BC 103 TRANSISTOR Search Results

BC 103 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

BC 103 TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
DA QG Abstract: No abstract text available Text: IPB065N06L G IPP065N06L G "%&$!"# Power-Transistor Product Summary Features P ? A61BCBF9 C 3 89>7 3 ? >E5AC 5AB 1>4 BH>3 A53 C 969 3 1C 9? > P 3 81>>5<5>81>3 5=5>C <? 79 3 <5E5< V 9H .( J R , ? >=1G .&- Y" I9 0( 6 P S ? @5A1C 9>7 C 5=@5A1C	Original	IPB065N06L IPP065N06L DA QG	PDF
IPB085N06L Abstract: da5 diode marking 4rt IPB085N06L G Text: IPB085N06L G IPP085N06L G "%&$!"# Power-Transistor Product Summary Features V 9H P ? A61BCBF9 C 3 89>7 3 ? >E5AC 5AB 1>4 BH>3 A53 C 969 3 1C 9? > R , ? >=1G , ' P 3 81>>5<5>81>3 5=5>C <? 79 3 <5E5< E5AB9 ?> I9 .( J 0&* Y" 0( 6 P S ? @5A1C	Original	IPB085N06L IPP085N06L da5 diode marking 4rt IPB085N06L G	PDF
DA5 diode Abstract: No abstract text available Text: IPB110N06L G IPP110N06L G "%&$!"# Power-Transistor Product Summary Features V 9H P ? A61BCBF9 C 3 89>7 3 ? >E5AC 5AB 1>4 BH>3 A53 C 969 3 1C 9? > R , ? >=1G , ' P 3 81>>5<5>81>3 5=5>C <? 79 3 <5E5< E5AB9 ?> I9 .( J Y" /0 6 P S ? @5A1C	Original	IPB110N06L IPP110N06L DA5 diode	PDF
5411C Abstract: da5 diode BC519 58a4 Text: IPB080N06N G IPP080N06N G "%&$!"# Power-Transistor Product Summary Features V 9H P & ? F 71C 5 3 81A75 6? A61BCBF9C 3 89 >7 1@@<9 3 1C 9? >B R , ? >=1G , ' P 3 81>>5<5>81>3 5=5>C >? A=1<<5E5< E5AB9 ?> I9 .( J /&/ Y" 0( 6 P S ? @5A1C 9>7 C	Original	IPB080N06N IPP080N06N 5411C da5 diode BC519 58a4	PDF
BC519 Abstract: 81a diode Text: IPB070N06N G IPP070N06N G IPI070N06N G "%&$!"# Power-Transistor Product Summary Features V 9H P & ? F 71C 5 3 81A75 6? A61BCBF9C 3 89 >7 1@@<9 3 1C 9? >B R , ? >=1G , ' P 3 81>>5<5>81>3 5=5>C >? A=1<<5E5< E5AB9 ?> I9 .( J .&/ Y" 0( 6 P S ? @5A1C	Original	IPB070N06N IPP070N06N IPI070N06N BC519 81a diode	PDF
Diode Marking C.3 Abstract: da5 diode DA5 marking 5411C Text: IPB070N06L G IPP070N06L G "%&$!"# Power-Transistor Product Summary Features V 9H P ? A61BCBF9 C 3 89>7 3 ? >E5AC 5AB 1>4 BH>3 A53 C 969 3 1C 9? > R , ? >=1G , ' P 3 81>>5<5>81>3 5=5>C <? 79 3 <5E5< E5AB9 ?> I9 .( J .&/ Y" 0( 6 P S ? @5A1C	Original	IPB070N06L IPP070N06L Diode Marking C.3 da5 diode DA5 marking 5411C	PDF
da5 diode Abstract: BC519 IPB048N06L IPP048N06L DA QG marking 1bc Text: IPP048N06L G IPB048N06L G "%&$!"# Power-Transistor Product Summary Features V 9H P ? A61BCBF9 C 3 89>7 3 ? >E5AC 5AB 1>4 BH>3 A53 C 969 3 1C 9? > R , ? >=1G , ' P 3 81>>5<5>81>3 5=5>C <? 79 3 <5E5< E5AB9 ?> I9 .( J ,&, Y" ( 6 P S ? @5A1C	Original	IPP048N06L IPB048N06L da5 diode BC519 DA QG marking 1bc	PDF
