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    BASE STATION POWER AMP Search Results

    BASE STATION POWER AMP Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMPM3HMFYAFG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M3 Core Based Microcontroller/32bit/P-LQFP80-1212-0.50-003 Visit Toshiba Electronic Devices & Storage Corporation
    TMPM3HPFYADFG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M3 Core Based Microcontroller/32bit/P-LQFP128-1420-0.50-001 Visit Toshiba Electronic Devices & Storage Corporation
    TMPM3HLFYAUG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M3 Core Based Microcontroller/32bit/P-LQFP64-1010-0.50-003 Visit Toshiba Electronic Devices & Storage Corporation
    TMPM3HNFZAFG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M3 Core Based Microcontroller/32bit/P-LQFP100-1414-0.50-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMPM3HLFZAUG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M3 Core Based Microcontroller/32bit/P-LQFP64-1010-0.50-003 Visit Toshiba Electronic Devices & Storage Corporation

    BASE STATION POWER AMP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Base Terminal Station

    Abstract: base station product PCU01 EY28 EY29
    Text: RF Module for PCS Base Station PCU01 Part No.: ENW5 3 Type : High performance and high power output RF module of base station that the transmission frequency of existing D-AMPS base station converted into the transmission frequency of PCS base station Features


    Original     		PDF PCU01 Base Terminal Station base station product PCU01 EY28 EY29

    CLASS AB MOSFET RF amplifier

    Abstract: mosfet amplifier class ab rf an3175 mosfet high power rf ldmos rf mosfet power amplifier mosfet class ab rf rf amplifier class a fet mosfet MOSFET amplifier RF CLASS AB DS1847 LDMOS
    Text: Maxim/Dallas > App Notes > WIRELESS, RF, AND CABLE Keywords: DS1847, DS1848, base-station, rf power-amplifier Apr 06, 2004 APPLICATION NOTE 3175 Base-Station RF Power-Amplifier Biasing Power amplifiers used in base stations require biasing for proper RF performance. This article explains the two


    Original     		PDF DS1847, DS1848, DS1847 com/an3175 DS1847: DS1848: AN3175, APP3175, Appnote3175, CLASS AB MOSFET RF amplifier mosfet amplifier class ab rf an3175 mosfet high power rf ldmos rf mosfet power amplifier mosfet class ab rf rf amplifier class a fet mosfet MOSFET amplifier RF CLASS AB LDMOS

    jrc 78L08

    Abstract: RESISTOR POTENTIOMETER GRM32ER71H106KA12L stripline power combiner splitter GRM31MR71H105KA88L grm32er71h106ka transistor J333 AN10923 GRM32ER71H106KA12 jrc78L08
    Text: AN10923 1.5 GHz Doherty power amplifier for base station applications using the BLF6G15L-250PBRN Rev. 1 — 14 March 2011 Application note Document information Info Content Keywords RF power transistor, Doherty architecture, LDMOS, Power amplifier, W-CDMA, LTE, Base station, BLF6G15L-250PBRN


    Original     		PDF AN10923 BLF6G15L-250PBRN BLF6G15L-250PBRN jrc 78L08 RESISTOR POTENTIOMETER GRM32ER71H106KA12L stripline power combiner splitter GRM31MR71H105KA88L grm32er71h106ka transistor J333 AN10923 GRM32ER71H106KA12 jrc78L08

    BGF425W

    Abstract: BFG425W BFG400W BFC425W RT4000 BLV2046 HP 2531 AN98024 BGY1816 BGY1916
    Text: APPLICATION NOTE 50 W base station power amplifier for DCS1800 and PCS1900 AN98024 Philips Semiconductors 50 W base station power amplifier for DCS1800 and PCS1900 CONTENTS 1 ABSTRACT 2 INTRODUCTION 3 PRE-DRIVER BFG425W 4 DRIVER (BGY1816/BGY1916) 5 FINAL STAGE (BLV2046)


    Original     		PDF DCS1800 PCS1900 AN98024 BFG425W) BGY1816/BGY1916) BLV2046) BGF425W BFG425W BFG400W BFC425W RT4000 BLV2046 HP 2531 AN98024 BGY1816 BGY1916

    Cordless Phone circuit diagram

    Abstract: Cordless Phone system block diagram amplifier diagram amplifier transistor application based circuit cordless phone circuit amplifier application circuit power amplifier power amplifier circuit diagram satellite phone system Cordless Phone block diagram
    Text: New GaAs Power Amplifier Module UN00541 for Digital Cordless Base Station • Outlines ●The UN00541 is a transmission amplifier using our original GaAs power FETs with high breakdown and low distortion properties, and suitable for base station in digital cordress phone which enlarges service area.


