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    BC107A CHARACTERISTICS Search Results

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    bc108b

    Abstract: bc109c bc107 Transistor BC107 NPN BC108B transistor transistor bc107b for transistor bc107 bc109 Transistor BC109 BC107B
    Text: BC107,A,B BC108B,C BC109B,C NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BC107, BC108, BC109 series types are small signal NPN silicon transistors, manufactured by the epitaxial planar process, designed for general purpose amplifier


    Original     		PDF BC107 BC108B BC109B BC107, BC108, BC109 BC107) BC107A) BC107B, bc109c Transistor BC107 NPN BC108B transistor transistor bc107b for transistor bc107 Transistor BC109 BC107B

    TRANSISTOR bc108

    Abstract: BC107 Transistor application notes transistor BC107 specifications BC109c transistor Transistor BC107 BC109C BC107A Transistor BC109 BC108 applications of Transistor BC108
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D125 BC107; BC108; BC109 NPN general purpose transistors Product specification Supersedes data of 1997 May 01 File under Discrete Semiconductors, SC04 1997 Jun 03 Philips Semiconductors Product specification NPN general purpose transistors


    Original     		PDF M3D125 BC107; BC108; BC109 BC177, BC178 BC179. TRANSISTOR bc108 BC107 Transistor application notes transistor BC107 specifications BC109c transistor Transistor BC107 BC109C BC107A Transistor BC109 BC108 applications of Transistor BC108

    transistor BC107 specifications

    Abstract: BC107 Transistor application notes TRANSISTOR bc108 Transistor BC107 TRANSISTOR DATASHEET BC107B BC109c TRANSISTOR bc107 current gain BC107 equivalent transistors DATASHEET Transistor BC109 symbol transistor BC108
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D125 BC107; BC108; BC109 NPN general purpose transistors Product specification Supersedes data of 1997 Jun 03 File under Discrete Semiconductors, SC04 1997 Sep 03 Philips Semiconductors Product specification NPN general purpose transistors


    Original     		PDF M3D125 BC107; BC108; BC109 BC177. MAM264 SCA55 transistor BC107 specifications BC107 Transistor application notes TRANSISTOR bc108 Transistor BC107 TRANSISTOR DATASHEET BC107B BC109c TRANSISTOR bc107 current gain BC107 equivalent transistors DATASHEET Transistor BC109 symbol transistor BC108

    BC107

    Abstract: No abstract text available
    Text: BC107 BC107B Low noise general purpose audio amplifiers Description The BC107 and BC107B are silicon planar epitaxial NPN transistors in TO-18 metal case. They are suitable for use in driver stages, low noise input stages and signal processing circuits of television receivers. The PNP complementary


    Original     		PDF BC107 BC107B BC107 BC107B BC177 BC177B BC107A

    BC107

    Abstract: BC107B bc107 curves equivalent transistor bc107 Transistor BC107 DATASHEET Transistor BC107 transistor bc107b bc107 applications bc107 connections Characteristic curve BC107
    Text: BC107 BC107B Low noise general purpose audio amplifiers Description The BC107 and BC107B are silicon planar epitaxial NPN transistors in TO-18 metal case. They are suitable for use in driver stages, low noise input stages and signal processing circuits of television receivers. The PNP complementary


    Original     		PDF BC107 BC107B BC107 BC107B BC177 BC177B BC107A bc107 curves equivalent transistor bc107 Transistor BC107 DATASHEET Transistor BC107 transistor bc107b bc107 applications bc107 connections Characteristic curve BC107

    bc 5411

    Abstract: BC107 pin configuration BC108 pin configuration BC108 transistor BC108 BC107 BC107 DATASHEET bc108b equivalent BC107B Transistor BC107
    Text: BC107/BC108 Series Low Power Bipolar Transistors General Purpose Amplifier/Switches Feature: • NPN Silicon Planar Epitaxial Transistors. TO-18 Metal Can Package Dimensions Minimum Maximum A 5.24 5.84 B 4.52 4.97 C 4.31 5.33 D 0.40 0.53 E - 0.76 F - 1.27


    Original     		PDF BC107/BC108 BC107 BC108 bc 5411 BC107 pin configuration BC108 pin configuration BC108 transistor BC108 BC107 BC107 DATASHEET bc108b equivalent BC107B Transistor BC107

