BC108 IC HR Search Results

BC108 IC HR Result Highlights (5)

Part	Manufacturer	Description
D1U74T-W-1600-12-HB4AC	Murata Manufacturing Co Ltd	AC/DC 1600W, Titanium Efficiency, 74 MM , 12V, 12VSB, Inlet C20, Airflow Back to Front, RoHs
D1U54T-M-2500-12-HB4C	Murata Manufacturing Co Ltd	2.5KW 54MM AC/DC 12V WITH 12VDC STBY BACK TO FRONT AIR
MHM411-21	Murata Manufacturing Co Ltd	Ionizer Module, 100-120VAC-input, Negative Ion
SCL3400-D01-1	Murata Manufacturing Co Ltd	2-axis (XY) digital inclinometer
SCC433T-K03-004	Murata Manufacturing Co Ltd	2-Axis Gyro, 3-axis Accelerometer combination sensor

BC108 IC HR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
BC107 Abstract: BC108 BC107 equivalent BC107 DATASHEET bc108 equivalent of BC107 audio BC108 BC108 DATASHEET bc108 IC BC107 equivalent transistors Text: BC107 BC108 LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS DESCRIPTION The BC107 and BC108 are silicon planar epitaxial NPN transistors in TO-18 metal case. They are suitable for use in driver stages, low noise input stages and signal processing circuits of television reveivers. The PNP complemet for	Original	BC107 BC108 BC107 BC108 BC177. BC107 equivalent BC107 DATASHEET bc108 equivalent of BC107 audio BC108 BC108 DATASHEET bc108 IC BC107 equivalent transistors	PDF
BC107 characteristic Abstract: BC107 BC109 BC108 characteristic BC109 characteristic BC108 bc109 gain BC109 am Transistor BC107 Transistor BC109 Text: BC107, BC108, BC109 NPN Silicon Epitaxial Planar Transistors for switching and amplifier applications The transistors are subdivided into three groups A, B and C according to their current gain. Type BC107 is available in groups A and B, type BC108 in groups A, B and C, and type	OCR Scan	BC107, BC108, BC109 BC107 BC108 BC109 BC107 characteristic BC108 characteristic BC109 characteristic bc109 gain BC109 am Transistor BC107 Transistor BC109	PDF
BC107-BC108-BC109 Abstract: BC108-BC109 BC107 Tr bc107 bc109 gain bc109 bc108 TO-92 Text: SGS-THOMSON IMDœisillLICTIËiiMÛS BC107 BC108-BC109 LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS D E S C R IP T IO N The BC107, BC108 and BC109 are silicon planar epitaxial NPN transistors in TO-18 metal case.They are suitable for use in driver stages, low noise input	OCR Scan	BC107 BC108-BC109 BC107, BC108 BC109 BC177, BC178 BC179. BC107-BC108-BC109 BC108-BC109 BC107 Tr bc109 gain bc108 TO-92	PDF
BC107 Abstract: bc109 BC107-BC108-BC109 BC108 bc109 equivalent BC107 equivalent BC108-BC109 BC107 equivalent transistors BC107 DATASHEET bc108 equivalent Text: BC107 BC108-BC109 LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS DESCRIPTION The BC107, BC108 and BC109 are silicon planar epitaxial NPN transistors in TO-18 metal case.They are suitable for use in driver stages, low noise input stages and signal processing circuits of television	Original	BC107 BC108-BC109 BC107, BC108 BC109 BC177, BC178 BC179. BC108 BC107 BC107-BC108-BC109 bc109 equivalent BC107 equivalent BC108-BC109 BC107 equivalent transistors BC107 DATASHEET bc108 equivalent	PDF
Untitled Abstract: No abstract text available Text: N AMER PHILIPS/DISCRETE blE D • bfc.SB'lBl DDS7Mtm 733 « A P X BC107 to 109 A.F. SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in TO-18 metal envelopes w ith the collector connected to the case. The BC107 is prim arily intended fo r use in driver stages o f audio amplifiers and in signal processing	OCR Scan	BC107 BC108 BC109 BC107 bb53c DDS7S03	PDF
bc1078 Abstract: bc107 curves Characteristic curve BC107 Transistor BC1078 audio BC108 BC109 BC107 Transistor BC107 7z08 BC109 characteristic Text: I I N AUER P H I L I P S / D I S C R E T E b'lE » • bfc.SB'iai □DS7Mtm 733 M A P X BC107 to 109 A.F. SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in T O -18 metal envelopes w ith the collector connected to the case. The BC107 is primarily intended for use in driver stages of audio amplifiers and in signal processing	OCR Scan	BC107 BC108 BC109 BC109 7Z08551 bc1078 bc107 curves Characteristic curve BC107 Transistor BC1078 audio BC108 Transistor BC107 7z08 BC109 characteristic	PDF
