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Abstract: No abstract text available
Text: BAT 42 BAT 43 SMALL SIGNAL SCHOTTKY DIODES DESCRIPTION General purpose, metal to silicon diodes featuring very low turn-on voltage fast switching. These devices have integrated protection against excessivevoltage such as electrostaticdischarges. DO 35
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BAT 43 Schottky Diodes
Abstract: No abstract text available
Text: BAT 42 BAT 43 SMALL SIGNAL SCHOTTKY DIODES DESCRIPTION General purpose, metal to silicon diodes featuring very low turn-on voltage fast switching. These devices have integrated protection against excessive voltage such as electrostatic discharges. DO 35
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BAT 43 Schottky Diodes
Abstract: bat 42
Text: BAT 42 BAT 43 SMALL SIGNAL SCHOTTKY DIODES DESCRIPTION General purpose, metal to silicon diodes featuring very low turn-on voltage fast switching. These devices have integrated protection against excessive voltage such as electrostaticdischarges. DO 35 Glass
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68W SOT
Abstract: ultra low noise 12GHz 64W SOT23 AUs SOT363 BAS 40-04 Infineon BAS 68-04 BAT 43 - 46 - 85 - 86 61 SIEMENS DIODE BAT 19 SOT143 DUAL DIODE
Text: Small CHIPS for big visions Schottky Diodes h t t p : / / w w w. i n f i n e o n . c o m Never stop thinking. max. max. typ typ t ion lica V R=0 V CT UF ( typ App ) IF = 10 m A ) IF = 1m A UF ( IF Sin gle Dua l iso lat e Dua d l se ries Dua l co m. Cat Dua
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B132-H7456-GI-X-7600
68W SOT
ultra low noise 12GHz
64W SOT23
AUs SOT363
BAS 40-04 Infineon
BAS 68-04
BAT 43 - 46 - 85 - 86
61 SIEMENS
DIODE BAT 19
SOT143 DUAL DIODE
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Untitled
Abstract: No abstract text available
Text: TMMBAT 42 TMMBAT 43 SMALL SIGNAL SCHOTTKY DIODES DESCRIPTION General purpose, metal to silicon diodes featuring very low turn-on voltage fast switching. These devices have integrated protection against excessive voltage such as electrostatic discharges. MINIMELF
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Schottky
Abstract: No abstract text available
Text: TMMBAT 42 TMMBAT 43 SMALL SIGNAL SCHOTTKY DIODES DESCRIPTION General purpose, metal to silicon diodes featuring very low turn-on voltage fast switching. These devices have integrated protection against excessive voltage such as electrostatic discharges.
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Untitled
Abstract: No abstract text available
Text: TMMBAT 42 TMMBAT 43 SMALL SIGNAL SCHOTTKY DIODES DESCRIPTION General purpose, metal to silicon diodes featuring very low turn-on voltage fast switching. These devices have integrated protection against excessive voltage such as electrostatic discharges. MINIMELF
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Untitled
Abstract: No abstract text available
Text: TMMBAT 42 TMMBAT 43 SMALL SIGNAL SCHOTTKY DIODES DESCRIPTION General purpose, metal to silicon diodes featuring very low turn-on voltage fast switching. These devices have integrated protection against excessivevoltage such as electrostaticdischarges.
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BAT53
Abstract: BAT 43 Schottky Diodes VF 579 D81 marking MARKING D82 BA579C a3020 BA 30 C Thomson-CSF diodes BAR43C
Text: ^ schottky diodes diodes schottky th o m so n -csf Types N N BAT BAT BAR BAR BAR 17 53 18 42 43 N BAR 43 A Characteristics at 25 ° C Maxim um ratings @ Vr Vp C @ •F Vr m 'F |r V (mA) max (uA) (V) min max (V) 4 10 70 30 30 30 30 30 100 100 0,25 0,1 0,2
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1000MHz
120ps
100ps@
BAT53
BAT 43 Schottky Diodes
VF 579
D81 marking
MARKING D82
BA579C
a3020
BA 30 C
Thomson-CSF diodes
BAR43C
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BAT 127
Abstract: No abstract text available
Text: r=Z SGS-THOMSON ^ 7 # . MD gœiLI W iD(gi BAT 42 BAT 43 SMALL SIGNAL SCHOTTKY DIODES DESCRIPTION General purpose, metal to silicon diodes featuring very low turn-on voltage fast switching. These devices have integrated protection against excessive voltage such aselectrostaticdischarges.
