Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    BASE OF S9014 TRANSISTOR Search Results

    BASE OF S9014 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TMPM3HMFYAFG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M3 Core Based Microcontroller/32bit/P-LQFP80-1212-0.50-003 Visit Toshiba Electronic Devices & Storage Corporation
    TMPM3HPFYADFG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M3 Core Based Microcontroller/32bit/P-LQFP128-1420-0.50-001 Visit Toshiba Electronic Devices & Storage Corporation
    TMPM3HLFYAUG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M3 Core Based Microcontroller/32bit/P-LQFP64-1010-0.50-003 Visit Toshiba Electronic Devices & Storage Corporation

    BASE OF S9014 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    s9014 equivalent

    Abstract: transistor S9014 S9014 s9014 Transistor s9014 transistor datasheet transistor npn s9014
    Text: Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 S9014 Features • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.4Watts Tamb=25 OC of Power Dissipation. Collector-current 0.1A Collector-base Voltage 50V


    Original     		PDF S9014 -55OC 100mAdc, 10mAdc, 30MHz) s9014 equivalent transistor S9014 S9014 s9014 Transistor s9014 transistor datasheet transistor npn s9014

    s9014 equivalent

    Abstract: S9014 S9014 TO92 S9014 datasheet S9014 TRANSISTORS S-9014
    Text: S9014 NPN General Purpose Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR 1 2 3 ABSOLUTE MAXIMUM RATINGS Ta=25 C Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Symbol VCEO VCBO VEBO IC Value 45 50 5.0 100


    Original     		PDF S9014 100uAdc, 30MHz) 270TYP s9014 equivalent S9014 S9014 TO92 S9014 datasheet S9014 TRANSISTORS S-9014

    s9014

    Abstract: No abstract text available
    Text: S9014 NPN General Purpose Transistors TO-92 * “G” Lead Pb -Free 1. EMITTER 2. BASE 3. COLLECTOR 1 2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Symbol VCEO VCBO VEBO


    Original     		PDF S9014 100uAdc, 30MHz) 270TYP s9014

    S9014

    Abstract: transistor SOT23 J6
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9014 SOT-23 TRANSISTOR NPN 1. BASE FEATURES z Complementary to S9015 2. EMITTER 3. COLLECTOR MARKING: J6 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter


    Original     		PDF OT-23 S9014 OT-23 S9015 30MHz S9014 transistor SOT23 J6

    s9014

    Abstract: S9014 TO92 s9015
    Text: S9014 NPN TO-92 Bipolar Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features High total power dissipation.(PC=0.45W) High hFE and good linearity Complementary to S9015 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO


    Original     		PDF S9014 S9015 100mA, 30MHz S9014 TO92 s9015

    transistor S9014

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9014 SOT-23 TRANSISTOR NPN 1. BASE FEATURES z Complementary to S9015 2. EMITTER 3. COLLECTOR MARKING: J6 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter


    Original     		PDF OT-23 S9014 OT-23 S9015 30MHz transistor S9014

    transistor SOT23 J6

    Abstract: transistor S9014 S9014 SOT-23 j6 sot23 J6 transistor j6 transistor sot-23 SOT-23 j6 transistor npn s9014 S9014 J6 J6 SOT 23
    Text: S9014 SOT-23 Transistor NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — Complementary to S9015 MARKING: J6 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage


    Original     		PDF S9014 OT-23 OT-23 S9015 30MHz transistor SOT23 J6 transistor S9014 S9014 SOT-23 j6 sot23 J6 transistor j6 transistor sot-23 SOT-23 j6 transistor npn s9014 S9014 J6 J6 SOT 23

    transistor SOT23 J6

    Abstract: S9014 SOT-23 transistor S9014 S9014 S9014 sot-23 J6 s9014 equivalent marking J6 s9015 SOT23 transistor j6 sot23 S9014 J6
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9014 SOT-23 TRANSISTOR NPN 1. BASE FEATURES z Complementary to S9015 2. EMITTER 3. COLLECTOR MARKING: J6 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter


    Original     		PDF OT-23 S9014 OT-23 S9015 30MHz transistor SOT23 J6 S9014 SOT-23 transistor S9014 S9014 S9014 sot-23 J6 s9014 equivalent marking J6 s9015 SOT23 transistor j6 sot23 S9014 J6

    transistor S9014

    Abstract: s9014 equivalent s9014 transistor S9014
    Text: S9014 TO-92 Plastic-Encapsulate Transistors Transistor NPN FEATURES TO-92 Power dissipation o P CM :0.4 W (Tamb=25 C) Collector current I CM :0.1 A Collector-base voltage V (BR)CBO :50 V Operating and storage junction temperature range o o T J ,T stg :-55 C to +150 C


    Original     		PDF S9014 160uA 140uA 120uA 100uA transistor S9014 s9014 equivalent s9014 transistor S9014

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors S9014 TO-92 TRANSISTOR NPN 1. EMITTER FEATURES z High total power dissipation.(PC=0.45W) z High hFE and good linearity z Complementary to S9015 2. BASE 3. COLLECTOR


    Original     		PDF S9014 S9015 100mA, 30MHz

    transistor S9014

    Abstract: s9014 s9014 equivalent transistor -s9014 s9014 transistor transistor TO-92 S9015 S9014 TO92 S9015
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors S9014 TO-92 TRANSISTOR NPN 1. EMITTER FEATURES z High total power dissipation.(PC=0.45W) z High hFE and good linearity z Complementary to S9015 2. BASE 3. COLLECTOR


    Original     		PDF S9014 S9015 100mA, 30MHz transistor S9014 s9014 s9014 equivalent transistor -s9014 s9014 transistor transistor TO-92 S9015 S9014 TO92 S9015

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors S9014 TO-92 TRANSISTOR NPN 1. EMITTER FEATURES z High Total Power Dissipation.(PC=0.45W) z High hFE and Good Linearity z Complementary to S9015 2. BASE 3. COLLECTOR


    Original     		PDF S9014 S9015

    BR 9014

    Abstract: BR 9014 c BR 9014 transistor transistors BR 9014 TRANSISTOR 9014 S9014 V. 9014 c 9014
    Text: TO-92 Plastic-Encapsulate Transistors S9014 TRANSISTOR NPN TO-92 FEATURES 1. EMITTER Power dissipation PCM: 2. BASE 0.4 W (Tamb=25℃) 3. COLLECTOR Collector current 0.1 A ICM: Collector-base voltage 50 V V(BR)CBO: Operating and storage junction temperature range


    Original     		PDF S9014 BR 9014 BR 9014 c BR 9014 transistor transistors BR 9014 TRANSISTOR 9014 S9014 V. 9014 c 9014

    s9015 transistor

    Abstract: s9015 to92 s9014 equivalent transistor TO-92 S9015 S9014 S9015 s9015 equivalent transistor S9015
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors TO-92 S9015 TRANSISTOR PNP 1.EMITTER FEATURES z High total power dissipation.(PC=0.45W) z High hFE and good linearity z Complementary to S9014 2. BASE 3. COLLECTOR 1 2 3


    Original     		PDF S9015 S9014 -100A, -100mA, -10mA 30MHz s9015 transistor s9015 to92 s9014 equivalent transistor TO-92 S9015 S9014 S9015 s9015 equivalent transistor S9015

    S9015 SOT-23

    Abstract: m6 marking transistor sot-23 marking M6 S9015 s9015 transistor s9015 SOT23 transistor transistor S9014 s9014 equivalent S9015 M6 transistor SOT23 S9015
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9015 SOT-23 TRANSISTOR PNP FEATURES Complementary to S9014 1. BASE z 2. EMITTER 3. COLLECTOR MARKING: M6 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter


    Original     		PDF OT-23 S9015 OT-23 S9014 -100A, -100mA, -10mA S9015 SOT-23 m6 marking transistor sot-23 marking M6 S9015 s9015 transistor s9015 SOT23 transistor transistor S9014 s9014 equivalent S9015 M6 transistor SOT23 S9015

    S9015

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9015 SOT-23 TRANSISTOR PNP FEATURES Complementary to S9014 1. BASE z 2. EMITTER 3. COLLECTOR MARKING: M6 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter


    Original     		PDF OT-23 S9015 OT-23 S9014 -100mA, -10mA 30MHz S9015

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9014 SOT-23 TRANSISTOR NPN 1. BASE FEATURES z Complementary to S9015 2. EMITTER 3. COLLECTOR MARKING: J6 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter


    Original     		PDF OT-23 S9014 OT-23 S9015 30MHz

    s9015

    Abstract: No abstract text available
    Text: S9015 PNP TO-92 Bipolar Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features High total power dissipation.(PC=0.45W) High hFE and good linearity Complementary to S9014 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO


    Original     		PDF S9015 S9014 -100A, -100mA, -10mA -10mA 30MHz

    m6 marking transistor sot-23

    Abstract: sot-23 Marking M6 S9015 SOT-23 s9015 SOT23 transistor s9015 transistor s9015 S9015 M6 marking M6 S9014 SOT-23 transistor SOT23 m6
    Text: S9015 SOT-23 Transistor PNP SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — Complementary to S9014 MARKING: M6 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage


    Original     		PDF S9015 OT-23 OT-23 S9014 -100A, -100mA, -10mA m6 marking transistor sot-23 sot-23 Marking M6 S9015 SOT-23 s9015 SOT23 transistor s9015 transistor s9015 S9015 M6 marking M6 S9014 SOT-23 transistor SOT23 m6

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors TO-92 S9015 TRANSISTOR PNP 1.EMITTER FEATURES z High Total Power Dissipation.(PC=0.45W) z High hFE and Good Linearity z Complementary to S9014 2. BASE 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		PDF S9015 S9014 -100mA, -10mA 30MHz

    s9014 transistor

    Abstract: transistor TO-92 S9014 s9014 equivalent datasheet of ic 555 S9014 s9014 datasheet S9014transistor
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors S9014 TRANSISTOR（ NPN ） TO—92 FEATURES Power dissipation PCM : 0.4 W（Tamb=25℃） Collector current ICM : 0.1 A Collector-base voltage V BR CBO : 50 V Operating and storage junction temperature range


    Original     		PDF S9014 O--92 30MHz 270TYP 050TYP s9014 transistor transistor TO-92 S9014 s9014 equivalent datasheet of ic 555 S9014 s9014 datasheet S9014transistor

    triac zd 607

    Abstract: hep c6004 2sb504 2SC 968 NPN Transistor sje 607 motorola c6004 diode BY127 specifications K872 af118 Motorola Semiconductor hep c3806p
    Text: & SEM ICO N DU CTO R This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Professional service techni­ cian. The information contained herein is based on an analysis of the published


    OCR Scan     		PDF thT404 ZV15A ZY33A ZT696 ZV15B ZY33B ZT697 ZT706 ZV27A ZY62A triac zd 607 hep c6004 2sb504 2SC 968 NPN Transistor sje 607 motorola c6004 diode BY127 specifications K872 af118 Motorola Semiconductor hep c3806p