Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE b'lE D • bb53R31 0D3Q47S 34R M A P X Philips Semiconductors Product specmcauon Pow erM OS transistor G E N E R A L D E SC R IP TIO N N-channel enhancement mode field-effect power transistor in a lastic envelope. he device is intended for use in
|
OCR Scan
|
PDF
|
bb53R31
0D3Q47S
BUK436-1000B
bbS3T31
|
Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE b'JE D bb53R31 OQSbSlfi DOT APX B Y /U t BY706 SILICON EHT SOFT-RECOVERY RECTIFIER DIODES EHT rectifier diodes in glass envelopes intended for use in general purpose high-voltage applications. The devices feature non-snap-off characteristics. Because o f the small envelope, the diodes should be
|
OCR Scan
|
PDF
|
bb53R31
BY706
BY705
002fci52Q
|
Untitled
Abstract: No abstract text available
Text: bb53R31 0 0 3 1 5 2 6 3T0 • APX Philips Semiconductors Product specification PNP 5 GHz wideband transistor — — — — — -— DESCRIPTION BFQ24 ■ N AUER PHILIPS/DISCRETE bRE » PINNING PNP transistor in a TO-72 metal envelope with insulated electrodes
|
OCR Scan
|
PDF
|
bb53R31
BFQ24
BFQ22S.
MEA371
MEA365
MEA372
|
Untitled
Abstract: No abstract text available
Text: bb53R31 0 0 3 2 3 5 3 bfll M AP X Philips Sem iconductors Product specification CATV amplifier module BGY67 N APER PHILIPS/DISCRETE PINNING-SOT115C FEATURES PIN • Excellent linearity PIN CONFIGURATION DESCRIPTION • Extremely low noise 1 input • Silicon nitride passivation
|
OCR Scan
|
PDF
|
bb53R31
BGY67
PINNING-SOT115C
DIN45004B;
|
Untitled
Abstract: No abstract text available
Text: AflER PHILIPS/DISCRETE Philips Semiconductors bRE T> m bb53R31 002A33R flS7 « A P X Product Specification Silicon Diffused Power Transistor BU2508A GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelope
|
OCR Scan
|
PDF
|
bb53R31
002A33R
BU2508A
00EB343
|
Untitled
Abstract: No abstract text available
Text: I N AflER PHILIPS/DISCRETE I bb53R31 DDSflS3fl T3T blE D B U 505 BU505D SILICON DIFFUSED POWER TRANSISTOR High-voltage, high-speed switching npn power transistor in a TO-220 envelope intended fo r use in horizontal deflection circuits o f colour television receivers. The BU505D has an integrated efficiency
|
OCR Scan
|
PDF
|
bb53R31
BU505D
O-220
BU505D
BU505D)
bbS3T31
0D26243
|
Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE bRE T> bb53R31 DD2bR44 &E5 HAPX Philips Semiconductors Product specification Silicon planar epitaxial BAL74W high-speed diode FEATURES QUICK REFERENCE DATA • Plastic SMD envelope SYMBOL • High switching speed Vr MAX. UNIT continuous reverse
|
OCR Scan
|
PDF
|
bb53R31
DD2bR44
BAL74W
|
Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE D bb53R31 0030540 TOO • APX Product Specification Philips Semiconductors BUK444-600B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a lastic full-pack envelope, he device is intended for use in
|
OCR Scan
|
PDF
|
bb53R31
BUK444-600B
PINNING-SOT186
bb53T31
0D305l
|
Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE bRE D bb53R31 003040? flTfl M A R X Product Specification Philips Semiconductors BUK104-50L/S BUK104-50LP/SP PowerMOS transistor Logic level TOPFET_ DESCRIPTION Monolithic temperature and overloadprotected logic level power MOSFET in a 5 pin plastic
|
OCR Scan
|
PDF
|
bb53R31
BUK104-50L/S
BUK104-50LP/SP
|
bry39
Abstract: BRY39 circuit
Text: N AMER PHILIPS/MSCRETE bTE 3> bb53R31 0057635 R6T Philips Semiconductors Data sheet status Preliminary specification date of Issue December 1990 BRY39 Programmable unijunction transistor QUICK REFERENCE DATA PARAMETER PIN cathode 2 cathode gate 3 anode gate
|
OCR Scan
|
PDF
|
bb53R31
BRY39
0D27fl3b
bry39
BRY39 circuit
|
Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE bR E » bb53R31 0030625 4M7 « A P X Preliminary Specification Philips Semiconductors BUK556-60H PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope.
