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    BC308 PNP TRANSISTOR Search Results

    BC308 PNP TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    BC308 PNP TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BC308

    Abstract: BC308B BC308 PNP transistor BC307A BC307 BC308A BC308 PNP transistor download datasheet Transistor BC307b transistor bc308 Bc308B, PNP
    Text: Central BC307 BC308 BC309 PNP SILICON TRANSISTOR TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR BC307, BC308, and BC309 types are PNP Silicon Transistors manufactured by the epitaxial planar process, designed for general purpose amplifier applications.


    Original     		PDF BC307 BC308 BC309 BC307, BC308, BC309 BC307) BC3050MHz BC308 BC308B BC308 PNP transistor BC307A BC307 BC308A BC308 PNP transistor download datasheet Transistor BC307b transistor bc308 Bc308B, PNP

    BC307

    Abstract: bc307 pnp BC238 datasheet BC239 transistor 309 BC309
    Text: BC307/308/309 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • LOW NOISE: BC309 TO-92 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Symbol Collector-Emitter Voltage : BC307 : BC308/309 Collector-Emitter Voltage : BC307 : BC308/309


    Original     		PDF BC307/308/309 BC309 BC307 BC308/309 BC307 bc307 pnp BC238 datasheet BC239 transistor 309 BC309

    bc307

    Abstract: BC308
    Text: BC307/308/309 PNP TO-92 Bipolar Transistors TO-92 1. COLLECTOR 2. BASE 3. EMITTER Features Amplifier dissipation NPN Silicon MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value IC BC307 BC308/309 Emitter-Base Voltage BC307 BC308/309 Collector Current -Continuous


    Original     		PDF BC307/308/309 BC307 BC308/309 -10mA, -100mA, BC308

    BC307B

    Abstract: BC307 BC307C 308C BC308 BC308C
    Text: BC307… BC308 PNP Silicon Amplifier Transistors On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings Ta=25oC Symbol BC307B,C BC308C Unit Collector Emitter Voltage


    Original     		PDF BC307. BC308 BC307B BC308C BC307 100MHz 200Hz BC307C 308C BC308 BC308C

    BC307

    Abstract: BC308 PNP transistor download datasheet BC308
    Text: BC307…BC308 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications 1. Collector 2. Base 3. Emitter TO-92 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter Symbol BC307 BC308 Unit Collector Base Voltage -VCBO 50 30


    Original     		PDF BC307. BC308 BC307 BC307 BC308 PNP transistor download datasheet BC308

    BC307B

    Abstract: BC307 BC308C 308C BC307C BC308
    Text: BC307… BC308 PNP Silicon Amplifier Transistors On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings Ta=25oC Symbol BC307B,C BC308C Unit Collector Emitter Voltage


    Original     		PDF BC307. BC308 BC307B BC308C BC307B BC307C BC307 100MHz 200Hz BC308C 308C BC308

    BC307B

    Abstract: BC307 BC307C BC308 PNP transistor download datasheet 308C BC308 BC308C
    Text: BC307… BC308 PNP Silicon Amplifier Transistors On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings Ta=25oC Symbol BC307B,C BC308C Unit Collector Emitter Voltage


    Original     		PDF BC307. BC308 BC307B BC308C BC307 100MHz 200Hz BC307C BC308 PNP transistor download datasheet 308C BC308 BC308C

    Untitled

    Abstract: No abstract text available
    Text: Small Signal Low Noise Transistors Part No. BC238 BC239 2N4124 2N5089 MPS6521 2N4123 2N5088 MPSA18 2N5210 2N5961 2N4410 BC308 BC309 2N4126 MPS6523 2N4125 PN4248 PN4250 2N5086 2N5087 20070515 Polarity NPN PNP V (A) hFE @ VCE & IC NF Max. Condition IC VCE


