BA4 amplifier
Abstract: ba4 RF amplifier
Text: BIPOLARICS, INC. Part Number BA4 CASCADABLE SILICON BIPOLAR MONOLITHIC MICROWAVE INTEGRATED AMPLIFIER PRODUCT SPECIFICATION FEATURES: • Wide 3dB bandwidth - DC to 3.8 GHz in ceramic Micro-X - DC to 3.6 GHz in plastic packages • Suitable for 7V systems
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Untitled
Abstract: No abstract text available
Text: CV111-1A PCS/DCS-band High Linearity Downconverter 1234 BE 76472 BF 1234 1234 879764 B BD BC BB4 4 764 BA4 764 7644 B 123 123 C A 123 123 D A 123 43 44 123 E A 7 AF 123 564 879564 4 4 4 AA AB AC 123 A 4 879 Typical applications include frequency down conversion,
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CV111-1A
CDMA2000,
am020
1-800-WJ1-4401
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Untitled
Abstract: No abstract text available
Text: Advanced Data Sheet SBA-4089 Product Description DC-5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Sirenza Microdevices’ SBA-4089 is a high performance InGaP/GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process
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SBA-4089
SBA-4089
1950MHz
EDS-102822
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sba-4086
Abstract: No abstract text available
Text: SBA-4086 Product Description DC-5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Sirenza Microdevices’ SBA-4086 is a high performance InGaP/GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5 GHz with
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SBA-4086
SBA-4086
EDS-102821
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BA4Z
Abstract: sba4089 SBA-4089 sba-4089z InP transistor HEMT sot 163 Package
Text: SBA-4089 Z SBA-4089(Z) DCto5GHz, CASCADABLE InGaP/GaAs HBT MMIC AMPLIFIER Package: SOT-89 Product Description Features RFMD’s SBA-4089 is a high performance InGaP/GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5GHz with excellent thermal
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SBA-4089
OT-89
Matching-5570
SBA4089"
SBA4089Z"
SBA-4089Z
SBA-4089
BA4Z
sba4089
sba-4089z
InP transistor HEMT
sot 163 Package
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Untitled
Abstract: No abstract text available
Text: SBA-4089 Z SBA-4089(Z) DCto5GHz, CASCADABLE InGaP/GaAs HBT MMIC AMPLIFIER RoHS Compliant and Pb-Free Product (Z Part Number) Package: SOT-89 Product Description Features RFMD’s SBA-4089 is a high performance InGaP/GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5GHz with excellent thermal
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SBA-4089
OT-89
areBA-4089
SBA4089â
SBA4089Zâ
SBA-4089Z
SBA-4089
EDS-102822
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BA4 amplifier
Abstract: SIRENZA MARKING
Text: Preliminary Data Sheet SBA-4086 Product Description DC-5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Sirenza Microdevices’ SBA-4086 is a high performance InGaP/GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process
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SBA-4086
SBA-4086
1950MHz
EDS-102821
BA4 amplifier
SIRENZA MARKING
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SBA-4089
Abstract: S1-101 BA433 ba4 transistor
Text: SBA-4089 Product Description DC-5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Sirenza Microdevices’ SBA-4089 is a high performance InGaP/GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5 GHz with
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SBA-4089
SBA-4089
1950MHz
EDS-102822
S1-101
BA433
ba4 transistor
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Tone Design Technology
Abstract: ba4 transistor 4086 SBA-4086Z SBA-4086 InP transistor HEMT
Text: SBA-4086 Z SBA-4086(Z) DCto5GHz, CASCADABLE InGaP/GaAs HBT MMIC AMPLIFIER RoHS Compliant and Pb-Free Product (Z Part Number) Package: SOT-86 Product Description Features RFMD’s SBA-4086 is a high performance InGaP/GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed
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SBA-4086
OT-86
SBA-4086
SBA-4086Z
EDS-102821
Tone Design Technology
ba4 transistor
4086