PH BC107 Abstract: PH BC109 bc107 curves 7z08s BC109C D73 -Y BC108C BC107 BG10Z BC108B Text: BGIQZJd 109 T PHILIPS INTERNATIONAL SbE D • - 2 ^ 711002b G O m ^ M Ô A.F. SILICON PLANAR EPITAXIAL TRANSISTORS / MIS ■ PHIN ^ N-P-N transistors in TO-18 metal envelopes with the collector connected to the case.	OCR Scan	BG10ZÃ 711002b BC107 BC108 BC109 BC109 Collector-e07 PH BC107 PH BC109 bc107 curves 7z08s BC109C D73 -Y BC108C BG10Z BC108B	PDF
BC108A Abstract: bc109 Text: BC107 to 109 _ A .F. SILICON PLANAR EPITAXIAL TRANSISTORS General purpose NPN transistors in TO-18 metal packages w ith the collector connected to the case. PNP com plem ents are BC177, BC178 and BC179. QUICK REFERENCE D ATA Collector-emitter voltage VgE = 0	OCR Scan	BC107 BC177, BC178 BC179. BC107A BC107B BC108C BC108A BC108B bc109	PDF
BC238 h parameter Abstract: bc313 BC167 BC231 BC317 BC107 bc101 BC168 BC320 30Hz-15kHz Text: CRO BC107,8,9 BC167,8,9 BC237,8,9 BC317,8,9 THE ABOVE TYPES ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF SMALL SIGNAL AMPLIFIER STAGES AND DIRECT COUPLED CIRCUITS. BC107, 8, 9 are complementary to BC177, 8, 9. BC167, 8, 9 are complementary to BC257, 8, 9.	OCR Scan	BC107 BC167 BC237 BC317 BC107, BC177, BC167, BC257, BC237, BC307, BC238 h parameter bc313 BC231 bc101 BC168 BC320 30Hz-15kHz	PDF
BC140-16 Abstract: T053 BC109C NPN BC108A BC107A bc108 IC hr 2N6589 2N6590 2N6609 2N6653 Text: MAE D • 0133187 0 0 0 D M4 5 SEM ELABE G31 I S ML B SEMELAB LTD BI-POLAR TRANSISTO RS CECC AND HIGH REL & HIGH ENERGY Rel Code 2N6589 2N6590 2N6594 2N6609 2N6653 2N6654 2N6655 2N6671 2N6672 2N6673 2N6674 2N6675 2N6676 2N6677 2N6678 2N6686 2N6687 2N6688	OCR Scan	ai331fl7 0000MH5 2N6589 2N6590 2N6594 2N6609 2N6653 10min 2N6654 BC140-16 T053 BC109C NPN BC108A BC107A bc108 IC hr	PDF
BSX19 equivalent Abstract: BC350 bc107 BFW63 bcw17 SHORT DATA ON 2N744 transistor BC287 2N3020 BC451 2N2868 Text: TABLE OF CONTENTS INTRODUCTION ALPHANUMERICAL INDEX PRODUCT GUIDE SELECTION GUIDE CROSS REFERENCE HANDLING PRECAUTION QUALITY SURFACE MOUNTING CASE: SOT-23 DATASHEETS PACKAGES Page 4 5 7 9 14 24 25 30 35 419 INTRODUCTION This databook contains datasheets covering the range of discrete devices for small	OCR Scan	OT-23 BSX19 equivalent BC350 bc107 BFW63 bcw17 SHORT DATA ON 2N744 transistor BC287 2N3020 BC451 2N2868	PDF
bc178 Abstract: BC177 pnp transistor BC178-BC179 BC177 NPN transistor datasheet BC177 BC179 transistor datasheet NPN BC178 Transistor BC177 BC107 characteristic DATASHEET Transistor BC109 Text: BC177 BC178-BC179 LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS DESCRIPTION The BC177, BC178 and BC179 are silicon planar epitaxial PNP transistors in TO-18 metal case.They are suitable for use in driver audio stages, low noise input audio stages and as low power, high gain	Original	BC177 BC178-BC179 BC177, BC178 BC179 BC107, BC108 BC109. BC178 BC177 pnp transistor BC178-BC179 BC177 NPN transistor datasheet BC177 transistor datasheet NPN BC178 Transistor BC177 BC107 characteristic DATASHEET Transistor BC109	PDF
BC109 Abstract: BC107 BC103 BC108-BC109 BC108 BC 55 r7 BC108-BC bc109 gain BC-108-2 BC177 Text: T> 3QE m 7^ETS3? QQ3DÔSS S • ~ ^ F Vr,- - _ f= 7 S M ' S G G I S - T ^ © H O M S O - Z ° i N l L i © T f[R M a û S B C - [ 1 B C 1 0 7 1 0 8 - B C 1 0 9 “ S-TH0MS0N LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS	OCR Scan	BC107 BC108-BC109 BC107, BC108 BC109 BC177, BC178 BC179. BC107 BC103 BC108-BC109 BC 55 r7 BC108-BC bc109 gain BC-108-2 BC177	PDF
Katalog CEMI Abstract: OA81 diode byp 660-50r Philips BC147 p 181 transoptor Mullard oa81 Hitachi 12V MS 5A-181 OA81 BA102 diode telefunken hr 780 rds Text: WSTIJP W ydaw nictw a Przem yslu M aszynowego WEMA przekazujq uzytkow nikom branzow y katalog pt. E l e m e n t y pólp rz e w o d n i k o w e , zaw ierajqcy dokladne inform acje techniczne dotycz^ce elem entów pólprzew odnikow ych produkow anych w Polsce n a skal^ przem yslow ^. W szystkie w yroby	OCR Scan		PDF

motorola p1f Abstract: hie for bc547b BC237 transistor motorola 2n3053 Marking P1F 619 sc-59 P1F marking MARKING CODE Zi sot363 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Silicon Planar Epitaxial Transistor PZT2222AT1 Motorola Preferred Device This NPN Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for	Original	OT-223 PZT2907AT1 PZT2222AT1 inch/1000 PZT2222AT3 inch/4000 unit218A MSC1621T1 motorola p1f hie for bc547b BC237 transistor motorola 2n3053 Marking P1F 619 sc-59 P1F marking MARKING CODE Zi sot363	PDF
smd npn 2n2222 Abstract: bf471 BSR62 equivalent EQUIVALENT TRANSISTOR bc549c transistor bf 175 transistor bc547 PH in metal detector tunnel diode BSY95A BF470 BC200 Text: SM ALL-SIGNAL TRANSISTORS page Selection guide A udio and general purpose a p p lica tio n s. 5 HF applications.	OCR Scan	2PC1815L 2PC1815 10xx0. 7Z88986 smd npn 2n2222 bf471 BSR62 equivalent EQUIVALENT TRANSISTOR bc549c transistor bf 175 transistor bc547 PH in metal detector tunnel diode BSY95A BF470 BC200	PDF
BC237 Abstract: 2N2904 PNP Transistor Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistor MPS3906 PNP Silicon COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 CASE 29–04, STYLE 1 TO–92 TO–226AA MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO –40 Vdc Collector – Base Voltage	Original	MPS3906 226AA) 00218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 BC237 2N2904 PNP Transistor	PDF
BC547 hie hre hfe Abstract: hie for bc547b BC237 BC338 hie hre hfe sot-223 body marking A G Q E mps3638 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Switching Transistor PNP Silicon MPS3638A COLLECTOR 3 2 BASE 1 EMITTER MAXIMUM RATINGS 1 Rating Symbol Value Unit Collector – Emitter Voltage VCEO –25 Vdc Collector – Emitter Voltage VCES –25 Vdc Collector – Base Voltage	Original	MPS3638A 226AA) Junct218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 BC547 hie hre hfe hie for bc547b BC237 BC338 hie hre hfe sot-223 body marking A G Q E mps3638	PDF
2N3906 MOTOROLA Abstract: 2n3906 REPLACEMENT 2n3906 TRANSISTOR REPLACEMENT BC237 equivalent transistor 2N1711 2N3905 Equivalent 2N1893 equivalent applications of Transistor BC108 BC141 equivalent Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors 2N3905 2N3906* PNP Silicon *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 40 Vdc Collector – Base Voltage	Original	2N3905 2N3906* 226AA) Resist218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 2N3906 MOTOROLA 2n3906 REPLACEMENT 2n3906 TRANSISTOR REPLACEMENT BC237 equivalent transistor 2N1711 2N3905 Equivalent 2N1893 equivalent applications of Transistor BC108 BC141 equivalent	PDF