    Original     		PDF BC238 BC239 2N4124 2N5089 MPS6521 2N4123 2N5088 MPSA18 2N5210 2N5961

    transistor BC 458

    Abstract: Transistor BC 308C BC 2001 transistor BC307 BC307BTA BC237 bc309 BC308
    Text: BC307/308/309 BC307/308/309 Switching and Amplifier Applications • Low Noise: BC309 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCES VCEO Parameter Collector-Emitter Voltage


    Original     		PDF BC307/308/309 BC309 BC307 BC308/309 BC308 BC308ABU transistor BC 458 Transistor BC 308C BC 2001 transistor BC307 BC307BTA BC237 bc309

    BC308A

    Abstract: Transistor BC 308C BC307 Bc308
    Text: BC307/308/309 BC307/308/309 Switching and Amplifier Applications • Low Noise: BC309 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCES VCEO Parameter Collector-Emitter Voltage


    Original     		PDF BC307/308/309 BC309 BC307 BC308/309 BC308 BC308A Transistor BC 308C BC307

    bc307

    Abstract: bc308 BC309 BC308 PNP transistor transistor BC309 BC237 BC307 complementary
    Text: SEMICONDUCTOR BC307/8/9 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. LOW NOISE AMPLIFIER APPLICATION. B C FEATURES A High Voltage : BC307 VCEO=-45V. Low Noise : BC309 NF=0.2dB Typ. , 3dB(Max.) (VCE=-6V, IC=-0.1mA, f=1kHz). N


    Original     		PDF BC307/8/9 BC309 BC237/238/239. BC307 BC308 BC307 BC308 PNP transistor transistor BC309 BC237 BC307 complementary

    bc307

    Abstract: BC308 BC307 complementary
    Text: SEMICONDUCTOR BC307/8/9 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. LOW NOISE AMPLIFIER APPLICATION. B C FEATURES A ・High Voltage : BC307 VCEO=-45V. ・Low Noise : BC309 NF=0.2dB Typ. , 3dB(Max.) (VCE=-6V, IC=-0.1mA, f=1kHz).


    Original     		PDF BC307/8/9 BC309 BC237/238/239. BC307 BC308 BC307 complementary

    BC307

    Abstract: BC308 PNP transistor download datasheet BC308 transistor bc237 bc337 transistor BC309 BC309 bc3078 BC237
    Text: SEMICONDUCTOR BC307/8/9 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. LOW NOISE AMPLIFIER APPLICATION. B C FEATURES A ᴌHigh Voltage : BC307 VCEO=-45V. ᴌLow Noise : BC309 NF=0.2dB Typ. , 3dB(Max.) (VCE=-6V, IC=-0.1mA, f=1kHz).


    Original     		PDF BC307/8/9 BC307 BC309 BC237/238/239. BC307 BC308 BC309 BC308 PNP transistor download datasheet BC308 transistor bc237 bc337 transistor BC309 bc3078 BC237

    bc307

    Abstract: BC309 BC308
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC307/308/309 TRANSISTOR PNP TO-92 FEATURES Amplifier dissipation NPN Silicon 1. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) 2. BASE Symbol Parameter


    Original     		PDF BC307/308/309 BC307 BC308/309 -10mA, -100mA, bc307 BC309 BC308

    bc308

    Abstract: BC307 BC309
    Text: CHINA GUANGDONG DONGGUAN HAROM ELECTRONICS CO., LTD TO-92 Plastic-Encapsulate Transistors www.haorm.cn BC307/308/309 TRANSISTOR PNP TO-92 FEATURES Amplifier dissipation NPN Silicon 1. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) 2. BASE Symbol


    Original     		PDF BC307/308/309 BC307 BC308/309 -10mA, -100mA, bc308 BC307 BC309

    bc307bta

    Abstract: BC307
    Text: BC307/308/309 BC307/308/309 Switching and Amplifier Applications • Low Noise: BC309 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCES VCEO Parameter Collector-Emitter Voltage


