marking BAX
Abstract: BAX marking E6327 Q67000-S280 DIN IEC 68-1 Diode BAx
Text: FRED Diode BAX 280 Preliminary Data ● VRRM 1000 V ● IFRMS 5.5 A ● trr 55 ns ● Soft recovery characteristics Type Ordering Code Tape and Reel Information BAX 280 Q67000-S280 E6327: 1000 pcs/reel Pin Configuration 1 2 3 4 not con- A nected C A Marking
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Original
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Q67000-S280
E6327:
OT-223
50-Hz
marking BAX
BAX marking
E6327
DIN IEC 68-1
Diode BAx
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PDF
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S279
Abstract: IGBT Transistor bsp280 BAX marking bipolar transistor td tr ts tf marking BAX E6327 Q67000-S279
Text: IGBT Transistor BSP 280 Preliminary Data ● ● ● ● ● ● ● ● VCE 1000 V I C 2.5 A N channel MOS input voltage-controlled High switch speed Very low tail current Latch-up free Suitable freewheeling diode BAX 280 Type Ordering Code Tape and Reel
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Original
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Q67000-S279
OT-223
E6327:
S279
IGBT Transistor
bsp280
BAX marking
bipolar transistor td tr ts tf
marking BAX
E6327
Q67000-S279
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PDF
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MBM29F200BA-90-X
Abstract: diode MARKING CODE A9 FPT-48P-M19 FPT-48P-M20 MBM29F200BA
Text: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-20838-1E FLASH MEMORY CMOS 2 M 256 K x 8/128 K × 16 BIT MBM29F200TA-90-X/-12-X/MBM29F200BA-90-X/-12-X • FEATURES • Single 5.0 V read, program, and erase Minimizes system level power requirements
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Original
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DS05-20838-1E
9F200TA-90-X/-12-X/MBM29F200BA-90-X/-12-X
44-pin
48-pin
F9702
MBM29F200BA-90-X
diode MARKING CODE A9
FPT-48P-M19
FPT-48P-M20
MBM29F200BA
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PDF
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MT49H16M18C
Abstract: No abstract text available
Text: ADVANCE‡ 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II 288Mb SIO REDUCED LATENCY RLDRAM II MT49H16M18C MT49H32M9C FEATURES Figure 1 144-Ball µBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization - 16 Meg x 18, 32 Meg x 9 Separate I/O
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Original
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288Mb
288Mb
clo68-3900
MT49H16M18C
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PDF
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smd dk qk
Abstract: SMD MARKING CODE ACY smd marking codes BA5 smd marking codes BA2 RLDRAM MT49H16M18C
Text: ADVANCE‡ 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II 288Mb SIO REDUCED LATENCY RLDRAM II MT49H16M18C MT49H32M9C FEATURES Figure 1 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization - 16 Meg x 18, 32 Meg x 9 Separate I/O
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Original
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288Mb
288Mb
clo68-3900
MT49H16M18C
smd dk qk
SMD MARKING CODE ACY
smd marking codes BA5
smd marking codes BA2
RLDRAM
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PDF
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smd marking codes BA5
Abstract: MT49H16M18C
Text: ADVANCE‡ 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II 288Mb SIO REDUCED LATENCY RLDRAM II MT49H16M18C MT49H32M9C FEATURES Figure 1 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization - 16 Meg x 18, 32 Meg x 9 Separate I/O
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Original
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288Mb
288Mb
MT49H16M18C
smd marking codes BA5
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PDF
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SMD d1c
Abstract: SMD MARKING CODE ACY qkx capacitor smd codes marking A21 MT49H16M18C
Text: ADVANCE‡ 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II 288Mb SIO REDUCED LATENCY RLDRAM II MT49H16M18C MT49H32M9C FEATURES Figure 1 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization - 16 Meg x 18, 32 Meg x 9 Separate I/O
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Original
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288Mb
288Mb
clo68-3900
MT49H16M18C
SMD d1c
SMD MARKING CODE ACY
qkx capacitor
smd codes marking A21
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PDF
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MT49H16M18
Abstract: No abstract text available
Text: ADVANCE‡ 8 MEG x 36, 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, RLDRAM II 288Mb CIO REDUCED LATENCY RLDRAM II MT49H8M36 MT49H16M18 MT49H32M9 FEATURES Figure 1 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization
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Original
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288Mb
288Mb
output0006,
MT49H8M36
MT49H16M18
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PDF
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marking code a02 SMD Transistor
Abstract: transistor SMD DK MT49H16M18 smd transistor marking d1c Diode A3X transistor smd marking BA RE marking BAX smd cod plastic BA5 marking code A22 SMD MARKING CODE
Text: ADVANCE‡ 8 MEG x 36, 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, RLDRAM II 288Mb CIO REDUCED LATENCY RLDRAM II MT49H8M36 MT49H16M18 MT49H32M9 FEATURES Figure 1 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization
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Original
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288Mb
MT49H8M36
MT49H16M18
MT49H32M9
144-Ball
288Mb
MT49H8M36
marking code a02 SMD Transistor
transistor SMD DK
MT49H16M18
smd transistor marking d1c
Diode A3X
transistor smd marking BA RE
marking BAX
smd cod
plastic BA5 marking code
A22 SMD MARKING CODE
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PDF
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MT49H16M18
Abstract: No abstract text available
Text: ADVANCE‡ 8 MEG x 36, 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, RLDRAM II 288Mb CIO REDUCED LATENCY RLDRAM II MT49H8M36 MT49H16M18 MT49H32M9 FEATURES Figure 1 144-Ball µBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization
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Original
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288Mb
288Mb
output0006,
MT49H8M36
MT49H16M18
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PDF
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MARKING H1 AMP
Abstract: MT49H16M18
Text: ADVANCE‡ 8 MEG x 36, 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, RLDRAM II 288Mb CIO REDUCED LATENCY RLDRAM II MT49H8M36 MT49H16M18 MT49H32M9 FEATURES Figure 1 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization
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Original
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288Mb
288Mb
output0006,
MT49H8M36
MARKING H1 AMP
MT49H16M18
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PDF
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plastic BA7 marking code
Abstract: No abstract text available
Text: ADVANCE‡ 8 MEG x 36, 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, RLDRAM II 288Mb CIO REDUCED LATENCY RLDRAM II MT49H8M36 MT49H16M18 MT49H32M9 FEATURES Figure 1 144-Ball µBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization
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Original
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288Mb
288Mb
output0006,
MT49H8M36
plastic BA7 marking code
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PDF
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Untitled
Abstract: No abstract text available
Text: 2GB 4GB X64, SR, DR : 204-Pin DDR3 SDRAM SODIMM SDRAM DDR3 256M, 512M X 64 SODIMM 204-Pin 4GB SODIMM Assembly Features: • DDR3 functionality and operations supported as defined in the component data sheet
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Original
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204-Pin
PC3-10600,
DDR3-1333
256MX64)
8125us
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PDF
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Untitled
Abstract: No abstract text available
Text: 2GB, 4GB X64, SR, DR : 240-Pin DDR3 SDRAM UDIMM SDRAM DDR3 256M, 512M X 64 UDIMM Features: • DDR3 functionality and operations supported as per component data sheet ROHS Complaint 240 pin unbuffered dual in-line memory module
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Original
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240-Pin
PC3-10600,
PC3-8500
DDR3-1066
DDR3-1333
256MX64)
512MX64)
8125us
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PDF
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Untitled
Abstract: No abstract text available
Text: FLASH MEMORY B l I l i 2 M 256 K x 8/128 K x 16 BIT M B M 2 9 F 2 0 0 T A - 90- X - 12- x / M B M 2 9 F 2 0 0 B A - 90- x - 12- x
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OCR Scan
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44-pin
48-pin
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PDF
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flash 48pin dqs
Abstract: programming mbm29F400
Text: FLASHM EM ORY CMOS M BM29F40GTA/BÄÄx^i 2-x • FEATURES • • • • • • • • • • • • • • • Single 5.0V read, write, and erase Minimizes system level power requirements Compatible with JEDEC-standard commands Uses same software commands as EzPROMs
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OCR Scan
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BM29F40GTA/BÄ