2n2904 2n2905 Abstract: BC237 BC547 hie hre hfe hie for bc547b K 2056 BC338 hie hre hfe TO-226-AE Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistor MPS3904 NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER MAXIMUM RATINGS 1 2 Rating Symbol Value Unit Collector – Emitter Voltage VCEO 40 Vdc Collector – Base Voltage VCBO 60 Vdc Emitter – Base Voltage	Original	MPS3904 226AA) MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 2n2904 2n2905 BC237 BC547 hie hre hfe hie for bc547b K 2056 BC338 hie hre hfe TO-226-AE	PDF
2N2222 MPS2222 npn transistor Abstract: 2N2222 MPS2222 DO204AA 2n3053 motorola BC237 MPS2222A mps2222 transistor mps2222a transistor mps2222a npn transistor Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors MPS2222 MPS2222A* NPN Silicon COLLECTOR 3 *Motorola Preferred Device 2 BASE 1 EMITTER MAXIMUM RATINGS Rating Symbol MPS2222 MPS2222A Unit Collector – Emitter Voltage VCEO 30 40 Vdc Collector – Base Voltage	Original	MPS2222 MPS2222A* MPS2222A 226AA) Re218A MSC1621T1 MSC2404 MSD1819A MV1620 2N2222 MPS2222 npn transistor 2N2222 MPS2222 DO204AA 2n3053 motorola BC237 mps2222 transistor mps2222a transistor mps2222a npn transistor	PDF
TRANSISTOR P2N2222A Abstract: BC237 bf422 transistor BC547 hie hre hfe TO-226-AE Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors P2N2222A NPN Silicon COLLECTOR 1 2 BASE 3 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 40 Vdc Collector – Base Voltage VCBO 75 Vdc Emitter – Base Voltage	Original	P2N2222A 226AA) Uni218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 TRANSISTOR P2N2222A BC237 bf422 transistor BC547 hie hre hfe TO-226-AE	PDF
hie for bc547b Abstract: bc109 2n2222a SOT223 BC237 MPS3563 2N2904 BF256 BSS89 APPLICATION BCY72 mps5771 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistor MPS6428 NPN Silicon COLLECTOR 3 2 BASE 1 1 EMITTER 2 3 CASE 29–04, STYLE 1 TO–92 TO–226AA MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 50 Vdc Collector – Base Voltage	Original	MPS6428 226AA) Unit218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 hie for bc547b bc109 2n2222a SOT223 BC237 MPS3563 2N2904 BF256 BSS89 APPLICATION BCY72 mps5771	PDF
bc2378 Abstract: box33c b0345 b0348 b0735 B0346 b073b B0736 b0737 B0633 Text: This Material Pro Electron Series Copyrighted 3> -i PRO ELECTRON SERIES Bipolar—see page 5-37 for JFET By Type No. Its BC107 Respective BC107A Case Styl« TO-18 TO-18 VCES* VC8 0 (VI Min 50 50 VCEO (V) Min V e BO (V) Min 45 6 45 6 'CES* 'CBO a V CB (Vi	OCR Scan	tS0113D J15511 SD1130 bc2378 box33c b0345 b0348 b0735 B0346 b073b B0736 b0737 B0633	PDF

BC108 IC HR Search Results

BC108 IC HR Result Highlights (5)

BC108 IC HR Datasheets Context Search

BC107

BC107 characteristic

BC107-BC108-BC109

BC107

Untitled

bc1078

PH BC107

BC108A

BC238 h parameter

BC140-16

BSX19 equivalent

bc178

BC109

Katalog CEMI

motorola p1f

smd npn 2n2222

BC237

BC547 hie hre hfe

2N3906 MOTOROLA

2n2904 2n2905

2N2222 MPS2222 npn transistor

TRANSISTOR P2N2222A

hie for bc547b

bc2378