    Original     		PDF BC307/308/309 BC309 BC307 BC308/309 BC307 bc307bta

    BC307

    Abstract: BC308 BC308 PNP transistor BC309 309 IC
    Text: BC307/308/309 BC307/308/309 Switching and Amplifier Applications • Low Noise: BC309 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCES VCEO Parameter Collector-Emitter Voltage


    Original     		PDF BC307/308/309 BC309 BC307 BC308/309 BC307 BC308 BC308 PNP transistor BC309 309 IC

    TYP 513 309

    Abstract: GE-514
    Text: BC307/308/309 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • L O W NOISE: BC309 A B S O LU T E MAXIMUM RATINGS TA= 2 5 t Sym bol C h aracte ristic Collector-Emitter Voltage :BC307 BC308/309 Collector-Emitter Voltage :BC307 BC308/309


    OCR Scan     		PDF BC307/308/309 BC309 BC307 BC308/309 BC307 BC3Q8/309 TYP 513 309 GE-514

    Untitled

    Abstract: No abstract text available
    Text: FORWARD UnEKHAUONAL ELECTRONICS LID. BC308 SEMICONDUCTOR TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS ABSOLUTE MAXIMUM RATINGS at Tamb=25'c C haracteristic Collector-Emitter Voltage Collector-Emitter Voltage B atter-B ase Voltage


    OCR Scan     		PDF BC308 -10uA -10mA -100mA -10inA 50MHz

    BC182 BC547

    Abstract: bc557 TO92C
    Text: Transistors For complete package outlines, refer to pages PO-1 through PO-6 General Purpose and Switching Type M axim um Ratings VCBO '< N=NPN P=PNP BC167 BC168 BC169 BC182 BC183 BC212 BC213 BC237 BC238 BC239 BC257 BC258 BC259 BC307 BC308 BC309 BC327 BC328


    OCR Scan     		PDF BC167 BC168 BC169 BC182 BC183 BC212 BC213 BC237 BC238 BC239 BC182 BC547 bc557 TO92C

    T BC309

    Abstract: No abstract text available
    Text: PNP EPITAXIAL SILICON TRANSISTOR BC307/308/309 SWITCHING AND AMPLIFIER APPLICATIONS . LOW NOISE: BC309 TO -92 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector-E m itter Voltage : BC307 : BC308/309 C ollector-E m itter Voltage : BC307


    OCR Scan     		PDF BC307/308/309 BC309 BC307 BC308/309 T BC309

    BC307

    Abstract: No abstract text available
    Text: BC307/308/309 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS T O -9 2 • LOW NOISE: BC309 ABSOLUTE MAXIMUM RATINGS Ta=25°C Symbol Characteristic Collector-Emitter Voltage :BC307 :BC308/309 Collector-Emitter Voltage :BC307 B C 3 0 8 /3 0 9


    OCR Scan     		PDF BC307/308/309 BC309 BC307 BC308/309 BC307

    BC307

    Abstract: BC308 BC309 bc3078 bc307 pnp BC308 PNP transistor BC307 complementary
    Text: SEMICONDUCTOR TECHNICAL DATA BC307/8/9 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. LOW NOISE AMPLIFIER APPLICATION. FEATURES • High Voltage : BC307 V Ceo= -45V . • Low Noise : BC309 NF=0.2dB Typ. , 3dB(Max.) (Vce=-6V, Ic=-0.1mA, f=lkHz).


    OCR Scan     		PDF BC307/8/9 BC307 BC309 BC237/238/239. BC308 BC309 BC308 bc3078 bc307 pnp BC308 PNP transistor BC307 complementary

    BC307

    Abstract: BC308 BC309 BC308 PNP transistor
    Text: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA BC307/8/9 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. LOW NOISE AMPLIFIER APPLICATION. FEATURES • High Voltage : BC307 V ceo= -4 5 V . • Low Noise : BC309 NF=0.2dB Typ. , 3dB(Max.)


    OCR Scan     		PDF BC307/8/9 BC307 BC309 BC237/238/239. BC308 BC309 BC308 BC308 PNP transistor