marking BA
Abstract: transistor mark BA ba 2nd year PG05BAUSM
Text: SEMICONDUCTOR PG05BAUSM MARKING SPECIFICATION USM PACKAGE 1. Marking method Laser Marking BA 1 No. 0 1 2. Marking 2 Item Marking Description Device Mark BA PG05BAUSM hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method
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PG05BAUSM
marking BA
transistor mark BA
ba 2nd year
PG05BAUSM
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ba 2nd years
Abstract: transistor mark BA KRX101E marking BA
Text: SEMICONDUCTOR KRX101E MARKING SPECIFICATION TESV PACKAGE 1. Marking method Laser Marking BA 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark BA KRX101E hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.
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KRX101E
ba 2nd years
transistor mark BA
KRX101E
marking BA
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ba 2nd years
Abstract: KRX101U b.a 1st year ba 2nd year ba 1st year
Text: SEMICONDUCTOR KRX101U MARKING SPECIFICATION USV PACKAGE 1. Marking method Laser Marking BA 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark BA KRX101U hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Dot ● Pin 1 Indexs
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KRX101U
ba 2nd years
KRX101U
b.a 1st year
ba 2nd year
ba 1st year
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ba 2nd years
Abstract: KRX201E marking BA
Text: SEMICONDUCTOR KRX201E MARKING SPECIFICATION TES6 PACKAGE 1. Marking method Laser Marking BA 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark BA KRX201E hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.
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KRX201E
ba 2nd years
KRX201E
marking BA
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transistor mark BA
Abstract: KRX201U ba 2nd years
Text: SEMICONDUCTOR KRX201U MARKING SPECIFICATION US6 PACKAGE 1. Marking method Laser Marking BA 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark BA KRX201U hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.
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KRX201U
transistor mark BA
KRX201U
ba 2nd years
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transistor mark BA
Abstract: KTC9011S ktc90
Text: SEMICONDUCTOR KTC9011S MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 1 BAF 2 1 Item Marking Description Device Mark BA KTC9011S hFE Grade F F, G, H, I * Lot No. 01 2002. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method
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KTC9011S
OT-23
transistor mark BA
KTC9011S
ktc90
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ba 2nd years
Abstract: ba 2nd year
Text: Using the Financial Functions of the TI-83 or TI-83 Plus www.ti.com/calc/83 and www.ti.com/calc/83plus This guide is to help you quickly get started using the Time-Value-of-Money features of the TI-83 and TI-83 Plus. Additional features are covered in Chapter 14 of the User Guide available at
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TI-83
com/calc/83
com/calc/83plus
ba 2nd years
ba 2nd year
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F222
Abstract: No abstract text available
Text: Preliminary OneNAND128 FLASH MEMORY OneNAND SPECIFICATION Product OneNAND128 Part No. VCC core & IO Temperature PKG KFG2816Q1M-DEB 1.8V(1.7V~1.95V) Extended 67FBGA(LF)/48TSOP1 KFG2816D1M-DEB 2.65V(2.4V~2.9V) Extended 67FBGA(LF)/48TSOP1 KFG2816U1M-DIB 3.3V(2.7V~3.6V)
