1310nm DFB BH LASER
Abstract: InGaAsP lens TO STM-16 LD SOURCE Aspheric Lens to56 ball Transmitter Optical Sub Assembly 1310nm FP Laser TOSA Monitor PD Capacitance 1 pF
Text: 1310nm InGaAsP strained MQW for FP-LD Ø1.5mm ball lens TO CAN KLT-131451S Rev. 006 Description KLT-131451x is long wavelength Fabry-Perot LD source in TO-56 package with ball lens cap. KLT-131451x consists of an InGaAsP strained multi-quantum well MQW laser diode(LD) and an InGaAs
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1310nm
KLT-131451S
KLT-131451x
25Gbps.
1310nm DFB BH LASER
InGaAsP
lens TO
STM-16
LD SOURCE
Aspheric Lens
to56 ball
Transmitter Optical Sub Assembly 1310nm FP Laser TOSA Monitor PD Capacitance 1 pF
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Abstract: 1310nm DFB BH LASER InGaAsP to56 ball laser DFB 1310nm 10mW STM-16 ball lens Aspheric Lens TO56 package Transmitter Optical Sub Assembly 1310nm FP Laser TOSA Monitor PD Capacitance 1 pF
Text: 1310nm InGaAsP strained MQW for FP-LD Ø2mm ball lens TO CAN KLT-131452x Rev.006 Description KLT-131452x is long wavelength Fabry-Perot LD source in TO-56 package with ball lens cap. KLT-131452x consists of an InGaAsP strained multi-quantum well MQW laser diode(LD) and an InGaAs
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1310nm
KLT-131452x
KLT-131452x
25Gbps.
lens TO
1310nm DFB BH LASER
InGaAsP
to56 ball
laser DFB 1310nm 10mW
STM-16
ball lens
Aspheric Lens
TO56 package
Transmitter Optical Sub Assembly 1310nm FP Laser TOSA Monitor PD Capacitance 1 pF
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Abstract: STM-16 tosa 5mw 1550nm 5mw laser diode slope efficiency to56 ball TO56 ball lens cap
Text: 1550nm InGaAsP strained MQW for FP-LD Ø1.5mm ball lens TO CAN KLT-155451x Rev. 004 Description KLT-155451x series are long wavelength Fabry-Perot LD sources in TO-56 package with ball lens cap KLT-155451x series consist of an InGaAsP strained multi-quantum well MQW laser diode(LD) and
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1550nm
KLT-155451x
KLT-155451x
155Mbps
lens TO
STM-16
tosa 5mw
1550nm 5mw laser diode slope efficiency
to56 ball
TO56 ball lens cap
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laser DFB 1550nm 10mW
Abstract: TO56 package STM-16 "TO-56 package" Fabry-Perot 1550 nm to56 ball lens TO
Text: 1550nm InGaAsP strained MQW for FP-LD Ø2mm ball lens TO CAN KLT-155452x Rev.002 Description KLT-155452x series are long wavelength Fabry-Perot LD sources in TO-56 package with ball lens cap KLT-155452x series consist of an InGaAsP strained multi-quantum well MQW laser diode(LD) and an InGaAs
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1550nm
KLT-155452x
KLT-155452x
155Mbps
laser DFB 1550nm 10mW
TO56 package
STM-16
"TO-56 package"
Fabry-Perot 1550 nm
to56 ball
lens TO
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5v 10mA reed relay
Abstract: B40-0002 B40-0003
Text: B40 4-Channel RF Relays Ball Grid Array 4-Channel Relays The B40 is four independent form A channels in one quad package. Coto’s Ball Grid Array BGA construction offers a breakthrough in reed relay performance. This patented technology1 allows for shorter
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40Sec
2000Hz
5v 10mA reed relay
B40-0002
B40-0003
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B40-0002
Abstract: B40-0003 J-STD-020B IC TESTERS RS436
Text: B40 4-Channel RF Relays Ball Grid Array 4-Channel Relays The B40 is four independent form A channels in one quad package. Coto’s Ball Grid Array BGA construction offers a breakthrough in reed relay performance. This patented technology1 allows for shorter
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40Sec
2000Hz
J-STD-020B
B40-0002
B40-0003
IC TESTERS
RS436
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Untitled
Abstract: No abstract text available
Text: MP1400 7V Input, 0.6A Peak, 1.5MHz Negative DCDC Power Converter In 8-ball CSP Package DESCRIPTION FEATURES The MP1400 is a monolithic negative DCDC power converter with built-in internal power MOSFET. The DC-DC IC has a tiny surface mount 0.8mm x 1.6mm 8-ball CSP package. It
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MP1400
MP1400
600mA
MO-211,
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super chip
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET AE0.2E FLASH MEMORY CMOS 8 M 1 M x 8/512 K × 16 BIT MBM29SL800TE/BE-90/10 • DESCRIPTION The MBM29SL800TE/BE are a 8 M-bit, 1.8 V-only Flash memory organized as 1 Mbytes of 8 bits each or 512 Kwords of 16 bits each. The MBM29SL800TE/BE are offered in a 48-ball FBGA and xx-ball SCSP packages.