SBA-4086Z
InP transistor HEMT
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TRANSISTOR BI 187
Abstract: No abstract text available
Text: SBA-4089 Product Description DC-5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Sirenza Microdevices SBA-4089 is a high performance InGaP/GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5 GHz with
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SBA-4089
SBA-4089
1950MHz
-45dBrati
EDS-102822
TRANSISTOR BI 187
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ba4 transistor
Abstract: SBA-4086 ba4 RF amplifier
Text: SBA-4086 Product Description DC-5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Sirenza Microdevices SBA-4086 is a high performance InGaP/GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5 GHz with
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SBA-4086
SBA-4086
1950MHz
EDS-102821
ba4 transistor
ba4 RF amplifier
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BA4Z
Abstract: sba4089z SIRENZA MARKING SBA-4089 sba-4089z
Text: SBA-4089 Product Description SBA-4089Z Sirenza Microdevices’ SBA-4089 is a high performance InGaP/ GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5 GHz with excellent thermal
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SBA-4089
SBA-4089Z
SBA-4089
EDS-102822
BA4Z
sba4089z
SIRENZA MARKING
sba-4089z
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marking D mmic b4z
Abstract: 4086 datasheet b4z diode diode marking B4Z SBA-4086 SBA-4086Z SIRENZA MARKING
Text: SBA-4086 Product Description SBA-4086Z Sirenza Microdevices’ SBA-4086 is a high performance InGaP/GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5 GHz with excellent thermal
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SBA-4086
SBA-4086Z
SBA-4086
EDS-102821
marking D mmic b4z
4086 datasheet
b4z diode
diode marking B4Z
SBA-4086Z
SIRENZA MARKING
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LM1205N
Abstract: ccd board Circuit Schematic Diagram Electronic 11831 differential pair cascode darlington C1995 LM1205 N28B Q102
Text: LM1205 130 MHz RGB Video Amplifier System with Blanking Y General Description The LM1205 is a very high frequency video amplifier system intended for use in high resolution RGB monitor applications In addition to the three matched video amplifiers the LM1205 contains three gated single ended input black level
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LM1205
LM1205
LM1205N
ccd board Circuit Schematic Diagram Electronic
11831
differential pair cascode darlington
C1995
N28B
Q102
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differential pair cascode darlington
Abstract: C1996 LM1208 LM1208N LM1209 LM1209N N28B
Text: LM1208 LM1209 130 MHz 100 MHz RGB Video Amplifier System with Blanking Y General Description The LM1208 LM1209 is a very high frequency video amplifier system intended for use in high resolution RGB monitor applications In addition to the three matched video amplifiers the LM1208 LM1209 contains three gated single ended input black level clamp comparators for brightness control three matched DC controlled attenuators for contrast
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LM1208
LM1209
LM1209
differential pair cascode darlington
C1996
LM1208N
LM1209N
N28B
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Untitled
Abstract: No abstract text available
Text: LM1205 LM1207 130 MHz 85 MHz RGB Video Amplifier System with Blanking Features Y Y Y Y Y Y Applications Y Y High resolution RGB CRT monitors Video AGC amplifiers Wideband amplifiers with gain and DC offset controls Interface amplifiers for LCD or CCD systems
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LM1205
LM1207
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LM1205N
Abstract: ccd board Circuit Schematic Diagram Electronic schematic diagram lcd monitor TL 150 differential pair cascode darlington TRIO R27 DIFFERENTIAL VIDEO AMPLIFIER crt monitor PCB LAYOUT LM1207N crt monitor circuit diagram crt monitor functional diagram