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OneNAND128
KFG2816Q1M-DEB
OneNAND128
KFG2816D1M-DEB
KFG2816U1M-DIB
67FBGA
/48TSOP1
F222
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SLC NAND endurance 100k years
Abstract: 802AH
Text: Preliminary OneNAND128 FLASH MEMORY OneNAND SPECIFICATION Product OneNAND128 Part No. VCC core & IO Temperature PKG KFG2816Q1M-DEB 1.8V(1.7V~1.95V) Extended 67FBGA(LF)/48TSOP1 KFG2816D1M-DEB 2.65V(2.4V~2.9V) Extended 67FBGA(LF)/48TSOP1 KFG2816U1M-DIB 3.3V(2.7V~3.6V)
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OneNAND128
KFG2816Q1M-DEB
OneNAND128
KFG2816D1M-DEB
KFG2816U1M-DIB
67FBGA
/48TSOP1
SLC NAND endurance 100k years
802AH
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63FBGA
Abstract: KFG5616D1M-DEB KFG5616Q1M KFG5616Q1M-DEB KFG5616U1M-DIB 8017h
Text: OneNAND256 FLASH MEMORY OneNAND SPECIFICATION Product OneNAND256 Part No. VCC core & IO Temperature PKG KFG5616Q1M-DEB 1.8V(1.7V~1.95V) Extended 63FBGA(LF)/48TSOP1 KFG5616D1M-DEB 2.65V(2.4V~2.9V) Extended 63FBGA(LF)/48TSOP1 KFG5616U1M-DIB 3.3V(2.7V~3.6V)
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OneNAND256
KFG5616Q1M-DEB
63FBGA
/48TSOP1
KFG5616D1M-DEB
KFG5616U1M-DIB
KFG5616D1M-DEB
KFG5616Q1M
KFG5616Q1M-DEB
KFG5616U1M-DIB
8017h
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nokia 1100 LCD
Abstract: Nokia lcd 1100 circuit diagram of nokia 101
Text: Preliminary MuxOneNAND256 KFM5616Q1M FLASH MEMORY MuxOneNAND SPECIFICATION Product MuxOneNAND256 Part No. KFM5616Q1M VCC(core & IO) PKG 1.8V(1.7V~1.95V) 63FBGA(LF) Version: Ver. 1.1 Date: January 26th, 2005 1 Preliminary MuxOneNAND256(KFM5616Q1M) FLASH MEMORY
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MuxOneNAND256
KFM5616Q1M)
KFM5616Q1M
63FBGA
80x11
nokia 1100 LCD
Nokia lcd 1100
circuit diagram of nokia 101
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F221h
Abstract: No abstract text available
Text: MuxOneNAND256 KFM5616Q1A-DEB5 FLASH MEMORY MuxOneNANDTM Specification Density Part No. VCC(core & IO) Temperature PKG 256Mb KFM5616Q1A-DEB5 1.8V(1.7V~1.95V) Extended 67FBGA(LF) Version: Ver. 1.1 Date: Aug 11, 2005 1 MuxOneNAND256(KFM5616Q1A-DEB5) 1.0 FLASH MEMORY
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MuxOneNAND256
KFM5616Q1A-DEB5)
256Mb
KFM5616Q1A-DEB5
67FBGA
67-FBGA-7
F221h
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Toggle DDR NAND flash
Abstract: No abstract text available
Text: MuxOneNAND256 KFM5616Q1A-DEB6 FLASH MEMORY MuxOneNANDTM Specification Density Part No. VCC(core & IO) Temperature PKG 256Mb KFM5616Q1A-DEB6 1.8V(1.7V~1.95V) Extended 67FBGA(LF) Version: Ver. 1.0 Date: May 17th, 2005 1 MuxOneNAND256(KFM5616Q1A-DEB6) 1.0 FLASH MEMORY
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MuxOneNAND256
KFM5616Q1A-DEB6)
256Mb
KFM5616Q1A-DEB6
67FBGA
67-FBGA-7
Toggle DDR NAND flash
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OneNAND
Abstract: SLC NAND endurance 100k KFG5616Q1A-DEB6 KFG5616Q1A-PEB6 KFG5616U1A-DIB6 KFG5616U1A-PIB6 mlc nand flash lsb msb r0400h
Text: OneNAND256 KFG5616x1A-xxB6 FLASH MEMORY OneNANDTM Specification Density 256Mb Part No. VCC(core & IO) Temperature PKG KFG5616Q1A-DEB6 1.8V(1.7V~1.95V) Extended 67FBGA(LF) KFG5616Q1A-PEB6 1.8V(1.7V~1.95V) Extended 48TSOP1 KFG5616U1A-DIB6 3.3V(2.7V~3.6V) Industrial
