transistors BC 557C
Abstract: transistors BC 558c 556B transistor BC 557B ic 556 datasheet 559C transistors bc 557b ic 556 558B equivalent bc 558b
Text: BC 556 . BC 559 PNP General Purpose Transistors Si-Epitaxial PlanarTransistors PNP Power dissipation – Verlustleistung 500 mW Plastic case Kunststoffgehäuse TO-92 10D3 Weight approx. – Gewicht ca. 0.18 g Plastic material has UL classification 94V-0
|
Original
|
UL94V-0
transistors BC 557C
transistors BC 558c
556B
transistor BC 557B
ic 556 datasheet
559C
transistors bc 557b
ic 556
558B
equivalent bc 558b
|
PDF
|
ic 546
Abstract: 549B 546b transistors BC 548C ic 548 transistors 547C transistors BC 546 B bc 548b bc 104 npn transistor bc 547b
Text: BC 546 . BC 549 NPN General Purpose Transistors Si-Epitaxial PlanarTransistors NPN Power dissipation – Verlustleistung 500 mW Plastic case Kunststoffgehäuse TO-92 10D3 Weight approx. – Gewicht ca. 0.18 g Plastic material has UL classification 94V-0
|
Original
|
UL94V-0
ic 546
549B
546b
transistors BC 548C
ic 548
transistors 547C
transistors BC 546 B
bc 548b
bc 104 npn transistor
bc 547b
|
PDF
|
BC860W
Abstract: No abstract text available
Text: BC 856W . BC 860W General Purpose Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage PNP 2±0.1 1±0.1 Type Code 1 1.25±0.1 3 2.1±0.1 0.3 Power dissipation – Verlustleistung 200 mW Plastic case
|
Original
|
OT-323
UL94V-0
856AW
857AW
857BW
857CW
858AW
858BW
858CW
859BW
BC860W
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BC 856W . BC 860W General Purpose Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage PNP 2±0.1 Type Code 1 1.25±0.1 3 2.1±0.1 0.3 1±0.1 Power dissipation – Verlustleistung 200 mW Plastic case
|
Original
|
OT-323
UL94V-0
856AW
857AW
858AW
856BW
857BW
858BW
859BW
860BW
|
PDF
|
transistors BC 23
Abstract: 849B 847C 848B
Text: BC 846 . BC 850 General Purpose Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage NPN NPN Power dissipation – Verlustleistung Plastic case Kunststoffgehäuse 1.1 2.9 ±0.1 0.4 1.3 ±0.1
|
Original
|
OT-23
O-236)
UL94V-0
transistors BC 23
849B
847C
848B
|
PDF
|
BC 620
Abstract: 847BW 846BW 850CW
Text: BC 846W . BC 850W General Purpose Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage NPN 2±0.1 1±0.1 Type Code 1 1.25±0.1 3 2.1±0.1 0.3 NPN Power dissipation – Verlustleistung 200 mW
|
Original
|
OT-323
UL94V-0
846AW
847AW
847BW
847CW
848AW
848BW
848CW
849BW
BC 620
847BW
846BW
850CW
|
PDF
|
856B
Abstract: 858C
Text: BC 856 . BC 860 General Purpose Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage PNP Power dissipation – Verlustleistung 1.3 ±0.1 2.5 max 3 Type Code SOT-23 TO-236 Weight approx. – Gewicht ca.
