BC307A
Abstract: BC258C BC259 BC259B BC259C BC307 BC307B BC307C BC308 BC308A
Text: TO-92 Plastic Package Transistore PNP Maximum Ratings Type No. Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) Po 'c (W) (A) @Tc=25’( *CBO VCB ' c e s Vce (HA) (V) (MA) O (V) Max Max e 'c & ^CE (mA) 00 ^CE(SAT) V BE(SAT) 'c (V) Max
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BC258C
O-92-1
BC259
BC259B
BC259C
O-92-4
BC327-25
BC307A
BC307
BC307B
BC307C
BC308
BC308A
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BC238B npn
Abstract: BC337-25 BC415A CBE BC238B Bc238B, NPN BC337 CBE BC307A BC414B BC337-25 CBE BC238C
Text: S P R AGUE EconolineR Plast ic-M old ed Silicon S E P T R Transistors SMALL-SIGNAL AMPLIFIERS PRO-ELECTRON SERIES >- Pd BC Ta = 25°C V(BR) V(BR) V(BR) Conditions C BO CEO E BO Ic Q. (mW) Vo lts V olts Vo lts (m A) BC182A NPN 300 60 50 6 2 5 120 BC182B NPN
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BC182A
BC182B
BC212A
EC212B
BC237A
BC237B
BC238A
BC168A
BC168B
BC168C
BC238B npn
BC337-25
BC415A CBE
BC238B
Bc238B, NPN
BC337 CBE
BC307A
BC414B
BC337-25 CBE
BC238C
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Untitled
Abstract: No abstract text available
Text: COIÎL TO-92 Plastic Package Transistors PNP Maximum Ratings Type No. Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) Pd 'c (W) W @Tc=25°c 'c & (mA) @ Freq CDIL (MHz) (pF) Case Max Style @ V cbo ^CEO w Min (V) Min Min BC252C 30 25 5
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BC252C
BC256
BC256A
BC257
O-92-1
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8C317
Abstract: BC3098 bc2388 BC306 8C239 bc238 BC259C TO92
Text: DEVICE TYPE PA C K A G E B V C fO BVCBO B VE80 CBO # VCB IVI M M VI MIN BC237 BC237A BC237B BC238 BC238A N P N T O -92 N P N T O -92 N PN TO -92 N PN T O -9 2 N P N T O -92 (77 (77) (77) (77) (77) 45 45 45 20 20 50 50 50 30 30 BC2388 BC238C 8C239 BC239B
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BC237
BC237A
BC237B
BC238
BC238A
BC2388
BC238C
8C239
BC239B
BC239C
8C317
BC3098
BC306
BC259C TO92
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BC286
Abstract: 2N3252 2n55s1 2N3304 CS1602B bc3206 MPS9680T BC2388 MPS9681T MPS901
Text: CRIMSON SE M IC ON DU CT OR INC TT DE | SSlMGTt DDDDET3 □ 2514096 C R I M S O N S EM IC O N D U C T O R INC 99D D 00293 T - 2 - 7 - ó / By.CEO BVCBO BVEBO ICBO @ VCB HFE @ VC & iC v COB Vi MiN IV1M.N . MN i-Al MAh (V MIN MA> .V (-*• i|l w»> FT V-'l
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2S14096
2N1507
2N1566
2N1613
2NI711
2N1889
2N1890
2N1893
2N1973
2N1974
BC286
2N3252
2n55s1
2N3304
CS1602B
bc3206
MPS9680T
BC2388
MPS9681T
MPS901
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APY12
Abstract: BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367
Text: Semiconductors Semiconducteurs Halbleiter YEARLY EDITION - EDITION AN N UELLE - jX H R LIC H E AU SG A BE SIXTH EDITION SIXIEME EDITION SECHSTE AUSGABE 1978 Compiled by: Association Internationale PRO ELECTRON, Bd. de Waterloo, 103, B 1000 BRUSSELS Published by: JE. E KLUWER, B 2100 DEURNE-ANTWERP
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Edition-1978)
Ausgabe-1978)
BS3934
SO-26
OT-114
NS371
APY12
BYY32
ac176
AEY26
BAV77
bby20
BD545B
BAV27
transistor KT 209 M
AF367
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aeg diode Si 61 L
Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books
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11tA0A12
A025A
A0290
U0U55
A0291
A0292
A0305
A0306
A0A56
A0A59
aeg diode Si 61 L
aeg diodes D6
SGS Transistors
BC23B
SILICONIX U315
MZ306
BY126
bcv59
ac128
2N3680
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500MA
500MA
240MWF
240MWF
y51 h 120c
bd124
KT368
BFQ59
Silec Semiconductors
BD214
al103
AFY18
bd192
MM1711
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