GK2E
Abstract: GK2BN GK2D GTO thyristor GK2C GTO thyristor driver lt 860 thyristor 800A GK20 GK-20
Text: NIHON INTER ELE CTRONICS S1E D • bblS123 0D0D03T h ■ T i- 4 / - # ? SPECIFICATIONS [El GATE DRIVER MODULES FOR GTO THYRISTOR \T y p e absolute maximum ra ting s G K2AN GK20 GK 2B N *G K 2 D 358RÛAI0O-120 A / {O3POA1OOA-120A \ 1 Ì20 PGA!OOA~I20A \ Fw 359RGAI0CM20 0T0 IFcr
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bblS123
0D0D03T
358RQAIO0-120
359BQAIO0-I2O
353POA100E-I20E
03POA100A-120A
603PGA100Ã
-120E
120IPGA1Ã
0E-120E
GK2E
GK2BN
GK2D
GTO thyristor
GK2C
GTO thyristor driver
lt 860
thyristor 800A
GK20
GK-20
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581 EL
Abstract: anode common fast recovery diode 30A PC30F8
Text: FAST RECOVERY DIODE MODULE 33A/800V/trr : 60nsec PC30F8 FEATURES ° Isolated Base ° Dual Diode Arms - Cathode Common ° Ultra - Fast Recovery ° High Surge Capability MAXIMUM R A T IN G S Approx. Net Weight : 105 Grains \ type Voltage Rating PC30F8 Unit Symbol"'-.
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3A/800V/trr
60nsec
PC30F8
D0D22Ã
bbl51i23
581 EL
anode common fast recovery diode 30A
PC30F8
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Rapa
Abstract: C60P10FE C60P20FE NOA 86
Text: C60P10FE C60P20FE 66.6A/100— 200V/trr : 50nsec FAST RECOVERY DIODE FEATURES Similar to TO-247AC X 2 Case • Dual Diodes - Cathode Common °Ultra - Fast Recovery ° Low Forward Voltage Drop * Low Forard Voltage Drop ° High Surge Capability ° 100 Volts thru 600 Volts Types Available
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A/100â
00V/trr
50nsec
C60P10FE
C60P20FE
O-247AC
00GE26D
Rapa
C60P20FE
NOA 86
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KCQ120A04E
Abstract: diode120a40v
Text: SCHOTTKY BARRIER DIODE KCQ120A04E 120A/40V FEATURES OSimilar to TO-247AC x 2 Case oDual Diodes—Cathode Common o Low Forward Voltage Drop o Low Power Loss, High Efficiency o High Surge Capability Type Voltage Rating KCQ120A04E Unit S y m b o l\. Repetitive Peak Reverse Voltage
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20A/40V
KCQ120A04E
O-247AC
bblS123
KCQ120A04E
diode120a40v
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0C28
Abstract: 200v 3A ultra fast recovery diode 6VF20CTF 40 hmr 150 DIODE 6VF10CT 6VF10CTF 6VF20CT
Text: FAST RECOVERY DIODE 6VF10CT 6VF20CT 6VF10CTF 6VF20CTF 6.6A/100~200V/trr : 30nsec FEATURES 2.38MAX .094 2.38MAX (.094) ° TO-251AA'Case • TO-252AA Case, Surface Mount Device 0.9Í.035) NOMENAL 1_ ° Ultra - Fast Recovery ° Dual Diodes - Cathode Common
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A/100
00V/trr
30nsec
6VF10CT
6VF20CT
6VF10CTF
6VF20CTF
O-251AA
O-252AA
T0-252AA
0C28
200v 3A ultra fast recovery diode
6VF20CTF
40 hmr 150 DIODE
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Untitled
Abstract: No abstract text available
Text: FAST RECOVERY DIODE 30MFG50 30MFG50R 33A/500V/trr : 70nsec FEATURES Hermetically Sealed Case ° High Reliability Device ° Ultra - Fast Recovery ° High Surge Capability * * Dimensions in mm Inches Approx. Net Weight: 14.5 Grams MAXIMUM RATINGS \ t y pe
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30MFG50
30MFG50R
3A/500V/trr
70nsec
bblS123
00G2222
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30KQ60B
Abstract: 30KQ50 30KQ50B 30KQ60
Text: SCHOTTKY BARRIER DIODE 30KQ50 30KQ60 30KQ50B 30KQ60B 33A /50~60V FEATURES « Similar to TO-247AC TO-3P Case ° Low Forward Voltage Drop • Low Power Loss, High Efficiency 0 High Surge Current Capability ° 30 Volts through 60 Volts Types Available Approx. Net Weight: 5 . 5 Grams
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3A/50
30KQ50
30KQ60
30KQ50B
30KQ60B
O-247AC
30KQ50
30KQ60B
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11EFS3
Abstract: 11EFS4
Text: FAST RECOVERY DIODE l .l A /3 0 0 ~ 4 0 0 V /t r r : 30nsec 11EFS3 11EFS4 FEATURES 2.7 .106 t ^ t * MAX U1A • Miniature Size • Ultra - Fast Recovery 0.601024) n IA 0.54(.021) » Low Forward Voltage Drop .27(1.06) MIN ° L o w Power Loss, High Efficiency