|
Original
|
OT-23
O-236)
UL94V-0
856B
858C
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BC 846 . BC 850 General Purpose Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage NPN NPN Power dissipation – Verlustleistung Plastic case Kunststoffgehäuse 1.1 2.9 ±0.1 0.4 1.3 ±0.1
|
Original
|
OT-23
O-236)
UL94V-0
|
PDF
|
H12E
Abstract: No abstract text available
Text: BC 857BL3, BC 858BL3 PNP Silicon AF Transistors Preliminary data For AF input stages and driver applications 3 High current gain Low collector-emitter saturation voltage 1 Complementary types: BC 847BL3, 2 BC 848BL3 NPN Type Marking Pin Configuration
|
Original
|
857BL3,
858BL3
847BL3,
848BL3
857BL3
H12E
|
PDF
|
transistor Bc 580
Abstract: TRANSISTOR BC 450 pnp transistor BC 660
Text: BC 847BL3, BC 848BL3 NPN Silicon AF Transistor Preliminary data For AF input stage and driver applications 3 High current gain Low collector-emitter saturation voltage 1 complementary types: BC 857BL3, 2 BC 858BL3 PNP Type Marking Pin Configuration
|
Original
|
847BL3,
848BL3
857BL3,
858BL3
847BL3
transistor Bc 580
TRANSISTOR BC 450 pnp
transistor BC 660
|
PDF
|
857T
Abstract: 857BT
Text: BC 857T PNP Silicon AF Transistor 3 For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Complementary types: BC 847 .T 2 1 Type Marking Pin Configuration BC 857AT 3Es 1=B 2=E 3=C SC-75 BC 857BT 3Fs
|
Original
|
VPS05996
857AT
857BT
SC-75
SC-75
EHP00381
EHP00380
Apr-20-2000
EHP00382
EHP00379
857T
857BT
|
PDF
|
857T
Abstract: BC857AT BC857BT SC-75
Text: BC 857T PNP Silicon AF Transistor 3 For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Complementary types: BC 847 .T 2 1 Type Marking Pin Configuration BC 857AT 3Es 1=B 2=E 3=C SC-75 BC 857BT 3Fs
|
Original
|
857AT
SC-75
857BT
VPS05996
EHP00381
EHP00380
Nov-03-1999
EHP00382
EHP00379
857T
BC857AT
BC857BT
SC-75
|
PDF
|
ZO 109
Abstract: BC 107 BC109 bc107 bc 109 BC108 bc 108 zo 107 X10-4 bc 230
Text: BC 107 BC 108 BC 109 SILICON PLANAR NPN LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS The BC107, BC 108 and ESC 109 are silico n planar epitaxial NPN transistors in TO-18 metal case. They are suitable fo r use in driver stages, low noise input stages and signal processing circ u its of television receivers.
|
OCR Scan
|
BC109
BC177,
BC178
BC179.
ZO 109
BC 107
bc107
bc 109
BC108
bc 108
zo 107
X10-4
bc 230
|
PDF
|
BC478
Abstract: BC479 BC 195 TRANSISTORS BC477
Text: BC 477 BC 478 BC 479 SILICON P L A N A R P N P LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS The BC477, BC 478 and BC479 are silicon planar epitaxial P N P transistors in TO-18 metal case. The B C 477 is a high voltage type designed for use in audio amplifiers or driver
|
OCR Scan
|
BC479
BC478
BC 195 TRANSISTORS
BC477
|
PDF
|
|
sot-23 MARKING CODE 1Gs
Abstract: bc 846 BC850 BC846
Text: SIEMENS NPN Silicon AF Transistors BC 846 . BC 850 Features • • • • • For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 856, BC 857,
|
OCR Scan
|
Q62702-C1772
Q62702-C1746
Q62702-C1884
Q62702-C1687
Q62702-C1715
Q62702-C1741
Q62702-C1704
Q62702-C1506
Q62702-C1727
Q62702-C1713
sot-23 MARKING CODE 1Gs
bc 846
BC850
BC846
|
PDF
|
TRANSISTOR BC 416 b pnp
Abstract: TRANSISTOR BC 415 TRANSISTOR BC 416 b TRANSISTOR BC 415 b pnp BC 104 transistor bc416 TFK 802 tfk 416 TFK 110 TRANSISTOR BC 560
Text: BC 415 • BC 416 Silizium-PNP-Epitaxial-Planar NF-Transistoren Silicon PN P Epitaxial Planar A F Transistors Anwendungen: Rauscharme Vorstufen Applications: Low noise pre stages Features: Besondere Merkmale: • Rauschmaß < 2 dB • Noise figure < 2 dB • In Gruppen sortiert
|
OCR Scan
|
|
PDF
|
BC 418
Abstract: bc415b ssv 620 BC416A bc415a bc415 bc415c 416b IC 415 ms 415
Text: *BC 415 BC 416 PNP SILICON TRANSISTORS, EPITA X IA L PLANAR TRANSISTORS PNP S ILIC IU M , PLA N A R E P IT A X IA U X % Preferred device D is p o s itif recommandé The BC 415 and BC 416 are very low noise transistors intended for input stages in audio ^ frequency amplifiers.