Transistor 2SA 2SB 2SC 2SD Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59 Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle	OCR Scan		PDF
WM 53B Abstract: No abstract text available Text: SIEM ENS PNP Silicon AF Transistors • • • • BC 636 . BC 640 High current gain High collector current Low collector-emitter saturation voltage Complementary types: BC 635, BC 637, BC 639 NPN Type Marking BC 636 BC 638 BC 640 Ordering Code Q68000-A3365	OCR Scan	Q68000-A3365 Q68000-A3366 Q68000-A3367 EHP00204 EHP00202 EHP00205 flS35bDS 01EDSM2 fl235b05 D1205M3 WM 53B	PDF
ksd 302 250v, 10a Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643 Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle	OCR Scan	CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643	PDF
Untitled Abstract: No abstract text available Text: SIEMENS NPN Silicon AF Transistors • • • • • BC 817 BC 818 For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC 807, BC 808 PNP Type Marking Ordering Code PinC lonfigur ation	OCR Scan	Q62702-C1732 Q62702-C1690 Q62702-C1738 Q627Q2-C1739 Q62702-C1740 Q62702-C1505 OT-23 01EGS5Ã	PDF
C 548 B Abstract: B549C BC650 C 547 B TRANSISTOR BC650 transistor bc 549 equivalent transistor C 548 B C547B TRANSISTOR BC 550 c transistor c 548 Text: asc D • fi 23S hü S Q Q Q m S Q T M S I E G _ T - 2~ 9 ~ Z / NPN Silicon Transistors BC 546 - BC 550 SIEMENS AKTIENGESELLSCHAF . 25C 04190 D - BC 546, BC 547, BC 548, BC 549 and BC 550 are epitaxial NPN silicon planar transistors in TO 92 plastic packages 10 A 3 DIN 41868 . They are intended for use in AF input and	OCR Scan	Q62702-C687 Q62702-C687-V3 Q62702-C687-V1 Q62702-C687-V2 Q62702-C688 Q62702-C688-V3 Q62702-C688-V1 Q62702-C688-V2 Q6270 200Hz C 548 B B549C BC650 C 547 B TRANSISTOR BC650 transistor bc 549 equivalent transistor C 548 B C547B TRANSISTOR BC 550 c transistor c 548	PDF
transistor bc 577 Abstract: transistor bc 103 Text: SIEMENS BC 847S NPN Silicon AF Transistor Array >For AF input stages and driver applications >High current gain >Low collector-emitter saturation voltage >Two galvanic internal isolated Transistors in one package F] FI FI liJ lU Type Marking Ordering Code	OCR Scan	Q62702-2372 OT-363 flE35bDS BC847S EHP00365 fl235b05 transistor bc 577 transistor bc 103	PDF
BC 194 TRANSISTORS Abstract: marking code BC marking 5A Text: PNP Silicon AF Transistors • • • • • BC 807 BC 808 For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC 817, BC 818 NPN Type S BC 807-16 S BC 807-25 S BC 807-40 Marking	OCR Scan	103mA BC 194 TRANSISTORS marking code BC marking 5A	PDF

