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    BA 151 0027 Search Results

    BA 151 0027 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    A0027-ALB Coilcraft Inc SMPS Transformer, 10W, ROHS COMPLIANT Visit Coilcraft Inc Buy
    A0027-ALD Coilcraft Inc SMPS Transformer, 10W, ROHS COMPLIANT Visit Coilcraft Inc Buy
    A0027- Coilcraft Inc Transformer, planar, SMT, RoHS Visit Coilcraft Inc
    A0027-AL Coilcraft Inc Transformer, planar, SMT, RoHS Visit Coilcraft Inc
    R7S910027CBG#AC0 Renesas Electronics Corporation Microprocessors for Real-Time Control and Networking of Industrial Equipment by only one chip Visit Renesas Electronics Corporation

    BA 151 0027 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MOV 270/20

    Abstract: 2322 640 90007 NTC thermistor philips phct 203 VARISTOR 275 K20 cma 00124 BC 2222 037 71109 ic 40154 2322 661 91002 UAA 1006 34821
    Text: Information Product guide 200 BCcomp Information World wide web New products and highlights Series index Ceramic capacitors Film capacitors Electrolytic capacitors Variable capacitors Linear resistors Non-linear resistors Switches and potentiometers 02/2003


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    K50 0406 capacitor

    Abstract: TIM32 276 022F TIM31 TIM46 266 051F GMS37112 TIM23 TIM03 K3926
    Text: $1437 Example source using GMS37112 2 NEC format uDP6121G INTRODUCTION The GMS37112 are an advanced CMOS 4-bit microcontroller with 1K bytes of ROM which provides a highly flexible and cost effective solution to many remote control transmitter such as TV, VCR, CATV, DVD etc. It offers 32


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    PDF GMS37112 uDP6121G) TIM46 TIM45 TIM44 TIM43 TIM42 TIM41 TIM40 TIM39 K50 0406 capacitor TIM32 276 022F TIM31 TIM46 266 051F GMS37112 TIM23 TIM03 K3926

    Untitled

    Abstract: No abstract text available
    Text: May 3, 2007 W65C265S 16–bit Microcontroller WDC reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. Information contained herein is provided gratuitously and without liability, to any user.


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    PDF W65C265S

    W65C265S

    Abstract: w65c265s chip W65C802 1203 6d 555 timer A23 851 diode DF27 W65C265DB W65C816S 65C02
    Text: Sept 13, 2010 W65C265S 16–bit Microcontroller WDC reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. Information contained herein is provided gratuitously and without liability, to any user.


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    PDF W65C265S W65C265S w65c265s chip W65C802 1203 6d 555 timer A23 851 diode DF27 W65C265DB W65C816S 65C02

    W65C802

    Abstract: bcrx W65C265S CMOS 65C02 555 Timer Circuits 500 pages PCS71 apple iigs
    Text: July 11, 2007 W65C265S 16–bit Microcontroller WDC reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. Information contained herein is provided gratuitously and without liability, to any user.


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    PDF W65C265S W65C802 bcrx CMOS 65C02 555 Timer Circuits 500 pages PCS71 apple iigs

    Untitled

    Abstract: No abstract text available
    Text: Aug 3, 2009 W65C265S 16–bit Microcontroller WDC reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. Information contained herein is provided gratuitously and without liability, to any user.


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    PDF W65C265S

    29DL32BF

    Abstract: MBM29DL32
    Text: FUJITSU SEMICONDUCTOR DATA SHEET AE1.0E FLASH MEMORY CMOS 32 M 4 M x 8/2 M × 16 BIT Dual Operation MBM29DL32TF/BF 70 • DESCRIPTION The MBM29DL32TF/BF are a 32 M-bit, 3.0 V-only Flash memory organized as 4 M bytes of 8 bits each or 2 M words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V


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    PDF MBM29DL32TF/BF MBM29DL32TF/BF 29DL32BF MBM29DL32

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20896-3E FLASH MEMORY CMOS 32 M 4 M x 8/2 M × 16 BIT Dual Operation MBM29DL320TF/BF 70/80/10 • DESCRIPTION The MBM29DL320TF/BF are a 32 M-bit, 3.0 V-only Flash memory organized as 4 M bytes of 8 bits each or 2 M


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    PDF DS05-20896-3E MBM29DL320TF/BF

