BB506M

Contextual Info: BB506M Built in Biasing Circuit MOS FET IC UHF RF Amplifier REJ03G1604-0100 Rev.1.00 Nov 26, 2007 Features • Built in Biasing Circuit; To reduce using parts cost & PC board space. • High gain PG = 24 dB typ. f = 900 MHz • Low noise NF = 1.4 dB typ. (f = 900 MHz)

Contextual Info: Preliminary Datasheet BB506M R07DS0289EJ0200 Previous: REJ03G1604-0100 Rev.2.00 Mar 28, 2011 Build in Biasing Circuit MOS FET IC UHF RF Amplifier Features • Build in Biasing Circuit; To reduce using parts cost & PC board space.  High gain PG = 24 dB typ. (f = 900 MHz)

BB506M

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid