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    BC 945 DATASHEET Search Results

    BC 945 DATASHEET Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    HS9-26C31RH-T Renesas Electronics Corporation Quad, 5.0V Differential Line Driver, CMOS Enable Class T Datasheet Visit Renesas Electronics Corporation
    HS1-26C31RH-T Renesas Electronics Corporation Quad, 5.0V Differential Line Driver, CMOS Enable Class T Datasheet Visit Renesas Electronics Corporation

    BC 945 DATASHEET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    C945K

    Abstract: c550b C548B TO-92 227 1020 C2785 bc 9013 MPS6521 pn3565 cs9015 C559B
    Text: NPN Low Level Amplifiers Device No. [Mark] K S C 900 Case Style I CBO IC V CE VCB h FE & @ Min Max mA (V) (nA) @ (V) Max V CE(SAT) (V) Max & V BE(SAT) V BE(ON) * IC @ (mA) IC C ob (pF) (V) (I = ) Min Max B 10 Max I (MHz) @ C Min (mA) NF (dB) Max Test Cond.


    Original     		PDF T5089 O-236 SS9011 C945K c550b C548B TO-92 227 1020 C2785 bc 9013 MPS6521 pn3565 cs9015 C559B

    Untitled

    Abstract: No abstract text available
    Text: Rev. 1.21. Apr. 2012 M474B5173BH0 M474B1G73BH0 204pin Unbuffered ECC SODIMM based on 4Gb B-die 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.


    Original     		PDF M474B5173BH0 M474B1G73BH0 204pin 78FBGA K4B4G0846B 512Mbx8 1Gx72

    EXAR BOOK

    Abstract: No abstract text available
    Text: PM4341A T1XC APPLICATION NOTE PMC-940934 ISSUE 3 THE T1XC IN LONG-HAUL APPLICATIONS PM4341A USING THE T1XC IN LONG-HAUL APPLICATIONS APPLICATION NOTE ISSUE 3: SEPTEMBER 1997 PMC-Sierra, Inc. 105 - 8555 Baxter Place Burnaby, BC Canada V5A 4V7 604 .415.6000


    Original     		PDF PM4341A PMC-940934 PM4341A PM-940934 EXAR BOOK

    Untitled

    Abstract: No abstract text available
    Text: COVER DATA SHEET 2GB Unbuffered DDR3L SDRAM DIMM EBJ20EF8EDWA 256M words  72 bits, 1 Rank Specifications Features • Density: 2GB • Organization — 256M words  72 bits, 1 rank • Mounting 9 pieces of 2G bits DDR3L SDRAM sealed in FBGA • Package: 240-pin socket type dual in-line memory


    Original     		PDF EBJ20EF8EDWA 240-pin 1600Mbps/1333Mbps M01E1007 E1862E20

    Untitled

    Abstract: No abstract text available
    Text: COVER PRELIMINARY DATA SHEET 4GB DDR3L SDRAM SO-DIMM EBJ40EG8EFUA 512M words  72 bits, 1 Rank Specifications Features • Density: 4GB • Organization — 512M words  72 bits, 1 rank • Mounting 9 pieces of 4G bits DDR3L SDRAM sealed in FBGA • Package: 204-pin socket type small outline dual in-line


    Original     		PDF EBJ40EG8EFUA 204-pin 1600Mbps 1333Mbps/1066Mbps /800Mbps/667Mbps M01E1007 E1979E10

    Untitled

    Abstract: No abstract text available
    Text: COVER PRELIMINARY DATA SHEET 4GB Unbuffered DDR3L SDRAM DIMM EBJ40EG8EFWA 512M words  72 bits, 1 Rank Specifications Features • Density: 4GB • Organization — 512M words  72 bits, 1 rank • Mounting 9 pieces of 4G bits DDR3L SDRAM sealed in FBGA


    Original     		PDF EBJ40EG8EFWA 240-pin 1600Mbps/1333Mbps M01E1007 E1952E10

    Untitled

    Abstract: No abstract text available
    Text: COVER DATA SHEET 4GB Unbuffered DDR3 SDRAM DIMM EBJ40EG8BFWB 512M words x 72 bits, 1 Rank Specifications Features • Density: 4GB • Organization — 512M words × 72 bits, 1 rank • Mounting 9 pieces of 4G bits DDR3 SDRAM sealed in FBGA • Package: 240-pin socket type dual in-line memory


    Original     		PDF EBJ40EG8BFWB 240-pin 1866Mbps/1600Mbps/1333Mbps M01E1007 E1977E30

