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    BC 817 25 NPN Search Results

    BC 817 25 NPN Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation

    BC 817 25 NPN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors BC 817-16LT1 BC817-25LT1 SOT-23 BC817-40LT1 TRANSISTOR NPN 1. BASE FEATURES 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter


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    PDF OT-23 817-16LT1 BC817-25LT1 OT-23 BC817-40LT1 100mA 500mA 500mA,

    Untitled

    Abstract: No abstract text available
    Text: SOT-23 Plastic-Encapsulate Transistors BC 817-16LT1 BC817-25LT1 SOT-23 BC817-40LT1 TRANSISTOR NPN 1. BASE FEATURES 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 50 V VCEO


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    PDF OT-23 817-16LT1 BC817-25LT1 OT-23 BC817-40LT1 100mA 500mA 500mA,

    ic 817

    Abstract: B 817 4 pin 817 B 817 c P 817 bc 817 6CS sot 23 ic 817 B 2BC817
    Text: BC 817, BC 818 NPN Silicon AF Transistors 3 • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage 2 • Complementary types: BC 807, BC 808 PNP 1 Type Marking Pin Configuration BC 817-16


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    PDF OT-23 VPS05161 Sep-27-1999 EHP00222 EHP00223 ic 817 B 817 4 pin 817 B 817 c P 817 bc 817 6CS sot 23 ic 817 B 2BC817

    C1740

    Abstract: ic 817 Q62702-C1740 C1505 Q 817 c1740 npn 6CS marking code sot 23 B 817 C1738 Q62702-C1505
    Text: NPN Silicon AF Transistors ● ● ● ● ● BC 817 BC 818 For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC 807, BC 808 PNP Type Marking Ordering Code Pin Configuration


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    PDF Q62702-C1732 Q62702-C1690 Q62702-C1738 Q62702-C1739 Q62702-C1740 Q62702-C1505 OT-23 C1740 ic 817 Q62702-C1740 C1505 Q 817 c1740 npn 6CS marking code sot 23 B 817 C1738 Q62702-C1505

    ic 817

    Abstract: Q62702-C1740 marking 6bs 6CS marking code sot 23 Q62702-C1505 Q62702-C1690 Q62702-C1732 Q62702-C1738 Q62702-C1739 bc 170
    Text: NPN Silicon AF Transistors ● ● ● ● ● BC 817 BC 818 For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC 807, BC 808 PNP 2 3 1 Type Marking Ordering Code Pin Configuration


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    PDF Q62702-C1732 Q62702-C1690 Q62702-C1738 Q62702-C1739 Q62702-C1740 Q62702-C1505 OT-23 ic 817 Q62702-C1740 marking 6bs 6CS marking code sot 23 Q62702-C1505 Q62702-C1690 Q62702-C1732 Q62702-C1738 Q62702-C1739 bc 170

    ic 817

    Abstract: C1740 Q62702-C1740 6CS marking code sot 23 C1505 B 817 5Bs sot-23 c1740 npn marking code 5cs BC 817 25 NPN
    Text: PNP Silicon AF Transistors ● ● ● ● ● BC 807 BC 808 For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC 817, BC 818 NPN Type Marking Ordering Code Pin Configuration


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    PDF Q62702-C1735 Q62702-C1689 Q62702-C1721 Q62702-C1736 Q62702-C1504 Q62702-C1692 OT-23 ic 817 C1740 Q62702-C1740 6CS marking code sot 23 C1505 B 817 5Bs sot-23 c1740 npn marking code 5cs BC 817 25 NPN

    BC817

    Abstract: BC818
    Text: BC 817 / BC 818 General Purpose Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage NPN NPN Power dissipation – Verlustleistung Plastic case Kunststoffgehäuse 1.1 2.9 ±0.1 0.4 1.3 ±0.1


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    PDF OT-23 O-236) UL94V-0 BC817 BC818

    Untitled

    Abstract: No abstract text available
    Text: BC 817 / BC 818 General Purpose Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage NPN NPN Power dissipation – Verlustleistung Plastic case Kunststoffgehäuse 1.1 2.9 ±0.1 0.4 1.3 ±0.1