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lA/300
00V/trr
30nsec
11EFS3
11EFS4
bblS123
0213c]
11EFS4
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C25P10Q
Abstract: bdw 32 C25P09Q
Text: SCHOTTKY BARRIER DIODE C25P09Q C25P10Q 27.7A /90— 100V FEA TU RES 5.3 .2M 4.71.1851 °Similar to TO-247AC (TO-3P) Case • Dual Diodes - Cathode Common • Low Forward Voltage Drop "Low Power Loss, High Efficiency 2.2(.087W 3.2(.126)10.81.031) MAX High Surge Capability
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C25P09Q
C25P10Q
O-247AC
C25P10Q
bdw 32
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9loc
Abstract: PC80Q04N
Text: SCHOTTKY BARRIER DIODE MODULE PC80Q04N 89a /40v FEATURES ° Dual - Cathode Common to Base Plate Low Forward Voltage Drop » Low Power Loss, High Efficiency o High Surge Capability MAXIMUM R A T IN G S "\TYPE Voltage Rating Repetitive Peak Reverse Voltage per Ann
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89a/40V
PC80Q04N
PC80Q04N
i-120"
bbl51E3
OOOB12H
9loc
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30D1 diode
Abstract: 30D4 diode 30D1 30D2 30D4
Text: 30 D 1 30D2 30D4 3 A /10 0 ~ 40 0 V SILICON RECTIFIER DIODE FEA TURES 5.8 .23 DIA • Low Forward Voltage Drop - t o Low Reverse Leakage Current 1.5C059) DIA 1.3C051) ° High Surge Capability 21(.83) MIN 10(.39) MAX 1.5(.059) DIA 1.3(.051) 2K.83) . MIN Dimensions in mm (Inches)
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A/100
3C051)
bbl5123
30D1 diode
30D4 diode
30D1
30D2
30D4
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FCH20A06
Abstract: mnaf
Text: SCHOTTKY BARRIER DIODE FCH20A06 20A / 60V FEATU RES o T 0 -2 2 0 A B F ully M olded ODual D iodes - Cathode Com m on O Low F orw ard V o lta g e Drop O H igh Su rg e C apability o T j = 15 fC operation Approx. Net Weight : 1.75 Grams MAXIMUM RATINGS \ T y p e
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2OA/60V
FCH20A06
T0-220AB
10-3C
JJU34
FCH20A-
bblS123
000205b
FCH20A06
mnaf
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F5KF20B
Abstract: F5KF20 5KF20 DIODE F5KF20 5KF10 5KF20B 5KF10B fskf20 T.C 236 F5KF10
Text: FAST RECOVERY DIODE «; i a / i n n 5.5A/100 9n m //t r r • 5KF10 F5KF10 5KF20 F5KF20 2 0 0 V /tr r. 35nsec 5KF10B F5KF10B 5KF20B F5KF20B FEATURES ° Similar to T0-220AC and TO—220AB Case ° Fully Molded Isolation Case F- Type « Ultra - Fast Recovery
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5KF10
F5KF10
5KF20
F5KF20
A/100
00V/trr.
35nsec
5KF20B
F5KF20B
T0-220AC
F5KF20B
DIODE F5KF20
5KF10B
fskf20
T.C 236
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60KQ60B
Abstract: 60KQ60E 60KQ50B 60KQ50E V199 031-L
Text: SCHOTTKY BARRIER DIODE 60KQ50E 60KQ60E 60KQ50B 60KQ60B 66 A/50 ~6 0V FEATURES . -S.3i.209 ¡ D IA . Ì 7035S oSimilar to TO-247AC (TO-3P) Case <*Low Forward Voltage Drop H ° Low Power Loss, High Efficiency 5.7(224) h T o High Surge Current Capability Ä 1
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6A/50
60KQ50E
60KQ60E
60KQ50B
60KQ60B
O-247AC
47C215)
4SU14)
bblS123
60KQ60B
V199
031-L
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JRC 555
Abstract: 555 jrc PC50F PC50F5 PD50F5 10a ultra fast diode
Text: FAST RECOVERY DIODE MODULE 5 5 .5 A /5 0 0 V /trr:9 0 n s e c PC50F5 PD50F5 FEA TUR ES »Isolated Base • Dual Diode Arms - Cathode Common and Doubler Circuit “ Ultra - Fast Recovery “ High Surge Capability 7.0^27 ^ ^ »300 Volts thru 500 Volts Types Available
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A/500V/trr
90nsec
PC50F5
PD50F5
H-116
PC50F
PD50F
bbl5123
JRC 555
555 jrc
PD50F5
10a ultra fast diode
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c60p06q
Abstract: diode 66a C60P05Q
Text: SCHOTTKY BARRIER DIODE 66A / 50~ 60v cboposq csopobq FEATURES “ Similar to TO-247AC TO-3P Case 5.3(.2Q9) 4.7U 85) o Dual Diodes - Cathode Common ° Low Forward Voltage Drop Low Power Loss, High Efficiency 2.24.087) 3.2U 26). 0.8(.031) M AX • High Surge Capability
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6A/50
O-247AC
I7CTS55
1341UIA
C60P05Q
C60P06Q
a-60V