    Untitled

    Abstract: No abstract text available
    Text: COVER PRELIMINARY DATA SHEET 4GB Unbuffered DDR3 SDRAM DIMM EBJ40EG8BFWA 512M words  72 bits, 1 Rank Specifications Features • Density: 4GB • Organization — 512M words  72 bits, 1 rank • Mounting 9 pieces of 4G bits DDR3 SDRAM sealed in FBGA


    Original     		PDF EBJ40EG8BFWA 240-pin 1866Mbps/1600Mbps/1333Mbps M01E1007 E1951E10

    Untitled

    Abstract: No abstract text available
    Text: COVER DATA SHEET 4GB Unbuffered DDR3 SDRAM DIMM EBJ40EG8BFWB 512M words  72 bits, 1 Rank Specifications Features • Density: 4GB • Organization — 512M words  72 bits, 1 rank • Mounting 9 pieces of 4G bits DDR3 SDRAM sealed in FBGA • Package: 240-pin socket type dual in-line memory


    Original     		PDF EBJ40EG8BFWB 240-pin 1866Mbps/1600Mbps/1333Mbps M01E1007 E1977E20

    Untitled

    Abstract: No abstract text available
    Text: Rev. 1.2, Aug. 2011 M378B2873GB0 M391B2873GB0 M378B5673GB0 M391B5673GB0 240pin Unbuffered DIMM based on 1Gb G-die 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.


    Original     		PDF M378B2873GB0 M391B2873GB0 M378B5673GB0 M391B5673GB0 240pin 78FBGA 128Mbx8 256Mx64/x72 M378/91B5673GB0 K4B1G0846G-BCâ

    Untitled

    Abstract: No abstract text available
    Text: Rev. 1.1, Apr. 2011 M378B2873GB0 M391B2873GB0 M378B5673GB0 M391B5673GB0 240pin Unbuffered DIMM based on 1Gb G-die 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.


    Original     		PDF M378B2873GB0 M391B2873GB0 M378B5673GB0 M391B5673GB0 240pin 78FBGA 128Mbx8 256Mx64/x72 M378/91B5673GB0 K4B1G0846G-BC

    Untitled

    Abstract: No abstract text available
    Text: Rev. 1.2, Aug. 2011 M378B2873GB0 M391B2873GB0 M378B5673GB0 M391B5673GB0 240pin Unbuffered DIMM based on 1Gb G-die 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.


    Original     		PDF M378B2873GB0 M391B2873GB0 M378B5673GB0 M391B5673GB0 240pin 78FBGA 128Mbx8 256Mx64/x72 M378/91B5673GB0 K4B1G0846G-BC

    CC1100

    Abstract: CC1150 DN012
    Text: Design Note DN012 Programming Output Power on CC1100 and CC1150 By Charlotte Seem Keywords • PATABLE Register Settings • Output Power Levels • Current Consumption 1 • CC1100 • CC1150 Introduction The CC1100 and CC1150 RF output power level is set by the PATABLE


    Original     		PDF DN012 CC1100 CC1150 CC1100 CC1150 SWRA150A DN012

    CD 5888 CB

    Abstract: emc2112 diode cc 3053 ba 5888 CD 5888 DA 2688 Transistor BC 1078 cc 3053 6A 1176 CD 7808
    Text: AN 17.4 RPM to TACH Counts Conversion 1 Preface This application note provides look up tables for the calculation of RPM to TACH Counts for use with the EMC2103, EMC2104, EMC2105, EMC2106, EMC2112, EMC2113, EMC2301, EMC2302, EMC2303, and EMC2305. 2 Audience


    Original     		PDF EMC2103, EMC2104, EMC2105, EMC2106, EMC2112, EMC2113, EMC2301, EMC2302, EMC2303, EMC2305. CD 5888 CB emc2112 diode cc 3053 ba 5888 CD 5888 DA 2688 Transistor BC 1078 cc 3053 6A 1176 CD 7808

    Untitled

    Abstract: No abstract text available
    Text: Rev. 1.1, Jul.2011 M391B1G73BH0 240pin Unbuffered DIMM based on 4Gb B-die 1.35V 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		PDF M391B1G73BH0 240pin 78FBGA 512Mbx8 1Gx72 K4B4G0846B-HY

    M391B1G73BH0

    Abstract: m391b1g
    Text: Rev. 1.2, Jan.2012 M391B1G73BH0 240pin Unbuffered DIMM based on 4Gb B-die 1.35V 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		PDF M391B1G73BH0 240pin 78FBGA 512Mbx8 1Gx72 K4B4G0846B-HY M391B1G73BH0 m391b1g

    Untitled

    Abstract: No abstract text available
    Text: Rev. 1.2, Aug. 2011 M391B2873GB0 M391B5673GB0 240pin Unbuffered DIMM based on 1Gb G-die 1.35V 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.


