.5±0.2 14.3±0.2 4.5±0.2 4.55±0.2 0.43+0.08 –0.07 0.46+0.1


    Original     		PDF BC635 BC637 BC639 BC637 BC635 50MHz BC639 bc639 equivalent BC639-10 40250 Transistor TRANSISTOR BC639 bc637 transistor BC637-16 BC639 datasheet bc639-16 datasheet

    transistor C639

    Abstract: transistor C635 c639 transistor C639 w
    Text: BC635/637/639 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • Complement to BC635/638/640 ABSOLUTE MAXIMUM RATINGS T, = 25°C Characteristic Collector Emitter Voltage: BC635 at R b e = 1Kohm : BC637 : BC639 Collector Emitter Voltage: BC635


    OCR Scan     		PDF BC635/637/639 BC635/638/640 BC635 BC637 BC639 transistor C639 transistor C635 c639 transistor C639 w

    BC838

    Abstract: BC640 bc636 npn transistor BC63 transistor BC639 BC635 BC636 BC637 BC638 BC639
    Text: B C 6 3 5 THRU’ B C 6 4 0 ÏA COMPLEMENTARY SILICON TRANSISTORS BC635, BC637, BC639 NPN and BC636, BC638, BC640 (PNP) are complementary silicon epitaxial planar transistors ‘ TO-92 for AF driver stages and amplifier applications up to 1A. ABSOLUTE MAXIMUM RATINGS


    OCR Scan     		PDF BC635, BC637, BC639 BC636, BC638, BC640 BC635 T0-92 BC838 BC640 bc636 npn transistor BC63 transistor BC639 BC636 BC637 BC638 BC639

    BC640

    Abstract: BC638 BC636 bc639 bc638-10 BC635 BC636-10 BC637 bc636 npn transistor Silicon Epitaxial Planar Transistor philips
    Text: N AUER PHILIPS/DISCRETE bTE T> • bbS3R31 □OSTS'ib 4=17 ■ APX BÜ636; BC638; BC640 A SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors in a plastic TO-92 envelope, primarily intended for use in driver stages of audio amplifiers. N-P-N complements are BC635, BC637 and BC639.


    OCR Scan     		PDF bbS3R31 BC636; BC638; BC640 BC635, BC637 BC639. BC636 BC638 BC640 bc639 bc638-10 BC635 BC636-10 bc636 npn transistor Silicon Epitaxial Planar Transistor philips

    se150

    Abstract: No abstract text available
    Text: SEMICONDUCTOR BC637 T E C H N I C A L DATA EPI TAXI AL PLANAR NPN T RA NS I ST OR HIGH C U R R E N T TRA N SISTO RS. FEA TU RES • C om plem entary to BC638. DIM M A X IM U M RATING Ta=25°C C H A R A C T E R IS T IC SY M B O L C o llector-B ase V oltage


    OCR Scan     		PDF BC637 BC638. 100/iA se150

    bc 148 npn transistor

    Abstract: NPN transistor bc 148 bc639 BC 148 transistor BC637
    Text: BC635; BC637; BC639 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in a plastic TO-92 package. PNP com plem ents are BC636, BC638 and BC640. QUICK REFERENCE D A T A BC635 BC637 BC639 100 Collector-base voltage open em itter v CBO max. 45 60 Collector-emitter voltage (open base)


    OCR Scan     		PDF BC635; BC637; BC639 BC636, BC638 BC640. BC635 BC637 BC639 bc 148 npn transistor NPN transistor bc 148 BC 148 transistor

    63516

    Abstract: 635-16 63916 Bc 649
    Text: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1997 Mar 12 Philips Sem iconductors 1999 Apr 23 PHILIPS Philips Semiconductors Product specification NPN medium power transistors BC635; BC637; BC639 FEATURES PINNING • High current max. 1 A


    OCR Scan     		PDF BC635; BC637; BC639 BC636, BC640. BC635 115002/00/03/pp8 63516 635-16 63916 Bc 649

    Untitled

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE b^E ]> • £,^53^31 □D27SC3D T7T ■ APX BC635; BC637; BC639 A SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in a plastic TO-92 envelope, primarily intended for use in driver stages of audio amplifiers. P-N-P complements are BC636, BC638 and BC640.


    OCR Scan     		PDF D27SC BC635; BC637; BC639 BC636, BC638 BC640. BC635 BC637