crystal quartz 24mhz
Abstract: Tele Quarz Group Crystal Oscillator 32,768 SMD Quarz Datasheet Tele Quartz Group Crystal Oscillator analog Quartz Clock c166 development SAx-C167-LM C161CI microcontroller based inverter AP2420
Text: Microcontrollers ApNote AP242003 Crystal Oscillator of the C500 and C166 Microcontroller Families The microcontrollers of the C500/C166 Family include the active part of the oscillator. This document explains the quartz crystal oscillator functionality and gives recommendations
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AP242003
C500/C166
D-90443
3545-H
AP242003
crystal quartz 24mhz
Tele Quarz Group Crystal Oscillator
32,768 SMD Quarz Datasheet
Tele Quartz Group Crystal Oscillator
analog Quartz Clock
c166 development
SAx-C167-LM
C161CI
microcontroller based inverter
AP2420
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ba capacitance diode
Abstract: BA diode BA 30 C 052 marking on semiconductor ba pin diode
Text: BA 597 BA 597 Silicon PIN Diode Preliminary Data ● ● RF switch, RF attenuator for frequencies above 10 MHz Very low IM distortion Type Ordering Code taped Pin Configuration Marking 1 2 Package BA 597 UPON INQUIRY C SOD-323 A yellow/R Maximum Ratings
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OD-323
ba capacitance diode
BA diode
BA 30 C
052 marking on semiconductor
ba pin diode
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marking code js 3 pin diode
Abstract: ba sot23 BA diode JS-220 MA MARKING SOT23 marking code BA sot23 BA 30 C 052 marking on semiconductor sot marking code BA
Text: BA 887 Silicon PIN Diode Preliminary Data ● ● RF switch, RF attenuator for frequencies above 10 MHz Very low IM distortion Type Ordering Code taped Pin Configuration Marking 1 2 3 Package BA 887 Q62702- A SOT-23 C PDs Maximum Ratings Parameter Symbol
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Q62702-
OT-23
marking code js 3 pin diode
ba sot23
BA diode
JS-220
MA MARKING SOT23
marking code BA sot23
BA 30 C
052 marking on semiconductor
sot marking code BA
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MSM66301 NX8
Abstract: 09F0h OLMS66K OLMS-66K D16h MAC66K
Text: 1 FJXLNX-8-500S-01 OLMS 66K シリーズ nX-8/500S コア インストラクションマニュアル CMOS 16bit マイクロコントローラ 第 2 版 ’00.10 作成 ご注意 1. 本書に記載された内容は製品改善及び技術改良等により将来予告なしに変更することがあります。したがって、
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FJXLNX-8-500S-01
nX-8/500S
16bit
Copyright2000OKIELECTRICINDUSTRYCO.
MSM66301 NX8
09F0h
OLMS66K
OLMS-66K
D16h
MAC66K
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54pin
Abstract: ASCEND Semiconductor 100MHZ AD484M1644VTA AD484M1644VTA-10L AD484M1644VTA-15 AD484M1644VTA-6 AD484M1644VTA-7 AD484M1644VTA-7I AD484M1644VTA-7L AD484M1644VTA-8I
Text: Ascend Semiconductor Corporation 64Mb SDRAM ASCEND ASCEND Semiconductor Semiconductor 64M 64M SDRAM SDRAM Data Data sheet sheet Tel: 03 5635888 / Fax: (03)5635188/ http://www.ascendsemi.com.tw Preliminary 1 Ascend Semiconductor Corporation 64Mb SDRAM Ordering Information
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183MHz
54pin
ASCEND Semiconductor 100MHZ
AD484M1644VTA
AD484M1644VTA-10L
AD484M1644VTA-15
AD484M1644VTA-6
AD484M1644VTA-7
AD484M1644VTA-7I
AD484M1644VTA-7L
AD484M1644VTA-8I
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Tele Quarz Group Crystal Oscillator
Abstract: Tele Quartz Group Crystal Oscillator Tele Quarz Group Tele Quartz Group Crystal Filter Tele Quartz Group crystal 27 hc49 inductance D-90443 HC49 SMD Quarz Datasheet AP242002 QUARZ CRYSTAL 26 MHZ
Text: Microcontrollers ApNote AP242002 Crystal Oscillator of the C500 and C166 Microcontroller Families The microcontrollers of the C500/C166 Family include the active part of the oscillator. This document explains the quartz crystal oscillator functionality and gives recommendations
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AP242002
C500/C166
D-90443
3545-H
AP242002
Tele Quarz Group Crystal Oscillator
Tele Quartz Group Crystal Oscillator
Tele Quarz Group
Tele Quartz Group Crystal Filter
Tele Quartz Group
crystal 27 hc49 inductance
HC49 SMD Quarz Datasheet
QUARZ CRYSTAL 26 MHZ
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET SMCP0.1E 3Stacked MCP Multi-Chip Package FLASH & FLASH & FCRAM CMOS 64M (x16) FLASH MEMORY & 32M (×16) FLASH MEMORY & 32M (×16) Mobile FCRAM TM MB84VF5F4F4J2-70 • FEATURES • Power supply voltage of 2.7 to 3.1V • High performance