|
OCR Scan
|
PDF
|
bb53R31
BUK556-60H
O220AB
bbS3T31
QD30fl2fl
|
OM345
Abstract: philips om345
Text: • bb53R31 003242b S34 * A P X I N AMER PHILIPS/DISCRETE b^E D _ J OM345 \ _ HYBRID INTEGRATED CIRCUIT VHF/UHF WIDE-BAND AMPLIFIER One-stage wide-band am plifier in hybrid integrated circu it technique on a th in -film substrate,
|
OCR Scan
|
PDF
|
bb53R31
003242b
OM345
OM345
philips om345
|
Untitled
Abstract: No abstract text available
Text: N AMER P H I L I P S / D I S C R E T E fc.^E bb53R31 ]> 0027077 Philips Semiconductors T20 «A PX Product specification Schottky barrier diodes PBYR2100CT series QUICK REFERENCE DATA FEATURES • Double diode in SMD power package • Low turn-on and high breakdown
|
OCR Scan
|
PDF
|
bb53R31
PBYR2100CT
PBYR280CT
PBYR290CT
PBYR21OOCT
PBYR2100CT
|
Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE bRE D • bb53R31 DD30372 7SR H A P X Philips Sem iconductors Product Specification PowerMOS transistor TOPFET DESCRIPTION Monolithic temperature and overload protected power MOSFET in a 3 pin plastic envelope, intended as a general purpose switch for
|
OCR Scan
|
PDF
|
bb53R31
DD30372
BUK101-50GS
D50GS
s/lls25
|
|
|
BSX32
Abstract: MB125
Text: N AMER PHILIPS/DISCRETE bTE D m bb53R31 DQE7T1S Til I IAPX I SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N silicon planar ep itaxial transistor in a T O -3 9 encapsulation. Th e B S X 3 2 is designed fo r use in high cu rren t switching applications. Q U IC K R E F E R E N C E D A T A
|
OCR Scan
|
PDF
|
bb53R31
D027T15
BSX32
BSX32
MB125
|
Untitled
Abstract: No abstract text available
Text: bb53R31 0D2707D b7b * A P X bRE D N AUER PH ILI PS/ DIS CRET E Philips Semiconductors Product specification Voltage regulator diodes DESCRIPTION BZG03 series QUICK REFERENCE DATA High reliability glass-passivated diodes in a small rectangular SMD SOD106A envelope. The envelope
|
OCR Scan
|
PDF
|
bb53R31
0D2707D
BZG03
OD106A
DO-214AC
BZG03-C10
BZG03-C270
|
Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE bTE ]> bb53R31 0030610 Tib « A P X Philips Semiconductors Product Specification PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope.
|
OCR Scan
|
PDF
|
bb53R31
T0220AB
BUK555-1OOA/B
BUK555
BUK555-100A/B
|
Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE b*fE D bb53R31 QQ27QQ7 bQ7 «APX Philips Semiconductors Product specification Very fast soft-recovery avalanche BYD57 series rectifier diodes QUICK REFERENCE DATA DESCRIPTION Glass passivated epitaxial rectifier diodes in hermetically sealed
|
OCR Scan
|
PDF
|
bb53R31
QQ27QQ7
BYD57
BYD57D
BYD57G
BYD57J
BYD57K
BYD57M
|
Untitled
Abstract: No abstract text available
Text: N A UE R bb53R31 OQEbTTl bHl « A P X bRE » PHILIPS/DISCRETE Philips Semiconductors Product specification Silicon planar epitaxial high-speed double diode FEATURES • Plastic SMD envelope • High switching speed BAV99W QUICK REFERENCE DATA SYMBOL CONDITIONS
|
OCR Scan
|
PDF
|
bb53R31
BAV99W
|
K545
Abstract: No abstract text available
Text: N AI1ER PHILIPS/DISCRETE b 'lE I> bb53R31 DD3D7bS 14E « A P X Product Specification Philips Semiconductors BU K545-1OOA/B PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack
|
OCR Scan
|
PDF
|
bb53R31
K545-1OOA/B
PINNING-SOT186
BUK545
003D7bS
BUK545-100A/B
K545
|
Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE bRE » bb53R31 D D S b n ? DbT « A P X Philips Semiconductors Product specification Silicon planar epitaxial high-speed double diode FEATURES • Plastic SMD envelope • High switching speed • General application. BAW56W QUICK REFERENCE DATA
|
OCR Scan
|
PDF
|
bb53R31
BAW56W
OT323
|
Untitled
Abstract: No abstract text available
Text: b^E D N AMER P H I L I P S / D I S C R E T E bb53R31 0Q32532 Philips Semiconductors 71T W A P X Preliminary specification CATV amplifier module FEATURES BGY883 PINNING - SOT115J2 • Excellent linearity PIN DESCRIPTION • Extremely low noise 1 input • Silicon nitride passivation
|
OCR Scan
|
PDF
|
bb53R31
0Q32532
BGY883
OT115J2
BGY883
|
Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE bb53R31 QDEb^Sb S47 H A P X bRE D Philips Semiconductors Product specification Silicon planar epitaxial high-speed diode FEATURES • Plastic SMD envelope • High switching speed BAS16W QUICK REFERENCE DATA SYMBOL MAX. UNIT continuous reverse
|
OCR Scan
|
PDF
|
bb53R31
BAS16W
|
Untitled
Abstract: No abstract text available
Text: N ANER PHILIPS/DISCRETE bRE D • bb53R31 QQ272RQ 22b « A P X BT149 SERIES THYRISTORS Fully-diffused thyristors in TO—92 package, with low gate current requirement suitable fo r driving from IC outputs. Applications include relay and coil pulsing, control of small DC motors, small lamps,
|
OCR Scan
|
PDF
|
bb53R31
QQ272RQ
BT149
BT149-B
|