Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    BALUN PUSH PULL Search Results

    BALUN PUSH PULL Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCTH011AE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=1μA / IDD=1.8μA / Push-pull type Visit Toshiba Electronic Devices & Storage Corporation
    TCTH022AE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=10μA / IDD=11.3μA / Push-pull type / FLAG signal latch function Visit Toshiba Electronic Devices & Storage Corporation
    TCTH021AE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=10μA / IDD=11.3μA / Push-pull type Visit Toshiba Electronic Devices & Storage Corporation
    TCTH012AE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=1μA / IDD=1.8μA / Push-pull type / FLAG signal latch function Visit Toshiba Electronic Devices & Storage Corporation
    BLF Rochester Electronics BLF278 - VHF Push-Pull Power VDMOS Transistor Visit Rochester Electronics Buy

    BALUN PUSH PULL Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TPV 3100

    Abstract: TPM-4100 application note transistor TPV 3100 trw rf disadvantages of Magic tee trw rf semiconductors TPV-3100 TPV3100 108AN zf transmission
    Text: Order this document by AN1034/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN1034 THREE BALUN DESIGNS FOR PUSH-PULL AMPLIFIERS Single RF power transistors seldom satisfy today’s design criteria; several devices in separate packages1, or in the same package balanced, push-pull or dual transistors , must


    Original     		PDF AN1034/D AN1034 TPV 3100 TPM-4100 application note transistor TPV 3100 trw rf disadvantages of Magic tee trw rf semiconductors TPV-3100 TPV3100 108AN zf transmission

    Untitled

    Abstract: No abstract text available
    Text: 3A512 SMT Low Impedance Balun VER11/8/00 Description: The 3A512 is a low profile balanced to unbalanced transformer designed for push-pull amplifiers in an easy to use surface mount package covering PDC applications. The 3A512 is ideal for high volume manufacturing and is


    Original     		PDF 3A512 VER11/8/00 -55oC 125oC 3A512

    470 860 mhz AN

    Abstract: No abstract text available
    Text: 3A325 SMT Balun VER10/05/99 Features: Description: • • • • • • • The 3A325 is a low profile balanced to unbalanced transformer designed for push-pull amplifiers in an easy to use surface mount package covering TV broadcast applications. The 3A325 has an unbalanced


    Original     		PDF 3A325 VER10/05/99 3A325 470 860 mhz AN

    balun transformer 200 ohm

    Abstract: No abstract text available
    Text: 3W512 SMT Low Impedance Balun VER11/8/00 Description: The 3W512 is a low profile balanced to unbalanced transformer designed for push-pull amplifiers in an easy to use surface mount package covering DCS, PCS, W-CDMA and other 3G applications. The 3W512 is ideal for high


    Original     		PDF 3W512 VER11/8/00 -55oC 125oC 3W512 balun transformer 200 ohm

    impedance transformer 50 ohm

    Abstract: No abstract text available
    Text: 3A412 SMT Low Impedance Balun VER11/3/00 Description: The 3A412 is a low profile balanced to unbalanced transformer designed for push-pull amplifiers in an easy to use surface mount package covering GSM, D-AMPS and NMT900 applications. The 3A412 is ideal for high volume


    Original     		PDF 3A412 VER11/3/00 NMT900 -55oC 125oC 3A412 impedance transformer 50 ohm

    3A525

    Abstract: No abstract text available
    Text: Model 3A525 Rev. A Balun Transformers 50Ω to 25Ω Balanced Description The 3A525 is a low profile balanced to unbalanced transformer in an easy to use surface mount package covering Japanese PDC, DCS and PCS receive push-pull amplifier and mixer applications. The 3A525 has an


    Original     		PDF 3A525 3A525

    AN025 Push-Pull High IP2 Amplifiers

    Abstract: ECB-100331 NGA-486 sga-6289 C 32725 ETC1-1-13 AN025 wide bandwidth D 811-25
    Text: DESIGN APPLICATION NOTE - AN025 Push-Pull High IP2 Amplifiers Abstract: With the abundance of data and voice traffic being transmitted across standard cable and wireless pathways and the ever increasing linearity requirements of CATV amplifiers, there is a great need for amplification that optimizes gain,


    Original     		PDF AN025 NGA-486 SGA-6289, V/150mA, SGA-6289 V/160mA, AN025 Push-Pull High IP2 Amplifiers ECB-100331 C 32725 ETC1-1-13 AN025 wide bandwidth D 811-25

    agilent ads balun

    Abstract: EB212 MRF19125 MRF21180 J493 advanced design system
    Text: Freescale Semiconductor Engineering Bulletin EB212 Rev. 0, 1/2004 Using Data Sheet Impedances for RF LDMOS Devices By: Darin Wagner INTRODUCTION This document explains the format used by Freescale for presenting LDMOS impedance information for both single - ended and push - pull devices on RF Power data


