BA4 amplifier
Abstract: ba4 RF amplifier
Text: BIPOLARICS, INC. Part Number BA4 CASCADABLE SILICON BIPOLAR MONOLITHIC MICROWAVE INTEGRATED AMPLIFIER PRODUCT SPECIFICATION FEATURES: • Wide 3dB bandwidth - DC to 3.8 GHz in ceramic Micro-X - DC to 3.6 GHz in plastic packages • Suitable for 7V systems
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Untitled
Abstract: No abstract text available
Text: Advanced Data Sheet SBA-4089 Product Description DC-5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Sirenza Microdevices’ SBA-4089 is a high performance InGaP/GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process
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SBA-4089
SBA-4089
1950MHz
EDS-102822
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sba-4086
Abstract: No abstract text available
Text: SBA-4086 Product Description DC-5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Sirenza Microdevices’ SBA-4086 is a high performance InGaP/GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5 GHz with
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SBA-4086
SBA-4086
EDS-102821
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BA4Z
Abstract: sba4089 SBA-4089 sba-4089z InP transistor HEMT sot 163 Package
Text: SBA-4089 Z SBA-4089(Z) DCto5GHz, CASCADABLE InGaP/GaAs HBT MMIC AMPLIFIER Package: SOT-89 Product Description Features RFMD’s SBA-4089 is a high performance InGaP/GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5GHz with excellent thermal
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SBA-4089
OT-89
Matching-5570
SBA4089"
SBA4089Z"
SBA-4089Z
SBA-4089
BA4Z
sba4089
sba-4089z
InP transistor HEMT
sot 163 Package
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Untitled
Abstract: No abstract text available
Text: SBA-4089 Z SBA-4089(Z) DCto5GHz, CASCADABLE InGaP/GaAs HBT MMIC AMPLIFIER RoHS Compliant and Pb-Free Product (Z Part Number) Package: SOT-89 Product Description Features RFMD’s SBA-4089 is a high performance InGaP/GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5GHz with excellent thermal
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SBA-4089
OT-89
areBA-4089
SBA4089â
SBA4089Zâ
SBA-4089Z
SBA-4089
EDS-102822
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BA4 amplifier
Abstract: SIRENZA MARKING
Text: Preliminary Data Sheet SBA-4086 Product Description DC-5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Sirenza Microdevices’ SBA-4086 is a high performance InGaP/GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process
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SBA-4086
SBA-4086
1950MHz
EDS-102821
BA4 amplifier
SIRENZA MARKING
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SBA-4089
Abstract: S1-101 BA433 ba4 transistor
Text: SBA-4089 Product Description DC-5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Sirenza Microdevices’ SBA-4089 is a high performance InGaP/GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5 GHz with
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SBA-4089
SBA-4089
1950MHz
EDS-102822
S1-101
BA433
ba4 transistor
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Tone Design Technology
Abstract: ba4 transistor 4086 SBA-4086Z SBA-4086 InP transistor HEMT
Text: SBA-4086 Z SBA-4086(Z) DCto5GHz, CASCADABLE InGaP/GaAs HBT MMIC AMPLIFIER RoHS Compliant and Pb-Free Product (Z Part Number) Package: SOT-86 Product Description Features RFMD’s SBA-4086 is a high performance InGaP/GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed
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SBA-4086
OT-86
SBA-4086
SBA-4086Z
EDS-102821
Tone Design Technology
ba4 transistor
4086
SBA-4086Z
InP transistor HEMT
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TRANSISTOR BI 187
Abstract: No abstract text available
Text: SBA-4089 Product Description DC-5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Sirenza Microdevices SBA-4089 is a high performance InGaP/GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5 GHz with
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SBA-4089
SBA-4089
1950MHz
-45dBrati
EDS-102822
TRANSISTOR BI 187
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ba4 transistor
Abstract: SBA-4086 ba4 RF amplifier
Text: SBA-4086 Product Description DC-5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Sirenza Microdevices SBA-4086 is a high performance InGaP/GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5 GHz with