    BC107 pin configuration

    Abstract: BC109 pin configuration BC109 BC109C pin configuration BC108 BC107 pin BC108 pin configuration bc107a pin out DATASHEET Transistor BC109 BC107
    Text: BC107/ BC108/ BC109 Low Power Bipolar Transistors TO-18 Features: NPN Silicon Planar Epitaxial Transistors. Suitable for applications requiring low noise and good hFE linearity, eg. audio pre-amplifiers, and instrumentation. TO-18 Metal Can Package Dimension


    Original     		PDF BC107/ BC108/ BC109 BC107 BC108 BC109 BC107 pin configuration BC109 pin configuration BC109C pin configuration BC107 pin BC108 pin configuration bc107a pin out DATASHEET Transistor BC109

    BC107b

    Abstract: bc107 curves BC107 for BC107B bc107 applications
    Text: BC107 BC107B Low noise general purpose audio amplifiers Description The BC107 and BC107B are silicon planar epitaxial NPN transistors in TO-18 metal case. s ct They are suitable for use in driver stages, low noise input stages and signal processing circuits


    Original     		PDF BC107 BC107B BC107B BC177 BC177B BC107A bc107 curves for BC107B bc107 applications

    BCY58C

    Abstract: bc547b ferranti BCY59A bcy59b 2N3903 2N3904 BC107A BC107B BC182 BC237A
    Text: ELECTRICAL CHARACTERISTICS N.P.N. SM ALL SIG N AL TR A N SISTO RS hFE VcBO V ceo ICBO @ Min. Min. Max.atVcs lc Dice Type V V nA V Min. Max. mA BC546A BC546B BCY65EA BC182 2N3903 2N3904 BC107A BC107B BC237A BC237B BC547A BC547B BC550B BC550C BCY59A BCY59B BCY59C


    OCR Scan     		PDF BC546A BC546B BCY65EA BC182 2N3903 2N3904 BC107A BC107B BC237A BC237B BCY58C bc547b ferranti BCY59A bcy59b

    TRANSISTOR bc107 current gain

    Abstract: bc107a bc109 bc109c BC108B bc108a bc108c BC107B transistor TO-92 bc108 transistor bc107b
    Text: Philips Semiconductors Product specification NPN general purpose transistors BC107; BC108; BC109 FEATURES PINNING • Low current max. 100 mA PIN • Low voltage (max. 45 V). 1 APPLICATIONS DESCRIPTION emitter 2 base 3 collector, connected to the case • General purpose switching and amplification.


    OCR Scan     		PDF BC177. BC107; BC108; BC109 BC107 BC109 TRANSISTOR bc107 current gain bc107a bc109c BC108B bc108a bc108c BC107B transistor TO-92 bc108 transistor bc107b

    Transistor BC109

    Abstract: 8C109 BC109 applications of Transistor BC108 TRANSISTOR bc108 Transistor BC107 BC108 transistor BC107A BC107 bc109c
    Text: Datasheet 1 BC108,A,B,C BC1 0 9 , B, C BC 0 7 , A , B E O l l ll U ff H V w V lI l1 semiconductor Corp- NPN SI LI CON TRANSISTOR 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 1 JEDEC T O - 8 CASE Manufacturers of World Class Discrete Semiconductors


    OCR Scan     		PDF BC107 BC108 BC109 BC107, BC108, BC107A, BC108A) BC107B, BC108B, Transistor BC109 8C109 applications of Transistor BC108 TRANSISTOR bc108 Transistor BC107 BC108 transistor BC107A bc109c

    Untitled

    Abstract: No abstract text available
    Text: TO-18 Metal-Can Package Transistors NPN Electrical Characteristics (Ta=25'C, Unless Otherwise Specified) Maximum Ratings Type No. Pd (W) 0Tc=25°c ^C8Q (V) Min ^GEO ^EBO (V) Min (V) Min 2N915 70 50 5 0.36 2N916 45 25 5 0.36 2N929 45 45 5 0.5 ^CM *C80 ^C B


    OCR Scan     		PDF 2N915 2N916 2N929 2N930 BC109C BCY56 BCY57 BCY58 BCY58-10 BCY58-7

    BC107C

    Abstract: BC107 BC108A 2N915 bc109 BCY56 2N916 2N929 2N930 BC107A
    Text: an Package Transistors NPN Maximum Ratings Type No. Pd (W) Tc=25"c Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) ^CBO ^CEO ^EBO (V) Min (V) Min (V) Min 2N915 70 50 5' 0.36 2N916 45 25 5 0.36 0.2 2N929 45 45 5 0.5 0.03 (A) 'cM 'cBO (A)