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OneNAND256
KFG5616x1A-xxB6)
KFG5616Q1A-DEB6
256Mb
67FBGA
KFG5616Q1A-PEB6
48TSOP1
KFG5616U1A-DIB6
KFG5616U1A-PIB6
OneNAND
SLC NAND endurance 100k
KFG5616Q1A-DEB6
KFG5616Q1A-PEB6
KFG5616U1A-DIB6
KFG5616U1A-PIB6
mlc nand flash lsb msb
r0400h
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Toggle DDR NAND flash
Abstract: samsung toggle mode NAND
Text: MuxOneNAND256 KFM5616Q1A-DEB5 FLASH MEMORY MuxOneNANDTM Specification Density Part No. VCC(core & IO) Temperature PKG 256Mb KFM5616Q1A-DEB5 1.8V(1.7V~1.95V) Extended 67FBGA(LF) Version: Ver. 1.0 Date: May 17th, 2005 1 MuxOneNAND256(KFM5616Q1A-DEB5) 1.0 FLASH MEMORY
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MuxOneNAND256
KFM5616Q1A-DEB5)
256Mb
KFM5616Q1A-DEB5
67FBGA
67-FBGA-7
Toggle DDR NAND flash
samsung toggle mode NAND
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Untitled
Abstract: No abstract text available
Text: MuxOneNAND256 KFM5616Q1A-DEB6 FLASH MEMORY MuxOneNANDTM Specification Density Part No. VCC(core & IO) Temperature PKG 256Mb KFM5616Q1A-DEB6 1.8V(1.7V~1.95V) Extended 67FBGA(LF) Version: Ver. 1.1 Date: Aug 11, 2005 1 MuxOneNAND256(KFM5616Q1A-DEB6) 1.0 FLASH MEMORY
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MuxOneNAND256
KFM5616Q1A-DEB6)
256Mb
KFM5616Q1A-DEB6
67FBGA
67-FBGA-7
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F24d
Abstract: 63FBGA SAMSUNG 256Mb NAND Flash Qualification Reliability MUXOneNAND
Text: MuxOneNAND256 KFM5616Q1M FLASH MEMORY MuxOneNAND SPECIFICATION Product Part No. VCC(core & IO) PKG MuxOneNAND256 KFM5616Q1M 1.8V(1.7V~1.95V) 63FBGA(LF) Version: Ver. 1.1 Date: June 15th, 2005 1 MuxOneNAND256(KFM5616Q1M) FLASH MEMORY INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,
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MuxOneNAND256
KFM5616Q1M)
MuxOneNAND256
KFM5616Q1M
63FBGA
80x11
F24d
SAMSUNG 256Mb NAND Flash Qualification Reliability
MUXOneNAND
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Samsung 2Gb 3V MLC Nand flash
Abstract: KFM5616Q1A-DEB5
Text: MuxOneNAND256 KFM5616Q1A-DEB5 FLASH MEMORY MuxOneNANDTM Specification Density Part No. VCC(core & IO) Temperature PKG 256Mb KFM5616Q1A-DEB5 1.8V(1.7V~1.95V) Extended 67FBGA(LF) Version: Ver. 1.2 Date: Dec. 23, 2005 1 MuxOneNAND256(KFM5616Q1A-DEB5) 1.0 FLASH MEMORY
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MuxOneNAND256
KFM5616Q1A-DEB5)
256Mb
KFM5616Q1A-DEB5
67FBGA
67-FBGA-7
Samsung 2Gb 3V MLC Nand flash
KFM5616Q1A-DEB5
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tsop1748
Abstract: onenand block map onenand Flash Memory SAMSUNG OneNAND
Text: OneNAND128 FLASH MEMORY OneNAND SPECIFICATION Product OneNAND128 Part No. VCC core & IO Temperature PKG KFG2816Q1M-DEB 1.8V(1.7V~1.95V) Extended 67FBGA(LF)/48TSOP1 KFG2816D1M-DEB 2.65V(2.4V~2.9V) Extended 67FBGA(LF)/48TSOP1 KFG2816U1M-DIB 3.3V(2.7V~3.6V)
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OneNAND128
KFG2816Q1M-DEB
67FBGA
/48TSOP1
KFG2816D1M-DEB
KFG2816U1M-DIB
tsop1748
onenand block map
onenand
Flash Memory SAMSUNG OneNAND
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512MB NOR FLASH
Abstract: "bad block" smartmedia ecc oneNand samsung 2GB Nand flash Samsung Electronics. NAND flash memory code lock circuit flow chart KFG1216 mlc nand flash lsb msb NAND flash memory SAMSUNG NAND FLASH
