BC 309 B TRANSISTOR Search Results

BC 309 B TRANSISTOR Result Highlights (6)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL
TK7R0E08QM	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB

BC 309 B TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
BC 114 transistor Abstract: bc 357 transistor pin details bc 357 transistor bc 357 transistor pin transistor bc 318 transistor BC 153 BC 170 transistor BC307A transistor BC 307 CDIL BC307 Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR EPITAXIAL TRANSISTORS BC 307, A, B, C BC 308, A, B, C BC 309, A, B, C TO-92 Plastic Package General Purpose Transistors Deisgned For Small Signal Amplification	Original	PDF	BC307 BC308 BC309 C-120 Rev160701 BC 114 transistor bc 357 transistor pin details bc 357 transistor bc 357 transistor pin transistor bc 318 transistor BC 153 BC 170 transistor BC307A transistor BC 307 CDIL BC307
Untitled Abstract: No abstract text available Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR EPITAXIAL TRANSISTORS BC 307, A, B, C BC 308, A, B, C BC 309, A, B, C TO-92 Plastic Package General Purpose Transistors Deisgned For Small Signal Amplification	Original	PDF	BC307 BC308 BC309 C-120 Rev160701
bc 357 transistor datasheet Abstract: bc 309 b transistor BC307 bc 357 transistor BC308 BC 114 transistor BC307A low noise transistor bc transistor BC 308 BC309 Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer SILICON PLANAR EPITAXIAL TRANSISTORS BC 307, A, B, C BC 308, A, B, C BC 309, A, B, C TO-92 Plastic Package General Purpose Transistors Deisgned For Small Signal Amplification	Original	PDF	BC307 BC308 BC309 C-120 Rev160701 bc 357 transistor datasheet bc 309 b transistor bc 357 transistor BC 114 transistor BC307A low noise transistor bc transistor BC 308 BC309
BC307D Abstract: BC307 BC309B 308C BC308C BC309 BC309 Motorola Text: MOTOROLA Order this document by BC307/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors BC307,B,C PNP Silicon BC308C BC309B COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 Symbol BC 307 BC 308C BC 309 Unit Collector – Emitter Voltage VCEO –45 –25	Original	PDF	BC307/D BC307 BC308C BC309B BC307/D* BC307D BC309B 308C BC308C BC309 BC309 Motorola
transistor BC 458 Abstract: Transistor BC 308C BC 2001 transistor BC307 BC307BTA BC237 bc309 BC308 Text: BC307/308/309 BC307/308/309 Switching and Amplifier Applications • Low Noise: BC309 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCES VCEO Parameter Collector-Emitter Voltage	Original	PDF	BC307/308/309 BC309 BC307 BC308/309 BC308 BC308ABU transistor BC 458 Transistor BC 308C BC 2001 transistor BC307 BC307BTA BC237 bc309
bc307bta Abstract: BC307 Text: BC307/308/309 BC307/308/309 Switching and Amplifier Applications • Low Noise: BC309 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCES VCEO Parameter Collector-Emitter Voltage	Original	PDF	BC307/308/309 BC309 BC307 BC308/309 BC307 bc307bta
BC308A Abstract: Transistor BC 308C BC307 Bc308 Text: BC307/308/309 BC307/308/309 Switching and Amplifier Applications • Low Noise: BC309 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCES VCEO Parameter Collector-Emitter Voltage	Original	PDF	BC307/308/309 BC309 BC307 BC308/309 BC308 BC308A Transistor BC 308C BC307