|
OCR Scan
|
CB-76
BC 418
bc415b
ssv 620
BC416A
bc415a
bc415
bc415c
416b
IC 415
ms 415
|
PDF
|
kc 3229
Abstract: BC 477 G3229 BC 195 TRANSISTORS BC477 G-323 G-3229 BC479 g323
Text: BC 477 BC 478 BC 479 SILICON PLANAR PNP LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS The BC 477, BC 478 and BC 479 are silicon planar epitaxial PNP transistors in TO-18 metal case. The BC 477 is a high voltage type designed fo r use in audio am plifiers or driver
|
OCR Scan
|
BC477,
G-3229
G-322S
G-323;
kc 3229
BC 477
G3229
BC 195 TRANSISTORS
BC477
G-323
G-3229
BC479
g323
|
PDF
|
transistor bc 144
Abstract: TRANSISTOR
Text: SIEMENS NPN Silicon AF Transistor • • • • BC 368 High current gain High collector current Low collector-emitter saturation voltage Complementary type: BC 369 PNP Type Marking Ordering Code BC 368 - C62702-C747 PinCoinfigurat ion 1 2 3 E C Package1)
|
OCR Scan
|
C62702-C747
flS35fc
D12D515
023SbGS
Q15051L
transistor bc 144
TRANSISTOR
|
PDF
|
transistor BC 549
Abstract: transistor BC 550 TRANSISTOR BC 550 c TRANSISTOR BC 550 b TFK BC BC549 BC550 TRANSISTOR BC 135 BE550 TRANSISTOR BC 620
Text: BC 549 - BC 550 Silizium-NPN-Epitaxial-Planar-NF-Transistoren Silicon NPN Epitaxial Planar AF Transistors Anwendung: Rauscharme V orstufen Application: Low noise prestages Besondere Merkmale: Features: • Verlustleistung 500 mW • Power dissipation 500 m W
|
OCR Scan
|
|
PDF
|
bc 339
Abstract: bc560 bc558c cbc560 bc557 bc560c ic 556 BC556A AMI siemens BC557B
Text: SIE D SIEM ENS • fl235b05 O O m b l b ÔTb « S I E G SIEMENS AKTIENGESELLSCHAF T v fl- Z l PNP Silicon AF Transistors • • • • BC 556 . BC560 High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 546, BC 547,
|
OCR Scan
|
fl235b05
BC560
Q62702-C692
Q62702-C692-V1
Q62702-C692-V2
Q62702-C693
Q62702-C693-V1
Q62702-C693-V2
Q62702-C694
Q62702-C694-V1
bc 339
bc560
bc558c
cbc560
bc557
bc560c
ic 556
BC556A
AMI siemens
BC557B
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SIEMENS PNP Silicon AF Transistors BC 856W . BC 860W Features • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BC 847W, BC 848W,
|
OCR Scan
|
Q62702-C2335
Q62702-C2292
Q62702-C2293
Q62702-C2294
Q62702-C2295
Q62702-C2296
Q62702-C2297
Q62702-C2298
Q62702-C2299
Q62702-C2300
|
PDF
|
BC 511
Abstract: Q62702-C2295 MARKING 3FS
Text: SIEMENS PNP Silicon A F Transistors BC 856W . BC 860W Features • • • • • For A F input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 847W, B C 848W,
|
OCR Scan
|
Q62702-C2335
Q62702-C2292
Q62702-C2293
Q62702-C2294
Q62702-C2295
Q62702-C2296
Q62702-C2297
Q62702-C2298
Q62702-C2299
Q62702-C2300
BC 511
MARKING 3FS
|
PDF
|
transistor af 178
Abstract: bc 162 transistor TRANSISTOR BC 157 BC179 BC179 transistor bc 106 transistor TO-18 BC-177 pnp transistor Q62702-C141 BG177 bc 103 transistor
Text: 2SC ì> • 023SbOS O D Q m i S 7 H S I E 6 — ¿p c xj*tLL^ D '*y * <Ky PNP Silicon Transistors * jO " BC 177 -SIEMENS AKTIENGESELLSCHAF - BC179 BC 177, BC 178, and BC 179 are epitaxial PNP silicon planar transistors in TO 18 case 18 A 3 DIN 41876 . The collector is electrically connected to the case. The transistors are
|
OCR Scan
|
23SbOS
-BC179
Q62702-C684
Q62702-C141
Q62702-C142
Q62702-C685
Q62702-C153
Q62702-C154
Q62702-C155
BC1791Â
transistor af 178
bc 162 transistor
TRANSISTOR BC 157
BC179
BC179 transistor
bc 106 transistor
TO-18 BC-177 pnp transistor
Q62702-C141
BG177
bc 103 transistor
|
PDF
|