bblS123
c60p06q
diode 66a
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SMD DIODE 512
Abstract: t06 smd C20T03QLH C20T03QLH-11A 10M41
Text: SCHOTTKY BARRIER DIODE C20T03QLH C20T03QLH-11A 2o a /s o v FEATURES o | SQ U A R E -PA K j TO-263AB SMD P a c k a g e d in 24m m T a p e and R eel : C 2 0 T -Q L H O T a b le ss T 0-220 : C 2 0 T -Q L H -1 1 A o D u a l D iodes—C athode Com m on O L ow F o rw a rd V o ltag e D rop
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C20T03QLH
C20T03QLH-11A
O-263AB
T0-220
-QLH-11A
DD0n74
SMD DIODE 512
t06 smd
C20T03QLH-11A
10M41
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Untitled
Abstract: No abstract text available
Text: SCHOTTKY BARRIER DIODE 50VQ03 50VQ04 50VQ03F 50VQ04F 5.5A /30~ 4 0V FEA TU RES • TO-251AA Case o TO-252AA Case Surface Mount Device ° Low Forward Voltage Drop 0.58MAXJ ° Low Power Loss 0 High Surge Capability 0.61.024 MIN SOLDERL1NG PAD — o 7.0 .28)— -
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50VQ03
50VQ04
50VQ03F
50VQ04F
O-251AA
O-252AA
58MAXJ
50VQ03
50VQ03F
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Untitled
Abstract: No abstract text available
Text: SILICON RECTIFIER DIODE 1N4001— 1N4007 ia / ioo~ iooov FEATURES 2 .7 Ç 1 0 6 W 2.3C091 • Miniature Size ° Low Forward Voltage Drop ° Low Reverse Leakage Current 0.9 .035)nTA 0.7(.027) ° High Surge Capability 27(1.06) MIN o 52mm Inside Tape Spacing Package Available
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1N4001â
1N4007
3C091)
2C205)
1N4002
1N4003
1N4004
1N4005
1N4006
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Untitled
Abstract: No abstract text available
Text: SCHOTTKY BARRIER DIODE C25P09Q C25P10Q 27.7A /90— 100V FEATURES °Similar to TO-247AC TO-3P Case 5.3(209) 4.7(185) 5.71224) 5.3(.208) • Dual Diodes - Cathode Common • Low Forward Voltage Drop "Low Power Loss, High Efficiency 'iTLT 2.2(.087M ] f k i l H
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C25P09Q
C25P10Q
O-247AC
C25P09Q
bblS123
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Untitled
Abstract: No abstract text available
Text: SCHOTTKY BARRIER DIODE C120P03QE C120P04QE 133A/30~40V FEATURES o Similar to TO-247ACX 2 Case * Dual Diodes - Cathode Common ° Low Forward Voltage Drop ° Low Power Loss, High Efficiency ° High Surge Capability » 30 Volts through 60 Volts Types Available
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OCR Scan
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C120P03QE
C120P04QE
33A/30
O-247ACX
D0GE113
bblS123
DQQ2114
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Untitled
Abstract: No abstract text available
Text: 60KQ50E 60KQ60E 60KQ50B 60KQ60B 66A/50~60V SCHOTTKY BARRIER DIODE FEATURES 5.9C626 Similar to TO-247AC TO-3P) Case 5.7(^241 o Low Forward Voltage Drop i$mr 5.71224) y 3.4{.134) -Tfp- 20.3(.8Q0) ï£ï(.775) 4.3(.169) 3.7(.145> 0 Low Power Loss, High Efficiency
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60KQ50E
60KQ60E
60KQ50B
60KQ60B
6A/50
9C626)
O-247AC
bblS123
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Untitled
Abstract: No abstract text available
Text: 2VQ09CT 2VQ10CT 2VQ09CTF 2VQ10CTF 2.2A/90— 100V SCHOTTKY BARRIER DIODE FEATURES « TO-251AA Case »TO-252AA Case, Surface Mount Device 0 Dual Diodes - Cathode Common ° Low Forward Voltage Drop Low Power Loss ° High Surge Capability • 30 Volts thru 100 Volts
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2VQ09CT
2VQ10CT
2VQ09CTF
2VQ10CTF
O-251AA
O-252AA
2VQ09CT
2VQ09CTF
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Untitled
Abstract: No abstract text available
Text: SCHOTTKY BARRIER DIODE C20T04Q C20T04Q-11A 22A/40V GCQ20A04 FCQ20A04 FEATU RES O |SOUARE-PAk ITO-263AB SMD Packaged in 24mm Tape and Reel : C20T04Q o Tabless TO-220: C20T04Q-11A o TO-220AB : GCQ20A04 o TO-220AB Fully Molded Isolation : FCQ20A04 o Dual Diodes - Cathode
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C20T04Q
C20T04Q-11A
2A/40V
GCQ20A04
FCQ20A04
ITO-263AB
O-220:
O-220AB
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