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MBM29SL800TE/BE-90/10
MBM29SL800TE/BE
48-ball
MBM29SL800TE/BE-90
MBM29SL800TE/BE-10
100ns
super chip
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Untitled
Abstract: No abstract text available
Text: B41 4-CHANNEL RF REED RELAYS B41 Series Ball Grid Array 4-Channel Relays The B41 contains four independent form A channels in one planar quad package. Coto’s Ball Grid Array BGA construction offers a breakthrough in reed relay performance. This patented technology1 allows for shorter RF paths in a controlled 50 Ω environment to minimize signal attentuation. The designer is now able to switch or pass
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B41ROHS
J-STD-020B
B41ROHS,
2000Hz
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20871-4E FLASH MEMORY CMOS 8 M 1 M x 8/512 K × 16 BIT MBM29SL800TD/BD-10/12 • DESCRIPTION The MBM29SL800TD/BD are a 8 M-bit, 1.8 V-only Flash memory organized as 1 Mbytes of 8 bits each or 512 Kwords of 16 bits each. The MBM29SL800TD/BD are offered in a 48-pin TSOP (I) , 48-ball FBGA and 48-ball
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DS05-20871-4E
MBM29SL800TD/BD-10/12
MBM29SL800TD/BD
48-pin
48-ball
48-ball
MBM29SL800TD/MBM29SL800BD
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FPT-48P-M19
Abstract: FPT-48P-M20
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20871-5E FLASH MEMORY CMOS 8 M 1 M x 8/512 K × 16 BIT MBM29SL800TD/BD-10/12 • DESCRIPTION The MBM29SL800TD/BD are a 8 M-bit, 1.8 V-only Flash memory organized as 1 Mbytes of 8 bits each or 512 Kwords of 16 bits each. The MBM29SL800TD/BD are offered in a 48-pin TSOP (I) , 48-ball FBGA and 48-ball
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DS05-20871-5E
MBM29SL800TD/BD-10/12
MBM29SL800TD/BD
48-pin
48-ball
48-ball
MBM29SL800TD/MBM29SL800BD
F0210
FPT-48P-M19
FPT-48P-M20
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20871-5E FLASH MEMORY CMOS 8 M 1 M x 8/512 K × 16 BIT MBM29SL800TD/BD-10/12 • DESCRIPTION The MBM29SL800TD/BD are a 8 M-bit, 1.8 V-only Flash memory organized as 1 Mbytes of 8 bits each or 512 Kwords of 16 bits each. The MBM29SL800TD/BD are offered in a 48-pin TSOP (I) , 48-ball FBGA and 48-ball
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DS05-20871-5E
MBM29SL800TD/BD-10/12
MBM29SL800TD/BD
48-pin
48-ball
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LCU130582
Abstract: No abstract text available
Text: 1310nm Laser Diode LCU130582E/F •Features Un-cooled Laser diode with MQW structure Wide operation temperature range Dew point below -40oC Both ball lens and flat window cap available ■External dimensions Unit : mm ■Absolute Maximum Ratings(Tc=25℃)
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1310nm
LCU130582E/F
-40oC
laser-comp85
lcu130582
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LuminentOIC
Abstract: No abstract text available
Text: 1310nm Light Emitting Diode L-13-155-G-B Features • High efficiency • -40 to 85ºC operating temperature • Hermetically sealed active component • To-46 packaging with integrated ball lens cap • Optical data communication transmitter application
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1310nm
L-13-155-G-B
To-46
C/10sec
LUMNDS514-OCT1405
LuminentOIC
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LCU150588F
Abstract: No abstract text available
Text: Laser Diodes 1550nm Laser Diode 1550nm Laser Diode LCU150588F •Features Un-cooled Laser diode with MQW structure Wide operation temperature range Dew point below -40oC Both ball lens and flat window cap available ■External dimensions Unit : mm ■Absolute Maximum Ratings(Tc=25℃)
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1550nm
LCU150588F
-40oC
divers-vis/lcu/lcu150588f
LCU150588F
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B100
Abstract: FODB100 FODB101 FODB102
Text: SINGLE CHANNEL MICROCOUPLER FODB100 FODB101 FODB102 DESCRIPTION The FODB100, FODB101 and FODB102 single channel MICROCOUPLERS™ are all Pb-free, low profile miniature surface mount optocouplers in a Ball Grid Array BGA package. Each consists of an aluminum gallium arsenide (AlGaAs) infrared emitting diode