Text: OneNAND512 KFG1216x2A-xxB5 FLASH MEMORY OneNANDTM Specification Density 512Mb Part No. VCC(core & IO) Temperature PKG KFG1216Q2A-DEB5 1.8V(1.7V~1.95V) Extended 63FBGA(LF) KFG1216Q2A-FEB5 1.8V(1.7V~1.95V) Extended 63FBGA KFG1216U2A-DIB5 3.3V(2.7V~3.6V) Industrial
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OneNAND512
KFG1216x2A-xxB5)
KFG1216Q2A-DEB5
512Mb
63FBGA
KFG1216Q2A-FEB5
63FBGA
KFG1216U2A-DIB5
KFG1216U2A-FIB5
512MB NOR FLASH
"bad block" smartmedia ecc
oneNand
samsung 2GB Nand flash
Samsung Electronics. NAND flash memory
code lock circuit flow chart
KFG1216
mlc nand flash lsb msb
NAND flash memory
SAMSUNG NAND FLASH
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samsung toggle mode NAND
Abstract: Samsung MLC cq 724 g diode Samsung nand MLC mlc nand flash lsb msb Samsung Electronics. NAND flash memory toggle mode nand samsung "NAND Flash" samsung dual lcd samsung lcd monitor power supply circuit diagram
Text: OneNAND128 FLASH MEMORY OneNAND SPECIFICATION Product OneNAND128 Part No. VCC core & IO Temperature PKG KFG2816Q1M-DEB 1.8V(1.7V~1.95V) Extended 67FBGA(LF)/48TSOP1 KFG2816U1M-DIB 3.3V(2.7V~3.6V) Industrial 67FBGA(LF)/48TSOP1 Version: Ver. 1.1 Date: Dec. 23, 2005
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OneNAND128
KFG2816Q1M-DEB
67FBGA
/48TSOP1
KFG2816U1M-DIB
047MAX
samsung toggle mode NAND
Samsung MLC
cq 724 g diode
Samsung nand MLC
mlc nand flash lsb msb
Samsung Electronics. NAND flash memory
toggle mode nand samsung
"NAND Flash"
samsung dual lcd
samsung lcd monitor power supply circuit diagram
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SAMSUNG 256Mb NAND Flash Qualification Report
Abstract: No abstract text available
Text: MuxOneNAND256 KFM5616Q1M FLASH MEMORY MuxOneNAND SPECIFICATION Product MuxOneNAND256 Part No. KFM5616Q1M VCC(core & IO) PKG 1.8V(1.7V~1.95V) 63FBGA(LF) Version: Ver. 1.1 Date: June 15th, 2005 1 MuxOneNAND256(KFM5616Q1M) FLASH MEMORY INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,
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MuxOneNAND256
KFM5616Q1M)
KFM5616Q1M
63FBGA
80x11
SAMSUNG 256Mb NAND Flash Qualification Report
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KFG1216U2A-DIB6
Abstract: mlc nand flash lsb msb samsung KFG1216U2A-DIB6 oneNand 63FBGA KFG1216Q2A-DEB6 KFG1216Q2A-FEB6 KFG1216U2A-FIB6
Text: OneNAND512 KFG1216x2A-xxB6 FLASH MEMORY OneNANDTM Specification Density 512Mb Part No. VCC(core & IO) Temperature PKG KFG1216Q2A-DEB6 1.8V(1.7V~1.95V) Extended 63FBGA(LF) KFG1216Q2A-FEB6 1.8V(1.7V~1.95V) Extended 63FBGA KFG1216U2A-DIB6 3.3V(2.7V~3.6V) Industrial
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OneNAND512
KFG1216x2A-xxB6)
KFG1216Q2A-DEB6
512Mb
63FBGA
KFG1216Q2A-FEB6
63FBGA
KFG1216U2A-DIB6
KFG1216U2A-FIB6
KFG1216U2A-DIB6
mlc nand flash lsb msb
samsung KFG1216U2A-DIB6
oneNand
KFG1216Q2A-DEB6
KFG1216Q2A-FEB6
KFG1216U2A-FIB6
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KFM5616Q1A-DEB6
Abstract: No abstract text available
Text: MuxOneNAND256 KFM5616Q1A-DEB6 FLASH MEMORY MuxOneNANDTM Specification Density Part No. VCC(core & IO) Temperature PKG 256Mb KFM5616Q1A-DEB6 1.8V(1.7V~1.95V) Extended 67FBGA(LF) Version: Ver. 1.2 Date: Dec. 23, 2005 1 MuxOneNAND256(KFM5616Q1A-DEB6) 1.0 FLASH MEMORY
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MuxOneNAND256
KFM5616Q1A-DEB6)
256Mb
KFM5616Q1A-DEB6
67FBGA
67-FBGA-7
KFM5616Q1A-DEB6
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