    Original     		PDF M391B2873GB0 M391B5673GB0 240pin 78FBGA K4B1G0846G-BYâ 128Mbx8 256Mxx72

    12VDC sf 249

    Abstract: 230 97o Osram LED SMD 5630 diodo 2B
    Text: 2013 Catalogo VLM 2013 VLM Catalogue 2013 since 1945 570 www.vlm.it since 1945 Indice Index Indicazioni Generali General warnings 575 Simboli e definizioni Symbols and definitions 577 Tipi, classi, gradi di protezione Types, classes, degrees of protection


    Original     		PDF VG/71P VG/73P VL-5081-65-B VL-5081-65-BV VL-5081-85-B VL-5081-85-BV 12VDC sf 249 230 97o Osram LED SMD 5630 diodo 2B

    M391B5673GB0

    Abstract: m391b5673gb m391b5673 CL-nRCD-nRP
    Text: Rev. 1.2, Aug. 2011 M391B2873GB0 M391B5673GB0 240pin Unbuffered DIMM based on 1Gb G-die 1.35V 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.


    Original     		PDF M391B2873GB0 M391B5673GB0 240pin 78FBGA K4B1G0846G-BY 128Mbx8 256Mxx72 M391B5673GB0 m391b5673gb m391b5673 CL-nRCD-nRP

    Untitled

    Abstract: No abstract text available
    Text: SG572288FH8D0UU January 23, 2008 Ordering Information Part Numbers Description Module Speed SG572288FH8D0KA 128Mx72 1GB , DDR3, 240-pin Unbuffered DIMM, ECC, 64Mx8 Based, DDR3-800-555, 30.00mm, Green Module (RoHS Compliant). PC3-6400 @ CL 5, 6 SG572288FH8D06B


    Original     		PDF SG572288FH8D0UU SG572288FH8D0KA 128Mx72 240-pin 64Mx8 DDR3-800-555, PC3-6400 SG572288FH8D06B

    Untitled

    Abstract: No abstract text available
    Text: Rev. 1.01, Dec. 2010 M378B2873GB0 M391B2873GB0 M378B5673GB0 240pin Unbuffered DIMM based on 1Gb G-die 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.


    Original     		PDF M378B2873GB0 M391B2873GB0 M378B5673GB0 240pin 78FBGA 128Mbx8 256Mx64 K4B1G0846G-BC

    intel g31 chipset motherboard

    Abstract: FCBGA 956 pin intel 945 90 nm CMOS DIODE AJ13 MOBILE PLATFORM 2008 POWER MANAGEMENT solution for auto shut down of P4 motherboard ST BB6 A110 945GU
    Text: Intel Processor A100 and A110 on 90 nm Process with 512-KB L2 Cache Datasheet January 2008 Document Number: 316908-002 IINFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL® PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS DOCUMENT. EXCEPT AS PROVIDED IN INTEL'S TERMS AND CONDITIONS


    Original     		PDF 512-KB intel g31 chipset motherboard FCBGA 956 pin intel 945 90 nm CMOS DIODE AJ13 MOBILE PLATFORM 2008 POWER MANAGEMENT solution for auto shut down of P4 motherboard ST BB6 A110 945GU

    Untitled

    Abstract: No abstract text available
    Text: SG572568FH8DWUU October 16, 2009 Ordering Information Part Numbers Description Module Speed SG572568FH8DWKA 256Mx72 2GB , DDR3, 204-pin Unbuffered SO-UDIMM, ECC, 128Mx8 Based, DDR3-800-555, 25.40mm, Green Module (RoHS Compliant). PC3-6400 @ CL 5, 6 SG572568FH8DW6B


    Original     		PDF SG572568FH8DWUU SG572568FH8DWKA 256Mx72 204-pin 128Mx8 DDR3-800-555, PC3-6400 SG572568FH8DW6B

    TRANSISTOR 131-6 BJ 946

    Abstract: transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16
    Text: Typeniibersicht Selection Guide Bestellnummern Ordering Codes Bestempelung Marking Catalog Technische Angaben « Technical Information Qualitatsangaben Quality Specification Gehause Package Outlines Verarbeitungshinweise Mounting Instructions Verpackungshinweise


    OCR Scan     		PDF B3-B3715 B3715-X-X-7600 TRANSISTOR 131-6 BJ 946 transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16