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FODB100
FODB101
FODB102
FODB100,
FODB101
FODB102
2500Vrms
120Kbit/s
B100
FODB100
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RLT1300-BL
Abstract: No abstract text available
Text: RLT1300-BL TECHNICAL DATA Infrared Laser Diode Features Applications • • • • • • Lasing Mode Structure: single mode Peak Wavelength : typ. 1310 nm Optical Ouput Power: 5 mW Package: 5.6 mm, 4-pin, ball lens Optical Fiber Communication Free-space Optical Communication
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RLT1300-BL
RLT1300-BL
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NC7SZ74
Abstract: 16862 FSTU16211 FSTU162211 FSTU162450 FSTU16345 FSTU16861 FSTU3125 FSTU32160 FSTU32160A
Text: Fairchild Interface & Logic Notebook Solutions Superior Performance Solutions Low Voltage Logic Switches TinyLogic Optoelectronics Smaller Packaging Solutions MicroPak™ Ball Grid Array BGA Analog Discrete Interface & Logic Applications Docking station bus switch isolation
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EIA-541
Abstract: EIA 481 EIA-481 95062 EIA481
Text: Packaging Information Vishay High Power Products FlipKY Ø 7" 8 mm A1 ball location 8 mm 4 mm Feed direction Conforms to EIA-481 and EIA-541 Document Number: 95062 Revision: 22-Apr-09 For technical questions concerning discrete products, contact: diodes-tech@vishay.com
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EIA-481
EIA-541
22-Apr-09
EIA-541
EIA 481
95062
EIA481
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Untitled
Abstract: No abstract text available
Text: 1.25Gbps InGaAs PIN PD for TO 46 PKG KRT-13221x Description KRT-13221x are InGaAs PIN photo diodes with various diameter options of active area. KRT-13221x are packaged in industry standard TO-46 stem with long ball lens cap. They are recommended for digital optical communications.
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25Gbps
KRT-13221x
KRT-13221x
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BAS16LT1
Abstract: DS1608C NCP1403 NCP1403SNT1 NIS6111 NTD110N02R
Text: AND8194/D NIS6111 Bias Circuits Prepared by: Alan Ball ON Semiconductor http://onsemi.com General Description ORing Circuits The NIS6111 is a hybrid diode containing a power MOSFET, polarity comparator and internal bias circuit. It is designed to operate as an ideal diode by sensing the voltage
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AND8194/D
NIS6111
BAS16LT1
DS1608C
NCP1403
NCP1403SNT1
NTD110N02R
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1310nm TRANSMITTER CIRCUIT DIAGRAM
Abstract: TO46 package L-13-155-G-B L-13-155-G-BB TO46 13155
Text: 1310nm L –13 -155-G-B L-13-155-G-BB 1310nm Light Emitting Diodes Features High efficiency -40 ~85℃ operating temperature Hermetically sealed active component Packaging TO-46 package with integrated ball lens cap L-13-155-G-B/BB Applications Optical data communication
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1310nm
-155-G-B
L-13-155-G-BB
1310nm
L-13-155-G-B/BB)
240/10sec
L-13-155-G-B
1310nm TRANSMITTER CIRCUIT DIAGRAM
TO46 package
L-13-155-G-B
L-13-155-G-BB
TO46
13155
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receiver krt 30
Abstract: KRT 30 IR receiver Korea KRT-14211C
Text: 2.5G InGaAs PIN PD for TO 46 PKG KRT-14211C Description KRT-14211C are InGaAs PIN photo diodes with various diameter options of active area. KRT-14211C are packaged in industry standard TO-46 stem with long ball lens cap. They are recommended for digital optical communications.
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KRT-14211C
KRT-14211C
receiver krt 30
KRT 30
IR receiver Korea
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13001E
Abstract: No abstract text available
Text: laser diodes U iA ii 1310nm OED-LDC13001 SERIES Description The OED-LDC13001 Series are MQW lnA1GaAs/lnP 1310 nm laser diodes with a flat-window/ball-lens caps. They are suitable for short and medium range optical communication applications optical data links,
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1310nm
OED-LDC13001
OED-LDC13001EB)
TA-NWT-000983
13001EB
13001EA
13001E
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