Untitled
Abstract: No abstract text available
Text: L L 46 Small-Signal Diode Schottky Diode Features For general purpose applications. This diode features low turn-on voltage and high break-down voltage. This device is protected by a PN junction guardring against excessive voltage, such as electrostatic discharges.
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DO-35
BAT46.
OD-80C)
100uA
300us,
250mA
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BAT46 sod80
Abstract: BAT46 C 704 diode MINI-MELF DIODE green CATHODE DIODE WITH SOD CASE
Text: L L 46 Small-Signal Diode Schottky Diode Features For general purpose applications. This diode features low turn-on voltage and high break-down voltage. This device is protected by a PN junction guardring against excessive voltage, such as electrostatic discharges.
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DO-35
BAT46.
OD-80)
100uA
300us,
250mA
BAT46 sod80
BAT46
C 704 diode
MINI-MELF DIODE green CATHODE
DIODE WITH SOD CASE
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MINI-MELF DIODE green CATHODE
Abstract: BAT46 BAT46W LL46 general semiconductor DIODE SOD80
Text: LL46 Vishay Semiconductors formerly General Semiconductor Schottky Diode Features MiniMELF SOD-80C Cathode Band .063 (1.6) Dia. .051 (1.3) .146 (3.7) .130 (3.3) .019 (0.48) .011 (0.28) Dimensions in inches and (millimeters) • For general purpose applications
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OD-80C)
DO-35
BAT46
OD-123
BAT46W.
OD-80)
D1/10K
250mA
13-May-02
MINI-MELF DIODE green CATHODE
BAT46W
LL46
general semiconductor DIODE SOD80
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BAT46
Abstract: LL46
Text: LL46 SCHOTTKY BARRIER DIODE MiniMELF SOD-80C FEATURES : Cathode Mark • For general purpose applications. • This diode features very low turn-on voltage and fast switching. This device is protected by a PN junction guard ring against excessive voltage, such
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OD-80C)
DO-35
BAT46
250mA
BAT46
LL46
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Untitled
Abstract: No abstract text available
Text: LL46 SCHOTTKY BARRIER DIODE MiniMELF SOD-80C FEATURES : Cathode Mark • For general purpose applications. • This diode features very low turn-on voltage and fast switching. This device is protected by a PN junction guard ring against excessive voltage, such
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OD-80C)
DO-35
BAT46
250mA
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BAT46
Abstract: BAT46W LL46 MINI-MELF DIODE green CATHODE
Text: LL46 Schottky Diode Features MiniMELF SOD-80C Cathode Band .063 (1.6) Dia. .051 (1.3) • For general purpose applications • This diode features low turn-on voltage and high break-down voltage. This device is protected by a PN junction guardring against excessive voltage,
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OD-80C)
DO-35
BAT46
OD-123
BAT46W.
OD-80)
D1/10K
250mA
BAT46W
LL46
MINI-MELF DIODE green CATHODE
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BAT46
Abstract: BAT46W LL46
Text: LL46 Schottky Diodes FEATURES MiniMELF ♦ For general purpose applications. Cathode Mark .142 3.6 .134 (3.4) ∅ .063 (1.6) .055 (1.4) ♦ These diodes feature low turn-on volt- .019 (0.48) .011 (0.28) age and high break-down voltage. These devices are protected by a PN
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DO-35
BAT46
OD-123
BAT46W.
OD-80)
BAT46W
LL46
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BAT46
Abstract: BAT46W LL46 general semiconductor DIODE SOD80
Text: LL46 VISHAY Vishay Semiconductors Schottky Diode Features • For general purpose applications • This diode features low turn-on voltage and high break-down voltage. This device is protected by a PN junction guardring against excessive voltage, such as electrostatic discharges.
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DO-35
BAT46
OD-123
BAT46W.
OD-80)
LL46-GS18
LL46-GS08
D-74025
18-Nov-03
BAT46W
LL46
general semiconductor DIODE SOD80
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LL46
Abstract: LL46-GS18
Text: LL46 Vishay Semiconductors Small Signal Schottky Diode Features • For general purpose applications • This diode features low turn-on voltage and high break-down voltage. This device is protected by a PN junction guardring against excessive voltage, such as electrostatic discharges.
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DO-35
BAT46
OD-123
BAT46W.