    Original     		PDF UN00541 UN00541 D00264AE Cordless Phone circuit diagram Cordless Phone system block diagram amplifier diagram amplifier transistor application based circuit cordless phone circuit amplifier application circuit power amplifier power amplifier circuit diagram satellite phone system Cordless Phone block diagram

    antenna CDMA GPRS

    Abstract: IMT 901 YBT250 GSM transmitter receiver SMB FEMALE TO N MALE IMT-2000 IS-136 base station transmitter 824-21
    Text: NetTek Analyzer YBT250 Base Station Transmitter and Interference Analyzer Features & Benefits Handheld, Multi-standard Base Station Transmitter Field Tester Measure Power and Verify the Most Important RF Transmitter Functions of GSM/GPRS, EDGE, W-CDMA/UMTS, cdmaOne,


    Original     		PDF YBT250 cdma2000 cdma2000 2EW-15749-5 antenna CDMA GPRS IMT 901 GSM transmitter receiver SMB FEMALE TO N MALE IMT-2000 IS-136 base station transmitter 824-21

    BLC5G22LS-100

    Abstract: BLC5G22-100 LDMOS LDMOS Technology for RF Power Amplifiers BLC5G22 metallization LDMOS digital BLF4G22-100 ldmos pa driver BLF5G22-180
    Text: 5th Generation LDMOS Philips’ 0.4 µm technology for base station RF PAs sets the standard in W-CDMA amplifier efficiency For RF power amplifiers PAs and base station manufacturers, our 5th generation LDMOS technology is a major advance. This technology offers key advantages for


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: TQP0103 15 W, DC to 4 GHz, GaN Power Transistor Applications • • • • • • W-CDMA / LTE Macrocell Base Station Driver Microcell Base Station Small Cell Active Antenna General Purpose Applications 20 Pin 3x4mm QFN Product Features • • • •


    Original     		PDF TQP0103 TQP0103

    ATC600F100JT250XT

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P20100H Rev. 0, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz and GSM EDGE base station applications with frequencies from


    Original     		PDF MRF8P20100H MRF8P20100HR3 MRF8P20100HSR3 ATC600F100JT250XT

    *J532

    Abstract: C5750X7R1H106KT j692 C5750KF1H226ZT SEMICONDUCTOR J598 ATC600F100JT250XT MRF8P20100H SMT3725ALNF ATC600F1R2 J529
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P20100H Rev. 0, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz and GSM EDGE base station applications with frequencies from


    Original     		PDF MRF8P20100H MRF8P20100HR3 MRF8P20100HSR3 *J532 C5750X7R1H106KT j692 C5750KF1H226ZT SEMICONDUCTOR J598 ATC600F100JT250XT MRF8P20100H SMT3725ALNF ATC600F1R2 J529

    MRF8P20100HR3

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P20100H Rev. 0, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz and GSM EDGE base station applications with frequencies from


    Original     		PDF MRF8P20100H MRF8P20100HR3 MRF8P20100HSR3

    all transistor datasheet

    Abstract: TQP0102-PCB
    Text: TQP0102 5 W, DC to 4 GHz, GaN Power Transistor Applications • • • • Small Cell Base Station Microcell Base Station Driver Active Antenna General Purpose Applications 16 Pin 3x3mm QFN Product Features • • • • • Functional Block Diagram Operating Frequency Range: DC to 4 GHz


    Original     		PDF TQP0102 TQP0102 all transistor datasheet TQP0102-PCB

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S7170N Rev. 1, 10/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF8S7170NR3 Designed for base station applications with frequencies from 728 to 768 MHz. Can be used in Class AB and Class C for all typical cellular base station


    Original     		PDF MRF8S7170N MRF8S7170NR3

    MOSFET J132

    Abstract: J132 MOSFET J127 mosfet J1955 ATC100B101 MRF8S7170N 748 transistor on AN1955 JESD22-A113 JESD22-A114
    Text: Document Number: MRF8S7170N Rev. 0, 2/2010 Freescale Semiconductor Technical Data RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF8S7170NR3 Designed for base station applications with frequencies from 728 to 768 MHz. Can be used in Class AB and Class C for all typical cellular base station


    Original     		PDF MRF8S7170N MRF8S7170NR3 MOSFET J132 J132 MOSFET J127 mosfet J1955 ATC100B101 MRF8S7170N 748 transistor on AN1955 JESD22-A113 JESD22-A114

    variable phase shifter

    Abstract: HI1608 phase shifter phase shifter circulator HI1608-1B2N2 spice Circulator varactor diode phase shifter HYB-1 varactor diode SPICE model Design with PIN diode alpha
    Text: Application Note A Varactor Controlled Phase Shifter for PCS Base Station Applications APN1009 Introduction Power amplifiers in today’s base stations use compensation techniques to reduce distortion. There are many well-known compensation techniques available, all


    Original     		PDF APN1009 APN1004, 3/00A variable phase shifter HI1608 phase shifter phase shifter circulator HI1608-1B2N2 spice Circulator varactor diode phase shifter HYB-1 varactor diode SPICE model Design with PIN diode alpha

    200319B

    Abstract: varactor diode SPICE model variable phase shifter symbol of varactor diode and equivalent circuit PAD1 Spice phase shifter circulator varactor diode phase shifter 180 Degree hybrid varactor diode varactor diode high frequency
    Text: APPLICATION NOTE A Varactor Controlled Phase Shifter for PCS Base Station Applications Introduction Power amplifiers in today’s base stations use compensation techniques to reduce distortion. There are many well-known compensation techniques available, all relying on similar


    Original     		PDF 200319B 200319B varactor diode SPICE model variable phase shifter symbol of varactor diode and equivalent circuit PAD1 Spice phase shifter circulator varactor diode phase shifter 180 Degree hybrid varactor diode varactor diode high frequency

    cell phone detector conclusion

    Abstract: cell phone detector abstract
    Text: Application Report SNWA003A – January 2006 – Revised April 2013 AN-1433 Base Station Closed-Loop RF Power Control with LMV232 Crest-Factor Invariant Detector .