    Original     		PDF EB212 agilent ads balun EB212 MRF19125 MRF21180 J493 advanced design system

    7472B

    Abstract: RF push pull power amplifier 1008AF-901XKLC TC1-33-75G2 avx 603 TAT7472B LQH31HNR50K 001 soic TAT7472 ESD 2255
    Text: 75 Ohm RF Amplifier 50-1000 MHz TAT 7472B Advanced Product Information Overview The TAT7472B is a general purpose push pull CATV 75 Ohm RF Amplifier designed for use up to 1000 MHz. It is fabricated using Triquint’s GaAs pHEMT technology to optimize performance and cost. This high


    Original     		PDF 7472B TAT7472B R90728 7472B RF push pull power amplifier 1008AF-901XKLC TC1-33-75G2 avx 603 LQH31HNR50K 001 soic TAT7472 ESD 2255

    TRANSISTOR Z4

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Push-Pull RF Power Transistor MRF392 Designed primarily for wideband large–signal output and driver amplifier stages in the 30 to 500 MHz frequency range. • Specified 28 Volt, 400 MHz Characteristics —


    Original     		PDF MRF392 MRF392 TRANSISTOR Z4

    transistor z5

    Abstract: erie redcap IC 2025 NPN TRANSISTOR Z4 RF push pull power amplifier TRANSISTOR Z4 MRF392 redcap 7w120 transistor D 716
    Text: Order this document by MRF392/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Push-Pull RF Power Transistor MRF392 Designed primarily for wideband large–signal output and driver amplifier stages in the 30 to 500 MHz frequency range. • Specified 28 Volt, 400 MHz Characteristics —


    Original     		PDF MRF392/D MRF392 MRF392 i1-44-844-8298 transistor z5 erie redcap IC 2025 NPN TRANSISTOR Z4 RF push pull power amplifier TRANSISTOR Z4 redcap 7w120 transistor D 716

    Untitled

    Abstract: No abstract text available
    Text: AH11 The Communications Edge TM High Dynamic Range Dual Amplifier Product Features • 150 – 3000 MHz • +44 dBm OIP3 balanced configuration • +48 dBm OIP3 (dual push-pull configuration) • Single-ended performance: ! 13.5 dB Gain ! 2.7 dB Noise Figure


    Original     		PDF 1-800-WJ1-4401

    RF push pull power amplifier

    Abstract: 7466 class A push pull power amplifier class B push pull power amplifier balun ntsc MABA-007681-CT2010 R81017 186MA 04025A151JAT2A balun push pull
    Text: 75 Ohm RF Amplifier 50-1300 MHz TAT7466 Advanced Product Information Overview The TAT7466 is a 75 Ohm RF Amplifier designed for use up to 1300 MHz. The TAT7466 contains two separate amplifiers for push pull applications. It is fabricated using 6-inch GaAs pHEMT technology to


    Original     		PDF TAT7466 TAT7466 195mA 195mA, R81017 RF push pull power amplifier 7466 class A push pull power amplifier class B push pull power amplifier balun ntsc MABA-007681-CT2010 R81017 186MA 04025A151JAT2A balun push pull

    11978

    Abstract: No abstract text available
    Text: AH11 The Communications Edge TM High Dynamic Range Dual Amplifier Product Features • 150 – 3000 MHz • +44 dBm OIP3 balanced configuration • +48 dBm OIP3 (dual push-pull configuration) • Single-ended performance: ƒ 13.5 dB Gain ƒ 2.7 dB Noise Figure


    Original     		PDF 1-800-WJ1-4401 11978

    Z1 Transistor

    Abstract: MRF392
    Text: MOTOROLA Order this document by MRF392/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon Push-Pull RF Power Transistor MRF392 Designed primarily for wideband large–signal output and driver amplifier stages in the 30 to 500 MHz frequency range. • Specified 28 Volt, 400 MHz Characteristics —


    Original     		PDF MRF392/D MRF392 MRF392/D* Z1 Transistor MRF392

    MRF392

    Abstract: TRANSISTOR Z4 3142 equivalent J044 Z1 Transistor 6 pin transistor Z6 Z6 82 mini cap 744A-01 LX125
    Text: MOTOROLA Order this document by MRF392/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Push-Pull RF Power Transistor MRF392 Designed primarily for wideband large–signal output and driver amplifier stages in the 30 to 500 MHz frequency range. • Specified 28 Volt, 400 MHz Characteristics —


