RMQS2A1818DGBA-332#AC0
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Renesas Electronics Corporation
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18-Mbit QDR™ II SRAM 2-word Burst |
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RMQS2A1836DGBA-332#AC0
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Renesas Electronics Corporation
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18-Mbit QDR™ II SRAM 2-word Burst |
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RMQS2A3618DGBA-332#AC0
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Renesas Electronics Corporation
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36-Mbit QDR™ II SRAM 2-word Burst |
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RMQS2A3636DGBA-332#AC0
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Renesas Electronics Corporation
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36-Mbit QDR™ II SRAM 2-word Burst |
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SiT8918BA-33-33E-75.000000
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SiTime
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1 to 110 MHz, High Temperature Oscillator (-40 to +125°C) |
Datasheet
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SiT8919BA-33-18S-125.000000
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SiTime
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115 to 137 MHz, High Temperature Oscillator (-40 to +125°C) |
Datasheet
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