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    BASE RESISTANCE FOR SOT23 Search Results

    BASE RESISTANCE FOR SOT23 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    TMPM3HMFYAFG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M3 Core Based Microcontroller/32bit/P-LQFP80-1212-0.50-003 Visit Toshiba Electronic Devices & Storage Corporation
    TMPM3HPFYADFG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M3 Core Based Microcontroller/32bit/P-LQFP128-1420-0.50-001 Visit Toshiba Electronic Devices & Storage Corporation
    TMPM3HLFYAUG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M3 Core Based Microcontroller/32bit/P-LQFP64-1010-0.50-003 Visit Toshiba Electronic Devices & Storage Corporation
    TMPM3HNFZAFG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M3 Core Based Microcontroller/32bit/P-LQFP100-1414-0.50-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMPM3HLFZAUG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M3 Core Based Microcontroller/32bit/P-LQFP64-1010-0.50-003 Visit Toshiba Electronic Devices & Storage Corporation

    BASE RESISTANCE FOR SOT23 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    KTC2875

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTC2875 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR FOR MUTING AND SWITCHING APPLICATION. FEATURES ・High Emitter-Base Voltage : VEBO=25V Min. E B L L ・High Reverse hFE ・Low on Resistance : RON=1Ω(Typ.), (IB=5mA) H 1 P Collector-Base Voltage


    Original     		PDF KTC2875 KTC2875

    spice germanium diode

    Abstract: SNW-EQ-611 PXTA14 sot89 JB TRANSISTOR SMD letter CODE PACKAGE SOT23 BSP15 BSP19 BST60 germanium transistor pnp MDA100
    Text: GENERAL Page Quality 2 Pro Electron type numbering system 2 Rating systems 3 Letter symbols 4 S-parameter definitions 7 Equivalent package designators 8 Transistor ratings 8 Thermal considerations 11 Power derating curves for SMDs Power derating curve for SOT23


    Original     		PDF OT143 SC-59 SC-70 SC-88 SC-75 OT223 BD839. O-202 spice germanium diode SNW-EQ-611 PXTA14 sot89 JB TRANSISTOR SMD letter CODE PACKAGE SOT23 BSP15 BSP19 BST60 germanium transistor pnp MDA100

    4 phase stepper motor

    Abstract: 12v transformer fx3311 FMMT618 ir remote control transmitter BCP54, BCX54 FMMT619 zetex product BCX54 LL5818
    Text: Application Note 11 Issue 2 October 1995 Features and Applications of the FMMT618 and 619 High Current SOT23 replaces SOT89, SOT223 and D-PAK David Bradbury Switch 6A loads using a SOT23 transistor? Zetex has developed this new range to meet ever increasing demands for


    Original     		PDF FMMT618 OT223 FMMT619 OT223 10-20mV 4 phase stepper motor 12v transformer fx3311 ir remote control transmitter BCP54, BCX54 zetex product BCX54 LL5818

    Untitled

    Abstract: No abstract text available
    Text: IS / IECQC 700000 IS / IECQC 750100 IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON EPITAXIAL TRANSISTOR CMBT2484 SOT23 PIN CONFIGURATION NPN 1 = BASE 2 = EMITTER 3 = COLLECTOR


    Original     		PDF CMBT2484 C-120

    transistor smd marking BA RE

    Abstract: fr51 FR MARKING SMD TRANSISTOR transistor smd marking BA CMBT2484 ba sot23
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON EPITAXIAL TRANSISTOR CMBT2484 SOT23 PIN CONFIGURATION NPN 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 MARKING: 1U 1 2 LOW NOISE TRANSISTOR ABSOLUTE MAXIMUM RATINGS (Ta=25 deg C)


    Original     		PDF ISO/TS16949 CMBT2484 C-120 transistor smd marking BA RE fr51 FR MARKING SMD TRANSISTOR transistor smd marking BA CMBT2484 ba sot23

    transistor smd marking BA RE

    Abstract: transistor smd marking PE FR MARKING SMD TRANSISTOR CMBT2484 transistor smd marking BA sot-23
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON EPITAXIAL TRANSISTOR CMBT2484 SOT23 PIN CONFIGURATION NPN 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 MARKING: 1U 1 2 LOW NOISE TRANSISTOR ABSOLUTE MAXIMUM RATINGS (Ta=25 deg C)


    Original     		PDF CMBT2484 C-120 transistor smd marking BA RE transistor smd marking PE FR MARKING SMD TRANSISTOR CMBT2484 transistor smd marking BA sot-23

    Untitled

    Abstract: No abstract text available
    Text: STESB01 ESBT Base Driver Features • Controls ESBT Base Current in Every Line/ Load Condition ■ Supply Voltage Range: 8V to 20 V ■ Storage Time Controlled by Closed Loop Architecture from 150ns to 1.5µs ■ SOT23-6L Under Voltage Lockout With Hysteresis