bc237 siemens Abstract: BC238 BC239 BC237 237B C307B C238C C237B marking CODE 50G TO92 C-239 Text: SIE » • SIEMENS flS35bQS G041540 134 « S I E G SIEMENS AKTIENGESELLSCHAF BC 237 . BC 239 NPN Silicon AF Transistors • High current gain • Low collector-emitter saturation voltage • Complementary types: B C 307, B C 308, BC 309 PNP Type BC BC	OCR Scan	PDF	flS35bQS G041540 Q62702-C697 Q62702-C276 Q62702-C277 Q62702-C698 Q62702-C278 Q62702-C279 Q62702-C280 Q62702-C699 bc237 siemens BC238 BC239 BC237 237B C307B C238C C237B marking CODE 50G TO92 C-239
308B Abstract: BC308 Motorola bc309 bc 307A bc307a BC309 Motorola bc307 Text: MOTOROLA SC XSTRS/R F 12E 0 I t3b7E5i 0043838 S \| BC307, A, B, C thru M A X IM U M RATINGS Sym bol R a tin g B C B C BC 307 308 309 BC309, A, B, C U nit Collector-Emltter Voltage VCEO 45 25 25 Vdc Collector-Base Voltage VCBO 50 30 30 Vdc Em itter-Base Voltage	OCR Scan	PDF	BC307, BC309, BC309 BC307 BC308 L3b7254 308B BC308 Motorola bc 307A bc307a BC309 Motorola
BC308 Abstract: bc307 siemens BC307 bc307a BC 309 BC307B Q62702-C285 BC 307 BC309C bc 374 Text: SIEMENS 51E D • flE35bD5 004155b 5T1 « S I E G SIEMENS AKTIENGESELLSCHAF " p 2 -*n -z i PNP Silicon AF Transistors BC 307 . BC 309 • High current gain • Low collector-emitter saturation voltage • Complementary types: BC 237, BC 238, BC 239 NPN	OCR Scan	PDF	flE35bD5 004155b Q62702-C703 Q62702-C283 Q62702-C324 Q62702-C704 Q62702-C285 Q62702-C286 Q62702-C393 Q62702-C705 BC308 bc307 siemens BC307 bc307a BC 309 BC307B BC 307 BC309C bc 374
fr 309 Abstract: BC307 BC177 BC179 BC 179 BC308 BC 307 bc 308 BC309 tfk 731 Text: BC 177 • BC 178 • BC179 BC 307 - BC 308 • BC 309 Silizium-PNP-Epitaxial-Planar-NF-Transistoren Silicon PNP Epitaxial Planar AF Transistors Anwendungen: NF-Vor- und Treiberstufen Applications: AF pre and d river stages Besondere Merkmale: Features: • BC 179, BC 309 fü r rauscharm e Vorstufen	OCR Scan	PDF	BC179 fr 309 BC307 BC177 BC179 BC 179 BC308 BC 307 bc 308 BC309 tfk 731
transistor BC 308 Abstract: transistor sc 308 transistor BC 307 bc 106 transistor transistor 307 bc 309 b transistor transistor BC 55 transistor da 307 SC 309 transistor CB 308 Text: * BC 307 BC 308 BC 309 MPN SILICON TRANSISTOR, EP ITAXIAL PLANAR r RANSISTOR NPN S ILIC IU M , PLAN A R E P IT A X IA L % Preferred device D isp o sitif recommandé 3C 309 and BC 308 transistors are intended or use in audio frequency preamplifier and iriver stages. BC 309 is intended for low	OCR Scan	PDF	BC307 CB-76 307ast 308ast transistor BC 308 transistor sc 308 transistor BC 307 bc 106 transistor transistor 307 bc 309 b transistor transistor BC 55 transistor da 307 SC 309 transistor CB 308
transistors BC 183 Abstract: TR BC 238 BC Transistors h21E BC 182 TR BC 237 B bc 237 BC174 BC213A BC307A Text: general purpose transistors — plastic case transistors usage général — boîtier plastique THOMSON-CSF NPN Characteristics at 25°C Maxim um ratings Type PNP Ptot min BC 174 BC 174 A BC 174 B mW (V) 300 64 / lc h21E VcEO h21 e * max (mA) 125* 110 200	OCR Scan	PDF	CB-76 transistors BC 183 TR BC 238 BC Transistors h21E BC 182 TR BC 237 B bc 237 BC174 BC213A BC307A
TRANSISTOR BC 213 Abstract: TRANSISTOR BC 181 bf 239 BF 212 transistor transistor bf 184 BF 184 NPN transistor TRANSISTOR BC 212 TRANSISTOR BC 174 transistor BC 338 BF 184 transistor Text: general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique tho m so n -c s f Case ^ ^ ^ 1 0 Polarity 92 CB-1% NPN PNP NPN PNP NPN 0,8.1 A 0,4.0,6 A « 0 ,2 A PNP v CEO 20 V B Ç 2 3 8 .	OCR Scan	PDF	BCW94 CB-76 TRANSISTOR BC 213 TRANSISTOR BC 181 bf 239 BF 212 transistor transistor bf 184 BF 184 NPN transistor TRANSISTOR BC 212 TRANSISTOR BC 174 transistor BC 338 BF 184 transistor