    Original     		PDF MRF392/D MRF392 MRF392/D* MRF392 TRANSISTOR Z4 3142 equivalent J044 Z1 Transistor 6 pin transistor Z6 Z6 82 mini cap 744A-01 LX125

    thermistor r5t

    Abstract: chip resistor 1206 c19a S1239 MOTOROLA P C3B Kemet bc17a GX-0300-55 R7B Connector RO3010
    Text: MOTOROLA MRF373 MRF373S The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs 60 W, 470 – 860 MHz, 28 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFETS Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this


    Original     		PDF MRF373S MRF373 31JUL04 31JAN05 thermistor r5t chip resistor 1206 c19a S1239 MOTOROLA P C3B Kemet bc17a GX-0300-55 R7B Connector RO3010

    6537 MARKING CODE

    Abstract: No abstract text available
    Text: AH11 The Communications Edge TM Product Information High Dynamic Range Dual Amplifier Product Features x 150 – 3000 MHz x +44 dBm OIP3 balanced configuration x +48 dBm OIP3 (dual push-pull configuration) x Single-ended performance: ƒ 13.5 dB Gain ƒ 2.7 dB Noise Figure


    Original     		PDF 1-800-WJ1-4401 6537 MARKING CODE

    MRF373 PUSH PULL

    Abstract: c19a chip resistor 1206 rogers C14A MRF373 MRF373 print circuit B07T MRF373S R7B Connector
    Text: MOTOROLA Order this document by MRF373/D SEMICONDUCTOR TECHNICAL DATA Product Is Not Recommended for New Design. The next generation of higher performance products are in development. Visit our online Selector Guides http://mot–sps.com/rf/sg/sg.html for scheduled introduction dates.


    Original     		PDF MRF373/D MRF373 MRF373S MRF373 MRF373 PUSH PULL c19a chip resistor 1206 rogers C14A MRF373 print circuit B07T MRF373S R7B Connector

    MRF373

    Abstract: RO3010 A419 MRF373 PUSH PULL C14A MRF373 print circuit P1210 MRF373S atc 174 BUY13
    Text: MOTOROLA The RF MOSFET Line MRF373 MRF373S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs 470 – 860 MHz, 60 W, 28 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFETS Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this


    Original     		PDF MRF373 MRF373S MRF373) MRF373 DEVICEMRF373/D RO3010 A419 MRF373 PUSH PULL C14A MRF373 print circuit P1210 MRF373S atc 174 BUY13

    MRF373R1

    Abstract: C19B C14A rf push pull mosfet power amplifier B07T MRF373SR1 chip resistor 1206 ATC 700 B 101 G P
    Text: ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 MOTOROLA Order this document by MRF373/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 470 – 860 MHz. The high gain and broadband performance of these


    Original     		PDF MRF373/D MRF373R1 MRF373SR1 MRF373R1 C19B C14A rf push pull mosfet power amplifier B07T MRF373SR1 chip resistor 1206 ATC 700 B 101 G P

    Untitled

    Abstract: No abstract text available
    Text: The EMC balun replaces the coaxial cable or the printed circuit board PCB , traditionally used to match push pull amplifiers. Push pull amplifiers use a pair of balanced/unbalanced transmission lines (baluns) to provide the proper 180° out of phase signal configuration


    OCR Scan     		PDF B4-1900-50-25 25Qout)

    balun push pull

    Abstract: No abstract text available
    Text: SURFACE MOUNT BALUNS ^ Save money in volume production by replacing manually installed baluns with our surface mount baluns! Available in tape-and-reel packaging. Patent pending. The EMC balun replaces the coaxial cable or the printed circuit board PCB , traditionally used to match push pull amplifiers. Push


    OCR Scan     		PDF B4-1900-50-25 balun push pull

    GSC371BAL2000

    Abstract: No abstract text available
    Text: HIGH POWER CHIP BALUN •Compact & High power handling. A "9 - W I S I T o •For Push-Pull ended power transistor. • 7 'V V I ^U 0 S S lca@ T ;T o •GSC-BAL series •Adjustment - free. Frequency Type Allowable Power [MHz] GSC184-BAL0600 120W 470-860 GSC172-BAL0800


    OCR Scan     		PDF GSC184-BAL0600 GSC172-BAL0800 GSC371-BAL2000 GSC376-BAL2500 To200 GSF746-LPF2700 GSF603-SEP0918 SF606-SEP1021 GSF710-SEP0918 L880-960 GSC371BAL2000