OD-80)
LL46-GS18
LL46-GS08
D-74025
03-Jun-05
LL46
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Untitled
Abstract: No abstract text available
Text: LL46 Vishay Semiconductors Small Signal Schottky Diode Features • For general purpose applications • This diode features low turn-on voltage and high break-down voltage. This device is protected by a PN junction guardring against excessive voltage, such as
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DO-35
BAT46
OD-123
BAT46W-V.
AEC-Q101
2002/95/EC
2002/96/EC
OD-80
GS18/10
GS08/2
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bat41 BAT46
Abstract: C 12 PH Zener diode bat41 bat43 VMN-SG21 BAT41 equivalent Do219AB BAS520-02V BAS581-02V BAT42W-V BAT43W-V
Text: S OD 5 2 3 S OD 3 2 3 S OD 12 3 DO 2 19 A B S M F S OT 2 3 LL P 7 5 M i c r o MEL F Q u a d r o MEL F S OD 8 0 M i n i MEL F S OD 8 0 DO 3 5 w w w. v i s h a y. c o m Selector Guide SMALL Signal Schottky diodes s m a l l s i g n a l DIODE S V I S HAY INTERTE C HNOLO G Y , IN C .
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OD523
OD323
OD123
SD103CWS-V
SD103CW-V
VMN-SG2109-0704
bat41 BAT46
C 12 PH Zener diode
bat41 bat43
VMN-SG21
BAT41 equivalent
Do219AB
BAS520-02V
BAS581-02V
BAT42W-V
BAT43W-V
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BAT46 VISHAY
Abstract: BAT46 BAT46W-V LL46 DIODE WITH SOD CASE BAT46 SOD80
Text: LL46 Vishay Semiconductors Small Signal Schottky Diode Features • For general purpose applications • This diode features low turn-on voltage and high break-down voltage. This device is protected by a PN junction guardring against excessive voltage, such as
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DO-35
BAT46
OD-123
BAT46W-V.
AEC-Q101
2002/95/EC
2002/96/EC
OD-80
GS18/10
GS08/2
BAT46 VISHAY
BAT46W-V
LL46
DIODE WITH SOD CASE
BAT46 SOD80
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Untitled
Abstract: No abstract text available
Text: LL46 Vishay Semiconductors Small Signal Schottky Diode Features • For general purpose applications • This diode features low turn-on voltage and high break-down voltage. This device is protected by a PN junction guardring against excessive voltage, such as electrostatic discharges.
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DO-35
BAT46
OD-123
BAT46W.
OD-80)
LL46-GS18
LL46-GS08
08-Apr-05
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BAT46
Abstract: BAT46W-V DO35 LL46 BAT46 VISHAY
Text: LL46 Vishay Semiconductors Small Signal Schottky Diode Features • For general purpose applications • This diode features low turn-on voltage and high break-down voltage. This device e2 is protected by a PN junction guardring against excessive voltage, such as electrostatic
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BAT46
OD123
BAT46W-V.
2002/95/EC
2002/96/EC
GS18/10
GS08/2
08-Apr-05
BAT46W-V
DO35
LL46
BAT46 VISHAY
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Untitled
Abstract: No abstract text available
Text: LL46 Vishay Semiconductors Small Signal Schottky Diode Features • For general purpose applications • This diode features low turn-on voltage and high break-down voltage. This device e2 is protected by a PN junction guardring against excessive voltage, such as electrostatic
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BAT46
OD123
BAT46W-V.
2002/95/EC
2002/96/EC
GS18/10
GS08/2
08-Apr-05
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LL46
Abstract: No abstract text available
Text: LL46 Vishay Semiconductors Small Signal Schottky Diode Features • For general purpose applications • This diode features low turn-on voltage and high break-down voltage. This device e2 is protected by a PN junction guardring against excessive voltage, such as electrostatic
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BAT46
OD123
BAT46W.
2002/95/EC
2002/96/EC
GS18/10
GS08/2
08-Apr-05
LL46
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LL46
Abstract: ll46-gs08 BAT46 BAT46W-V DO35 BAT46 VISHAY
Text: LL46 Vishay Semiconductors Small Signal Schottky Diode Features • For general purpose applications • This diode features low turn-on voltage and high break-down voltage. This device e2 is protected by a PN junction guardring against excessive voltage, such as electrostatic
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BAT46
OD123
BAT46W-V.