    SA611

    Abstract: 29DL320
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20896-2E FLASH MEMORY CMOS 32 M 4 M x 8/2 M × 16 BIT Dual Operation MBM29DL320TF/BF 70/80/10 • DESCRIPTION The MBM29DL320TF/BF are a 32 M-bit, 3.0 V-only Flash memory organized as 4 M bytes of 8 bits each or 2 M


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    PDF DS05-20896-2E MBM29DL320TF/BF MBM29DL320TF/BF SA611 29DL320

    FPT-48P-M19

    Abstract: No abstract text available
    Text: MBM29DL32TF/BF-70 Data Sheet Retired Product MBM29DL32TF/BF -70 Cover Sheet This product has been retired and is not recommended for new designs. Availability of this document is retained for reference and historical purposes only. Continuity of Specifications


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    PDF MBM29DL32TF/BF-70 MBM29DL32TF/BF DS05-20904-4E F0311 ProductDS05-20904-4E FPT-48P-M19

    PCS71

    Abstract: ACSR10 mos 6502 555 Timer Circuits 500 pages W65C816S W65C802 555 timer 38 khz square wave generator 1203 6d 555 timer 567 tone
    Text: WESTERN DESIGN CENTER W65C265 W65C265S DATA SHEET March 1, 2000 Confidential and Proprietary Information WESTERN DESIGN CENTER W65C265 WDC reserves the right to make changes at any time without notice in order to improve design and supply the best possible


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    PDF W65C265 W65C265S compC265S PCS71 ACSR10 mos 6502 555 Timer Circuits 500 pages W65C816S W65C802 555 timer 38 khz square wave generator 1203 6d 555 timer 567 tone

    65C02

    Abstract: W65C02S W65C265DB W65C816S
    Text: WESTERN DESIGN CENTER W65C265 W65C265S DATA SHEET March 1, 2000 Confidential and Proprietary Information WESTERN DESIGN CENTER W65C265 WDC reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. Information contained herein is provided


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    PDF W65C265 W65C265S compC265S 65C02 W65C02S W65C265DB W65C816S

    6502 CPU

    Abstract: 555 timer 38 khz square wave generator A23 851 diode 555 timer 38 khz DF27 W65C265S 555 timer datasheet delay timer circuit diagram 555 555 cmos timer datasheet 555 timer
    Text: WESTERN DESIGN CENTER W65C265S DATA SHEET March 1, 2000 W65C265S WESTERN DESIGN CENTER WDC reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. Information contained herein is provided gratuitously


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    PDF W65C265S W65C265S coC265S 6502 CPU 555 timer 38 khz square wave generator A23 851 diode 555 timer 38 khz DF27 555 timer datasheet delay timer circuit diagram 555 555 cmos timer datasheet 555 timer

    BT 151 PIN DIAGRAM

    Abstract: MK31VT872A MK31VT872A-8YC
    Text: M K31VT872A-8YC 98.06.26 O K I iSem ¡conductor M K 3 1 V T 8 7 2 A -8YC 8,388,608 Word x 72 Bit SYNCHRONOUS DYNAMIC RAM MODULE (1 BANK): DESCRIPTION The Oki MK31VT872A-8YC is a fully decoded, 8,388,608 x 72bit synchronous dynamic random access memory composed of eight 64Mb DRAMs(8Mx9) in TSOP packages


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    PDF MK31VT872A-8YC K31VT872A-8YC_ MK31VT872A-8YC 72bit 168-pin 72-Bit b724E40 D0E711E BT 151 PIN DIAGRAM MK31VT872A

    BT 151 PIN DIAGRAM

    Abstract: MK31VT864A MK31VT864A-8YC
    Text: M K31VT864A-8YC 98.06.26 O K I Semiconductor M K 3 1 V T 8 6 4 A -8 Y C 8,388,608 Word x 64 Bit SYNCHRONOUS DYNAMIC RAM MODULE (1BANK);_ DESCRIPTION The Oki MK31VT864A-8YC is a fully decoded, 8,388,608 x 64bit synchronous dynamic


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    PDF MK31VT864A-8YC MK31VT864A-8YC_ MK31VT864A-8YC 64bit 168-pin 64-Bit Lj7EM240 00271D1 BT 151 PIN DIAGRAM MK31VT864A