Text: LM1205 LM1207 130 MHz 85 MHz RGB Video Amplifier System with Blanking Y General Description The LM1205 LM1207 is a very high frequency video amplifier system intended for use in high resolution RGB monitor applications In addition to the three matched video amplifiers the LM1205 LM1207 contains three gated single ended input black level clamp comparators for brightness control three matched DC controlled attenuators for contrast
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LM1205
LM1207
LM1207
LM1205N
ccd board Circuit Schematic Diagram Electronic
schematic diagram lcd monitor TL 150
differential pair cascode darlington
TRIO R27
DIFFERENTIAL VIDEO AMPLIFIER
crt monitor PCB LAYOUT
LM1207N
crt monitor circuit diagram
crt monitor functional diagram
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Untitled
Abstract: No abstract text available
Text: LM1205,LM1207 LM1205 LM1207 130 MHz/85 MHz RGB Video Amplifier System with Blanking Literature Number: SNVS111A LM1205 LM1207 130 MHz 85 MHz RGB Video Amplifier System with Blanking Features Y Y Y Y Y Y Applications Y Y High resolution RGB CRT monitors Video AGC amplifiers
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LM1205
LM1207
LM1207
Hz/85
SNVS111A
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max14920
Abstract: MAX14921 fet ba7 max17501 max14850
Text: EVALUATION KIT AVAILABLE MAX14920/MAX14921 High-Accuracy 12-/16-Cell Measurement AFEs General Description The MAX14920/MAX14921 battery measurement analog front-end devices accurately sample cell voltages and provide level shifting for primary/secondary battery packs
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MAX14920/MAX14921
12-/16-Cell
MAX14920
MAX14921
fet ba7
max17501
max14850
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Untitled
Abstract: No abstract text available
Text: EVALUATION KIT AVAILABLE MAX14920/MAX14921 High-Accuracy 12-/16-Cell Measurement AFEs General Description The MAX14920/MAX14921 battery measurement analog front-end devices accurately sample cell voltages and provide level shifting for primary/secondary battery packs
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MAX14920/MAX14921
12-/16-Cell
MAX14920/MAX14921
MAX14920
MAX14921
monitorX14920
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BA4510F
Abstract: BA4510FV IC i voltage follower
Text: Standard ICs Dual high slew rate operational amplifier B A 4 5 1 0 F/BA4 5 1 OFV The BA451 OF an d B A 4510FV are m o n o lith ic ICs th a t co n ta in tw o o p e ra tio n a l a m p lifie rs w ith h ig h sle w rate, fe a tu rin g p h a s e c o m p e n s a tio n . T h e s e ICs can b e d rive n w ith a lo w -v o lta g e p o w e r s u p p ly, re q u irin g a p o w e r s u p p ly ra n g e o f
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BA4510F/BA451OFV
BA451
BA4510FV
70Efl,
BA4510FV
00B1437
BA4510F
IC i voltage follower
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Untitled
Abstract: No abstract text available
Text: 7 ö 2 ficm □ D D 'iim IRHPI T il ROHfTl Products Type Page Semiconductor IC B A 4 5 1 OF STRUCTURE Silicon Monolithic IntegratedCircuit TYPE BA45 10F PRODUCT SERIES Dual O p e ra tio n a l 1/7 A m p lif ir e s PACKAGE OUTLINES Figure 1 Plastic Mold
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Untitled
Abstract: No abstract text available
Text: C ütO U H I IF il n FLH826A4N H l il \p_ ^ ul I I R nW \V aV/cU I d I J^ . UR I Q HI I7£— A i lmV Ii Id iI—. i11c i11— iid I 1 / • ! ow co^î hinh rv^rform^nrp ^ 77^ to S f-iH? ■V! ■fe power amplifier 20dB gain, 8 watt output power Compact package with SMA connectors
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FLH826A4N
-40dBc
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4510 opamp
Abstract: VF10 BA45 BA4510
Text: ? a 2 ö cm IRHM 0DCH114 T i l RDHm Products Type Page Semiconductor IC B A 4 51 0 F STRUCTURE Silicon Monolithic IntegratedC ircuit TYPE BA45 10F PRODUCT SERIESD u a l PACKAGE OUTLINES BLOCK DIAGRAM SHEMATIC DIAGRAM Operational Figure Figure Figure Amp 1 i f i r e s
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0DCH114
BA4510
X100X
4510 opamp
VF10
BA45
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