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    BC108 IC HR Search Results

    BC108 IC HR Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    74HC4051FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL1G07FU Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Non-Inverter Buffer (Open Drain), USV, -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TB67H451AFNG Toshiba Electronic Devices & Storage Corporation Brushed Motor Driver/1ch/Vout(V)=50/Iout(A)=3.5 Visit Toshiba Electronic Devices & Storage Corporation

    BC108 IC HR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BC107

    Abstract: BC108 BC107 equivalent BC107 DATASHEET bc108 equivalent of BC107 audio BC108 BC108 DATASHEET bc108 IC BC107 equivalent transistors
    Text: BC107 BC108 LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS DESCRIPTION The BC107 and BC108 are silicon planar epitaxial NPN transistors in TO-18 metal case. They are suitable for use in driver stages, low noise input stages and signal processing circuits of television reveivers. The PNP complemet for


    Original     		PDF BC107 BC108 BC107 BC108 BC177. BC107 equivalent BC107 DATASHEET bc108 equivalent of BC107 audio BC108 BC108 DATASHEET bc108 IC BC107 equivalent transistors

    BC107

    Abstract: bc109 BC107-BC108-BC109 BC108 bc109 equivalent BC107 equivalent BC108-BC109 BC107 equivalent transistors BC107 DATASHEET bc108 equivalent
    Text: BC107 BC108-BC109 LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS DESCRIPTION The BC107, BC108 and BC109 are silicon planar epitaxial NPN transistors in TO-18 metal case.They are suitable for use in driver stages, low noise input stages and signal processing circuits of television


    Original     		PDF BC107 BC108-BC109 BC107, BC108 BC109 BC177, BC178 BC179. BC108 BC107 BC107-BC108-BC109 bc109 equivalent BC107 equivalent BC108-BC109 BC107 equivalent transistors BC107 DATASHEET bc108 equivalent

    bc178

    Abstract: BC177 pnp transistor BC178-BC179 BC177 NPN transistor datasheet BC177 BC179 transistor datasheet NPN BC178 Transistor BC177 BC107 characteristic DATASHEET Transistor BC109
    Text: BC177 BC178-BC179 LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS DESCRIPTION The BC177, BC178 and BC179 are silicon planar epitaxial PNP transistors in TO-18 metal case.They are suitable for use in driver audio stages, low noise input audio stages and as low power, high gain


    Original     		PDF BC177 BC178-BC179 BC177, BC178 BC179 BC107, BC108 BC109. BC178 BC177 pnp transistor BC178-BC179 BC177 NPN transistor datasheet BC177 transistor datasheet NPN BC178 Transistor BC177 BC107 characteristic DATASHEET Transistor BC109

    motorola p1f

    Abstract: hie for bc547b BC237 transistor motorola 2n3053 Marking P1F 619 sc-59 P1F marking MARKING CODE Zi sot363
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Silicon Planar Epitaxial Transistor PZT2222AT1 Motorola Preferred Device This NPN Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for


    Original     		PDF OT-223 PZT2907AT1 PZT2222AT1 inch/1000 PZT2222AT3 inch/4000 unit218A MSC1621T1 motorola p1f hie for bc547b BC237 transistor motorola 2n3053 Marking P1F 619 sc-59 P1F marking MARKING CODE Zi sot363

    BC237

    Abstract: 2N2904 PNP Transistor
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistor MPS3906 PNP Silicon COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 CASE 29–04, STYLE 1 TO–92 TO–226AA MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO –40 Vdc Collector – Base Voltage


    Original     		PDF MPS3906 226AA) 00218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 BC237 2N2904 PNP Transistor

    BC547 hie hre hfe

    Abstract: hie for bc547b BC237 BC338 hie hre hfe sot-223 body marking A G Q E mps3638
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Switching Transistor PNP Silicon MPS3638A COLLECTOR 3 2 BASE 1 EMITTER MAXIMUM RATINGS 1 Rating Symbol Value Unit Collector – Emitter Voltage VCEO –25 Vdc Collector – Emitter Voltage VCES –25 Vdc Collector – Base Voltage


