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    BAX MARKING Search Results

    BAX MARKING Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy
    54AC20/SDA-R Rochester Electronics LLC 54AC20/SDA-R - Dual marked (M38510R75003SDA) Visit Rochester Electronics LLC Buy
    UHD503R/883 Rochester Electronics LLC UHD503R/883 - Dual marked (5962-8855101CA) Visit Rochester Electronics LLC Buy

    BAX MARKING Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    marking BAX

    Abstract: BAX marking E6327 Q67000-S280 DIN IEC 68-1 Diode BAx
    Text: FRED Diode BAX 280 Preliminary Data ● VRRM 1000 V ● IFRMS 5.5 A ● trr 55 ns ● Soft recovery characteristics Type Ordering Code Tape and Reel Information BAX 280 Q67000-S280 E6327: 1000 pcs/reel Pin Configuration 1 2 3 4 not con- A nected C A Marking


    Original     		PDF Q67000-S280 E6327: OT-223 50-Hz marking BAX BAX marking E6327 DIN IEC 68-1 Diode BAx

    S279

    Abstract: IGBT Transistor bsp280 BAX marking bipolar transistor td tr ts tf marking BAX E6327 Q67000-S279
    Text: IGBT Transistor BSP 280 Preliminary Data ● ● ● ● ● ● ● ● VCE 1000 V I C 2.5 A N channel MOS input voltage-controlled High switch speed Very low tail current Latch-up free Suitable freewheeling diode BAX 280 Type Ordering Code Tape and Reel


    Original     		PDF Q67000-S279 OT-223 E6327: S279 IGBT Transistor bsp280 BAX marking bipolar transistor td tr ts tf marking BAX E6327 Q67000-S279

    MBM29F200BA-90-X

    Abstract: diode MARKING CODE A9 FPT-48P-M19 FPT-48P-M20 MBM29F200BA
    Text: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-20838-1E FLASH MEMORY CMOS 2 M 256 K x 8/128 K × 16 BIT MBM29F200TA-90-X/-12-X/MBM29F200BA-90-X/-12-X • FEATURES • Single 5.0 V read, program, and erase Minimizes system level power requirements


    Original     		PDF DS05-20838-1E 9F200TA-90-X/-12-X/MBM29F200BA-90-X/-12-X 44-pin 48-pin F9702 MBM29F200BA-90-X diode MARKING CODE A9 FPT-48P-M19 FPT-48P-M20 MBM29F200BA

    MT49H16M18C

    Abstract: No abstract text available
    Text: ADVANCE‡ 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II 288Mb SIO REDUCED LATENCY RLDRAM II MT49H16M18C MT49H32M9C FEATURES Figure 1 144-Ball µBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization - 16 Meg x 18, 32 Meg x 9 Separate I/O


    Original     		PDF 288Mb 288Mb clo68-3900 MT49H16M18C

    smd dk qk

    Abstract: SMD MARKING CODE ACY smd marking codes BA5 smd marking codes BA2 RLDRAM MT49H16M18C
    Text: ADVANCE‡ 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II 288Mb SIO REDUCED LATENCY RLDRAM II MT49H16M18C MT49H32M9C FEATURES Figure 1 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization - 16 Meg x 18, 32 Meg x 9 Separate I/O


    Original     		PDF 288Mb 288Mb clo68-3900 MT49H16M18C smd dk qk SMD MARKING CODE ACY smd marking codes BA5 smd marking codes BA2 RLDRAM

    smd marking codes BA5

    Abstract: MT49H16M18C
    Text: ADVANCE‡ 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II 288Mb SIO REDUCED LATENCY RLDRAM II MT49H16M18C MT49H32M9C FEATURES Figure 1 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization - 16 Meg x 18, 32 Meg x 9 Separate I/O


    Original     		PDF 288Mb 288Mb MT49H16M18C smd marking codes BA5

    SMD d1c

    Abstract: SMD MARKING CODE ACY qkx capacitor smd codes marking A21 MT49H16M18C
    Text: ADVANCE‡ 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II 288Mb SIO REDUCED LATENCY RLDRAM II MT49H16M18C MT49H32M9C FEATURES Figure 1 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization - 16 Meg x 18, 32 Meg x 9 Separate I/O


    Original     		PDF 288Mb 288Mb clo68-3900 MT49H16M18C SMD d1c SMD MARKING CODE ACY qkx capacitor smd codes marking A21

    MT49H16M18

    Abstract: No abstract text available
    Text: ADVANCE‡ 8 MEG x 36, 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, RLDRAM II 288Mb CIO REDUCED LATENCY RLDRAM II MT49H8M36 MT49H16M18 MT49H32M9 FEATURES Figure 1 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization


    Original     		PDF 288Mb 288Mb output0006, MT49H8M36 MT49H16M18

    marking code a02 SMD Transistor

    Abstract: transistor SMD DK MT49H16M18 smd transistor marking d1c Diode A3X transistor smd marking BA RE marking BAX smd cod plastic BA5 marking code A22 SMD MARKING CODE
    Text: ADVANCE‡ 8 MEG x 36, 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, RLDRAM II 288Mb CIO REDUCED LATENCY RLDRAM II MT49H8M36 MT49H16M18 MT49H32M9 FEATURES Figure 1 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization


    Original     		PDF 288Mb MT49H8M36 MT49H16M18 MT49H32M9 144-Ball 288Mb MT49H8M36 marking code a02 SMD Transistor transistor SMD DK MT49H16M18 smd transistor marking d1c Diode A3X transistor smd marking BA RE marking BAX smd cod plastic BA5 marking code A22 SMD MARKING CODE

    MT49H16M18

    Abstract: No abstract text available
    Text: ADVANCE‡ 8 MEG x 36, 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, RLDRAM II 288Mb CIO REDUCED LATENCY RLDRAM II MT49H8M36 MT49H16M18 MT49H32M9 FEATURES Figure 1 144-Ball µBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization


    Original     		PDF 288Mb 288Mb output0006, MT49H8M36 MT49H16M18

    MARKING H1 AMP

    Abstract: MT49H16M18
    Text: ADVANCE‡ 8 MEG x 36, 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, RLDRAM II 288Mb CIO REDUCED LATENCY RLDRAM II MT49H8M36 MT49H16M18 MT49H32M9 FEATURES Figure 1 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization


    Original     		PDF 288Mb 288Mb output0006, MT49H8M36 MARKING H1 AMP MT49H16M18

    plastic BA7 marking code

    Abstract: No abstract text available
    Text: ADVANCE‡ 8 MEG x 36, 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, RLDRAM II 288Mb CIO REDUCED LATENCY RLDRAM II MT49H8M36 MT49H16M18 MT49H32M9 FEATURES Figure 1 144-Ball µBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization


    Original     		PDF 288Mb 288Mb output0006, MT49H8M36 plastic BA7 marking code

    Untitled

    Abstract: No abstract text available
    Text: 2GB 4GB X64, SR, DR : 204-Pin DDR3 SDRAM SODIMM SDRAM DDR3 256M, 512M X 64 SODIMM 204-Pin 4GB SODIMM Assembly Features: •               DDR3 functionality and operations supported as defined in the component data sheet


    Original     		PDF 204-Pin PC3-10600, DDR3-1333 256MX64) 8125us

    Untitled

    Abstract: No abstract text available
    Text: 2GB, 4GB X64, SR, DR : 240-Pin DDR3 SDRAM UDIMM SDRAM DDR3 256M, 512M X 64 UDIMM Features: •              DDR3 functionality and operations supported as per component data sheet ROHS Complaint 240 pin unbuffered dual in-line memory module


    Original     		PDF 240-Pin PC3-10600, PC3-8500 DDR3-1066 DDR3-1333 256MX64) 512MX64) 8125us

    Untitled

    Abstract: No abstract text available
    Text: FLASH MEMORY B l I l i 2 M 256 K x 8/128 K x 16 BIT M B M 2 9 F 2 0 0 T A - 90- X - 12- x / M B M 2 9 F 2 0 0 B A - 90- x - 12- x


    OCR Scan     		PDF 44-pin 48-pin

    flash 48pin dqs

    Abstract: programming mbm29F400
    Text: FLASHM EM ORY CMOS M BM29F40GTA/BÄÄx^i 2-x • FEATURES • • • • • • • • • • • • • • • Single 5.0V read, write, and erase Minimizes system level power requirements Compatible with JEDEC-standard commands Uses same software commands as EzPROMs


    OCR Scan     		PDF BM29F40GTA/BÄ 48-pin 44-pin F9704 flash 48pin dqs programming mbm29F400

    FLASH MEMORY 29F

    Abstract: 29f200ta 200ta FLASH 29F 29f200ba MBM29F200BA
    Text: M B M29F200TA-90-X-1 2-x/M B M29 F200BA -90 X/' 12-X FEATURES • Single 5.0 V read, program, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs • Compatible with JEDEC-standard world-wide pinouts


    OCR Scan     		PDF M29F200TA-90-X-1 F200BA 44-pin 48-pin FLASH MEMORY 29F 29f200ta 200ta FLASH 29F 29f200ba MBM29F200BA