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MB84VF5F4F4J2-70
107-ball
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MB84VD2003
Abstract: MB84VD2002 E4000
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50110-1E MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 8M (x 8/× 16) FLASH MEMORY & 2M (× 8) STATIC RAM MB84VD2002-10/MB84VD2003-10 • FEATURES • Power supply voltage of 2.7 to 3.6 V • High performance 100 ns maximum access time
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DS05-50110-1E
MB84VD2002-10/MB84VD2003-10
MB84VD2002:
MB84VD2003:
MB84VD2003
MB84VD2002
E4000
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MB84VD2002
Abstract: MB84VD2003
Text: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-50110-1E MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 8M (x 8/× 16) FLASH MEMORY & 2M (× 8) STATIC RAM MB84VD2002-10/MB84VD2003-10 • FEATURES • Power supply voltage of 2.7 to 3.6 V • High performance
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DS05-50110-1E
MB84VD2002-10/MB84VD2003-10
MB84VD2002:
MB84VD2003:
MB84VD2002
MB84VD2003
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107-pin
Abstract: 4kw marking
Text: FUJITSU SEMICONDUCTOR DATA SHEET SMCP0.4E 3Stacked MCP Multi-Chip Package FLASH & FLASH & FCRAM CMOS 64M (x16) FLASH MEMORY & 32M (×16) FLASH MEMORY & 32M (×16) Mobile FCRAM TM MB84VF5F4F4J1-70 • FEATURES • Power supply voltage of 2.7 to 3.1V • High performance
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MB84VF5F4F4J1-70
107-ball
107-pin
4kw marking
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MB84VD2008
Abstract: MB84VD2009 10000H sa2111
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50111-1E MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 8M (x 16) FLASH MEMORY & 2M (× 16) STATIC RAM MB84VD2008-10/MB84VD2009-10 • FEATURES • Power supply voltage of 2.7 to 3.6 V • High performance 100 ns maximum access time
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DS05-50111-1E
MB84VD2008-10/MB84VD2009-10
MB84VD2008:
MB84VD2009:
MB84VD2008
MB84VD2009
10000H
sa2111
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MB84VD2008
Abstract: MB84VD2009 sa2111
Text: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-50111-1E MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 8M (x 16) FLASH MEMORY & 2M (× 16) STATIC RAM MB84VD2008-10/MB84VD2009-10 • FEATURES • Power supply voltage of 2.7 to 3.6 V • High performance
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DS05-50111-1E
MB84VD2008-10/MB84VD2009-10
MB84VD2008:
MB84VD2009:
MB84VD2008
MB84VD2009
sa2111
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4kw marking
Abstract: MB84VF5F4F4J1-70 MBM29DL64DF
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50403-1E 3 Stacked MCP Multi-Chip Package FLASH & FLASH & FCRAM CMOS 64M (x16) FLASH MEMORY & 32M (×16) FLASH MEMORY & 32M (×16) Mobile FCRAM TM MB84VF5F4F4J1-70 • FEATURES • Power supply voltage of 2.7 V to 3.1 V
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DS05-50403-1E
MB84VF5F4F4J1-70
107-ball
65for
F0302
4kw marking
MB84VF5F4F4J1-70
MBM29DL64DF
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AP2420
Abstract: Tele Quartz Group Crystal Oscillator Tele Quarz Group Tele Quarz Group Crystal Oscillator crystal oscillator safety factor crystal quarz KFZ0012 C166 KFZ0017AS C167CR403
Text: Microcontrollers ApNote AP2420 Crystal Oscillator of the C500 and C166 Microcontroller Families The microcontrollers of the C500/C166 Family include the active part of the oscillator. This document explains the quartz crystal oscillator functionality and gives recommendations
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AP2420
C500/C166
D-90443
3545-H
AP2420
Tele Quartz Group Crystal Oscillator
Tele Quarz Group
Tele Quarz Group Crystal Oscillator
crystal oscillator safety factor
crystal quarz
KFZ0012
C166
KFZ0017AS
C167CR403
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zo 107 NA P 611
Abstract: transistor jsx clc5665 cable tv amplifier CLC431 CLC432 CLC730013 OA-25 ideal transformer transmission lines Twisted Pair spice model
Text: S eptem ber 1998 National Semiconductor & f - ° 9 r " £ O 2 o> / o > CLC5665 Low Distortion Amplifier with Disable o General Description Features > The C LC 5665 is a low -cost, w ideband am plifier that provides very low 2nd and 3rd harm onic distortion at 1MHz (-89/-92dBc). The