    Original     		PDF MPS3638A 226AA) Junct218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 BC547 hie hre hfe hie for bc547b BC237 BC338 hie hre hfe sot-223 body marking A G Q E mps3638

    2N3906 MOTOROLA

    Abstract: 2n3906 REPLACEMENT 2n3906 TRANSISTOR REPLACEMENT BC237 equivalent transistor 2N1711 2N3905 Equivalent 2N1893 equivalent applications of Transistor BC108 BC141 equivalent
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors 2N3905 2N3906* PNP Silicon *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 40 Vdc Collector – Base Voltage


    Original     		PDF 2N3905 2N3906* 226AA) Resist218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 2N3906 MOTOROLA 2n3906 REPLACEMENT 2n3906 TRANSISTOR REPLACEMENT BC237 equivalent transistor 2N1711 2N3905 Equivalent 2N1893 equivalent applications of Transistor BC108 BC141 equivalent

    2n2904 2n2905

    Abstract: BC237 BC547 hie hre hfe hie for bc547b K 2056 BC338 hie hre hfe TO-226-AE
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistor MPS3904 NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER MAXIMUM RATINGS 1 2 Rating Symbol Value Unit Collector – Emitter Voltage VCEO 40 Vdc Collector – Base Voltage VCBO 60 Vdc Emitter – Base Voltage


    Original     		PDF MPS3904 226AA) MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 2n2904 2n2905 BC237 BC547 hie hre hfe hie for bc547b K 2056 BC338 hie hre hfe TO-226-AE

    2N2222 MPS2222 npn transistor

    Abstract: 2N2222 MPS2222 DO204AA 2n3053 motorola BC237 MPS2222A mps2222 transistor mps2222a transistor mps2222a npn transistor
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors MPS2222 MPS2222A* NPN Silicon COLLECTOR 3 *Motorola Preferred Device 2 BASE 1 EMITTER MAXIMUM RATINGS Rating Symbol MPS2222 MPS2222A Unit Collector – Emitter Voltage VCEO 30 40 Vdc Collector – Base Voltage


    Original     		PDF MPS2222 MPS2222A* MPS2222A 226AA) Re218A MSC1621T1 MSC2404 MSD1819A MV1620 2N2222 MPS2222 npn transistor 2N2222 MPS2222 DO204AA 2n3053 motorola BC237 mps2222 transistor mps2222a transistor mps2222a npn transistor

    TRANSISTOR P2N2222A

    Abstract: BC237 bf422 transistor BC547 hie hre hfe TO-226-AE
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors P2N2222A NPN Silicon COLLECTOR 1 2 BASE 3 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 40 Vdc Collector – Base Voltage VCBO 75 Vdc Emitter – Base Voltage


    Original     		PDF P2N2222A 226AA) Uni218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 TRANSISTOR P2N2222A BC237 bf422 transistor BC547 hie hre hfe TO-226-AE

    hie for bc547b

    Abstract: bc109 2n2222a SOT223 BC237 MPS3563 2N2904 BF256 BSS89 APPLICATION BCY72 mps5771
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistor MPS6428 NPN Silicon COLLECTOR 3 2 BASE 1 1 EMITTER 2 3 CASE 29–04, STYLE 1 TO–92 TO–226AA MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 50 Vdc Collector – Base Voltage


    Original     		PDF MPS6428 226AA) Unit218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 hie for bc547b bc109 2n2222a SOT223 BC237 MPS3563 2N2904 BF256 BSS89 APPLICATION BCY72 mps5771

    BC107 characteristic

    Abstract: BC107 BC109 BC108 characteristic BC109 characteristic BC108 bc109 gain BC109 am Transistor BC107 Transistor BC109
    Text: BC107, BC108, BC109 NPN Silicon Epitaxial Planar Transistors for switching and amplifier applications The transistors are subdivided into three groups A, B and C according to their current gain. Type BC107 is available in groups A and B, type BC108 in groups A, B and C, and type


    OCR Scan     		PDF BC107, BC108, BC109 BC107 BC108 BC109 BC107 characteristic BC108 characteristic BC109 characteristic bc109 gain BC109 am Transistor BC107 Transistor BC109