    Original     		PDF STESB01 150ns OT23-6L STESB01

    ts 4141 TRANSISTOR smd

    Abstract: CMBT2484
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON EPITAXIAL TRANSISTOR CMBT2484 SOT23 PIN CONFIGURATION NPN 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 MARKING: 1U 1 2 LOW NOISE TRANSISTOR ABSOLUTE MAXIMUM RATINGS (Ta=25 deg C)


    Original     		PDF CMBT2484 C-120 ts 4141 TRANSISTOR smd CMBT2484

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON EPITAXIAL TRANSISTOR CMBT2484 SOT23 PIN CONFIGURATION N PN 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 MARKING: 1U 1 2 LOW NOISE TRANSISTOR ABSOLUTE MAXIMUM RATINGS (Ta=25 deg C)


    Original     		PDF CMBT2484 C-120

    Marking C4 SOT23-5

    Abstract: D06A marking code ce SOT23 MARKING CODE R7 DIODE LM3460 MA05B SHUNT REGULATOR marking "7A" MARKING CODE R7 RF TRANSISTOR
    Text: LM3460-1.2, -1.5 Precision Controller for GTLp and GTL Bus Termination General Description Features The LM3460 is a monolithic integrated circuit designed for precision control of GTLplus and GTL Bus termination. This controller is available in a tiny SOT23-5 package, and includes an internally compensated op amp, a bandgap reference, an NPN output transistor, and voltage setting resistors.


    Original     		PDF LM3460-1 LM3460 OT23-5 Marking C4 SOT23-5 D06A marking code ce SOT23 MARKING CODE R7 DIODE MA05B SHUNT REGULATOR marking "7A" MARKING CODE R7 RF TRANSISTOR

    D06A

    Abstract: LM3460 MF05A
    Text: LM3460-1.2, -1.5 Precision Controller for GTLp and GTL Bus Termination General Description Features The LM3460 is a monolithic integrated circuit designed for precision control of GTLplus and GTL Bus termination. This controller is available in a tiny SOT23-5 package, and includes an internally compensated op amp, a bandgap reference, an NPN output transistor, and voltage setting resistors.


    Original     		PDF LM3460-1 LM3460 OT23-5 D06A MF05A

    D06A

    Abstract: LM3460 MF05A
    Text: LM3460-1.2, -1.5 Precision Controller for GTLp and GTL Bus Termination General Description Features The LM3460 is a monolithic integrated circuit designed for precision control of GTLplus and GTL Bus termination. This controller is available in a tiny SOT23-5 package, and includes an internally compensated op amp, a bandgap reference, an NPN output transistor, and voltage setting resistors.


    Original     		PDF LM3460-1 LM3460 OT23-5 D06A MF05A

    D44H8

    Abstract: 2N3906 AN-450 D06A LM3460 MF05A
    Text: LM3460-1.2, -1.5 Precision Controller for GTLp and GTL Bus Termination General Description Features The LM3460 is a monolithic integrated circuit designed for precision control of GTLplus and GTL Bus termination. This controller is available in a tiny SOT23-5 package, and includes an internally compensated op amp, a bandgap reference, an NPN output transistor, and voltage setting resistors.


    Original     		PDF LM3460-1 LM3460 OT23-5 CSP-9-111S2. D44H8 2N3906 AN-450 D06A MF05A

    FMMT493A

    Abstract: FMMT493ATA FMMT493ATC
    Text: FMMT493A SOT23 60V NPN SILICON PLANAR MEDIUM POWER PLANAR TRANSISTOR NPN: VCEO = 60V, IC = 1A, VCE SAT = 0.5V @1A E C Description: This 60V NPN transistor provides users with performance combining low saturation and high hFE with a continuous current capability of 1A, ensuring


    Original     		PDF FMMT493A 250mA FMMT493ATA FMMT493ATC FMMT493A FMMT493ATA FMMT493ATC

    Marking C4 SOT23-5

    Abstract: D09A
    Text: LM3460-1.2, -1.5 Precision Controller for GTLp and GTL Bus Termination General Description Features The LM3460 is a monolithic integrated circuit designed for precision control of GTLplus and GTL Bus termination. This controller is available in a tiny SOT23-5 package, and includes an internally compensated op amp, a bandgap reference, an NPN output transistor, and voltage setting resistors.