transistor bc 238 b Abstract: No abstract text available Text: PNP EPITAXIAL SILICON TRANSISTOR BC307/308/309 SWITCHING AND AMPLIFIER APPLICATIONS • LO W N OISE: BC309 T O -92 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector-E m ltter Voltage : BC307 : BC 308/309 C ollector-E m ltter Voltage : BC307	OCR Scan	PDF	BC307/308/309 BC309 BC307 transistor bc 238 b
fr 309 Abstract: BC307 309 T BC239 BC309 Text: PNP EPITAXIAL SILICON TRANSISTOR BC307/308/309 SWITCHING AND AMPLIFIER APPLICATIONS TO -92 • LO W NOISE: BC309 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Symbol C ollector-E m ltter Voltage : BC307 : BC 308/309 C ollector-E m ltter Voltage : BC307	OCR Scan	PDF	BC307/308/309 BC309 BC307 BC308/309 BC308/309 fr 309 BC307 309 T BC239 BC309
Transistoren DDR Abstract: vergleichsliste TELEFUNKEN bux 127 aktive elektronische bauelemente ddr BUX 127 SF 127 vergleichsliste DDR "vergleichsliste" bauelemente DDR sf 369 Text: VT FUNKAMATEUR-Bauelementeinformation Vergleichsliste für Transistoren DDR/international DDR-Typ Vergleichstyp Beschreibung Hinweise SC 237/238/239 SC 307/308/309 SCE 237 SD 335/337/339 BC 237/238/239 BC 307/308/309 BC 847 BCW 71/72 BCX 70 BC 848 BCW 31/32/33/60	OCR Scan	PDF	SCE237 SCE238 SCE239 SCE308 Transistoren DDR vergleichsliste TELEFUNKEN bux 127 aktive elektronische bauelemente ddr BUX 127 SF 127 vergleichsliste DDR "vergleichsliste" bauelemente DDR sf 369
TFK BC Abstract: TFK 110 TFK 309 TFK 727 tfk 4 309 tfk 238 BC109 tfk bc108 BC107 TFK 330 Text: BC 107 • B C 1 0 8 - B C 109 BC 237 • BC 238 • BC 239 'W Silizium-NPN-Epitaxial -Planar NF-Transistoren Silicon NPN Epitaxial Planar AF Transistors Anwendungen: NF-Vor- und Treiberstufen A p p lic a tio n s : AF pre and driver stages Features: Besondere Merkmale:	OCR Scan	PDF	BC108 BC109 TFK BC TFK 110 TFK 309 TFK 727 tfk 4 309 tfk 238 BC109 tfk bc108 BC107 TFK 330
bc 658 Abstract: bo 135 bc 433 bc 540 bo 139 BF139 BA 659 BC658 BCW93B BC659 Text: s ß / F 1139 8 CB 76 T 0 18 (CB 6) s T O 39 (CB 7) T O 92 (CB 97) Silicon PN P transistors, general purpose (continued) Transistors P N P silicium, usage générai (suite) VcEO (V) Case Ptot (mW) VCER* Tamb — 25 °C h21 E h2 1 E * min *C (m A) V C Esat	OCR Scan	PDF