    BC107-BC108-BC109

    Abstract: BC108-BC109 BC107 Tr bc107 bc109 gain bc109 bc108 TO-92
    Text: SGS-THOMSON IMDœisillLICTIËiiMÛS BC107 BC108-BC109 LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS D E S C R IP T IO N The BC107, BC108 and BC109 are silicon planar epitaxial NPN transistors in TO-18 metal case.They are suitable for use in driver stages, low noise input


    OCR Scan     		PDF BC107 BC108-BC109 BC107, BC108 BC109 BC177, BC178 BC179. BC107-BC108-BC109 BC108-BC109 BC107 Tr bc109 gain bc108 TO-92

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE blE D • bfc.SB'lBl DDS7Mtm 733 « A P X BC107 to 109 A.F. SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in TO-18 metal envelopes w ith the collector connected to the case. The BC107 is prim arily intended fo r use in driver stages o f audio amplifiers and in signal processing


    OCR Scan     		PDF BC107 BC108 BC109 BC107 bb53c DDS7S03

    PH BC107

    Abstract: PH BC109 bc107 curves 7z08s BC109C D73 -Y BC108C BC107 BG10Z BC108B
    Text: BGIQZJd 109 T PHILIPS INTERNATIONAL SbE D • - 2 ^ 711002b G O m ^ M Ô A.F. SILICON PLANAR EPITAXIAL TRANSISTORS / MIS ■ PHIN ^ N-P-N transistors in TO-18 metal envelopes with the collector connected to the case.


    OCR Scan     		PDF BG10ZÃ 711002b BC107 BC108 BC109 BC109 Collector-e07 PH BC107 PH BC109 bc107 curves 7z08s BC109C D73 -Y BC108C BG10Z BC108B

    BC108A

    Abstract: bc109
    Text: BC107 to 109 _ A .F. SILICON PLANAR EPITAXIAL TRANSISTORS General purpose NPN transistors in TO-18 metal packages w ith the collector connected to the case. PNP com plem ents are BC177, BC178 and BC179. QUICK REFERENCE D ATA Collector-emitter voltage VgE = 0


    OCR Scan     		PDF BC107 BC177, BC178 BC179. BC107A BC107B BC108C BC108A BC108B bc109

    BC238 h parameter

    Abstract: bc313 BC167 BC231 BC317 BC107 bc101 BC168 BC320 30Hz-15kHz
    Text: CRO BC107,8,9 BC167,8,9 BC237,8,9 BC317,8,9 THE ABOVE TYPES ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF SMALL SIGNAL AMPLIFIER STAGES AND DIRECT COUPLED CIRCUITS. BC107, 8, 9 are complementary to BC177, 8, 9. BC167, 8, 9 are complementary to BC257, 8, 9.


    OCR Scan     		PDF BC107 BC167 BC237 BC317 BC107, BC177, BC167, BC257, BC237, BC307, BC238 h parameter bc313 BC231 bc101 BC168 BC320 30Hz-15kHz

    BC140-16

    Abstract: T053 BC109C NPN BC108A BC107A bc108 IC hr 2N6589 2N6590 2N6609 2N6653
    Text: MAE D • 0133187 0 0 0 D M4 5 SEM ELABE G31 I S ML B SEMELAB LTD BI-POLAR TRANSISTO RS CECC AND HIGH REL & HIGH ENERGY Rel Code 2N6589 2N6590 2N6594 2N6609 2N6653 2N6654 2N6655 2N6671 2N6672 2N6673 2N6674 2N6675 2N6676 2N6677 2N6678 2N6686 2N6687 2N6688


    OCR Scan     		PDF ai331fl7 0000MH5 2N6589 2N6590 2N6594 2N6609 2N6653 10min 2N6654 BC140-16 T053 BC109C NPN BC108A BC107A bc108 IC hr

    BSX19 equivalent

    Abstract: BC350 bc107 BFW63 bcw17 SHORT DATA ON 2N744 transistor BC287 2N3020 BC451 2N2868
    Text: TABLE OF CONTENTS INTRODUCTION ALPHANUMERICAL INDEX PRODUCT GUIDE SELECTION GUIDE CROSS REFERENCE HANDLING PRECAUTION QUALITY SURFACE MOUNTING CASE: SOT-23 DATASHEETS PACKAGES Page 4 5 7 9 14 24 25 30 35 419 INTRODUCTION This databook contains datasheets covering the range of discrete devices for small


    OCR Scan     		PDF OT-23 BSX19 equivalent BC350 bc107 BFW63 bcw17 SHORT DATA ON 2N744 transistor BC287 2N3020 BC451 2N2868

    BC109

    Abstract: BC107 BC103 BC108-BC109 BC108 BC 55 r7 BC108-BC bc109 gain BC-108-2 BC177
    Text: T> 3QE m 7^ETS3? QQ3DÔSS S • ~ ^ F Vr,- - _ f= 7 S M ' S G G I S - T ^ © H O M S O - Z ° i N l L i © T f[R M a û S B C - [ 1 B C 1 0 7 1 0 8 - B C 1 0 9 “ S-TH0MS0N LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS


    OCR Scan     		PDF BC107 BC108-BC109 BC107, BC108 BC109 BC177, BC178 BC179. BC107 BC103 BC108-BC109 BC 55 r7 BC108-BC bc109 gain BC-108-2 BC177

    Katalog CEMI

    Abstract: OA81 diode byp 660-50r Philips BC147 p 181 transoptor Mullard oa81 Hitachi 12V MS 5A-181 OA81 BA102 diode telefunken hr 780 rds
    Text: WSTIJP W ydaw nictw a Przem yslu M aszynowego WEMA przekazujq uzytkow nikom branzow y katalog pt. E l e m e n t y pólp rz e w o d n i k o w e , zaw ierajqcy dokladne inform acje techniczne dotycz^ce elem entów pólprzew odnikow ych produkow anych w Polsce n a skal^ przem yslow ^. W szystkie w yroby


    OCR Scan     		PDF

    TIS43

    Abstract: equivalent of transistor bc214 BF257 Texas equivalent of transistor bc212 bc 214 2N696 TEXAS INSTRUMENTS Q2T2222 TIS70 BFR40 kd 2060 transistor BF195 equivalent
    Text: The Transistor and Diode Data Book for Design Engineers Volume II Northern European Edition IMPORTANT NOTICES Texas Instrum ents Ltd ., reserves the rig h t to make changes at any tim e in order to improve design and to supply the best p ro d u c t possible.


    OCR Scan     		PDF 2S301 BS9300-C-598 2S305 BS9300-C-366 2S307 2S322 CV7396 BS9300-C-396 CV7647 BS9300-C-647 TIS43 equivalent of transistor bc214 BF257 Texas equivalent of transistor bc212 bc 214 2N696 TEXAS INSTRUMENTS Q2T2222 TIS70 BFR40 kd 2060 transistor BF195 equivalent

    smd npn 2n2222

    Abstract: bf471 BSR62 equivalent EQUIVALENT TRANSISTOR bc549c transistor bf 175 transistor bc547 PH in metal detector tunnel diode BSY95A BF470 BC200
    Text: SM ALL-SIGNAL TRANSISTORS page Selection guide A udio and general purpose a p p lica tio n s. 5 HF applications.


    OCR Scan     		PDF 2PC1815L 2PC1815 10xx0. 7Z88986 smd npn 2n2222 bf471 BSR62 equivalent EQUIVALENT TRANSISTOR bc549c transistor bf 175 transistor bc547 PH in metal detector tunnel diode BSY95A BF470 BC200

    bc2378

    Abstract: box33c b0345 b0348 b0735 B0346 b073b B0736 b0737 B0633
    Text: This Material Pro Electron Series Copyrighted 3> -i PRO ELECTRON SERIES Bipolar—see page 5-37 for JFET By Type No. Its BC107 Respective BC107A Case Styl« TO-18 TO-18 VCES* VC8 0 (VI Min 50 50 VCEO (V) Min V e BO (V) Min 45 6 45 6 'CES* 'CBO a V CB (Vi


    OCR Scan     		PDF tS0113D J15511 SD1130 bc2378 box33c b0345 b0348 b0735 B0346 b073b B0736 b0737 B0633