    Original     		PDF SNWA003A AN-1433 LMV232 cell phone detector conclusion cell phone detector abstract

    DML Microwave

    Abstract: 1702 rf amplifier 100w rf power amplifier 100w
    Text: 27223 DML Microwave 4/7/01 1:46 pm Page 1 PCS P.A. SOLID STATE 40 W POWER AMPLIFIER FOR GSM 1800 BASE STATIONS GENERAL INFORMATION ADVANTAGES MCE DML Microwave has designed this 40W Power Amplifier for use in GSM 1800 PCS 1900 version available Base Station applications


    Original     		PDF

    NEL2000

    Abstract: NEL2001 NEL200101-24 NEL2004 NEL2004F02-24 NEL2012 NEL2012F02-24 NEL2035 NEL2035F03-24 Class AB AMPLIFIER 4W
    Text: DATA SHEET SILICON POWER TRANSISTOR NEL2000 SERIES NPN SILICON EPITAXIAL TRANSISTOR L Band Power Amplifier DESCRIPTION AND APPLICATIONS NEL2000 series of NPN epitaxial microwave power transistors is designed for 1.8-2 GHz PHS/PCN/PCS base station applications.


    Original     		PDF NEL2000 P10381EJ3V1DS00 NEL2001 NEL200101-24 NEL2004 NEL2004F02-24 NEL2012 NEL2012F02-24 NEL2035 NEL2035F03-24 Class AB AMPLIFIER 4W

    Avantek rf amplifier

    Abstract: AWP-900 AVANTEK power amplifier Avantek amplifier AVANTEK AVANTEK awp AVANTEK KS22090 avantek Low Noise Amplifier am KS-22090L1 Avantek UA-152
    Text: Cellular Radio: High Power/Low Noise Cellsite Amplifiers AWP-905 Series: Base Station Power Amplifiers AWP-900: Base Station Power Amplifier AWP-900 Features Features • 860-900 MHz • 860-900 MHz • Output power of 45 watts ±1 dB • TTL controlled on/off and power adjust


    OCR Scan     		PDF AWP-900: AWP-905 AWP-900 1-800-AVANTEK Avantek rf amplifier AVANTEK power amplifier Avantek amplifier AVANTEK AVANTEK awp AVANTEK KS22090 avantek Low Noise Amplifier am KS-22090L1 Avantek UA-152

    Untitled

    Abstract: No abstract text available
    Text: R FM [ i RF2123 MICRODEVICES HIGH POWER AMPLIFIER Typical A pplications • 915M H z ISM Band Applications • Commercial and Consumer Systems • Driver stage for GSM Base Stations • Portable Battery Powered Equipment POWER AMPLIFIERS • Base Station Equipment


    OCR Scan     		PDF RF2123 RF2123 915MHz 800MHz 950MHz

    PICO base station

    Abstract: transistor 386 PIN DIAGRAM signal path designer RF2123
    Text: BFB MICRO-DEVICES "•* « - > 1RF2123 HIGH POWER AMPLIFIER Typical Applications • 915 MHz ISM Band Applications Commercial and Consumer Systems • Driver stage for GSM Base Stations Portable Battery Powered Equipment • Base Station Equipment Product Description


    OCR Scan     		PDF 1RF2123 RF2123 915MHz 800MHz 950MHz PICO base station transistor 386 PIN DIAGRAM signal path designer

    Untitled

    Abstract: No abstract text available
    Text: RF2103P MICRO DEVICES MEDIUM POWER LINEAR AMPLIFIER • Digital Communication Systems Portable Battery Powered Equipment • Spread Spectrum Communication Systems Commercial and Consumer Systems • Driver for Higher Power Linear Applications Base Station Equipment


    OCR Scan     		PDF RF2103P RF2103P 27dBm 24dBm --------21dBm 18clBm 15dBm

    EFT 373

    Abstract: 25CC RF2103P 915 transistor
    Text: RF2103P MICRO-DEVICES M EDIUM POWER LINEAR AMPLIFIER • Digital Communication Systems Portable Battery Powered Equipment • Spread Spectrum Communication Systems Commercial and Consumer Systems • Driver for Higher Power Linear Applications Base Station Equipment


    OCR Scan     		PDF RF2103P RF2103P 450MHz 1000MHz. ---27dBm -24dBm ----15dBm EFT 373 25CC 915 transistor