    Original     		PDF LM3460-1 LM3460 OT23-5 5-Aug-2002] Marking C4 SOT23-5 D09A

    Untitled

    Abstract: No abstract text available
    Text: FMMT493A SOT23 60V NPN SILICON PLANAR MEDIUM POWER PLANAR TRANSISTOR NPN: VCEO = 60V, IC = 1A, VCE SAT = 0.5V @1A E C Description: This 60V NPN transistor provides users with performance combining low saturation and high hFE with a continuous current capability of 1A, ensuring


    Original     		PDF FMMT493A 250mA FMMT493ATA FMMT493ATC

    FMMT493ATA

    Abstract: No abstract text available
    Text: FMMT493A SOT23 60V NPN SILICON PLANAR MEDIUM POWER PLANAR TRANSISTOR NPN: VCEO = 60V, IC = 1A, VCE SAT = 0.5V @1A E C Description: This 60V NPN transistor provides users with performance combining low saturation and high hFE with a continuous current capability of 1A, ensuring


    Original     		PDF FMMT493A 250mA FMMT493ATA FMMT493ATC FMMT452) 522-FMMT493ATA FMMT493ATA

    FMMT493A

    Abstract: FMMT493ATA FMMT493ATC
    Text: FMMT493A SOT23 60V NPN SILICON PLANAR MEDIUM POWER PLANAR TRANSISTOR NPN: VCEO = 60V, IC = 1A, VCE SAT = 0.5V @1A E C Description: This 60V NPN transistor provides users with performance combining low saturation and high hFE with a continuous current capability of 1A, ensuring


    Original     		PDF FMMT493A 250mA FMMT493ATA FMMT493ATC FMMT493A FMMT493ATA FMMT493ATC

    2N3700CSM

    Abstract: 2N3700 test 2N3700
    Text: 2N3700CSM HIGH VOLTAGE, MEDIUM POWER, NPN TRANSISTOR FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR 0.31 rad. (0.012) • HERMETIC CERAMIC SURFACE MOUNT PACKAGE (SOT23 COMPATIBLE)


    Original     		PDF 2N3700CSM 2N3700 2N3700CSM test 2N3700

    KTC2875

    Abstract: P300 EH SOT23
    Text: SEMICONDUCTOR TECHNICAL DATA KTC2875 SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE FOR MUTING AND SWITCHING APPLICATION. FEATURES • High Emitter-Base Voltage : VEB0=25V Min. • High Reverse Iife : Reverse hFE=150(Typ.) (Vce=~2V, Ic=-2mA) • Low on Resistance : Ron=1£2 (Typ.), (lB=5mA)


    OCR Scan     		PDF KTC2875 KTC2875 P300 EH SOT23

    sot23-5 marking ha

    Abstract: BT2222 equivalent for transistor tt 2222 transistor tt 2222 D06A LM3460 MA05A 2N3906 Darlington transistor MARKING CODE R7 RF TRANSISTOR
    Text: May 1996 Semiconductor ß LM3460-1.2, -1.5 Precision Controller for GTLp and GTL Bus Termination General Description Features The LM3460 is a monolithic integrated circuit designed for precision control of GTLplus and GTL Bus termination. This controller is available In a tiny SOT23-5 package, and in­


    OCR Scan     		PDF LM3460-1 LM3460 OT23-5 sot23-5 marking ha BT2222 equivalent for transistor tt 2222 transistor tt 2222 D06A MA05A 2N3906 Darlington transistor MARKING CODE R7 RF TRANSISTOR

    PH11 SOT23

    Abstract: BFS17 TRANSISTOR C 1177
    Text: • ^53^31 00252Sb 2 83 H A P X Philips Sem iconductors Product specification N AMER PHILIPS/DISCRETE b?E NPN 1 GHz wideband transistor DESCRIPTION c BFS17 PINNING NPN transistor In a plastic SOT23 envelope. It is intended for a wide range of RF applications, such as mixers and


    OCR Scan     		PDF 00252Sb BFS17 MEA393 MEA397 PH11 SOT23 BFS17 TRANSISTOR C 1177

    Untitled

    Abstract: No abstract text available
    Text: • 1^53=131 QDESSSti 283 H A P X Philips Semiconductors Product specification ANER PHILIPS /DISC RE TE b?E NPN 1 GHz wideband transistor DESCRIPTION BFS17 e PINNING NPN transistor In a plastic SOT23 envelope. It is intended for a wide range of RF applications, such as mixers and


    OCR Scan     		PDF BFS17 MEA393 MEA397

    BFR106

    Abstract: MSB003 MBB773
    Text: Philips Semiconductors Product specification NPN 5 GHz wideband transistor DESCRIPTION BFR106 PINNING NPN silicon planar epitaxial transistor in a plastic SOT23 envelope. It is primarily intended for low noise, general RF applications. PIN DESCRIPTION 3 Code: R7p


    OCR Scan     		PDF BFR106 MSB003 BFR106 MSB003 MBB773