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SBA-4086
SBA-4086
1950MHz
EDS-102821
ba4 transistor
ba4 RF amplifier
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BA4Z
Abstract: sba4089z SIRENZA MARKING SBA-4089 sba-4089z
Text: SBA-4089 Product Description SBA-4089Z Sirenza Microdevices’ SBA-4089 is a high performance InGaP/ GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5 GHz with excellent thermal
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SBA-4089
SBA-4089Z
SBA-4089
EDS-102822
BA4Z
sba4089z
SIRENZA MARKING
sba-4089z
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marking D mmic b4z
Abstract: 4086 datasheet b4z diode diode marking B4Z SBA-4086 SBA-4086Z SIRENZA MARKING
Text: SBA-4086 Product Description SBA-4086Z Sirenza Microdevices’ SBA-4086 is a high performance InGaP/GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5 GHz with excellent thermal
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SBA-4086
SBA-4086Z
SBA-4086
EDS-102821
marking D mmic b4z
4086 datasheet
b4z diode
diode marking B4Z
SBA-4086Z
SIRENZA MARKING
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LM1205N
Abstract: ccd board Circuit Schematic Diagram Electronic 11831 differential pair cascode darlington C1995 LM1205 N28B Q102
Text: LM1205 130 MHz RGB Video Amplifier System with Blanking Y General Description The LM1205 is a very high frequency video amplifier system intended for use in high resolution RGB monitor applications In addition to the three matched video amplifiers the LM1205 contains three gated single ended input black level
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LM1205
LM1205
LM1205N
ccd board Circuit Schematic Diagram Electronic
11831
differential pair cascode darlington
C1995
N28B
Q102
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LM1205N
Abstract: ccd board Circuit Schematic Diagram Electronic schematic diagram lcd monitor TL 150 11831 differential pair cascode darlington C1995 LM1205 N28B Q102 E1V09
Text: LM1205 130 MHz RGB Video Amplifier System with Blanking Y General Description The LM1205 is a very high frequency video amplifier system intended for use in high resolution RGB monitor applications In addition to the three matched video amplifiers the LM1205 contains three gated single ended input black level
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LM1205
LM1205
LM1205N
ccd board Circuit Schematic Diagram Electronic
schematic diagram lcd monitor TL 150
11831
differential pair cascode darlington
C1995
N28B
Q102
E1V09
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Untitled
Abstract: No abstract text available
Text: SBA4086Z SBA4086Z DCto5GHz, CASCADABLE InGaP/GaAs HBT MMIC AMPLIFIER Package: SOT-86 Product Description Features RFMD’s SBA4086Z is a high performance InGaP/GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to
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SBA4086Z
OT-86
SBA4086Z
SBA4086ZSQ
SBA4086ZPCK1
SBA4086ZSR
850MHz,
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Untitled
Abstract: No abstract text available
Text: SBA5086Z SBA5086Z DCto5GHz, CASCADABLE InGaP/GaAs HBT MMIC AMPLIFIER Package: SOT-86 Product Description Features RFMD’s SBA5086Z is a high performance InGaP/GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5GHz with excellent thermal
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SBA5086Z
OT-86
SBA5086Z
SBA5086ZSQ
SBA5086ZPCK1
SBA5086ZSR
850MHz,
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Untitled
Abstract: No abstract text available
Text: SBA4089Z SBA4089Z DCto5GHz, CASCADABLE InGaP/GaAs HBT MMIC AMPLIFIER Package: SOT-89 Product Description Features RFMD’s SBA4089Z is a high performance InGaP/GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5GHz with excellent thermal
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SBA4089Z
OT-89
SBA4089Z
DS111204
SBA-4089
SBA-4089Z
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201BLM02
Abstract: mark Gb5 201PW021 circuit diagram flourescent tube thc63lvdf83a ATI 216 lvds connector 14 pin 1.0mm 1280Y TC4-19 trf 640 a
Text: PRELIMINARY DATA SHEET TFT COLOR LCD MODULE NL128102AC31-02 51 cm 20.1 inches , 1280 ´ 1024 pixels, 8bit/color, Incorporated backlight and Inverter Ultra wide viewing angle DESCRIPTION NL128102AC31-02 is a TFT (Thin Film Transistor) active matrix color liquid crystal display (LCD) comprising amorphous