    ASEA trpa

    Abstract: TRPB tube 1S4
    Text: r*"* Catalogue RiC. 15-1 E ASEA Edition 1 February 1973 f ile R, Parí 2 Resistance thermometers Type TRA A , TR PA , T R P B , T R P C , T R P F, T R P G and TR PH Tita J5& Of measuiirtg equipment having resislsrrc-a therrriometens is common in rnaity applications where temperature gives


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    Untitled

    Abstract: No abstract text available
    Text: i DS05-11030-1E FUJITSU SEMICONDUCTOR DATA SHEET \ MEMORY CMOS 4 x 2 M x 8 BIT SYNCHRONOUS DYNAMIC RAM CMOS 4-Bank x 2,097,152-Word x 8 Bit Synchronous Dynamic Random Access Memory n DESCRIPTION The Fujitsu MB81164842A is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing


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    PDF DS05-11030-1E 2A-125/-100/-84/-67/-125L/-100L/-84L/-67L 152-Word MB81164842A 374175b 54-pin FPT-54P-M02)

    27L2L

    Abstract: 3CK10
    Text: HM5216165 Series 524,288-word x 16-bit x 2-bank Synchronous Dynamic RAM HITACHI ADE-203-280 A (Z) Preliminary Rev. 0.1 Oct. 20, 1995 Description All inputs and outputs are referred to the rising edge of the clock input. The HM5216165 is offered in 2 banks for improved performance.


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    PDF HM5216165 288-word 16-bit ADE-203-280 Hz/83 Hz/66 27bb2 HM5216165TT 27L2L 3CK10

    Untitled

    Abstract: No abstract text available
    Text: WDC THE WESTERN DESIGN CENTER, INC. W65C265S IN TRO D U CTIO N The WDC W65C265S microcomputer is a complete fully static 16-bit computer fabricated on a single chip using a Hi-Rel low power CMOS process. The W65C265S complements an established and growing line


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    PDF W65C265S W65C265S 16-bit W65C816S W65C265SPCB

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI M EM OR Y CARD F LA S H M E M O R Y CAR DS M F 8 4 M 1 -G 4 E A T X X 8/76-bit Data Bus Flash M e m o ry C ard Connector Type Two-piece 68-pin 7 D E S C R IP TIO N The M F 84M 1 - G4E A T X X is a flash m em o ry card • T T L interface level ■ P ro g ra m /e ra se operation by softw are com m and


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    PDF 8/76-bit 68-pin

    Untitled

    Abstract: No abstract text available
    Text: jdt Integrated Device Technology, Inc. 3.3V C M O S STATIC RAM 1 MEG 128K x 8) CENTER POWER & GROUND PINOUT PRELIMINARY IDT71V124SA FEATURES: DESCRIPTION: • 128K x 8 advanced high-speed C M O S static RAM • JED EC revolutionary pinout (center power/GND) for


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    PDF IDT71V124SA 10/12/15/20ns 32-pin 400-mil 32pin IDT71V124 576-bit

    Untitled

    Abstract: No abstract text available
    Text: HYM7V631601BTFG 16Mx64, 8Mx8 based, PC133 DESCRIPTION The Hynix HYM7V631601B F-Series are 16Mx64bits Synchronous DRAM Modules. The modules are composed of sixteen 8Mx8bit CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pln TSSOP


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    PDF HYM7V631601BTFG 16Mx64, PC133 HYM7V631601B 16Mx64bits 400mil 54pin 168pm 128Mbytes

    DD27D

    Abstract: land pattern for TSOP 2 50 MB257 TM 1828
    Text: 3.3V CMOS STATIC RAM 32Kx 16-BIT PRELIMINARY IDT71V008 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 32K x 16 advanced high-speed CMOS Static RAM • Equal access and cycle times — 10/12/15/20ns • One Chip Select plus one Output Enable pin


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    PDF 16-BIT IDT71V008 10/12/15/20ns 44-pin IDT71V008 288-bit 910-338-207Q DD27D land pattern for TSOP 2 50 MB257 TM 1828

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A TH MY7216E1 BEG-80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY7216E1BEG is a 16,777,216-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59S6408BFT DRAMs and an unbuffer on a printed circuit board.


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    PDF MY7216E1 BEG-80 216-WORD 72-BIT THMY7216E1BEG TC59S6408BFT 72-bit