BC441 Abstract: bc460 transistor bc 102 bc 103 Text: BC 460 BC 461 SI L I CON P L A N A R PNP MEDIUM POWER AMPLIFIER The BC 460 and metal case. They BC 461 are are silicon intended for planar epitaxial PNP general purpose applications, transistors iri TO-39 especially for driver stages. The com plem entary NPN types are respectively the BC 440 and BC441.	OCR Scan	BC441. BC441 bc460 transistor bc 102 bc 103	PDF
Untitled Abstract: No abstract text available Text: I NPN Silicon AF Transistors 32E D m ÔB3b320 SIEM ENS/ • • • • • ' D01bb20 SPCL-, ^ ' 1' BC817 T WMSIP BC818 SEM ICON DS For general AF applications High collector current High current gain Low collector-emltter saturation voltage Complementary types: BC 807, BC 808 PNP	OCR Scan	B3b320 D01bb20 BC817 BC818 823b32Q QQlbb23	PDF
BC478 Abstract: BC479 BC 195 TRANSISTORS BC477 Text: BC 477 BC 478 BC 479 SILICON P L A N A R P N P LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS The BC477, BC 478 and BC479 are silicon planar epitaxial P N P transistors in TO-18 metal case. The B C 477 is a high voltage type designed for use in audio amplifiers or driver	OCR Scan	BC479 BC478 BC 195 TRANSISTORS BC477	PDF
sot-23 MARKING CODE 1Gs Abstract: bc 846 BC850 BC846 Text: SIEMENS NPN Silicon AF Transistors BC 846 . BC 850 Features • • • • • For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 856, BC 857,	OCR Scan	Q62702-C1772 Q62702-C1746 Q62702-C1884 Q62702-C1687 Q62702-C1715 Q62702-C1741 Q62702-C1704 Q62702-C1506 Q62702-C1727 Q62702-C1713 sot-23 MARKING CODE 1Gs bc 846 BC850 BC846	PDF
bc847bc Abstract: No abstract text available Text: SIEMENS PNP Silicon AF Transistors BC 856. BC 860 Features • • • • • For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 846, BC 847,	OCR Scan	Q62702-C1773 Q62702-C1886 Q62702-C1850 Q62702-C1688 Q62702-C1851 Q62702-C1742 Q62702-C1698 Q62702-C1507 Q62702-C1887 Q62702-C1774 bc847bc	PDF
bc 103 transistor Abstract: bc 106 transistor transistor BC 549 transistor bc 103 bc 104 npn transistor transistor bc 102 transistor c 548 of bc 547 b transistor bc 546 transistor Bc 580 Text: HN / BC 546.549 NPN Silicon Expitaxial Planar Transistor These transistors are subdivided into three groups A, B and C according to their current gain. The type BC546 is available in groups A and B, however, the types BC547 and BC548 can be supplied in all three groups. The BC549	OCR Scan	BC546 BC547 BC548 BC549 BC556. BC559 100mA bc 103 transistor bc 106 transistor transistor BC 549 transistor bc 103 bc 104 npn transistor transistor bc 102 transistor c 548 of bc 547 b transistor bc 546 transistor Bc 580	PDF
transistor bc 144 Abstract: TRANSISTOR Text: SIEMENS NPN Silicon AF Transistor • • • • BC 368 High current gain High collector current Low collector-emitter saturation voltage Complementary type: BC 369 PNP Type Marking Ordering Code BC 368 - C62702-C747 PinCoinfigurat ion 1 2 3 E C Package1)	OCR Scan	C62702-C747 flS35fc D12D515 023SbGS Q15051L transistor bc 144 TRANSISTOR	PDF
Untitled Abstract: No abstract text available Text: SIEMENS PNP Silicon AF Transistors BC 856W . BC 860W Features • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BC 847W, BC 848W,	OCR Scan	Q62702-C2335 Q62702-C2292 Q62702-C2293 Q62702-C2294 Q62702-C2295 Q62702-C2296 Q62702-C2297 Q62702-C2298 Q62702-C2299 Q62702-C2300	PDF
KT 819 transistor Abstract: 2N2222A 338 SF129D SF137D SSY20B KT819W SF127E KFY18 321 KP303W KFY18 Text: Deutsche Post NfD Studiotechnik Fernsehen Bauelemente - Mitteilung Nr. 6 TRANSISTORVERGLEICHSLISTE Herausgebers Halbleitervergleichsgruppe Studiotechnik Fernsehen Deutsche Post Studiotechnik Fernsehen Bauelemente-Mitteilung Nr. 6 Dez. 79 N f D T r a n s i s t o r v e r g l e i c h s l i s t e	OCR Scan		PDF
transistor 2sc 548 Abstract: equivalent transistor bc 649 BC548BC BC660 2sC 548 B Bc 648 Bc 649 transistor bc 647 BC5481 BC649 Text: asc D • asBSbos o o o m io T M S IE G NPN Silicon Transistors BC 546 - BC 550 SIEMENS AKTIENÛESELLSCHAF . 25C 04190 D - BC 546, BC 547, BC 548, BC 549 and BC 55 0 are epitaxial NPN silicon planar transistors in TO 92 plastic packages 10 A 3 DIN 41868 . They are intended for use in AF input and	OCR Scan	BC5461Â Q62702-C687 Q62702-C687-V3 Q62702-C687-V1 Q62702-C687-V2 Q62702-C688 Q62702-C688-V3 Q62702-C688-V1 Q62702-C688-V2 BC5481Â transistor 2sc 548 equivalent transistor bc 649 BC548BC BC660 2sC 548 B Bc 648 Bc 649 transistor bc 647 BC5481 BC649	PDF

BC 103 TRANSISTOR Search Results

BC 103 TRANSISTOR Result Highlights (5)

BC 103 TRANSISTOR Datasheets Context Search

DA QG

IPB085N06L

DA5 diode

5411C

BC519

Diode Marking C.3

da5 diode

Transistor 2SA 2SB 2SC 2SD

WM 53B

ksd 302 250v, 10a

Untitled

C 548 B

transistor bc 577

BC 194 TRANSISTORS

BC441

Untitled

BC478

sot-23 MARKING CODE 1Gs

bc847bc

bc 103 transistor

transistor bc 144

Untitled

KT 819 transistor

transistor 2sc 548