    46-PIN 29lv

    Abstract: fujtsu
    Text: FLASH MEMORY ¡BIMBIllMIBjiBIB IB IlijB lliiB illjB IB IIS lMllliillB H I 8M 1M x 8/512K x 16 BIT MBM29LV800TA-9o-)ü-i 2.x/MBM29LV800BA-»o-xm2.x • FEATURES • Single 3.0 V read, program, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands


    OCR Scan     		PDF 8/512K MBM29LV800TA-9o x/MBM29LV800BA- 48-pin 44-pin 46-pin 48-ball 46-PIN 29lv fujtsu

    Untitled

    Abstract: No abstract text available
    Text: 8 SUGGESTED PANEL CUTOUT 1 A~tC. n 7 RT SPECIFICATIONS FUNCTION: 2P 2T O N — OFF— (ON) RATINGS: 20A 1 2 5 VAC, 15A 277VAC 2HP 12 5 /2 5 0 V A C APPROVALS: n, « MATERIALS_ BODY: PA66 ROCKER: PA66 CONTACTS: S ilve r P la ted C o p p e r


    OCR Scan     		PDF 277VAC 34-RVW4Z02D1200 RVW4Z02D1200

    Untitled

    Abstract: No abstract text available
    Text: 8 SCHEMATIC 1.240 [31,5] SP EC IFIC A T IO N S FUNCTION: 1P2T ON-ON 0.827 [21,0] RATINGS: 20A 125VAC [UL. cUL] 16A 250VAC [UL, cUL] 3 / 4 HP 250VAC [UL, cUL] 16 4 A 250V~T85 [European] 10(2)A 250V~5E4 [European] ELECTRICAL LIFE: 10,000 Cycles CONTACT RESISTANCE:


    OCR Scan     		PDF 125VAC 250VAC 100MQ 500VDC 1000VAC UL94V-2

    Untitled

    Abstract: No abstract text available
    Text: 8 1.240 [31,5] SCHEMATIC SP EC IFIC A T IO N S FUNCTION: 1P2T O N -O FF-O N 0.827 [21,0] RATINGS: 20A 125VAC [UL. cUL] 16A 250VAC [UL, cUL] 3 / 4 HP 250VAC [UL, cUL] 16 4 A 250V~T85 [European] 10(2)A 250V~5E4 [European] ELECTRICAL LIFE: 10,000 Cycles CONTACT RESISTANCE:


    OCR Scan     		PDF 125VAC 250VAC 100MQ 500VDC 1000VAC UL94V-2 UL94V

    Untitled

    Abstract: No abstract text available
    Text: 8 1.240 [31,5] SCHEMATIC SP EC IFIC A T IO N S FUNCTION: 1P2T O N -O FF-O N 0.827 [21,0] RATINGS: 20A 125VAC [UL. cUL] 16A 250VAC [UL, cUL] 3 / 4 HP 250VAC [UL, cUL] 16 4 A 250V~T85 [European] 10(2)A 250V~5E4 [European] O II ELECTRICAL LIFE: 10,000 Cycles


    OCR Scan     		PDF 125VAC 250VAC 100MQ 500VDC 1000VAC UL94V-2 UL94V

    Untitled

    Abstract: No abstract text available
    Text: 8 1.240 [31,5] SCHEMATIC SP EC IFIC A T IO N S FUNCTION: 1P2T O N -O FF-O N 0.827 [21,0] RATINGS: 20A 125VAC [UL. cUL] 16A 250VAC [UL, cUL] 3 / 4 HP 250VAC [UL, cUL] 16 4 A 250V~T85 [European] 10(2)A 250V~5E4 [European] I O II ELECTRICAL LIFE: 10,000 Cycles


    OCR Scan     		PDF 125VAC 250VAC 100MQ 500VDC 1000VAC UL94V-2 UL94V

    Untitled

    Abstract: No abstract text available
    Text: 8 SCHEMATIC 1,240 [31,5] SPECIFICATIONS FUNCTION: 1P1T O FF-O N 0,827 [21.0] ON RATINGS: 20A 125VAC [UL, cUL] 16A 250VAC [UL, cUL] 3 / 4 HP 250VAC [UL, cUL] 16 4 A 250V~ 1E4 T125 [European] 10(2)A 250V~ 5E4 T125 [European] OFF ELECTRICAL LIFE: 10,000 Cycles


    OCR Scan     		PDF 125VAC 250VAC 100Mi2 500VDC 10OOVAC 972BB 1D2A84 RSC211D2A84