BC253 Abstract: BC251 BC252 BC 251 BC256 transistor bc 102 BC309 BC307 BC308 Text: BC251 . . BC307 PNP Silicon Epitaxial Planar Transistors for switching and am plifier applications The transistors are subdivided into three groups A, B and C according to their current gain. BC256 is available in groups A and B only. BC253 and BC309 are low noise types.	OCR Scan	PDF	BC251 BC307 BC256 BC253 BC309 BC251, BC307 BC252, BC253, BC251 BC252 BC 251 transistor bc 102 BC308
SSY20 Abstract: SF828 VEB mikroelektronik funkamateur BUX 127 SF126 SF 127 SF128 SF826 SF 829 B Text: FUNKAMATEUR-Bauelementeinformation DDR-SiliziumTransistoren Typenübersicht Si-Transistoren des VEB Kombinat Mikroelektronik Grenzdaten Zonen Vorzugs anwendungen2 folge P,o, [mW, W ] Typ1 Kenndaten UcBO U ceO T • T * 1C , ACsat [V] [V] [mA, (A)] fiT3	OCR Scan	PDF
bc 540 Abstract: TRANSISTOR BC 137 TRANSISTOR BC 187 transistor Bc 540 TRANSISTOR BC 136 bc 207 npn BC 677 bsv57b TRANSISTOR BD 187 BD 139 N Text: Power transistors for horizontal deflection output circuits Type Structure Fig. Nr. Characteristics Maximum ratings ptot at 'case = +90°c 7c :a v W A fj Notes at ^ CERM V M Hz rc mA ^ CEsat a / q and " F E V A BU 204 NPN 25 10.0 2.5 1300 7.5 100 S5 2.0 2.0	OCR Scan	PDF	BC1611) BCY58 BCY59 BD1361) BD436' BC432' BC547 bc 540 TRANSISTOR BC 137 TRANSISTOR BC 187 transistor Bc 540 TRANSISTOR BC 136 bc 207 npn BC 677 bsv57b TRANSISTOR BD 187 BD 139 N
BC238 Abstract: bc177-vi bc140 1012C 026 pnp Text: AF transistors Type Group A B BC 108 A B C B C BC 140 uCBO f j I q and 45 45 300 300 10 10 2 2 5 5 < 10 <10 20 20 20 300 300 300 10 10 10 110-220 200-450 110-220 200-450 420-800 2 2 2 5 5 5 20 20 300 300 10 10 200-450 420-800 2 2 5 5 £10 £10 £ 10 £4 £4	OCR Scan	PDF
BC413 Abstract: AMI siemens BC414C N 413 af BC414 BC413C bc 580 BTB 700 siemens marking 411 414c Text: SIE D SIEM EN S • A53Sba5 D041S64 4bb « S I E C SIEMENS AKTIENGESELLSCHAF NPN Silicon AF Transistors BC 413 BC 414 • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BC 415, BC 416 PNP	OCR Scan	PDF	A53Sba5 D041S64 VPTO52I2 Q62702-C375 Q62702-C375-V1 Q62702-C375-V2 Q62702-C376 Q62702-C376-V1 Q62702-C376-V2 35Li05 BC413 AMI siemens BC414C N 413 af BC414 BC413C bc 580 BTB 700 siemens marking 411 414c

BC 309 B TRANSISTOR Search Results

BC 309 B TRANSISTOR Result Highlights (6)

BC 309 B TRANSISTOR Datasheets Context Search

BC 114 transistor

Untitled

bc 357 transistor datasheet

BC307D

transistor BC 458

bc307bta

BC308A

bc237 siemens

308B

BC308

fr 309

transistor BC 308

transistors BC 183

TRANSISTOR BC 213

transistor bc 238 b

fr 309

Transistoren DDR

TFK BC

bc 658

BC253

SSY20

bc 540

BC238

BC413