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NL128102AC31-02
NL128102AC31-02
THC63LVDF84A
201BLM02
mark Gb5
201PW021
circuit diagram flourescent tube
thc63lvdf83a
ATI 216
lvds connector 14 pin 1.0mm
1280Y
TC4-19
trf 640 a
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differential pair cascode darlington
Abstract: C1996 LM1208 LM1208N LM1209 LM1209N N28B
Text: LM1208 LM1209 130 MHz 100 MHz RGB Video Amplifier System with Blanking Y General Description The LM1208 LM1209 is a very high frequency video amplifier system intended for use in high resolution RGB monitor applications In addition to the three matched video amplifiers the LM1208 LM1209 contains three gated single ended input black level clamp comparators for brightness control three matched DC controlled attenuators for contrast
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LM1208
LM1209
LM1209
differential pair cascode darlington
C1996
LM1208N
LM1209N
N28B
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Untitled
Abstract: No abstract text available
Text: LM1205 LM1207 130 MHz 85 MHz RGB Video Amplifier System with Blanking Features Y Y Y Y Y Y Applications Y Y High resolution RGB CRT monitors Video AGC amplifiers Wideband amplifiers with gain and DC offset controls Interface amplifiers for LCD or CCD systems
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LM1205
LM1207
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LM1205N
Abstract: ccd board Circuit Schematic Diagram Electronic schematic diagram lcd monitor TL 150 differential pair cascode darlington TRIO R27 DIFFERENTIAL VIDEO AMPLIFIER crt monitor PCB LAYOUT LM1207N crt monitor circuit diagram crt monitor functional diagram
Text: LM1205 LM1207 130 MHz 85 MHz RGB Video Amplifier System with Blanking Y General Description The LM1205 LM1207 is a very high frequency video amplifier system intended for use in high resolution RGB monitor applications In addition to the three matched video amplifiers the LM1205 LM1207 contains three gated single ended input black level clamp comparators for brightness control three matched DC controlled attenuators for contrast
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LM1205
LM1207
LM1207
LM1205N
ccd board Circuit Schematic Diagram Electronic
schematic diagram lcd monitor TL 150
differential pair cascode darlington
TRIO R27
DIFFERENTIAL VIDEO AMPLIFIER
crt monitor PCB LAYOUT
LM1207N
crt monitor circuit diagram
crt monitor functional diagram
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51497L
Abstract: No abstract text available
Text: I • MITSUBISHI ICs AV COMMON ba4*iû2b D O l S t ^ b^fl ■ n i T 2 MITSUBISHI ELEK (LINEAR) M51497L LEE D SYNC DETECTOR DESCRIPTION The M 51497L is a sem iconductor integrated circuit fo r sync d e PIN CONFIGURATION (TOP VIEW) N tection for VCR and TV applications. This IC contains a PLL
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M51497L
51497L
001Sb33
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BA4510F
Abstract: BA4510FV IC i voltage follower
Text: Standard ICs Dual high slew rate operational amplifier B A 4 5 1 0 F/BA4 5 1 OFV The BA451 OF an d B A 4510FV are m o n o lith ic ICs th a t co n ta in tw o o p e ra tio n a l a m p lifie rs w ith h ig h sle w rate, fe a tu rin g p h a s e c o m p e n s a tio n . T h e s e ICs can b e d rive n w ith a lo w -v o lta g e p o w e r s u p p ly, re q u irin g a p o w e r s u p p ly ra n g e o f
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BA4510F/BA451OFV
BA451
BA4510FV
70Efl,
BA4510FV
00B1437
BA4510F
IC i voltage follower
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FET BFW10
Abstract: BFW10 pins OF FET BFW11 OF FET BFW10 BFW10 FET BSV81 BF327 BFW10 FET transistor BFS28 FET BFW11
Text: Transistors silicon n-channel field effect transistors Type No. Drawing reference book 1 parts 1 and 2 e c 3 O VDB v SB V (V ) M axim um Ratings - VgBM 1dm Tj m ax. (V ) (m A) (°C ) Special Features Pt„t rOSion) 1'DStoffl at 25°C (mW) (£2) (£ï) INSULATED GATE FET (MOST)
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BSV81
h--22->
crt6-25
FET BFW10
BFW10 pins
OF FET BFW11
OF FET BFW10
BFW10 FET
BF327
BFW10 FET transistor
BFS28
FET BFW11
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