48-pin
44-pin
F9704
flash 48pin dqs
programming mbm29F400
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PDF
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FLASH MEMORY 29F
Abstract: 29f200ta 200ta FLASH 29F 29f200ba MBM29F200BA
Text: M B M29F200TA-90-X-1 2-x/M B M29 F200BA -90 X/' 12-X FEATURES • Single 5.0 V read, program, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs • Compatible with JEDEC-standard world-wide pinouts
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OCR Scan
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M29F200TA-90-X-1
F200BA
44-pin
48-pin
FLASH MEMORY 29F
29f200ta
200ta
FLASH 29F
29f200ba
MBM29F200BA
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PDF
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46-PIN 29lv
Abstract: fujtsu
Text: FLASH MEMORY ¡BIMBIllMIBjiBIB IB IlijB lliiB illjB IB IIS lMllliillB H I 8M 1M x 8/512K x 16 BIT MBM29LV800TA-9o-)ü-i 2.x/MBM29LV800BA-»o-xm2.x • FEATURES • Single 3.0 V read, program, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands
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OCR Scan
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8/512K
MBM29LV800TA-9o
x/MBM29LV800BA-
48-pin
44-pin
46-pin
48-ball
46-PIN 29lv
fujtsu
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PDF
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Untitled
Abstract: No abstract text available
Text: 8 SUGGESTED PANEL CUTOUT 1 A~tC. n 7 RT SPECIFICATIONS FUNCTION: 2P 2T O N — OFF— (ON) RATINGS: 20A 1 2 5 VAC, 15A 277VAC 2HP 12 5 /2 5 0 V A C APPROVALS: n, « MATERIALS_ BODY: PA66 ROCKER: PA66 CONTACTS: S ilve r P la ted C o p p e r
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OCR Scan
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277VAC
34-RVW4Z02D1200
RVW4Z02D1200
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PDF
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Untitled
Abstract: No abstract text available
Text: 8 SCHEMATIC 1.240 [31,5] SP EC IFIC A T IO N S FUNCTION: 1P2T ON-ON 0.827 [21,0] RATINGS: 20A 125VAC [UL. cUL] 16A 250VAC [UL, cUL] 3 / 4 HP 250VAC [UL, cUL] 16 4 A 250V~T85 [European] 10(2)A 250V~5E4 [European] ELECTRICAL LIFE: 10,000 Cycles CONTACT RESISTANCE:
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OCR Scan
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125VAC
250VAC
100MQ
500VDC
1000VAC
UL94V-2
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PDF
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Untitled
Abstract: No abstract text available
Text: 8 1.240 [31,5] SCHEMATIC SP EC IFIC A T IO N S FUNCTION: 1P2T O N -O FF-O N 0.827 [21,0] RATINGS: 20A 125VAC [UL. cUL] 16A 250VAC [UL, cUL] 3 / 4 HP 250VAC [UL, cUL] 16 4 A 250V~T85 [European] 10(2)A 250V~5E4 [European] ELECTRICAL LIFE: 10,000 Cycles CONTACT RESISTANCE:
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OCR Scan
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125VAC
250VAC
100MQ
500VDC
1000VAC
UL94V-2
UL94V
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PDF
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Untitled
Abstract: No abstract text available
Text: 8 1.240 [31,5] SCHEMATIC SP EC IFIC A T IO N S FUNCTION: 1P2T O N -O FF-O N 0.827 [21,0] RATINGS: 20A 125VAC [UL. cUL] 16A 250VAC [UL, cUL] 3 / 4 HP 250VAC [UL, cUL] 16 4 A 250V~T85 [European] 10(2)A 250V~5E4 [European] O II ELECTRICAL LIFE: 10,000 Cycles
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OCR Scan
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125VAC
250VAC
100MQ
500VDC
1000VAC
UL94V-2
UL94V
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PDF
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Untitled
Abstract: No abstract text available
Text: 8 1.240 [31,5] SCHEMATIC SP EC IFIC A T IO N S FUNCTION: 1P2T O N -O FF-O N 0.827 [21,0] RATINGS: 20A 125VAC [UL. cUL] 16A 250VAC [UL, cUL] 3 / 4 HP 250VAC [UL, cUL] 16 4 A 250V~T85 [European] 10(2)A 250V~5E4 [European] I O II ELECTRICAL LIFE: 10,000 Cycles
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OCR Scan
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125VAC
250VAC
100MQ
500VDC
1000VAC
UL94V-2
UL94V
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PDF
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Untitled
Abstract: No abstract text available
Text: 8 SCHEMATIC 1,240 [31,5] SPECIFICATIONS FUNCTION: 1P1T O FF-O N 0,827 [21.0] ON RATINGS: 20A 125VAC [UL, cUL] 16A 250VAC [UL, cUL] 3 / 4 HP 250VAC [UL, cUL] 16 4 A 250V~ 1E4 T125 [European] 10(2)A 250V~ 5E4 T125 [European] OFF ELECTRICAL LIFE: 10,000 Cycles
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OCR Scan
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125VAC
250VAC
100Mi2
500VDC
10OOVAC
972BB
1D2A84
RSC211D2A84
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PDF
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