    OCR Scan     		PDF 2N915 2N916 2N929 2N930 BC109C BCY56 BCY57 BCY58 BCYS8-10 BCY58-7 BC107C BC107 BC108A bc109 BC107A

    BC140 equivalent

    Abstract: 2N2484 equivalent transistors BC141 equivalent bcy59 equivalent bc160 equivalent 2n930 equivalent BC107 equivalent transistors 2n3019 equivalent BC177 equivalent BC107 pnp equivalent
    Text: Discrete Devices Transistors Cont. Low Level Amplifiers Maximum Ratings Type Polarity Pd Ambient mW Electrical Characteristics @ 25° C VCB VCE V e b Volts Volts Volts HpE *C Min/Max mA V c E (S a t) @ Ic/lß Volts mA/mA ft MHz Min NF@f Cob pF Max dB


    OCR Scan     		PDF 2N327A 2N327B 2N328A 2N328B 2N329A 2N329B 2N760 2N760A 502N329A BCY56 BC140 equivalent 2N2484 equivalent transistors BC141 equivalent bcy59 equivalent bc160 equivalent 2n930 equivalent BC107 equivalent transistors 2n3019 equivalent BC177 equivalent BC107 pnp equivalent

    BC140 equivalent

    Abstract: BCY34 2N328A BCY31 bcy59 equivalent BC109 MOTOROLA BCY25 DH3725CN bc108c equivalent 2N3133 MOTOROLA
    Text: Discrete Devices Transistors C ont. Medium Current, High-Speed Amplifiers Maximum Ratings Type Polarity PD Ambient mW Electrical Characteristics @ 25° C VCB VCE VEB Volts Volts Volts hfe VcE(Sat) @ Ic/lß @ ic Min/Max mA Volts mA/mA ft MHz Min Cob pF tON tOFF


    OCR Scan     		PDF 2N721A 2N722A 2N1132A 2N1132B 2N2217 2N2218 2N2218A 500/5NPN BSY51 BC140 equivalent BCY34 2N328A BCY31 bcy59 equivalent BC109 MOTOROLA BCY25 DH3725CN bc108c equivalent 2N3133 MOTOROLA

    ESG456

    Abstract: BC109C NPN C17S Transistor BC177 TO18 ir diode oerlikon BC107A BC107B ESG 456 BC109
    Text: / A] VANI OERLIKON/ SEÏIICONJ) 3bE DSblbMfi DDODGDT fi H S E L I D -oi-ol SILICON DIODES - “¿ 7 - 0 \ T f - o i/o<y h) Trigger devices Pd Ta=25«C TYPE - ESG 4 5 6 • ESG 4 5 7 ESG 4 5 8 Von I f (P e a k ) mA mW 200 200 200 SEMICONDUCTOR* If Vt (Trigger Voltage)


    OCR Scan     		PDF O-106 Vrb12V SX400S BC109 BC109B BC109C VBC177A BC177B ESG456 BC109C NPN C17S Transistor BC177 TO18 ir diode oerlikon BC107A BC107B ESG 456

    BC108A

    Abstract: bc109
    Text: BC107 to 109 _ A .F. SILICON PLANAR EPITAXIAL TRANSISTORS General purpose NPN transistors in TO-18 metal packages w ith the collector connected to the case. PNP com plem ents are BC177, BC178 and BC179. QUICK REFERENCE D ATA Collector-emitter voltage VgE = 0


    OCR Scan     		PDF BC107 BC177, BC178 BC179. BC107A BC107B BC108C BC108A BC108B bc109

    EQUIVALENT TRANSISTOR bc109c

    Abstract: equivalent transistor 2N1711 Transistor BC107 motorola bc109 Transistor Equivalent list EQUIVALENT TRANSISTOR bc108 Transistor BC107b motorola TRANSISTOR pnp BC140 TRANSISTOR BC140 BC140 equivalent transistor bc107b equivalent
    Text: Discrete Devices Transistors Cont. Low Level Amplifiers Maximum Ratings Type Polarity Pd Ambient mW Electrical Characteristics @ 25° C VCB VCE V e b Volts Volts Volts HpE *C Min/Max mA V c E (S a t) @ Ic/lß Volts mA/mA ft MHz Min NF@f Cob pF Max dB