2002/95/EC
2002/96/EC
GS18/10
GS08/2
18-Jul-08
LL46
ll46-gs08
BAT46W-V
DO35
BAT46 VISHAY
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1N914 SOT-23
Abstract: BC337 SOT-23 BAT48 zener 1N4148 SOD323 BC337 sot23 gfp50n
Text: G e n e r a l Semiconductor Diodes and Transistors Visit General SemiconductorÕs Website at www.gensemi.com GENFETª Power MOSFETs Small Signal Switching Diodes Mfr.Õs Type N-Channel MOSFETs Leaded Mfr.Õs Type TO-220 TO-252 TO-263 Ñ Ñ Ñ Ñ Ñ Ñ Ñ Ñ
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DO-35*
OD-80C
OD-323
OD-123
OT-23~
OT-23§
O-220
O-252
O-263
1N914 SOT-23
BC337 SOT-23
BAT48 zener
1N4148 SOD323
BC337 sot23
gfp50n
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Untitled
Abstract: No abstract text available
Text: LL46 www.vishay.com Vishay Semiconductors Small Signal Schottky Diode FEATURES • For general purpose applications • This diode features low turn-on voltage and high break-down voltage. This device is protected by a PN junction guardring against excessive
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DO-35
BAT46
OD-123
BAT46W-V
AEC-Q101
OD-80
GS18/10K
10K/box
GS08/2
2002/95/EC.
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BAT46 SOD80
Abstract: BAT46 VISHAY
Text: LL46 Vishay Semiconductors Small Signal Schottky Diode Features • For general purpose applications • This diode features low turn-on voltage and high break-down voltage. This device is protected by a PN junction guardring against excessive voltage, such as
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DO-35
BAT46
OD-123
BAT46W-V.
AEC-Q101
2002/95/EC
2002/96/EC
OD-80
GS18/10
GS08/2
BAT46 SOD80
BAT46 VISHAY
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VMN-SG2176
Abstract: No abstract text available
Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . Small-Signal Diodes Zener, Schottky, Switching AEC-Q101 qualified Reflow Solderable Wave Solderable ESD MM > 400 V 0 Ω / 200 pF Typical Rating BAS386 MicroMELF 1.9 x Ø1.25 50 0.45 at 1.0 300 125 x x n/a x
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AEC-Q101
BAS386
MCL103
BZD27-M
DO-219AB
BZG05C
DO-214AC
BZG03C
BZT55
VMN-SG2176
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Selector Guide
Abstract: SG2114
Text: V i s h ay I n t e r t e c h n o l o g y, I n c . DIODES Diodes -Focus Products for Multi-Market Applications Small-Signal Schottky and Switching Diodes Available in Surface-Mount and Leaded Packages FEATURED PACKAGES DO - 3 5 MicroMELF M i n i M E L F S OD - 8 0
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M4-9337-2726
VMN-SG2114-1310
Selector Guide
SG2114
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ZENER A26
Abstract: A26 zener VMN-SG2176 BZX384-V-G
Text: V i s h ay Intertec h nolog y, Inc . INNOVAT O L OGY Zener, Schottky, Switching 19 62-2012 AEC-Q101 qualified Reflow Solderable Wave Solderable ESD MM > 400 V 0 Ω / 200 pF Typical Rating BAS386 MicroMELF 1.9 x Ø1.25 50 0.45 at 1.0 300 125 x x n/a x x x x
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AEC-Q101
BAS386
MCL103
BZX84-V
OD-23
BZD27C-M
DO-219AB
BZG05C
BZG03C
DO-214AC
ZENER A26
A26 zener
VMN-SG2176
BZX384-V-G
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1N4148 SOD-80 ST
Abstract: 1N4148 SOD-80 bat41 BAT46 1N914 ph bat41 600 033V BAS40-02 BAV10 VMN-SG2114
Text: V i s h ay In t e r t e c h n o l o g y, In c . Diodes -Focus Products for Multi-Market Applications AND TEC I INNOVAT O L OGY Small-Signal Schottky and Switching Diodes N HN DIODES O 19 62-2012 Available in Surface-Mount and Leaded Packages FEATURED PACKAGES
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OD-523
OD-323
OD-123
DO-35
VMN-SG2114-1202
1N4148 SOD-80 ST
1N4148 SOD-80
bat41 BAT46
1N914 ph
bat41 600
033V
BAS40-02
BAV10
VMN-SG2114
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