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Rectifiers 150/200 mW Schottky/DO-35 M axim um Forward Voltage Drop Peak Reverse Voltage BAT 42 BAT 43 *BAT 46 M ax. Reverse Current PRV If m V FM mA V fm V ' fm V mA V 30 30 100 10 2 10 0.4 0.33 0.45 50 15 250 0.65 0.45 1.0 * 150 mW. max. pow er dissipation @25°C
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Schottky/DO-35
Schottky/D0-201AD
1N5820
1N5821
1N5822
SR305
SR306
SR502
SR503
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Untitled
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Text: £ÿl BAT 42 _BAT 43 SMALL SIGNAL SCHOTTKY DIODES DESCRIPTION General purpose, metal to silicon diodes featuring very low turn-on voltage fast switching. These devices have integrated protection against excessivevoltagesuch as electrostaticdischarges.
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON TM MBAT 42 TM M BAT 43 SMALL SIGNAL SCHOTTKY DIODES D E S C R IP T IO N 3eneral purpose metal to silicon diodes featuring /ery low turn-on voltage fast switching. These devices have integrated protection against sxcessive voltage such as electrostatic discharges.
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42/TMMBAT
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BAS18
Abstract: BAT 43 Schottky Diodes BYV 200 BYV 35 C BAT45 BAR29 BYV 43 45 BAT 49 melf Schottky glass BAT29
Text: SCHOTTKY DIODES SELECTOR GUIDE RF AND ULTRAFAST SWITCHING If, continuous forward current / C0» / 30 mA 15 mA V rrm V DO 35 Glass MINIMELF Glass / SOT 23 Plastic DO 35 Glass 4 BAR 19 / MINIMELF Glass c SOT 23 Plastic @ VR V f @ If max max (V) (V) (mA) (PF)
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0-20A
BAS18
BAT 43 Schottky Diodes
BYV 200
BYV 35 C
BAT45
BAR29
BYV 43 45
BAT 49
melf Schottky glass
BAT29
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Untitled
Abstract: No abstract text available
Text: SIEMENS AKTIENGESELLSCHÂF bflE » • «235kD5 ODSlMSb SSt B S I E i SIEM EN S T '03' o! Dioden Diodes HF-Schottky-Diode in Beam Lead Technologie RF Schottky Diode in Beam Lead Technology Zero Bias Zero Bias Type BAT 32 Characteristics TA = 25° C Frequency
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235kD5
OT-23
OT-143
11I181I8I88B
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SCHOTTKY DIODES CROSS REFERENCE
Abstract: SD 102 M BAT19 BAT29 equivalent 1ss99 BA 5818 SD-101 equivalent BAT29 bat 301 l BAR10
Text: SCHOTTKY DIODES CROSS REFERENCE INDUSTRY PART NUMBER SGS-THOMSON DIRECT REPLACEMENT SGS-THOMSON NEAREST EQUIVALENT INDUSTRY PART NUMBER SGS-THOMSON DIRECT REPLACEMENT SGS-THOMSON NEAREST EQUIVALENT TM M 62/63 1N 5711 1N 5711 LL101 A 1N 5712 1N 5712 LL 103 A.P.C
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BAR11
LL101
BAT47/48
BAT19
BAT29
10/BAT19
10/BAT
SCHOTTKY DIODES CROSS REFERENCE
SD 102 M
BAT29 equivalent
1ss99
BA 5818
SD-101 equivalent
bat 301 l
BAR10
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Untitled
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Text: 7 SGS-THOMSON ^ 7# B A T 42 B A T 43 M I ïftm ig T M M S SMALL SIGNAL SCHOTTKY DIODES D E S C R IP T IO N G en era l p u rp o s e m e tal to silicon diod es fea turin g very low turn-o n vo lta g e and fa s t sw itching. T h e se d e vice s have in te g ra te d protectio n ag ainst
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42/BAT
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TMM BAT 48