    OCR Scan     		PDF 2N327A 2N327B 2N328A 2N328B 2N329A 2N329B 2N760 2N760A BT2946 2N2946 EQUIVALENT TRANSISTOR bc109c equivalent transistor 2N1711 Transistor BC107 motorola bc109 Transistor Equivalent list EQUIVALENT TRANSISTOR bc108 Transistor BC107b motorola TRANSISTOR pnp BC140 TRANSISTOR BC140 BC140 equivalent transistor bc107b equivalent

    ESG457

    Abstract: C17S BC107A BC107B BC108C BC109 BC109B BC109C C108A 7bc1
    Text: / A] VANI OERLIKON/ SEÏIICONJ) DSblbMfi DDODGDT fi H S E L I 3bE D - o SILICON DIODES T - ESG 4 5 6 • ESG 4 5 7 ESG 4 5 8 Pd Ta=25«C mW If Peak) mA 200 200 200 150 150 150 l - “¿ 7 - 0 \ (h) Trigger devices TYPE i - o Von Vt (Trigger Voltage) mm/max


    OCR Scan     		PDF O-106 Vrb12V SX400S O-105 O-220 020INOM. 0J07SI ESG457 C17S BC107A BC107B BC108C BC109 BC109B BC109C C108A 7bc1

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE blE D • bfc.SB'lBl DDS7Mtm 733 « A P X BC107 to 109 A.F. SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in TO-18 metal envelopes w ith the collector connected to the case. The BC107 is prim arily intended fo r use in driver stages o f audio amplifiers and in signal processing


    OCR Scan     		PDF BC107 BC108 BC109 BC107 bb53c DDS7S03

    PH BC107

    Abstract: PH BC109 bc107 curves 7z08s BC109C D73 -Y BC108C BC107 BG10Z BC108B
    Text: BGIQZJd 109 T PHILIPS INTERNATIONAL SbE D • - 2 ^ 711002b G O m ^ M Ô A.F. SILICON PLANAR EPITAXIAL TRANSISTORS / MIS ■ PHIN ^ N-P-N transistors in TO-18 metal envelopes with the collector connected to the case.


    OCR Scan     		PDF BG10ZÃ 711002b BC107 BC108 BC109 BC109 Collector-e07 PH BC107 PH BC109 bc107 curves 7z08s BC109C D73 -Y BC108C BG10Z BC108B

    AL102 ATES

    Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
    Text: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible


    OCR Scan     		PDF Trans-611 DT1521 2N2270 BC107-182KS ESC182KAS ESC182KBS ESC1Q8-183KS EiC183KBS 8C183KCS BC109-184KS AL102 ATES 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29

    BCY591

    Abstract: BC109C pin configuration 2N718 pin configuration 2N706 BC107C bcy59-7 BC107c pin 2n815 2N25 BC107 pin configuration
    Text: PIN CONFIGURATION 1. Emitter 2. B ase 3. Collector DIM MIN MAX A 5,24 5,84 B 4,52 4,97 C 4,31 5,33 D 0,40 0,53 E - F - 1,27 G - 2,97 0,76 H 0,91 1,17 J K 0,71 1,21 L 45D EG 12,7 - ALL DIMENSIONS ARE IN M.M. TO-18 Metal-Can Package Transistors NPN Maximum Ratings


    OCR Scan     		PDF BCY59-10 BFY76 BSX21 BSX48 BSY79 CIL351 CIL352 BCY591 BC109C pin configuration 2N718 pin configuration 2N706 BC107C bcy59-7 BC107c pin 2n815 2N25 BC107 pin configuration

    Untitled

    Abstract: No abstract text available
    Text: TO-18 - A • T o P IN C O N F IG U R A T IO N 1. E m itte r 2. B a s e 3 . C o lle c to r DIM MIN A 5,24 5,84 B 4,52 4,97 MAX C 4,31 5,33 D 0,40 0,53 0,76 E - F - 1,27 G - 2,97 H 0,91 1,17 J 0,71 1,21 K 12,7 L 45 DEG - ALL DIMENSIONS ARE IN M.M. TO-18 Metal-Can Package Transistors NPN


    OCR Scan     		PDF 2N2221 BSX48 CIL352 BSX21 BFY76 BCY59-9 BCY59-8 BCY59-7 BCY59-10 BCY59