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CLC5665
CLC5665
-89/-92dBc)
800V/ns,
90MHz
20MHz
CLC5665IN
zo 107 NA P 611
transistor jsx
cable tv amplifier
CLC431
CLC432
CLC730013
OA-25
ideal transformer
transmission lines Twisted Pair spice model
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BA 3RD SEM
Abstract: holtek drum melody duck common cathode 7-segment led display
Text: HOLTEK H r HT3690A Multi-Function Keyboard Instrument Features • • • • • • • • • • • • • • • • • • • • • • • • O perating voltage: 2.4V~5.1V On-chip crystal oscillator: 3.58M Hz 49-key in strum en t and com pass ran ge from
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49-key
HT3690A
T3690A
10Ki2
BA 3RD SEM
holtek drum
melody duck
common cathode 7-segment led display
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Untitled
Abstract: No abstract text available
Text: SIEMENS Silicon PIN Diode BA 597 Preliminary Data • RF switch, RF attenuator for frequencies above 10 MHz • Very low IM distortion Type BA 597 Ordering Code Pin Configuration taped 1 2 UPON INQUIRY C A Marking Package yellow/R SOD-323 Maximum Ratings
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OD-323
a235fc
DlHD17fl
Q15Q1Ã
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Untitled
Abstract: No abstract text available
Text: SIEMENS S ilico n PIN Diode BA 597 Preliminary Data • RF switch, RF attenuator for frequencies above 10 MHz • Very low IM distortion Type Ordering Code taped Pin Configuration 1 2 Marking Package BA 597 UPON INQUIRY C yellow/R SOD-323 A Maximum Ratings
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OD-323
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Untitled
Abstract: No abstract text available
Text: I T O S H IB A MICROW AVE POWER GaAa FET MICROWAVE SEMICONDUCTOR TECHNICAL DATA TIM7179-30L ' FEATURES : • LOW INTERMODULATION DISTORTION IM S - - 4 3 dBo at Po - 34.5 dBm, Slnglt Carrier level - HIG H POWER P ldB a4 4 . 5dBmat 7.1 GHz to 7.9 QH* > H IG H GAIM
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TIM7179-30L
2-16G1B)
TIB7179-30L
79-3QL-----------------------------------
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FC 40V7177B P R E U - nc,uic. ^ 3 7 .1 — 7 .7G H z BA N D lO W IN TE R N A LLY M ATCHED GaAs FET DESCRIPTION The M G F C 4 0 V 7 1 7 7 B is an in te rna lly im p e d a n ce -m a tch e d GaAs power F E T especially designed fo r use in 7 1 — 7 .7
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40V7177B
50JT2
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UAA3500HL
Abstract: No abstract text available
Text: INTEGRATED CIRCUITS UAA3500HL Pager receiver Objective specification File under Integrated Circuits, IC17 Philips Sem iconductors 1999 Mar 30 PHILIPS Philips Semiconductors Objective specification Pager receiver UAA3500HL The UAA3500HL contains a front-end receiver
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UAA3500HL
UAA3500HL
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C38V5964
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F C 38V 5964 5 .9 6.4GHz BAND 6W INTERNALLY MATCHED GaAs FET DESCRIPTION T h e M G F C 3 8 V 5 9 6 4 is a n in te rn a lly im p e d a n c e -m a tc h e d GaAs p o w e r F E T especially designed fo r use in 5 . 9 - 6 . 4
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IRC RN55D
Abstract: No abstract text available
Text: National Semiconductor t u CLC401 Fast Settling, Wideband High-Gain Monolithic Op Amp General Description Features The CLC401 is a wideband, fast-settling op amp designed for applications requiring gains greater than ± 7 . Constructed using an advanced complementary bipolar process and a proprietary design, the CLC401
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CLC401
150MHz
50MHz)
IRC RN55D
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Untitled
Abstract: No abstract text available
Text: T O S H IB A MICROWAVE POWER GaAs FET MICROW AVE SEM ICON DUCTOR T IM 5359-45S L TECHNICAL DATA FEATURES : • LOW INTERMODULATION DISTORTION tM3 « -4 8 dBc at Po - 35.5 dB* Singt« Carrier Laval ■ HIGH POWER P io b * 4 6 .5 dfta at 5.3 GH z to 5.9 <3Hz
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5359-45S
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