Abstract: melf Schottky Byv 10-40 tm BYV 30 45 BAT 49
Text: r=7 SURFACE MOUNT DEVICES ^ 7# SGS-THOMSON IlO ÎÂ ilL iÊ ÎIiM ilÊ i GENERAL PURPOSE & INDUSTRIAL MINIMELF I MELF MINIMELF MELF SCHOTTKY DIODES Type VRRM 'F V •o* (mA) UHF and ultra fast switching TMM TMM TMM TMM BAR 19 BAT 29 BAT 19 BAT 45 |R (1)
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ps/20
0-20A
TMM BAT 48
melf Schottky
Byv 10-40 tm
BYV 30 45
BAT 49
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SMBD2837
Abstract: 550 SOT143 br sot-143 SMBD2836
Text: Diodes For com plete package outlines, refer to pages PO-1 through PO-6 General Purpose, Switching and Rectifier Type BAL74 BAL99 BAR74 BAR99 BAS 16 BAS16W BAS 19 BAS20 BAS21 BAS28 BAS78A BAS78B BAS78C BAS78D BAS79A BAS79B BAS79C BAS79D BASI 16 BAV70 BAV70W
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BAL74
BAL99
BAR74
BAR99
BAS16W
BAS20
BAS21
BAS28
BAS78A
BAS78B
SMBD2837
550 SOT143
br sot-143
SMBD2836
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BAT 127
Abstract: A502GE A503GE byv 20 BYV 35 CB-127
Text: silicon signal diodes O diodes de signal au silicium Type VRRM V |R ! V r max WA) (V) 'F 'O* ImA) schottky diodes BAR BAT BAR BAT THOMSON'CSF vf max (V) / if ImA) C / max (pF) Dynamic parameter« Vr IV) Tamlb = 25°C diodes sch ottky 19 29 35 19 4 5 5 10
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/10mA
/20mA
CB-247
CB-18
BAT 127
A502GE
A503GE
byv 20
BYV 35
CB-127
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IN5819M
Abstract: No abstract text available
Text: IIAIEC SURFACE MOUNT SCHOTTKY DIODES 150/200 mW SCHOTTKY/MINI-MELF DO-35 Type Number Maximum Junction Dissipation OPERATING/STORAGE TEMPERATURE RANGE -5 5 °C to +125°C Capacitance Max. Reverse I Max, Fwd. Voltage Drop VF IM < 8 : V LL42 LL.43 LL.46 200
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DO-35
150/200mW
SCHOTTKY/60A2
200mA
DIODES/TO-236
BAT54
BAT54A
DL101A*
DL101B*
DL101C'
IN5819M
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Untitled
Abstract: No abstract text available
Text: SGS'THOMSON TMMBAT 42 TMMBAT 43 Kffl D [S© E1 [L H © ^ K 5 0 g ® SMALL SIGNAL SCHOTTKY DIODES DESCRIPTION General purpose, metal to silicon diodes featuring very low turn-on voltage fast switching. These devices have integrated protection against
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007b003
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AT120A
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS 0ITÂ S y iI T BAT120 series Schottky barrier double diodes Product specification Supersedes data of 1998 Jan 21 Philips Sem iconductors 1998 Oct 30 PHILIPS Philips Semiconductors Product specification Schottky barrier double diodes
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BAT120
AT120A
135106/00/02/pp8
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IN5711
Abstract: 1N3595DHD 4148 GERMANIUM IN5818 SMALL SIGNAL SCHOTTKY DIODES DO-35 IN270 CB-26 thomson 5ns BYV 200 in3595
Text: S G S-TH O M SO N D | - 712*1237 Ü D a 4 fl?4 THOMSON SEMI CONDUCTORS 0 T~ Y- ° — / ~ o 7 ~ germanium signal diodes Types •o Vr • f @ Vp = IV ■r m ax max min m ax V (mA) {mAJ <k A ) I Case Vr (V) gold bond Tamb = 2 5 °C / V 90 100 IN 270 200 100
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CB-26)
1N3595DHD
CB-102)
/10mA
CB-101)
IN5711
4148 GERMANIUM
IN5818
SMALL SIGNAL SCHOTTKY DIODES DO-35
IN270
CB-26
thomson 5ns
BYV 200
in3595
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