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    PDF OT-23 O-236) UL94V-0

    C2320

    Abstract: Q62702-C2320 BC 170 transistor TRANSISTOR c2324 transistor 6cs ic 817 transistor 6bs 6CS transistor transistor bc icbo nA npn Q62702-C2278
    Text: BC 817-16W NPN Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary types: BC807W, BC808W PNP Type Marking Ordering Code Pin Configuration Package


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    PDF 17-16W BC807W, BC808W Q62702-C2320 OT-323 17-25W Q62702-C2278 17-40W C2320 Q62702-C2320 BC 170 transistor TRANSISTOR c2324 transistor 6cs ic 817 transistor 6bs 6CS transistor transistor bc icbo nA npn Q62702-C2278

    817-U

    Abstract: 6Bs transistor
    Text: BC 817U NPN Silicon Transistor Array • For AF input stages and driver applications 5 4 6 • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors 3 2 with good matching in one package 1 VPW09197


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    PDF VPW09197 EHA07178 SC-74 EHP00223 EHP00222 EHP00224 EHP00218 Apr-22-1999 817-U 6Bs transistor

    VSO05561

    Abstract: 818-25W
    Text: BC 817W, BC 818W NPN Silicon AF Transistors 3 • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage 2 • Complementary types: BC 807W, BC 808W PNP 1 Pin Configuration VSO05561 Type


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    PDF VSO05561 17-16W OT-323 17-25W 17-40W 18-16W 18-25W VSO05561 818-25W

    transistor 1Bs

    Abstract: ic 817 BC817UPN
    Text: BC 817U PN NPN/PNP Silicon Transistor Array • For AF input stages and driver applications 5 4 6 • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN/PNP 3 2 Transistors in one package 1 C1 B2 E2 6 5


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    PDF VPW09197 EHA07177 SC-74 EHP00223 EHP00222 EHP00224 EHP00218 Apr-22-1999 transistor 1Bs ic 817 BC817UPN

    BC817-40

    Abstract: 6as sot23 BC807 BC808 BC817 BC817-16 BC817-25 BC818 BC818-16 BC818-25
    Text: BC817, BC818 NPN Silicon AF Transistors 3  For general AF applications  High collector current  High current gain  Low collector-emitter saturation voltage 2  Complementary types: BC807, BC808 PNP 1 Type Marking Pin Configuration BC817-16 6As 1=B 2=E


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    PDF BC817, BC818 BC807, BC808 BC817-16 BC817-25 BC817-40 BC818-16 BC818-25 BC818-40 BC817-40 6as sot23 BC807 BC808 BC817 BC817-16 BC817-25 BC818 BC818-16 BC818-25

    ic 817

    Abstract: BC807 BC808 BC817 BC817-16 BC817-25 BC817-40 BC818 BC818-16 BC818-25
    Text: BC817, BC818 NPN Silicon AF Transistors 3  For general AF applications  High collector current  High current gain  Low collector-emitter saturation voltage 2  Complementary types: BC807, BC808 PNP 1 Type Marking Pin Configuration BC817-16 6As 1=B 2=E


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    PDF BC817, BC818 BC807, BC808 BC817-16 BC817-25 BC817-40 BC818-16 BC818-25 BC818-40 ic 817 BC807 BC808 BC817 BC817-16 BC817-25 BC817-40 BC818 BC818-16 BC818-25

    Untitled

    Abstract: No abstract text available
    Text: BC817, BC818 NPN Silicon AF Transistors 3 • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage 2 • Complementary types: BC807, BC808 PNP 1 Type Marking Pin Configuration BC817-16


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    PDF BC817, BC818 BC807, BC808 BC817-16 BC817-25 BC817-40 BC818-25 BC818-40 VPS05161

    BC817-40 INFINEON

    Abstract: Thermal CUTOFF 6AS SOT23
    Text: BC817, BC818 NPN Silicon AF Transistors 3  For general AF applications  High collector current  High current gain  Low collector-emitter saturation voltage 2  Complementary types: BC807, BC808 PNP 1 Type Marking Pin Configuration BC817-16 6As 1=B 2=E


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    PDF BC817, BC818 BC807, BC808 VPS05161 BC817-16 BC817-25 BC817-40 BC818-16 BC818-25 BC817-40 INFINEON Thermal CUTOFF 6AS SOT23

    Untitled

    Abstract: No abstract text available
    Text: BC 817 / BC 818 Surface mount NPN-Si-Epitaxial PlanarTransistors NPN-Si-Epitaxial PlanarTransistoren für die Oberflächenmontage Power dissipation – Verlustleistung B ±0.1 C 2.5 max 0.4 Plastic case Kunststoffgehäuse 1.1 ±0.1 1.3 2.9 310 mW E Dimensions / Maße in mm


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    PDF OT-23 O-236) UL94V-0

    bc 807

    Abstract: No abstract text available
    Text: BC 817 / BC 818 Surface mount NPN-Si-Epitaxial PlanarTransistors NPN-Si-Epitaxial PlanarTransistoren für die Oberflächenmontage Power dissipation – Verlustleistung 310 mW Plastic case Kunststoffgehäuse SOT-23 TO-236 Weight approx. – Gewicht ca. 0.01 g


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    PDF OT-23 O-236) UL94V-0 bc 807

    BC818C

    Abstract: marking 6E B 817 c
    Text: NPN Silicon AF Transistors BC 817 BC 818 For general AF a pplications High c o lle c to r cu rre n t High cu rre n t gain L o w c o lle c to r-e m itte r saturation voltage C om plem entary typ e s: BC 807, BC 808 PNP Type B B C 817-16 B B C 817-25 B B C 817-40


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    PDF

    BC 194 TRANSISTORS

    Abstract: marking code BC marking 5A
    Text: PNP Silicon AF Transistors • • • • • BC 807 BC 808 For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC 817, BC 818 NPN Type S BC 807-16 S BC 807-25 S BC 807-40 Marking


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    PDF 103mA BC 194 TRANSISTORS marking code BC marking 5A

    jc 817

    Abstract: BC 817 25 NPN marking 6CS 6CS marking code sot 23 IC jc 817 marking 6bs Q62702-C1738 B 817 c ic 817 Q62702-C1690
    Text: SIEM EN S NPN Silicon AF Transistors • • • • • BC 817 BC 818 For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC 807, BC 808 PNP Type Marking Ordering Code PinC tonfiguration


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    PDF Q62702-C1732 Q62702-C1690 Q62702-C1738 Q62702-C1739 Q62702-C1740 Q62702-C1505 OT-23 jc 817 BC 817 25 NPN marking 6CS 6CS marking code sot 23 IC jc 817 marking 6bs B 817 c ic 817

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS NPN Silicon AF Transistors • • • • • BC 817 BC 818 For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC 807, BC 808 PNP Type Marking Ordering Code PinC lonfigur ation


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    PDF Q62702-C1732 Q62702-C1690 Q62702-C1738 Q627Q2-C1739 Q62702-C1740 Q62702-C1505 OT-23 01EGS5Ã

    Untitled

    Abstract: No abstract text available
    Text: I NPN Silicon AF Transistors 32E D m ÔB3b320 SIEM ENS/ • • • • • ' D01bb20 SPCL-, ^ ' 1' BC817 T WMSIP BC818 SEM ICON DS For general AF applications High collector current High current gain Low collector-emltter saturation voltage Complementary types: BC 807, BC 808 PNP


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    PDF B3b320 D01bb20 BC817 BC818 823b32Q QQlbb23

    BC 170 transistor

    Abstract: No abstract text available
    Text: SIEMENS BC 817-16W NPN Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emltter saturation voltage • Complementary types: BC807W, BC808W PNP Type Marking Ordering Code Pin Configuration


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    PDF 17-16W BC807W, BC808W OT-323 Q62702-C2321 18-16W Q62702-Ã 18-25W Q62702-C2323 18-40W BC 170 transistor